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20 条记录 (耗时 0.011 秒)

    Holder for semi-conductor diodes
    3.
    发明授权
    Holder for semi-conductor diodes 失效
    半导体二极管座

    公开(公告)号：US3173068A

    公开(公告)日：1965-03-09

    申请号：US20157462

    申请日：1962-06-11

    申请人： PHILIPS CORP

    发明人： HEINZ GESCH

    IPC分类号： C07F7/22 ,  C08F10/00 ,  H01L23/367 ,  H01L23/40 ,  H01L25/10 ,  H01L25/11

    CPC分类号： C10M7/00 ,  C07F7/2292 ,  C10M3/00 ,  H01L23/3672 ,  H01L25/11 ,  H01L2924/0002 ,  H01L2924/00

    摘要： 992,507. Semi-conductor diode assembly. PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd. July 4, 1962 [July 7, 1961], No. 25660/62. Heading H1K. A semi-conductor diode assembly consists of a preferably insulating tubular holder containing one or more disc-shaped or tubular semi-conductor diodes and having a plurality of slots through each of which a tag portion of a cooling plate projects into the interior of the holder to thermally contact a diode. Each cooling has an outer part 7 (Fig. 3) partially embracing the holder. The tag may be tapered (Fig. 7, not shown) so as to engage a holder with longer slots in one wall than in the other. The embodiment of Fig. 8 has a ceramic envelope 1 and two metal end caps 2 enclosing a diode, held between resilient tags 12 of cooling plates 11, which plates serve also as current electrodes to the diode. In a further arrangement (Fig. 9, not shown) several diodes separated by conductive discs and positioned by an intermediate spring in a ceramic tube are interconnected in a circuit arrangement with the tags carrying the currents. The tag ends protruding from the tubular bodies are twisted or bent over to position the holder relative to the supporting plates.

    Organotin process
    5.
    发明授权
    Organotin process 失效
    有机工艺

    公开(公告)号：US3726906A

    公开(公告)日：1973-04-10

    申请号：US3726906D

    申请日：1970-11-09

    申请人： M & T CHEMICALS INC

    发明人： REIFENBERG G ,  CONSIDINE W

    IPC分类号： C07F7/22

    CPC分类号： C07F7/2292

    摘要： This invention is a method for preparing compounds of the formula R3SnSnR3 comprising pyrolyzing a triorganotin formate of the formula

    WHEREIN R is a hydrocarbon selected from the group consisting of alkyl, alkenyl, aralkyl, and cycloalkyl radicals, and separating R3SnSnR3.

    摘要翻译： 本发明是一种制备式R 3 SnSnR 3的化合物的方法，其包括热解下式的三有机锡甲酸盐：其中R是选自烷基，烯基，芳烷基和环烷基的烃，并分离R3SnSnR3。

    Method of preparing hexaorganodistannanes
    6.
    发明授权
    Method of preparing hexaorganodistannanes 失效
    制备十六烷基甘氨酸的方法

    公开(公告)号：US3673230A

    公开(公告)日：1972-06-27

    申请号：US3673230D

    申请日：1971-01-18

    申请人： MAT CHEM INC

    发明人： REIFENBERG GERALD H ,  CONSIDINE WILLIAM J

    IPC分类号： C07F7/22 ,  C08F4/12

    CPC分类号： C07F7/2292 ,  C08F4/12

    摘要： This invention is a method for preparing compounds of the formula R3SnSnR3 comprising pyrolyzing a triorganotin formate of the formula WHEREIN R is a hydrocarbon selected from the group consisting of alkyl, alkenyl, aralkyl, and cycloalkyl radicals, and separating R3SnSnR3.

    摘要翻译： 本发明是一种制备式R 3 SnSnR 3的化合物的方法，其包括热解下式的三有机锡甲酸盐：其中R是选自烷基，烯基，芳烷基和环烷基的烃，并分离R3SnSnR3。

    Triorganotin lithium, process to prepare same and anionic polymerization initiated therewith
    7.
    发明授权
    Triorganotin lithium, process to prepare same and anionic polymerization initiated therewith 失效
    三有机锡锂，制备相同的方法和由其引发的阴离子聚合

    公开(公告)号：US5502129A

    公开(公告)日：1996-03-26

    申请号：US242648

    申请日：1994-05-13

    申请人： William L. Hergenrother ,  W. Novis Smith ,  Anthony J. Muratore, III ,  Jay C. Sigle ,  Mark T. Nemeth

    发明人： William L. Hergenrother ,  W. Novis Smith ,  Anthony J. Muratore, III ,  Jay C. Sigle ,  Mark T. Nemeth

    IPC分类号： C07F7/22 ,  C08F4/00 ,  C08F4/42 ,  C08F4/48 ,  C08F4/58 ,  C08F36/00 ,  C08F36/04 ,  C08F236/10

    CPC分类号： C07F7/2292 ,  C08F36/04

    摘要： Solutions of triorganotin lithium are described having low residual concentrations (preferably less than 2,000 ppm) of halide. These are produced by a two-step process.Triorganotin halide is reacted with lithium to produce hexaorgano ditin and a precipitate of lithium halide. The lithium halide precipitate is removed by filtration and/or use of highly concentrated reaction conditions. Then the hexaorgano ditin is further reacted with lithium to form the triorgano substituted tin lithium. The lithium halide is less soluble in hot tetrahydrofuran (THF) and/or more concentrated solutions. THF is a preferred solvent for the reaction. The low-temperature reactions described result in low amounts of inactive and/or undesirable byproducts. These triorganotin lithium compounds are useful as anionic initiators that result in polymers with terminal tin compounds, e.g., triorganotin, attached to the terminal end of the polymer where initiation occurred. The polymers with terminal tin compounds have lower hysteresis in cured carbon black-filled elastomeric compounds. Low concentrations of residual halides in the initiators and consequently in the polymers has been associated with reduced amounts of volatile organotin compounds being generated during processing of polymers with organotin terminal groups.

    摘要翻译： 描述了具有低残留浓度（优选小于2,000ppm）卤化物的三有机锡的溶液。 这些是通过两步法生成的。 三卤化锡与锂反应产生六有机二甲苯和卤化锂沉淀物。 通过过滤和/或使用高度浓缩的反应条件除去卤化锂沉淀物。 然后将六有机基二丁基与锂进一步反应形成三有机取代的锡锂。 卤化锂在热四氢呋喃（THF）和/或更浓缩的溶液中较少溶解。 THF是反应的优选溶剂。 所描述的低温反应导致低量的无活性和/或不期望的副产物。 这些三有机锡锂化合物可用作阴离子引发剂，其导致与末端锡化合物例如三有机锡的聚合物，其连接到聚合物的起始发生的末端。 具有末端锡化合物的聚合物在固化的炭黑填充的弹性体化合物中具有较低的滞后。 引发剂中和因此在聚合物中的低浓度残余卤化物与在具有有机锡末端基团的聚合物加工期间产生的挥发性有机锡化合物的量减少有关。