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    METHOD AND STRUCTURE OF MEMS WLCSP FABRICATION
    1.
    发明申请
    METHOD AND STRUCTURE OF MEMS WLCSP FABRICATION 有权
    MEMS WLCSP制造的方法与结构

    公开(公告)号：US20150166330A1

    公开(公告)日：2015-06-18

    申请号：US14507177

    申请日：2014-10-06

    Applicant: mCube Inc.

    Inventor： Chien Chen Lee

    IPC: B81B7/00 ,  B81C1/00

    CPC classification number: B81C1/00301 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81C2203/0109 ,  B81C2203/0154

    Abstract: A method for fabricating a MEMS-IC device structure can include receiving a CMOS substrate comprising a plurality of CMOS circuits and a surface portion. A MEMS substrate having at least one MEMS device can be received and coupled to the CMOS substrate. The MEMS substrate and the surface portion of the CMOS substrate can be encapsulated with a molding material, which forms a top surface. A first plurality of vias can be created in the molding material from the top surface to the surface portion of the CMOS substrate. A conductive material can be disposed within the first plurality of vias such that the conductive material is electrically coupled to a portion of the CMOS substrate. A plurality of interconnects can be formed from the conductive material to the top surface of the molding material and a plurality of solder balls can be formed upon these interconnects.

    Abstract translation: 制造MEMS-IC器件结构的方法可以包括接收包括多个CMOS电路和表面部分的CMOS衬底。 具有至少一个MEMS器件的MEMS衬底可被接收并耦合到CMOS衬底。 MEMS衬底和CMOS衬底的表面部分可以用形成顶表面的成型材料封装。 可以在模制材料中从CMOS衬底的顶表面到表面部分形成第一多个通孔。 导电材料可以设置在第一多个通孔内，使得导电材料电耦合到CMOS衬底的一部分。 可以从导电材料形成多个互连件到模制材料的顶表面，并且可以在这些互连件上形成多个焊球。

    Multi-layer single chip MEMS WLCSP fabrication
    3.
    发明授权
    Multi-layer single chip MEMS WLCSP fabrication 有权

    公开(公告)号：US10106399B1

    公开(公告)日：2018-10-23

    申请号：US15787532

    申请日：2017-10-18

    Applicant: mCube, Inc.

    Inventor： Chien Chen Lee ,  Tzu Feng Chang

    IPC: B81C1/00

    Abstract: A method for fabricating a WLCSP device includes receiving a MEMS cap wafer having a first radius, a MEMS device wafer having a second radius, and a CMOS substrate wafer having a third radius, wherein the first radius is smaller than the second radius, and wherein the second radius is smaller than the third radius, disposing the MEMS cap wafer approximately concentrically upon the MEMS device wafer, disposing the MEMS device wafer approximately concentrically upon the CMOS substrate wafer, disposing a spacer structure upon the MEMS device wafer, wherein the spacer structure comprises a plurality of proximity spacers disposed upon a proximity flag, wherein the plurality of proximity spacers are disposed upon the MEMS device wafer, disposing a mask layer in contact to the plurality of proximity spacers, above and substantially parallel to the MEMS cap wafer, and forming a pattern upon the MEMS cap wafer using the mask layer.

    Method and structure of MEMS WLCSP fabrication
    4.
    发明授权
    Method and structure of MEMS WLCSP fabrication 有权
    MEMS WLCSP制作的方法和结构

    公开(公告)号：US09540232B2

    公开(公告)日：2017-01-10

    申请号：US14507177

    申请日：2014-10-06

    Applicant: mCube Inc.

    Inventor： Chien Chen Lee

    IPC: B81C1/00

    CPC classification number: B81C1/00301 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81C2203/0109 ,  B81C2203/0154

    Abstract: A method for fabricating a MEMS-IC device structure can include receiving a CMOS substrate comprising a plurality of CMOS circuits and a surface portion. A MEMS substrate having at least one MEMS device can be received and coupled to the CMOS substrate. The MEMS substrate and the surface portion of the CMOS substrate can be encapsulated with a molding material, which forms a top surface. A first plurality of vias can be created in the molding material from the top surface to the surface portion of the CMOS substrate. A conductive material can be disposed within the first plurality of vias such that the conductive material is electrically coupled to a portion of the CMOS substrate. A plurality of interconnects can be formed from the conductive material to the top surface of the molding material and a plurality of solder balls can be formed upon these interconnects.

    Abstract translation: 制造MEMS-IC器件结构的方法可以包括接收包括多个CMOS电路和表面部分的CMOS衬底。 具有至少一个MEMS器件的MEMS衬底可被接收并耦合到CMOS衬底。 MEMS衬底和CMOS衬底的表面部分可以用形成顶表面的成型材料封装。 可以在模制材料中从CMOS衬底的顶表面到表面部分形成第一多个通孔。 导电材料可以设置在第一多个通孔内，使得导电材料电耦合到CMOS衬底的一部分。 可以从导电材料形成多个互连件到模制材料的顶表面，并且可以在这些互连件上形成多个焊球。

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