公开(公告)号：US20240019509A1

公开(公告)日：2024-01-18

申请号：US18251296

申请日：2021-10-28

申请人： CROCUS Technology SA

发明人： Jeffrey Childress ,  Nikita Strelkov ,  Andrey Timopheev

IPC分类号： G01R33/09 ,  G01R33/00 ,  H01F1/00

CPC分类号： G01R33/098 ,  G01R33/093 ,  G01R33/0052 ,  H01F1/0009

摘要： A magnetoresistive element for a magnetic sensor, the magnetoresistive element including a tunnel barrier layer between a reference layer having a fixed reference magnetization and a sense layer having a free sense magnetization, wherein the sense magnetization includes a stable vortex configuration. The magnetoresistive element further includes a reference pinning layer in contact with the reference layer and pining the reference magnetization by exchange-bias at a first blocking temperature. The magnetoresistive element further includes a sense pinning layer in contact with the sense layer and pining the sense magnetization by exchange-bias at a second blocking temperature lower that the first blocking temperature. Additionally, a method for manufacturing the magnetoresistive element.

公开(公告)号：US20230134728A1

公开(公告)日：2023-05-04

申请号：US17905278

申请日：2021-02-22

申请人： CROCUS Technology SA

发明人： Robert Zucker ,  Scott Fritz

IPC分类号： G01B7/30 ,  G01D5/14

摘要： Magnetic sensor for measuring an external magnetic field angle in a two-dimensional plane, including: a first and second sensing unit outputting, respectively, a first signal sin(θ) and a second signal cos(θ); a first multiplying DAC receiving the first signal and a first digital input sin(f*t) and outputting a first modulated output signal; a second multiplying DAC receiving the second signal and a second digital input cos(f*t) and outputting a second modulated output signal; a first RC filter receiving the first modulated output signal and outputting a first filtered signal sin(θ)*sin(f*t+RCd); a second RC filter receiving the second modulated output signal and outputting a second filtered signal sin(θ)*sin(f*t+RCd); an adder adding the first and second filtered signals and outputting a summed signal cos(f*t+RCd+θ); and an angle extracting unit for measuring the phase delay between the summed signal and a synchronization signal and determining the angle from the phase delay.

公开(公告)号：US20230066027A1

公开(公告)日：2023-03-02

申请号：US17760109

申请日：2021-01-29

申请人： CROCUS Technology SA

发明人： Léa Cuchet ,  Andrey Timopheev ,  Jeffrey Childress

IPC分类号： G01R33/00 ,  G01R33/09

摘要： A magnetoresistive sensor element including: a reference layer having a pinned reference magnetization; a sense layer having a free sense magnetization comprising a stable vortex configuration reversibly movable in accordance to an external magnetic field to be measured; a tunnel barrier layer between the reference layer and the sense layer; wherein the sense layer includes a first ferromagnetic sense portion in contact with the tunnel barrier layer and a second ferromagnetic sense portion in contact with the first ferromagnetic sense portion; the second ferromagnetic sense portion including a dilution element in a proportion such that a temperature dependence of a magnetic susceptibility of the sense layer substantially compensates a temperature dependence of a tunnel magnetoresistance of the magnetoresistive sensor element. Also, a method for manufacturing the magnetoresistive sensor element.

公开(公告)号：US10191719B2

公开(公告)日：2019-01-29

申请号：US15552508

申请日：2016-02-22

申请人： CROCUS Technology SA

发明人： Sebastien Bandiera ,  Quentin Stainer

IPC分类号： G06F7/58

摘要： A programmable magnetic device for generating random numbers during a programming operation, including an array of a plurality of magnetic tunnel junctions. Each magnetic tunnel junction includes a reference layer having a reference magnetization; a tunnel barrier layer; and a storage layer having a storage magnetization. The programmable magnetic device is arranged such that, during the programming operation, the storage magnetization is orientable in an unstable magnetization configuration and relaxable randomly in one of a plurality of stable or metastable configurations from the unstable magnetization configuration.

公开(公告)号：US10157652B2

公开(公告)日：2018-12-18

申请号：US15578841

申请日：2016-05-31

申请人： CROCUS Technology SA

发明人： Quentin Stainer

IPC分类号： G11C11/00 ,  G11C11/16 ,  H03F15/00 ,  G06G7/14 ,  H01F10/32 ,  H01L43/08

摘要： A magnetic device configured to perform an analog adder circuit function and including a plurality of magnetic units. Each magnetic unit includes n magnetic tunnel junctions electrically connected in series via a current line. Each magnetic tunnel junction includes a storage magnetic layer having a storage magnetization, a sense magnetic layer having a sense magnetization, and a tunnel barrier layer. Each magnetic unit also includes n input lines, each being configured to generate a magnetic field adapted for varying a direction of the sense magnetization and a resistance of the n magnetic tunnel junctions, based on an input. Each of the n magnetic units is configured to add said n inputs to generate an output signal that varies in response to the n resistances.

公开(公告)号：US10115445B2

公开(公告)日：2018-10-30

申请号：US15741805

申请日：2016-06-27

申请人： CROCUS Technology SA

发明人： Quentin Stainer

IPC分类号： G11C11/00 ,  G11C11/16 ,  H01L43/08 ,  H01L27/22 ,  H01F10/32 ,  H01L43/02

摘要： A magnetic memory device including a plurality of magnetic units, each unit including a first and second magnetic tunnel junctions—electrically connected in series by a current line and a strap. Each junction includes a first and second storage layer having a first and second storage magnetization and a first sense magnetic layer having a first and second senses magnetization. A field line is configured to provide an input signal generating a first and second magnetic field for varying the first and second sense magnetization. Each magnetic unit is provided with a data state such that the first and second storage magnetizations are aligned in opposed directions. The first and second magnetic field are adapted for varying respectively the first and second sense magnetization in a first and second direction opposed to the first direction.

公开(公告)号：US10062833B2

公开(公告)日：2018-08-28

申请号：US15516079

申请日：2015-09-24

申请人： CROCUS Technology SA

发明人： Bertrand Cambou

IPC分类号： H01L43/02 ,  G11C11/16 ,  H01L43/12 ,  H01L43/08 ,  H01L27/22 ,  H01L43/10

CPC分类号： H01L43/02 ,  G11C11/161 ,  G11C11/1673 ,  H01L27/222 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

摘要： A MRAM-based magnetic device including an electrical interconnecting device including: a magnetic tunnel junction; a strap portion electrically connecting a lower end of the magnetic tunnel junction; a current line portion electrically connecting an upper end of the magnetic tunnel junction; an upper metallic stud electrically connecting a lower metallic stud through a via; the strap portion being in direct electrical contact with the via, such that a current passing in the magnetic tunnel junction flows directly between the strap portion and the via and between the via and the lower metallic stud or the upper metallic stud.

公开(公告)号：US09620187B2

公开(公告)日：2017-04-11

申请号：US14772916

申请日：2014-02-21

申请人： Crocus Technology SA

发明人： Quentin Stainer

IPC分类号： G11C11/16 ,  H01L43/08 ,  H01L43/02

CPC分类号： G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  H01L43/02 ,  H01L43/08

摘要： Self-referenced magnetic random access memory (MRAM) cell including a magnetic tunnel junction including a sense layer; a storage layer having a storage magnetization; a tunnel barrier layer between the sense and the storage layers; and an antiferromagnetic layer exchange-coupling the storage layer such that the storage magnetization can be pinned when the antiferromagnetic layer is below a critical temperature and freely varied when the antiferromagnetic layer is heated at or above the critical temperature. The sense layer includes a first sense layer having a first sense magnetization, a second sense layer having a second sense magnetization and spacer layer between the first and second sense layers. The MRAM cell can be read with low power consumption.

公开(公告)号：US09336846B2

公开(公告)日：2016-05-10

申请号：US14762264

申请日：2014-01-16

申请人： CROCUS Technology SA

发明人： Ioan Lucian Prejbeanu ,  Jerome Moritz ,  Bernard Dieny

IPC分类号： G11C11/16 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

CPC分类号： G11C11/161 ,  G11C11/16 ,  G11C11/1675 ,  G11C2211/5615 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

摘要： MRAM element having a magnetic tunnel junction including a reference layer, a storage layer, a tunnel barrier layer between the reference and storage layers, and a storage antiferromagnetic layer. The storage antiferromagnetic layer has a first function of exchange-coupling a storage magnetization of the storage layer and a second function of heating the magnetic tunnel junction when a heating current in passed in the magnetic tunnel junction. The MRAM element has better data retention and low writing temperature.

摘要翻译： MRAM元件具有包括参考层的磁性隧道结，存储层，参考层和存储层之间的隧道势垒层，以及存储反铁磁层。 存储反铁磁层具有交换耦合存储层的存储磁化的第一功能和当通过磁性隧道结中的加热电流时加热磁性隧道结的第二功能。 MRAM元件具有更好的数据保留和低写入温度。

公开(公告)号：US09324936B2

公开(公告)日：2016-04-26

申请号：US14431140

申请日：2013-09-12

申请人： CROCUS Technology SA

发明人： Ioan Lucian Prejbeanu ,  Bernard Dieny ,  Kenneth MacKay ,  Bertrand Cambou

IPC分类号： H01L43/00 ,  H01L29/82 ,  H01L43/02 ,  H03F15/00 ,  G11C11/16 ,  H01L43/10 ,  H03K19/18

CPC分类号： H01L43/02 ,  G11C11/16 ,  G11C11/1675 ,  H01L43/10 ,  H03F15/00 ,  H03K19/18

摘要： A magnetic logic unit (MLU) cell includes a first and second magnetic tunnel junction, each including a first magnetic layer having a first magnetization, a second magnetic layer having a second magnetization, and a barrier layer; and a field line for passing a field current such as to generate an external magnetic field adapted to adjust the first magnetization. The first and second magnetic layers and the barrier layer are arranged such that the first magnetization is magnetically coupled antiparallel with the second magnetization through the barrier layer. The MLU cell also includes a biasing device arranged for applying a static biasing magnetic field oriented substantially parallel to the external magnetic field such as to orient the first magnetization at about 90° relative to the second magnetization, the first and second magnetizations being oriented symmetrically relative to the direction of the external magnetic field.

摘要翻译： 磁逻辑单元（MLU）单元包括第一和第二磁性隧道结，每个包括具有第一磁化的第一磁性层，具有第二磁化的第二磁性层和阻挡层; 以及用于通过场电流的场线，以产生适于调整第一磁化的外部磁场。 第一和第二磁性层和阻挡层被布置成使得第一磁化与通过阻挡层的第二磁化反平行地磁耦合。 MLU单元还包括偏置装置，其被布置成施加基本上平行于外部磁场定向的静态偏置磁场，以便相对于第二磁化将第一磁化定向成约90°，第一和第二磁化定向对称相对 到外部磁场的方向。