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    Electronic device and method for manufacturing same
    1.
    发明授权
    Electronic device and method for manufacturing same 失效
    电子装置及其制造方法

    公开(公告)号：US08653519B2

    公开(公告)日：2014-02-18

    申请号：US13582611

    申请日：2011-03-31

    申请人： Tsutomu Ichihara ,  Kenji Tsubaki ,  Masao Kubo ,  Nobuyoshi Koshida

    发明人： Tsutomu Ichihara ,  Kenji Tsubaki ,  Masao Kubo ,  Nobuyoshi Koshida

    IPC分类号： H01L29/04

    CPC分类号： H01J9/025 ,  B82Y10/00 ,  H01J1/312 ,  H01J2201/312

    摘要： The electronic device includes a substrate, a first electrode formed over a surface of the substrate, a second electrode located on an opposite side of the first electrode from the substrate so as to face the first electrode, and a functional layer interposed between the first electrode and second electrode and formed by means of anodizing a first polycrystalline semiconductor layer in an electrolysis solution so as to contain a plurality of semiconductor nanocrystals. The electronic device further includes a second polycrystalline semiconductor layer interposed between the first electrode and the functional layer so as to be in close contact with the functional layer. The second polycrystalline semiconductor layer has an anodic oxidization rate in the electrolysis solution lower than that of the first polycrystalline semiconductor layer so as to function as a stop layer for exclusively anodizing the first polycrystalline semiconductor layer.

    摘要翻译： 电子器件包括衬底，形成在衬底的表面上的第一电极，与第一电极相对的第一电极的与衬底相对的第二电极，以便面对第一电极;以及功能层，介于第一电极 和第二电极，并且通过在电解溶液中阳极氧化第一多晶半导体层而形成以包含多个半导体纳米晶体。 电子设备还包括插入在第一电极和功能层之间以与功能层紧密接触的第二多晶半导体层。 第二多晶半导体层在电解液中的阳极氧化速度低于第一多晶半导体层的阳极氧化速率，以作为仅对阳极氧化第一多晶半导体层的停止层。

    ELECTRONIC DEVICE AND METHOD FOR MANUFACTURING SAME
    2.
    发明申请
    ELECTRONIC DEVICE AND METHOD FOR MANUFACTURING SAME 失效
    电子设备及其制造方法

    公开(公告)号：US20130032801A1

    公开(公告)日：2013-02-07

    申请号：US13582611

    申请日：2011-03-31

    申请人： Tsutomu Ichihara ,  Kenji Tsubaki ,  Masao Kubo ,  Nobuyoshi Koshida

    发明人： Tsutomu Ichihara ,  Kenji Tsubaki ,  Masao Kubo ,  Nobuyoshi Koshida

    IPC分类号： H01L33/02 ,  H01L21/20

    CPC分类号： H01J9/025 ,  B82Y10/00 ,  H01J1/312 ,  H01J2201/312

    摘要： The electronic device includes a substrate, a first electrode formed over a surface of the substrate, a second electrode located on an opposite side of the first electrode from the substrate so as to face the first electrode, and a functional layer interposed between the first electrode and second electrode and formed by means of anodizing a first polycrystalline semiconductor layer in an electrolysis solution so as to contain a plurality of semiconductor nanocrystals. The electronic device further includes a second polycrystalline semiconductor layer interposed between the first electrode and the functional layer so as to be in close contact with the functional layer. The second polycrystalline semiconductor layer has an anodic oxidization rate in the electrolysis solution lower than that of the first polycrystalline semiconductor layer so as to function as a stop layer for exclusively anodizing the first polycrystalline semiconductor layer.

    摘要翻译： 电子器件包括衬底，形成在衬底的表面上的第一电极，与第一电极相对的第一电极的与衬底相对的第二电极，以便面对第一电极;以及功能层，介于第一电极 和第二电极，并且通过在电解溶液中阳极氧化第一多晶半导体层而形成以包含多个半导体纳米晶体。 电子设备还包括插入在第一电极和功能层之间以与功能层紧密接触的第二多晶半导体层。 第二多晶半导体层在电解液中的阳极氧化速度低于第一多晶半导体层的阳极氧化速率，以作为仅对阳极氧化第一多晶半导体层的停止层。

    Press-processing method, and press-processing apparatus
    4.
    发明授权
    Press-processing method, and press-processing apparatus 有权
    压制处理方法和压制处理装置

    公开(公告)号：US08850864B2

    公开(公告)日：2014-10-07

    申请号：US12739039

    申请日：2008-11-10

    申请人： Masao Kubo

    发明人： Masao Kubo

    IPC分类号： B21D22/00 ,  B21D24/02 ,  B21D53/88 ,  B21D24/04 ,  B21D22/06 ,  B21D22/26 ,  B21D22/02

    CPC分类号： B21D22/02 ,  B21D22/06 ,  B21D22/26 ,  B21D24/02 ,  B21D24/04 ,  B21D53/88

    摘要： This aims to provide a press process for drawing a plate material into a predetermined shape. This press process performs a first unwrinkling treatment and a second unwrinkling treatment sequentially for unwrinkling the material. Between these first and second unwrinkling treatments, an introduction for deforming the material is made so that the portion of the material on the side to be subjected to the second unwrinkling treatment may be positioned on the side of a drawing direction with respect to the portion subjected to the first unwrinkling treatment. This first unwrinkling treatment is made on such a portion to be unwrinkled in the material as is located on the side of a larger drawing depth for the predetermined shape. On the other hand, the second unwrinkling treatment is made on such a portion to be unwrinkled as is located on the side of a smaller drawing depth.

    摘要翻译： 这旨在提供一种将板材拉制成预定形状的压制方法。 该压制方法按顺序进行第一次打褶处理和第二次打褶处理以使材料变皱。 在这些第一次和第二次打褶处理之间，进行使材料变形的介绍，使得待经受第二次打褶处理的一侧上的材料部分可以相对于所施加的部分位于拉拔方向的一侧 到第一次皱纹治疗。 这种第一次打褶处理是在这样的部分上进行的，该部分在材料上被打皱，就像位于较大的绘制深度一侧为预定形状。 另一方面，在位于更小的绘制深度侧的这样的部分上进行第二次打褶处理。

    Light-emitting device and its manufacturing method
    5.
    发明授权
    Light-emitting device and its manufacturing method 有权
    发光元件及其制造方法

    公开(公告)号：US07923270B2

    公开(公告)日：2011-04-12

    申请号：US12410069

    申请日：2009-03-24

    申请人： Kenichiro Tanaka ,  Masao Kubo

    发明人： Kenichiro Tanaka ,  Masao Kubo

    IPC分类号： H01L21/00

    CPC分类号： H01L33/486 ,  H01L21/568 ,  H01L24/24 ,  H01L24/82 ,  H01L33/0079 ,  H01L33/62 ,  H01L2224/04105 ,  H01L2224/18 ,  H01L2224/32245 ,  H01L2224/73267 ,  H01L2224/82005 ,  H01L2224/92244 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/014 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2933/0066 ,  H01L2924/00

    摘要： In a light-emitting device and its manufacturing method, mounting by batch process with surface-mount technology, high light extraction efficiency, and low manufacturing cost are realized. The light-emitting device comprises semiconductor layers of p-type and n-type nitride semiconductor, semiconductor-surface-electrodes to apply currents into each of the semiconductor layers, an insulating layer which holds the semiconductor layers, and mount-surface-electrodes. The semiconductor layers has a non-deposited area where the other semiconductor layer is not deposited. The insulating layer has VIA which electrically connect the mount-surface-electrodes and the semiconductor-surface-electrodes. In the manufacturing process, firstly, semiconductor layers and semiconductor-surface-electrodes are deposited on the transparent crystal substrate, and by using build-up process, insulating layer and the mount-surface-electrodes are formed, and secondly, VIA are formed, and finally, the transparent crystal substrate is separated to get light-emitting device. Light can be extracted directly and efficiently from the semiconductor layers. With the mount-surface-electrodes, light-emitting device can be mounted by using surface mount technology.

    摘要翻译： 在发光装置及其制造方法中，通过表面贴装技术的分批处理进行安装，实现了高的光提取效率和低的制造成本。 发光装置包括p型和n型氮化物半导体的半导体层，将电流施加到每个半导体层中的半导体表面电极，保持半导体层的绝缘层和安装表面电极。 半导体层具有不沉积另一半导体层的非沉积区域。 绝缘层具有将安装表面电极和半导体表面电极电连接的VIA。 在制造工序中，首先，在透明晶体基板上沉积半导体层和半导体表面电极，通过使用积聚工序，形成绝缘层和安装面电极，其次，形成VIA， 最后分离出透明的晶体基板，得到发光元件。 可以从半导体层直接有效地提取光。 通过安装表面电极，可以通过使用表面贴装技术来安装发光装置。

    Write-once medium recording method and recording apparatus, and playback apparatus
    6.
    发明申请
    Write-once medium recording method and recording apparatus, and playback apparatus 审中-公开
    一次写入介质记录方法和记录装置以及重放装置

    公开(公告)号：US20060083138A1

    公开(公告)日：2006-04-20

    申请号：US11253642

    申请日：2005-10-20

    申请人： Masao Kubo

    发明人： Masao Kubo

    IPC分类号： G11B5/09

    CPC分类号： G11B27/36 ,  G11B20/18 ,  G11B27/034 ,  G11B27/329 ,  G11B2020/10537 ,  G11B2020/1896 ,  G11B2220/216 ,  G11B2220/218 ,  G11B2220/2516 ,  G11B2220/2562 ,  G11B2220/455

    摘要： A write-once medium having a limited storage capacity can be efficiently used. When sequentially forming a plurality of recording zones from a lead-in side to a lead-out side, first, the first digital data including the first digital content and the first management information is recorded in at least one of the plurality of recording zones. Next, the second digital data including the second digital content and the second management information is recorded without closing the zone. After that, the zone is closed.

    摘要翻译： 可以有效地使用具有有限存储容量的一次写入介质。 当从引入侧顺序地形成多个记录区域到引出侧时，首先，将包括第一数字内容和第一管理信息的第一数字数据记录在多个记录区域中的至少一个中。 接下来，记录包括第二数字内容和第二管理信息的第二数字数据，而不关闭该区域。 之后，该区域关闭。

    Processing method of printed wiring board
    7.
    发明授权
    Processing method of printed wiring board 有权
    印刷线路板的加工方法

    公开(公告)号：US06414263B1

    公开(公告)日：2002-07-02

    申请号：US09627308

    申请日：2000-07-27

    申请人： Yuichi Uchida ,  Masao Kubo ,  Kenichiro Tanaka ,  Isamu Miyamoto

    发明人： Yuichi Uchida ,  Masao Kubo ,  Kenichiro Tanaka ,  Isamu Miyamoto

    IPC分类号： B23K2600

    CPC分类号： H05K3/0035 ,  B23K26/03 ,  B23K26/032 ,  B23K26/082 ,  H05K1/0269 ,  H05K2201/0112 ,  H05K2201/0209 ,  H05K2201/0323 ,  H05K2203/0315 ,  H05K2203/163

    摘要： To form a hole for electrically connecting an upper conductor layer 11 of an insulating layer 10 of a printed wiring board 1 and a lower conductor layer 12 of the insulating layer 10 in the insulating layer 10 to expose the lower conductor layer 12 to the hole bottom, when laser processing is executed for making the hole 13 in the insulating layer 10 using the printed wiring board 1 comprising a treatment layer 14 being placed between the lower conductor layer 12 and the insulating layer 10 for emitting an electromagnetic wave having a wavelength different from the wavelength of processing laser during the laser processing, change in a signal emitted from the treatment layer 14 of the printed wiring board 1 is measured to determine the remaining state of the insulating layer 10. The electromagnetic wave emitted in laser processing from the treatment layer 14 placed between the lower conductor layer 12 and the insulating layer 10 rather than the reflection of laser of laser is used, so that the hole 13 piercing the insulating layer can be detected precisely.

    摘要翻译： 为了形成用于将绝缘层10中的印刷电路板1的绝缘层10的上导体层11和绝缘层10的下导体层12电连接的孔，以将下导体层12暴露于孔底 当使用包括处理层14的印刷布线板1在绝缘层10中进行激光加工来进行激光加工时，该处理层14位于下导体层12和绝缘层10之间，用于发射波长不同于 测量激光处理期间的处理激光的波长，从印刷布线板1的处理层14发射的信号的变化，以确定绝缘层10的剩余状态。激光加工中从处理层发射的电磁波 因此，使用放置在下导体层12和绝缘层10之间而不是激光的激光的反射 可以精确地检测穿透绝缘层的孔13。

    Process for producing high-purity silica by reacting crude silica with ammonium fluoride
    9.
    发明授权
    Process for producing high-purity silica by reacting crude silica with ammonium fluoride 失效
    粗二氧化硅与氟化铵反应生产高纯二氧化硅的方法

    公开(公告)号：US5458864A

    公开(公告)日：1995-10-17

    申请号：US68166

    申请日：1993-05-28

    申请人： Makoto Tsugeno ,  Kenji Tanimoto ,  Masao Kubo

    发明人： Makoto Tsugeno ,  Kenji Tanimoto ,  Masao Kubo

    IPC分类号： C01B33/10 ,  C01B33/18 ,  C01B33/12

    CPC分类号： C01B33/103 ,  C01B33/186 ,  C01P2004/61 ,  C01P2006/12 ,  C01P2006/22 ,  C01P2006/80

    摘要： A process for producing a high-purity silica, which comprises the steps of reacting a crude silica with ammonium fluoride, acid ammonium fluoride or a mixture thereof in an aqueous medium to produce ammonium silicofluoride, separating the ammonium silicofluoride from an unreacted silica and impurities by the means of a solid/liquid separation, and reacting the thus-obtained ammonium silicofluoride with ammonia in an aqueous medium. This process is a low cost process, and enables to control properties of silica.

    摘要翻译： 一种制备高纯度二氧化硅的方法，其包括以下步骤：将粗二氧化硅与氟化铵，酸性氟化铵或其混合物在水性介质中反应，生成硅酸铵，将硅酸铵与未反应的二氧化硅和杂质分离 固/液分离的方法，并将如此得到的硅酸铵与氨在水介质中反应。 这个过程是一个低成本的过程，并且能够控制二氧化硅的性质。