公开(公告)号：US10090460B2

公开(公告)日：2018-10-02

申请号：US15349074

申请日：2016-11-11

Applicant: National Institute of Advanced Industrial Science and Technology

Inventor： Yuta Saito ,  Junji Tominaga ,  Reiko Kondo

IPC: H01L29/49 ,  H01L45/00 ,  H01L27/105 ,  H01L29/82 ,  C23C14/34 ,  C30B23/02 ,  C30B29/46 ,  C30B29/68 ,  G11C11/16

Abstract: A crystal orientation layer laminated structure capable of widely selecting materials for a base substrate and an electrode substrate, an electronic memory using the crystal orientation layer laminated structure and a method for manufacturing the crystal orientation layer laminated structure are provided. The crystal orientation layer laminated structure according to the present invention has such a feature as including a substrate, including an orientation control layer which is laminated on the substrate, which is made of any of germanium, silicon, tungsten, germanium-silicon, germanium-tungsten and silicon-tungsten, and whose thickness is at least 1 nm or more, and including a first crystal orientation layer which is laminated on the orientation control layer, which is made of any of SbTe, Sb2Te3, BiTe, Bi2Te3, BiSe and Bi2Se3 as a main component, and which is oriented in a certain crystal orientation.

公开(公告)号：US09929311B2

公开(公告)日：2018-03-27

申请号：US14777176

申请日：2014-07-16

Applicant: MARUBUN CORPORATION ,  TOSHIBA KIKAI KABUSHIKI KAISHA ,  RIKEN ,  NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY ,  ULVAC, INC. ,  TOKYO OHKA KOGYO CO., LTD.

Inventor： Yukio Kashima ,  Eriko Matsuura ,  Mitsunori Kokubo ,  Takaharu Tashiro ,  Takafumi Ookawa ,  Hideki Hirayama ,  Sung Won Youn ,  Hideki Takagi ,  Ryuichiro Kamimura ,  Yamato Osada ,  Satoshi Shimatani

IPC: H01L33/22 ,  G06F17/50 ,  G06F17/10 ,  H01L33/44 ,  H01L33/50 ,  H01L33/24

CPC classification number: H01L33/22 ,  G06F17/10 ,  G06F17/5009 ,  H01L33/24 ,  H01L33/44 ,  H01L33/502 ,  H01L2933/0083

Abstract: A semiconductor light emitting element with a design wavelength of λ, comprising a photonic crystal periodic structure having two structures with different refractive indices at each of one or more interfaces between layers that form the light emitting element. The period a and the radius R that are parameters of each of the one or more periodic structures and the design wavelength λ satisfy Bragg conditions. The ratio (R/a) between the period a and the radius R is a value determined so that a predetermined photonic band gap (PBG) for TE light becomes maximum for each periodic structure. The parameters of each periodic structure are determined so that light extraction efficiency of the entire semiconductor light emitting element with respect to light with the wavelength λ becomes maximum as a result of conducting a simulation analysis with a FDTD method using as variables the depth h of the periodic structure that is of greater than or equal to 0.5a and the period a and the radius R that are determined for each order m of the Bragg conditions.

公开(公告)号：US09362482B2

公开(公告)日：2016-06-07

申请号：US13707897

申请日：2012-12-07

Applicant: Canon Kabushiki Kaisha ,  Kyoto University ,  National Institute of Advanced Industrial Science and Technology

Inventor： Makoto Kubota ,  Kenji Takashima ,  Masaki Azuma ,  Yoshitaka Nakamura ,  Yuichi Shimakawa ,  Takashi Iijima ,  Bong-Yeon Lee

IPC: B05D5/12 ,  H01L41/22 ,  C04B35/01 ,  C04B35/26 ,  H01L41/187 ,  H01L41/047 ,  H01L41/318

CPC classification number: H01L41/22 ,  C04B35/01 ,  C04B35/26 ,  C04B2235/3272 ,  C04B2235/3275 ,  C04B2235/3298 ,  C04B2235/441 ,  C04B2235/449 ,  C04B2235/656 ,  C04B2235/658 ,  C04B2235/6585 ,  C04B2235/768 ,  C04B2235/787 ,  C04B2235/963 ,  H01L41/0478 ,  H01L41/1878 ,  H01L41/318 ,  Y10T29/42

Abstract: Provided are a bismuth-based piezoelectric material whose insulation property is improved while its performance as a piezoelectric body is not impaired and a piezoelectric device using the piezoelectric material. The piezoelectric material includes a perovskite-type metal oxide represented by the following general formula (1): Bix(Fe1-yCoy)O3  (1) where 0.95≦x≦1.25 and 0≦y≦0.30, and a root mean square roughness Rq (nm) of a surface of the piezoelectric material satisfies a relationship of 0

Abstract translation: 提供一种在不损害其作为压电体的性能的同时提高其绝缘性能的铋基压电材料和使用该压电材料的压电装置。 压电材料包括由以下通式（1）表示的钙钛矿型金属氧化物：Bix（Fe1-yCoy）O3（1）其中0.95＆nlE; x＆nlE; 1.25和0＆amp; nlE; y＆nlE; 0.30，均方根粗糙度 压电材料的表面的Rq（nm）满足0

公开(公告)号：US08217293B2

公开(公告)日：2012-07-10

申请号：US10541704

申请日：2004-01-09

Applicant: Norio Ohtake ,  Morio Murayama ,  Takashi Hiraga ,  Mineyuki Hattori ,  Kazuhiro Homma

Inventor： Norio Ohtake ,  Morio Murayama ,  Takashi Hiraga ,  Mineyuki Hattori ,  Kazuhiro Homma

IPC: B01J19/12 ,  B01J19/14 ,  B01D5/00 ,  G01R33/26

CPC classification number: A61K49/1815 ,  C01B23/0036 ,  C01B2210/0037 ,  C01B2210/0043

Abstract: The present invention provides producing method and producing apparatus in which polarized xenon gas of high concentration is obtained without being frozen, and polarized xenon gas can be produced continuously. A glass cell having solid rubidium and solid xenon filled in vacuum is heated to be gas xenon and gas-liquid mixed rubidium, to which a magnetic field is applied to irradiate a laser beam thereby obtaining polarized xenon gas of high concentration.

Abstract translation: 本发明提供了在不冷冻的情况下获得高浓度的偏振氙气的制造方法和制造装置，并且能够连续生产偏振氙气。 将具有固体铷和填充真空的固体氙的玻璃电池加热成为气体氙气和气液混合铷，施加磁场以照射激光束，从而获得高浓度的偏振氙气。

公开(公告)号：US08124008B2

公开(公告)日：2012-02-28

申请号：US10495902

申请日：2002-11-29

Applicant: Toshiyuki Murakami ,  Tetsuo Shiraga ,  Kiyohito Ishida ,  Katsunari Oikawa

Inventor： Toshiyuki Murakami ,  Tetsuo Shiraga ,  Kiyohito Ishida ,  Katsunari Oikawa

IPC: C22C38/60 ,  C22C38/18

CPC classification number: C22C38/002 ,  C22C38/04 ,  C22C38/18 ,  C22C38/58 ,  C22C38/60

Abstract: A low carbon free cutting steel can be obtained by allowing the steel to contain 0.02 to 0.15 mass % of C, 0.05 to 1.8 mass % of Mn, 0.20 to 0.49 mass % of S, more than 0.01 mass % and not more than 0.03 mass % of O, 0.3 to 2.3% of Cr, and the balance consisting of Fe and inevitable impurities, the Cr/S ratio falling within a range of between 2 and 6.

Abstract translation: 可以通过使钢含有C：0.02〜0.15质量％，Mn：0.18〜0.8质量％，S：0.20〜0.49质量％，0.03质量％以上0.03质量％以下， 的O，0.3〜2.3％的Cr，余量由Fe和不可避免的杂质构成，Cr / S的比在2〜6的范围内。

公开(公告)号：US20100231095A1

公开(公告)日：2010-09-16

申请号：US12721131

申请日：2010-03-10

Applicant: Makoto Kubota ,  Kenji Takashima ,  Masaki Azuma ,  Yoshitaka Nakamura ,  Yuichi Shimakawa ,  Takashi Iijima ,  Bong-Yeon Lee

Inventor： Makoto Kubota ,  Kenji Takashima ,  Masaki Azuma ,  Yoshitaka Nakamura ,  Yuichi Shimakawa ,  Takashi Iijima ,  Bong-Yeon Lee

IPC: H01L41/18 ,  C04B35/01 ,  H01L41/047 ,  H01L41/22

CPC classification number: H01L41/22 ,  C04B35/01 ,  C04B35/26 ,  C04B2235/3272 ,  C04B2235/3275 ,  C04B2235/3298 ,  C04B2235/441 ,  C04B2235/449 ,  C04B2235/656 ,  C04B2235/658 ,  C04B2235/6585 ,  C04B2235/768 ,  C04B2235/787 ,  C04B2235/963 ,  H01L41/0478 ,  H01L41/1878 ,  H01L41/318 ,  Y10T29/42

Abstract: Provided are a bismuth-based piezoelectric material whose insulation property is improved while its performance as a piezoelectric body is not impaired and a piezoelectric device using the piezoelectric material. The piezoelectric material includes a perovskite-type metal oxide represented by the following general formula (1): Bix(Fe1-yCoy)O3  (1) where 0.95≦x≦1.25 and 0≦y≦0.30, and a root mean square roughness Rq (nm) of a surface of the piezoelectric material satisfies a relationship of 0

Abstract translation: 提供一种在不损害其作为压电体的性能的同时提高其绝缘性能的铋基压电材料和使用该压电材料的压电装置。 压电材料包括由以下通式（1）表示的钙钛矿型金属氧化物：Bix（Fe1-yCoy）O3（1）其中0.95＆nlE; x＆nlE; 1.25和0＆amp; nlE; y＆nlE; 0.30，均方根粗糙度 压电材料的表面的Rq（nm）满足0

公开(公告)号：US07612981B2

公开(公告)日：2009-11-03

申请号：US12010928

申请日：2008-01-31

Applicant: Takafumi Seto ,  Makoto Hirasawa ,  Yasufumi Hozumi ,  Masaaki Tsuji ,  Akira Okuyama ,  Susumu Saito

Inventor： Takafumi Seto ,  Makoto Hirasawa ,  Yasufumi Hozumi ,  Masaaki Tsuji ,  Akira Okuyama ,  Susumu Saito

IPC: H01T23/00 ,  G03G15/02 ,  H05F3/00

CPC classification number: A61L9/22 ,  H01T23/00

Abstract: The present invention is relating to an ion generator and an ionizer, in which the ion generator can obtain stable ion generation even if the electrode and the power supply slightly change, satisfies voltage and frequency conditions for realizing an ozone concentration less than 50 ppb as an allowable concentration. The ion generator of the present invention is characterized as a fan-type ion generator including a dielectric body, a discharge electrode having fine protrusions arranged on the surface of this dielectric body, and an induction electrode arranged on the back surface of the dielectric body, comprising: an ion element in which by applying a sinusoidal AC high voltage to the discharge electrode, a potential difference from the induction electrode is generated, plasma is formed on the surface of the dielectric body, and positive ions, negative ions, and ozone are produced according to air ionization; and a fan which generates an airflow with respect to the discharge electrode, wherein the peak-to-peak voltage is not less than 3.5 kV and not more than 7 kV, the frequency f, and the relationship between the voltage V and the frequency f satisfies a specific parameter. And, the ionizer of the present invention is characterized that ionization is performed by using the above mentioned fan-type ion generator.

Abstract translation: 本发明涉及一种离子发生器和离子发生器，其中即使电极和电源稍微改变，离子发生器也可获得稳定的离子产生，满足用于实现小于50ppb的臭氧浓度的电压和频率条件，作为 容许浓度 本发明的离子发生器的特征在于：一种风扇式离子发生器，其包括电介质体，具有设置在该电介质体表面上的微细突起的放电电极，以及布置在电介质体的背面上的感应电极， 包括：离子元件，其中通过向放电电极施加正弦AC高电压，产生与感应电极的电位差，在电介质体的表面上形成等离子体，正离子，负离子和臭氧为 根据空气电离产生; 以及相对于放电电极产生气流的风扇，其峰值电压不小于3.5kV且不大于7kV，频率f以及电压V与频率f之间的关系 满足特定参数。 并且，本发明的电离器的特征在于，使用上述风扇式离子发生器进行离子化。

公开(公告)号：US07135583B2

公开(公告)日：2006-11-14

申请号：US10467411

申请日：2002-02-12

Applicant: Li-biao Han ,  Chang-qiu Zhao ,  Masato Tanaka

Inventor： Li-biao Han ,  Chang-qiu Zhao ,  Masato Tanaka

IPC: C07F9/40

CPC classification number: C07F9/655345 ,  C07F9/3217 ,  C07F9/3223 ,  C07F9/3235 ,  C07F9/5316 ,  C07F9/532 ,  C07F9/5329

Abstract: A novel process for preparation of alkenylphosphine oxides or alkenylphosphinic acid esters provided by which the objective compounds can be easily, safely and efficiently synthesized and easily separated and purified with little formation of by-products. Specifically, a process of conducting the addition reaction of an easily available secondary phosphine oxide or hydrogen phosphinic acid ester with an acetylene compound with a catalyst containing a Group 9 or 10 metal of the periodic table to thereby obtain the corresponding alkenylphosphine oxide or alkenylphosphinic acid ester.

Abstract translation: 一种制备烯基氧化膦或烯基次膦酸酯的新方法，通过该方法可以容易，安全和有效地合成目标化合物，并且容易地分离和纯化，几乎不形成副产物。 具体地说，是将容易获得的次级氧化膦或次膦酸钠与乙炔化合物与含有周期表第9或10族金属的催化剂进行加成反应的方法，从而得到相应的烯基氧化膦或链烯基次膦酸酯 。

公开(公告)号：US06987138B2

公开(公告)日：2006-01-17

申请号：US10461865

申请日：2003-06-16

Applicant: Yutaka Tokiwa ,  Takao Raku

Inventor： Yutaka Tokiwa ,  Takao Raku

IPC: C08L89/00

CPC classification number: C08L67/04 ,  C08L2666/26

Abstract: This invention provides a novel rapidly biodegradable polylactide resin composition while maintaining the good mechanical strength and physical properties of polylactide. This biodegradable polylactide resin composition comprises at least one protein selected from silk, gelatin, keratin, elastin, gluten, zein, or soybean. This composition further comprises degraded mannan, and furthermore, a filler.

Abstract translation: 本发明提供一种快速生物降解的聚丙交酯树脂组合物，同时保持了聚丙交酯的良好机械强度和物理性能。 该生物可降解聚丙交酯树脂组合物包含至少一种选自丝，明胶，角蛋白，弹性蛋白，谷蛋白，玉米蛋白或大豆的蛋白质。 该组合物还包含降解的甘露聚糖，此外还包含填料。

公开(公告)号：US10358466B2

公开(公告)日：2019-07-23

申请号：US15706144

申请日：2017-09-15

Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY

Inventor： Takashi Sato ,  Yasunori Chiba ,  Hiroaki Tateno ,  Hiroyuki Kaji ,  Masanori Goto ,  Hisashi Narimatsu

IPC: C07K14/42 ,  G01N33/53

Abstract: A Wisteria floribunda monomeric lectin polypeptide is provided. The Wisteria floribunda monomeric lectin polypeptide includes any one of the amino acid sequences selected from the group consisting of: (1) the amino acid sequence represented by SEQ ID NO: 2; (2) the amino acid sequence defined in (1) above, except that one to 20 amino acids at positions other than Cys272 position is/are deleted, substituted, inserted, or added; and (3) the amino acid sequence defined in (1) or (2) above, further having an N-terminus deletion of one to 30 amino acids, in which Cys272 is alkylated, and the polypeptide is capable of specifically binding to a GalNAc terminal sugar chain.