摘要:
A ferromagnetic semiconductor structure is provided. The structure includes a monocrystalline semiconductor substrate and a doped titanium oxide anatase layer overlying the semiconductor substrate.
摘要:
High quality monocrystalline metal oxide layers are grown on a monocrystalline substrate such as a silicon wafer. The monocrystalline metal oxide is grown on the silicon substrate at a temperature low enough to prevent deleterious and simultaneous oxidation of the silicon substrate. After a layer of 1-3 monolayers of the monocrystalline oxide is grown, the growth is stopped and the crystal quality of that layer is improved by a higher temperature anneal. Following the anneal, the thickness of the layer can be increased by restarting the low temperature growth. An amorphous silicon oxide layer can be grown at the interface between the monocrystalline metal oxide layer and the silicon substrate after the thickness of the monocrystalline oxide reaches a few monolayers.
摘要:
An exemplary system and method for providing a microwave regime, frequency-agile device is disclosed as comprising inter alia: a low-loss, insulating substrate (200); a layer of SiO2 (210) over the surface of said substrate; and a layer of BST (220) deposited over the SiO2 layer (210). Disclosed features and specifications may be variously controlled, configured, adapted or otherwise optionally modified to further improve or otherwise optimize frequency response or other material characteristics. Exemplary embodiments of the present invention representatively provide for integrated high-efficiency, low-loss microwave components that may be readily incorporated with existing technologies for the improvement of frequency response, device package form factors, weights and/or other manufacturing, device or material performance metrics.
摘要:
Semiconductor structures, and methods for fabricating semiconductor structures, comprising high dielectric constant stacked structures are provided. A stacked dielectric structure (16) in accordance with one exemplary embodiment of the present invention has a first amorphous dielectric layer (18) comprising HfXZr1-XO2, where 0≦X≦1. An amorphous interlayer (20) overlies the first amorphous dielectric layer. The interlayer has a net dielectric constant that is approximately no less than the dielectric constant of HfZrO4. A second amorphous dielectric layer (22) overlies the interlayer. The second amorphous dielectric layer comprises HfYZr1-YO2, where 0≦Y≦1. The stacked dielectric structure (16) has a net dielectric constant that is approximately no less than the dielectric constant of HfZrO4.
摘要翻译:提供了包括高介电常数堆叠结构的半导体结构和用于制造半导体结构的方法。 根据本发明的一个示例性实施例的叠层电介质结构(16)具有第一非晶介质层(18),其包括Hf x N 1-X O O > 2 SUB>,其中0 <= X <= 1。 无定形中间层(20)覆盖在第一非晶介电层上。 中间层的净介电常数近似不小于HfZrO 4的介电常数。 第二非晶介质层(22)覆盖在中间层上。 第二非晶介质层包括Hf Y 1 Y Y 2 O 2,其中0 <= Y <= 1。 叠层电介质结构(16)具有大致不小于HfZrO 4介电常数的净介电常数。
摘要:
Semiconductor structures, and methods for fabricating semiconductor structures, comprising high dielectric constant stacked structures are provided. A stacked dielectric structure (16) in accordance with one exemplary embodiment of the present invention has a first amorphous dielectric layer (18) comprising HfXZr1-XO2, where 0≦X≦1. An amorphous interlayer (20) overlies the first amorphous dielectric layer. The interlayer has a net dielectric constant that is approximately no less than the dielectric constant of HfZrO4. A second amorphous dielectric layer (22) overlies the interlayer. The second amorphous dielectric layer comprises HfYZr1-YO2, where 0≦Y≦1. The stacked dielectric structure (16) has a net dielectric constant that is approximately no less than the dielectric constant of HfZrO4.
摘要翻译:提供了包括高介电常数堆叠结构的半导体结构和用于制造半导体结构的方法。 根据本发明的一个示例性实施例的叠层电介质结构(16)具有第一非晶介质层(18),其包括Hf x N 1-X O O > 2 SUB>,其中0 <= X <= 1。 无定形中间层(20)覆盖在第一非晶介电层上。 中间层的净介电常数近似不小于HfZrO 4的介电常数。 第二非晶介质层(22)覆盖在中间层上。 第二非晶介质层包括Hf Y 1 Y Y 2 O 2,其中0 <= Y <= 1。 叠层电介质结构(16)具有大致不小于HfZrO 4介电常数的净介电常数。
摘要:
A voltage controlled oscillator (VCO) comprising a first supply node, a second supply node, an oscillation transistor, a biasing network, an output node and a feedback network is described. The VCO is be powered by a supply voltage applied across the first and second supply nodes. The oscillation transistor and the biasing network are connected in series between the first supply node and the second supply node. The output node is connected to the oscillation transistor so as to deliver an oscillatory output signal. The feedback network provides an oscillatory feedback signal from the output node to the biasing network. The feedback network comprises a capacitive element and a transmission line connected in series for transferring the feedback signal. The VCO may be integrated in a radar device, for example.
摘要:
Systems and methods are provided for authenticating an input on a touch screen. A method comprises obtaining one or more pressure metrics for an input by a user on a touch screen that is being proffered as that of a known user. Each pressure metric corresponds to a pressure applied to the touch screen by the user at a respective impression location of the input. The method further comprises authenticating the user as the known user based at least in part on the one or more pressure metrics.
摘要:
A touch-screen display apparatus, the apparatus may include first and second sheets having opposed major surfaces and a size and shape defined by a periphery. The periphery may be defined by opposed ends and opposed edges. The first and second sheets may each have a conductive pattern including a pair of opposed busbars and a plurality of traces electrically coupled to, and extending between, corresponding pairs of opposed busbars. The transparent force sensing (TFS) sheet may have opposed major surfaces and a variable resistance which is related to a force exerted upon one or more of its major surfaces. The TFS sheet may be situated between the first and second sheets. The apparatus may also include one or more separation portions situated between the TFS sheet and the first or second sheet to bias the TFS sheet apart from the first or second sheet.
摘要:
A light-emitting device, comprising: a cover (1), a heat sink (2) and a light-emitting assembly (3), wherein the heat sink (2) has at least one first locking part (a), the cover (1) has at least one second locking part (b) corresponding to the first locking part (a), the second locking part (b) engages with the first locking part (a) to form an enclosed cavity (5) for the light-emitting assembly (3), and the second locking part (b) has a pressing part (b1) pressing the light-emitting assembly (3) against the heat sink (2).
摘要:
The disclosure relates to a displacement sensing touch panel and a touch screen using the touch panel. The touch panel includes a first panel, a second panel, and a displacement sensor sandwiched between the first panel and the second panel. The displacement sensor deforms when a pressure is applied to the first panel. The touch screen includes the touch panel, a controller where the touch positions and forces applied are deduced from the readings of the displacement sensor, and a display coupled to the controller and adjacent to the touch panel. Displacement information is collected through the displacement sensor to deduce the positions and magnitudes of the forces applied to the first panel of the touch panel or touch screen.