公开(公告)号：US20240203995A1

公开(公告)日：2024-06-20

申请号：US18589774

申请日：2024-02-28

申请人： Bell Semiconductor, LLC

发明人： Pierre MORIN ,  Nicolas LOUBET

IPC分类号： H01L27/092 ,  H01L29/10 ,  H01L29/16 ,  H01L29/165 ,  H01L29/66 ,  H01L29/78

CPC分类号： H01L27/0924 ,  H01L29/1054 ,  H01L29/16 ,  H01L29/1608 ,  H01L29/165 ,  H01L29/66636 ,  H01L29/66795 ,  H01L29/7843 ,  H01L29/7848 ,  H01L29/7849 ,  H01L29/785

摘要： Methods and structures for forming strained-channel finFETs are described. Fin structures for finFETs may be formed using two epitaxial layers of different lattice constants that are grown over a bulk substrate. A first thin, strained, epitaxial layer may be cut to form strain-relieved base structures for fins. The base structures may be constrained in a strained-relieved state. Fin structures may be epitaxially grown in a second layer over the base structures. The constrained base structures can cause higher amounts of strain to form in the epitaxially-grown fins than would occur for non-constrained base structures.

公开(公告)号：US20230163130A1

公开(公告)日：2023-05-25

申请号：US18157298

申请日：2023-01-20

申请人： Bell Semiconductor, LLC

发明人： Pierre MORIN ,  Nicolas LOUBET

IPC分类号： H01L27/092 ,  H01L29/78 ,  H01L29/16 ,  H01L29/66 ,  H01L29/10 ,  H01L29/165

CPC分类号： H01L27/0924 ,  H01L29/7843 ,  H01L29/16 ,  H01L29/1608 ,  H01L29/785 ,  H01L29/66795 ,  H01L29/1054 ,  H01L29/165 ,  H01L29/66636 ,  H01L29/7848 ,  H01L29/7849

摘要： Methods and structures for forming strained-channel finFETs are described. Fin structures for finFETs may be formed using two epitaxial layers of different lattice constants that are grown over a bulk substrate. A first thin, strained, epitaxial layer may be cut to form strain-relieved base structures for fins. The base structures may be constrained in a strained-relieved state. Fin structures may be epitaxially grown in a second layer over the base structures. The constrained base structures can cause higher amounts of strain to form in the epitaxially-grown fins than would occur for non-constrained base structures.

公开(公告)号：US20230121119A1

公开(公告)日：2023-04-20

申请号：US18068718

申请日：2022-12-20

申请人： Bell Semiconductor, LLC

发明人： Nicolas LOUBET ,  Prasanna KHARE

IPC分类号： H01L29/417 ,  H01L29/66 ,  H01L29/78 ,  H01L29/08 ,  H01L29/165 ,  H01L27/088 ,  H01L29/49

摘要： A method of making a semiconductor device includes forming a fin mask layer on a semiconductor layer, forming a dummy gate over the fin mask layer, and forming source and drain regions on opposite sides of the dummy gate. The dummy gate is removed and the underlying fin mask layer is used to define a plurality of fins in the semiconductor layer. A gate is formed over the plurality of fins.

公开(公告)号：US11948943B2

公开(公告)日：2024-04-02

申请号：US18157298

申请日：2023-01-20

申请人： Bell Semiconductor, LLC

发明人： Pierre Morin ,  Nicolas Loubet

IPC分类号： H01L27/092 ,  H01L29/10 ,  H01L29/16 ,  H01L29/165 ,  H01L29/66 ,  H01L29/78

CPC分类号： H01L27/0924 ,  H01L29/1054 ,  H01L29/16 ,  H01L29/1608 ,  H01L29/165 ,  H01L29/66636 ,  H01L29/66795 ,  H01L29/7843 ,  H01L29/7848 ,  H01L29/7849 ,  H01L29/785

摘要： Methods and structures for forming strained-channel finFETs are described. Fin structures for finFETs may be formed using two epitaxial layers of different lattice constants that are grown over a bulk substrate. A first thin, strained, epitaxial layer may be cut to form strain-relieved base structures for fins. The base structures may be constrained in a strained-relieved state. Fin structures may be epitaxially grown in a second layer over the base structures. The constrained base structures can cause higher amounts of strain to form in the epitaxially-grown fins than would occur for non-constrained base structures.

公开(公告)号：US11610886B2

公开(公告)日：2023-03-21

申请号：US17365682

申请日：2021-07-01

申请人： Bell Semiconductor, LLC

发明人： Qing Liu ,  Prasanna Khare ,  Nicolas Loubet

IPC分类号： H01L27/088 ,  H01L21/84 ,  H01L29/66 ,  H01L29/78 ,  H01L29/08 ,  H01L21/265 ,  H01L29/417 ,  H01L21/8238 ,  H01L21/225 ,  H01L21/8234

摘要： A multi-fin FINFET device may include a substrate and a plurality of semiconductor fins extending upwardly from the substrate and being spaced apart along the substrate. Each semiconductor fin may have opposing first and second ends and a medial portion therebetween, and outermost fins of the plurality of semiconductor fins may comprise an epitaxial growth barrier on outside surfaces thereof. The FINFET may further include at least one gate overlying the medial portions of the semiconductor fins, a plurality of raised epitaxial semiconductor source regions between the semiconductor fins adjacent the first ends thereof, and a plurality of raised epitaxial semiconductor drain regions between the semiconductor fins adjacent the second ends thereof.

公开(公告)号：US20230197720A1

公开(公告)日：2023-06-22

申请号：US18171914

申请日：2023-02-21

申请人： Bell Semiconductor, LLC

发明人： Qing LIU ,  Prasanna KHARE ,  Nicolas LOUBET

IPC分类号： H01L27/088 ,  H01L21/84 ,  H01L29/66 ,  H01L29/78 ,  H01L29/08 ,  H01L21/265 ,  H01L29/417 ,  H01L21/8238 ,  H01L21/225 ,  H01L21/8234

CPC分类号： H01L27/0886 ,  H01L21/845 ,  H01L29/66795 ,  H01L29/785 ,  H01L29/0847 ,  H01L21/26506 ,  H01L21/2658 ,  H01L21/26586 ,  H01L29/41783 ,  H01L21/823821 ,  H01L29/66803 ,  H01L21/2253 ,  H01L21/26513 ,  H01L21/823418 ,  H01L21/823431 ,  H01L29/41791

摘要： A multi-fin FINFET device may include a substrate and a plurality of semiconductor fins extending upwardly from the substrate and being spaced apart along the substrate. Each semiconductor fin may have opposing first and second ends and a medial portion therebetween, and outermost fins of the plurality of semiconductor fins may comprise an epitaxial growth barrier on outside surfaces thereof. The FIN FET may further include at least one gate overlying the medial portions of the semiconductor fins, a plurality of raised epitaxial semiconductor source regions between the semiconductor fins adjacent the first ends thereof, and a plurality of raised epitaxial semiconductor drain regions between the semiconductor fins adjacent the second ends thereof.

公开(公告)号：US11670554B2

公开(公告)日：2023-06-06

申请号：US16426579

申请日：2019-05-30

申请人： Bell Semiconductor, LLC

发明人： Nicolas Loubet ,  Prasanna Khare ,  Qing Liu

IPC分类号： H01L27/092 ,  H01L21/8238 ,  H01L21/3065 ,  H01L21/308

CPC分类号： H01L21/823807 ,  H01L21/308 ,  H01L21/3065 ,  H01L21/823821 ,  H01L21/823878 ,  H01L27/0922

摘要： A method for co-integrating finFETs of two semiconductor material types, e.g., Si and SiGe, on a bulk substrate is described. Fins for finFETs may be formed in an epitaxial layer of a first semiconductor type, and covered with an insulator. A portion of the fins may be removed to form voids in the insulator, and the voids may be filled by epitaxially growing a semiconductor material of a second type in the voids. The co-integrated finFETs may be formed at a same device level.

公开(公告)号：US11587928B2

公开(公告)日：2023-02-21

申请号：US17093528

申请日：2020-11-09

申请人： Bell Semiconductor, LLC

发明人： Pierre Morin ,  Nicolas Loubet

IPC分类号： H01L27/092 ,  H01L29/16 ,  H01L29/66 ,  H01L29/78 ,  H01L29/10 ,  H01L29/165

摘要： Methods and structures for forming strained-channel finFETs are described. Fin structures for finFETs may be formed using two epitaxial layers of different lattice constants that are grown over a bulk substrate. A first thin, strained, epitaxial layer may be cut to form strain-relieved base structures for fins. The base structures may be constrained in a strained-relieved state. Fin structures may be epitaxially grown in a second layer over the base structures. The constrained base structures can cause higher amounts of strain to form in the epitaxially-grown fins than would occur for non-constrained base structures.

公开(公告)号：US20230260846A1

公开(公告)日：2023-08-17

申请号：US18306524

申请日：2023-04-25

申请人： Bell Semiconductor, LLC

发明人： Nicolas Loubet ,  Prasanna Khare ,  Qing Liu

IPC分类号： H01L21/8238 ,  H01L27/092 ,  H01L21/3065 ,  H01L21/308

CPC分类号： H01L21/823807 ,  H01L21/823821 ,  H01L27/0922 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/823878

摘要： A method for co-integrating finFETs of two semiconductor material types, e.g., Si and SiGe, on a bulk substrate is described. Fins for finFETs may be formed in an epitaxial layer of a first semiconductor type, and covered with an insulator. A portion of the fins may be removed to form voids in the insulator, and the voids may be filled by epitaxially growing a semiconductor material of a second type in the voids. The co-integrated finFETs may be formed at a same device level.