摘要:
A determination assist system including a first image generating section for generating a first planar image based on data of a first test index; a second image generating section for generating a second planar image based on data of a second test index; a differentiation section which differentiates the first planar image and the second planar image to generate a first differential image and a second differential image, respectively; a binarization section which binarizes the first differential image to generate a first binary image including a first region which is not less than a first threshold and a second region which is less than the first threshold, and binarizes the second differential image to generate a second binary image including a third region which is not less than a second threshold and a fourth region which is less than the second threshold; and a determination image generating section.
摘要:
An aerogel substrate useful for an electrically conductive substrate, a heat insulating substrate, an optical waveguide substrate, a substrate for a light emitting device or a light emitting device is provided. The aerogel substrate is characterized by comprising a functional layer and an aerogel layer, and an intermediate layer formed between the functional layer and the aerogel layer to allow the functional layer to be formed uniformly thereon. The intermediate layer is formed on at least one surface of the aerogel layer by a gas phase method, by the Langmuir-Blodgett method or by adsorption of an inorganic layered compound; or formed by a hydrophilicizing treatment of at least one surface of the aerogel layer followed by coating and drying an aqueous coating fluid, by an annealing treatment of at least one surface of the aerogel layer, or by a hydrophilicizing treatment of at least one surface of the aerogel layer.
摘要:
In a method of manufacture for a nitride semiconductor light emitting element including: a monocrystalline substrate; and an AlN layer; and a first nitride semiconductor layer of a first electrical conductivity type; and a light emitting layer made of an AlGaN-based material; and a second nitride semiconductor layer of a second electrical conductivity type, a step of forming the AlN layer includes: a first step of supplying an Al source gas and a N source gas into the reactor to generate a group of MN crystal nuclei having Al-polarity to be a part of the AlN layer on the surface of the monocrystalline substrate; and a second step of supplying the Al source gas and the N source gas into the reactor to form the AlN layer, after the first step.
摘要:
An ultraviolet semiconductor light-emitting element comprises a light-emitting layer which is arranged between an n-type nitride semiconductor layer and a p-type nitride semiconductor layer, an n-electrode that is in contact with the n-type nitride semiconductor layer, and a p-electrode that is in contact with the p-type nitride semiconductor layer. The p-type nitride semiconductor layer is provided with a p-type contact layer that has a band gap smaller than that of the light-emitting layer and is in ohmic contact with the p-electrode. A depressed part is formed in a reverse side surface of a surface of the p-type nitride semiconductor layer that faces the light-emitting layer so as to avoid a formation region on which the p-electrode is formed. A reflective film that reflects ultraviolet light emitted from the light-emitting layer is formed on an inner bottom surface of the depressed part.
摘要:
The nitride semiconductor light-emitting element of the invention has a stacked structure of a buffer layer, an n-type nitride semiconductor layer, a light-emitting layer, and a p-type nitride semiconductor layer, on one surface side of a single crystal substrate of a sapphire substrate. A nitride semiconductor multilayer structure as the buffer layer includes: a plurality of island-like nuclei formed of AlN and formed on the one surface of the single crystal substrate; a first nitride semiconductor layer formed of an AlN layer and formed on the one surface side of the single crystal substrate so as to fill gaps between adjacent nuclei and to cover all the nuclei; and a second nitride semiconductor layer formed of an AlN layer and formed on the first nitride semiconductor layer.
摘要:
A nitride semi-conductor light emitting device has a p-type nitride semi-conductor layer 7, an n-type nitride semi-conductor layer 3, and a light emission layer 6 which is interposed between the p-type nitride semi-conductor layer 7 and the n-type nitride semi-conductor layer 3. The light emission layer 6 has a quantum well structure with a barrier layer 6b and a well layer 6a. The barrier layer 6b is formed of AlaGabIn(1-a-b)N (0 0), and contains a first impurity at a concentration of A greater than zero. The well layer 6a is formed of AlcGadIn(1-c-d)N (0 0), and contains a second impurity at a concentration of B equal to or greater than zero. In the nitride semi-conductor light emitting device of the present invention, the concentration of A is larger than that of B, in order that the barrier layer 6b has a concentration of oxygen smaller than that in the well layer 6a.
摘要:
There is provided a substrate for a light emitting device which includes an electrically conductive and transparent film which is in contact with a surface of a low refractive index member of which refractive index is greater than 1 and not greater than 1.30. In a preferable embodiment, the substrate further comprises a transparent member on its surface which is opposed to its surface which has the electrically conductive and transparent film. There is further provided a light emitting device which includes such substrate and a luminous layer, and the luminous layer is located on the electrically conductive and transparent film. With such light emitting device, a ratio of light which is withdrawn outside through the low refractive index member is increased, so that a coupling-out efficiency for surface emission of light withdrawn into the ambient air is increased.
摘要:
A vacuum vapor deposition apparatus includes a vacuum chamber having a plurality of vapor sources and a heater for heating the vapor sources to achieve vacuum vapor deposition on a surface of at least one substrate within the vacuum chamber. At least one of the vapor sources utilizes an organic material. A hot wall, which encloses the vapor sources and a space in which the vapor sources and the substrate confront each other, is heated to a temperature at which the organic material is neither deposited nor decomposed. The organic material is vapor deposited on the surface of the substrate by heating the vapor sources while the vapor sources and the substrate are moved relative to each other.
摘要:
There is provided a process for producing an aerogel which comprises lowering a pH of a water glass solution to obtain a sol, gelling the sol to obtain a hydrogel, replacing water in the gel with an organic solvent, reacting the gel with a hydrophobilizing agent having hydrophobic groups as well as functional groups reactive with silanol groups in liquid phase, followed by supercritically drying; or hydrophobilizing and supercritically drying the resultant gel at the same time. Preferably, the hydrogel is prepared by ion exchanging alkali metals in the water glass solution using an ion exchange resin to obtain a sol which is subjected to suspension polymerization.
摘要:
To improve the detection precision and detection efficiency and further to automatize the detection process, moisture in a honeycomb panel is detected as follows: the honeycomb panel is heated by a lamp; the surface temperature of the heated construction is measured by an infrared radiation thermometer; the measured temperature is displayed to roughly discriminate an abnormal portion (i.e., a portion containing moisture); the honeycomb panel is further heated continuously to detect temperature-change-rates at both abnormal and normal portions (i.e., a portion not containing moisture); and the two temperature-change-rates are compared with each other to discriminate a presence of moisture.