SUBSTRATE MANUFACTURING METHOD, EMBEDDED SUBSTRATE AND SEMICONDUCTOR

    公开(公告)号:US20240153819A1

    公开(公告)日:2024-05-09

    申请号:US18454022

    申请日:2023-08-22

    CPC classification number: H01L21/76885 H01L21/4828 H01L23/13 H01L23/14

    Abstract: A substrate manufacturing method, an embedded substrate and a semiconductor are disclosed. The method includes: manufacturing a first semi-finished substrate including first circuit layers and a first dielectric layer arranged in staggered and laminated manner; arranging a viscous material layer on the first circuit layer to form a device adhering area; adhering an embedded device on the device adhering area, a pin face of the embedded device facing away from the viscous material layer; laminating a second dielectric layer on the first circuit layer, which covers the viscous material layer and the embedded device; manufacturing a first conductive pillar, a second conductive pillar and a second circuit layer, the first conductive pillar extending through the second dielectric layer and configured for connecting the second circuit layer with the first circuit layer, the second conductive pillar being configured for connecting the embedded device with the second circuit layer.

    PACKAGE SUBSTRATE BASED ON MOLDING PROCESS AND MANUFACTURING METHOD THEREOF

    公开(公告)号:US20230092164A1

    公开(公告)日:2023-03-23

    申请号:US17945200

    申请日:2022-09-15

    Abstract: A package substrate based on a molding process may include an encapsulation layer, a support frame located in the encapsulation layer, a base, a device located on an upper surface of the base, a copper boss located on a lower surface of the base, a conductive copper pillar layer penetrating the encapsulation layer in the height direction, and a first circuit layer and a second circuit layer over and under the encapsulation layer. The second circuit layer includes a second conductive circuit and a heat dissipation circuit, the first circuit layer and the second conductive circuit are connected conductively through the conductive copper pillar layer, the heat dissipation circuit is connected to one side of the device through the copper boss and the base, and the first circuit layer is connected to the other side of the device.

    METHOD FOR MANUFACTURING EMBEDDED PACKAGE STRUCTURE HAVING AIR RESONANT CAVITY

    公开(公告)号:US20210399400A1

    公开(公告)日:2021-12-23

    申请号:US17220151

    申请日:2021-04-01

    Abstract: A method for manufacturing an embedded package structure having an air resonant cavity according to an embodiment includes manufacturing a first substrate including a first insulating layer, a chip embedded in the insulating layer, and a wiring layer on a terminal face of the chip of the first substrate, wherein the wiring layer is provided thereon with an opening revealing the terminal face of the chip; manufacturing a second substrate which comprises a second insulating layer; locally applying a first adhesive layer on the wiring layer such that the opening revealing the terminal face of the chip is not covered; and applying a second adhesive layer on the second substrate; and attaching and curing the first adhesive layer of the first substrate and the second adhesive layer of the second substrate to obtain an embedded package structure having an air resonant cavity on the terminal face of the chip.

    PACKAGED CAVITY STRUCTURE AND MANUFACTURING METHOD THEREOF

    公开(公告)号:US20240116752A1

    公开(公告)日:2024-04-11

    申请号:US18377419

    申请日:2023-10-06

    Abstract: A packaged cavity structure includes an embedded packaging frame having a first cavity and a first conductive post respectively penetrating an insulation layer in a height direction, a chipset within the first cavity, a first circuit layer on an upper surface of the embedded packaging frame, a first dielectric layer on the first circuit layer, a second circuit layer on the first dielectric layer, a through-hole penetrating the first dielectric layer and the insulation layer, a third circuit layer on a lower surface of the embedded packaging frame, a support post enclosure on the third circuit layer, and a packaging layer formed along the outside of the support post enclosure. A second cavity communicating with the through-hole is formed between the packaging layer and the lower surface of the embedded packaging frame, and the chipset includes a first chip and a second chip provided in a back-to-back stack.

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