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    METHOD OF MANUFACTURING SILICON-OXIDE-COATED SOFT MAGNETIC POWDER
    1.
    发明申请
    METHOD OF MANUFACTURING SILICON-OXIDE-COATED SOFT MAGNETIC POWDER 有权

    公开(公告)号：US20240416418A1

    公开(公告)日：2024-12-19

    申请号：US18819107

    申请日：2024-08-29

    Applicant: DOWA ELECTRONICS MATERIALS CO., LTD.

    Inventor： Hidefumi FUJITA ,  Koji TANOUE ,  Keisuke YAMADA ,  Tetsuya KAWAHITO

    IPC: B22F1/16 ,  H01F1/147

    Abstract: [Problem] To provide a silicon oxide-coated soft magnetic powder having a silicon oxide coating with few defects so as to have an excellent insulation property, and having good dispersibility in an aqueous solution, and capable of obtaining a high filling factor when molding a green compact.
    [Means for Solution] A highly insulating silicon oxide-coated soft magnetic powder, in which the ratio of a volume-based cumulative 50% particle diameter D50 (HE) according to a dry laser diffraction particle size distribution analysis to the same particle diameter D50 (MT) according to a wet laser diffraction particle size distribution analysis is 0.7 or more, and a coverage ratio R defined by R=Si×100/(Si+M) (wherein Si and M are molar fractions of Si and elements constituting the soft magnetic powder) is 70% or more is obtained by subjecting a slurry containing a soft magnetic powder containing 20 mass % or more of iron and a hydrolysate of a silicon alkoxide to a dispersion treatment when the surface of the soft magnetic powder is coated with the hydrolysate in a mixed solvent of water and an organic substance.

    Method of manufacturing optical semiconductor device and optical semiconductor device
    2.
    发明授权
    Method of manufacturing optical semiconductor device and optical semiconductor device 有权

    公开(公告)号：US12113155B2

    公开(公告)日：2024-10-08

    申请号：US17754113

    申请日：2020-09-18

    Applicant: DOWA Electronics Materials Co., Ltd.

    Inventor： Tsukasa Maruyama ,  Takashi Araki ,  Takehiro Miyaji

    IPC: H01L33/48 ,  H01L33/62

    CPC classification number: H01L33/486 ,  H01L33/62 ,  H01L2933/0066

    Abstract: The method of manufacturing an optical semiconductor device includes: a mounting step of placing an optical semiconductor chip on a package substrate made of ceramic; a storing step of storing the package substrate after the mounting step in a first dry atmosphere; a placing step of subjecting the optical semiconductor chip on the package substrate to a second dry atmosphere and placing a light transparent window on a joint portion of the package substrate with a joint material therebetween; and a sealing step of joining the joint portion and the light transparent window with the joint material in a low oxygen concentration atmosphere having an oxygen concentration of 1 vol % or less, thereby encapsulating the optical semiconductor chip in a confined space formed by the package substrate and the light transparent window.

    METHOD OF PRODUCING GAAS WAFER, AND GAAS WAFER GROUP
    4.
    发明公开
    METHOD OF PRODUCING GAAS WAFER, AND GAAS WAFER GROUP 审中-公开

    公开(公告)号：US20240162031A1

    公开(公告)日：2024-05-16

    申请号：US18550679

    申请日：2022-03-17

    Applicant: DOWA Electronics Materials Co., Ltd.

    Inventor： Junji SUGIURA

    IPC: H01L21/02 ,  H01L29/20

    CPC classification number: H01L21/02013 ,  H01L21/02021 ,  H01L21/02035 ,  H01L29/20

    Abstract: A method of producing a GaAs wafer having excellent OF orientation stability even in a GaAs wafer having an off angle, and a GaAs wafer group are provided. A method of producing a GaAs wafer includes: a grinding step of grinding a peripheral surface of a GaAs ingot including formation of a provisional orientation flat; a slicing step of slicing the GaAs ingot after the grinding step to cut out a material wafer having an off angle; and a cleaving step of applying marking to the material wafer according to an orientation of an orientation flat determined based on the provisional orientation flat and cleaving the material wafer toward a peripheral surface of the material wafer from the marking to form the orientation flat.

    Semiconductor light-emitting element and method of producing semiconductor light-emitting element
    6.
    发明授权
    Semiconductor light-emitting element and method of producing semiconductor light-emitting element 有权

    公开(公告)号：US11888090B2

    公开(公告)日：2024-01-30

    申请号：US17418849

    申请日：2019-12-12

    Applicant: DOWA Electronics Materials Co., Ltd.

    Inventor： Yuta Koshika ,  Yoshitaka Kadowaki

    IPC: H01L33/06 ,  H01L33/00 ,  H01L33/30

    CPC classification number: H01L33/06 ,  H01L33/0062 ,  H01L33/30

    Abstract: Provided is a semiconductor light-emitting element having improved light emission output. The semiconductor light-emitting element includes a light-emitting layer having a layered structure in which a first III-V compound semiconductor layer and a second III-V compound semiconductor layer having different composition ratios are repeatedly stacked. The first and second III-V compound semiconductor layers each contain three or more types of elements that are selected from Al, Ga, and In and from As, Sb, and P. The composition wavelength difference between the composition wavelength of the first III-V compound semiconductor layer and the composition wavelength of the second III-V compound semiconductor layer is 50 nm or less. The ratio of the lattice constant difference between the lattice constant of the first III-V compound semiconductor layer and the lattice constant of the second III-V compound semiconductor layer is not less than 0.05% and not more than 0.60%.

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