公开(公告)号：US12119307B2

公开(公告)日：2024-10-15

申请号：US17504125

申请日：2021-10-18

申请人： ROCKLEY PHOTONICS LIMITED

发明人： Chia-Te Chou ,  Brett Sawyer ,  David McCann

IPC分类号： H01L23/544 ,  H01L23/00 ,  H01L25/065

CPC分类号： H01L23/544 ,  H01L24/13 ,  H01L24/16 ,  H01L24/17 ,  H01L25/0655 ,  H01L2223/54426 ,  H01L2224/1301 ,  H01L2224/16167 ,  H01L2224/17517 ,  H01L2924/146 ,  H01L2924/15323

摘要： An assembly. In some embodiments, the assembly includes a first semiconductor chip, a substrate, and a first alignment element. The alignment of the first semiconductor chip and the substrate may be determined at least in part by engagement of the first alignment element with a first recessed alignment feature, in a surface of the first semiconductor chip.

公开(公告)号：US12113044B2

公开(公告)日：2024-10-08

申请号：US17676094

申请日：2022-02-18

申请人： Advanced Semiconductor Engineering, Inc.

发明人： Shan-Bo Wang ,  Chin-Li Kao ,  An-Hsuan Hsu

IPC分类号： H01L23/00 ,  H01L25/10 ,  H01L23/498

CPC分类号： H01L24/81 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/17 ,  H01L25/105 ,  H01L23/49816 ,  H01L23/49822 ,  H01L23/49833 ,  H01L2224/05147 ,  H01L2224/11849 ,  H01L2224/13105 ,  H01L2224/13147 ,  H01L2224/13582 ,  H01L2224/13605 ,  H01L2224/13611 ,  H01L2224/13647 ,  H01L2224/14505 ,  H01L2224/16157 ,  H01L2224/16167 ,  H01L2224/16506 ,  H01L2224/17505 ,  H01L2224/81097 ,  H01L2224/81211 ,  H01L2224/81815 ,  H01L2224/81825 ,  H01L2224/81935 ,  H01L2225/1023 ,  H01L2225/1041 ,  H01L2225/1058

摘要： A semiconductor device package and a fabrication method thereof are disclosed. The semiconductor package comprises: a package component having a first mounting surface and a second mounting surface; and a first electronic component having a first conductive pad signal communicatively mounted on the first mounting surface through a first type connector; wherein the first type connector comprises a first solder composition having a lower melting point layer sandwiched between a pair of higher melting point layers, wherein the lower melting point layer is composed of alloys capable of forming a room temperature eutectic.