公开(公告)号：US20040084659A1

公开(公告)日：2004-05-06

申请号：US10661347

申请日：2003-09-12

Applicant: NGK Insulators, Ltd.

Inventor： Osamu Imai ,  Masaru Murase

IPC: C04B035/46 ,  C04B035/48 ,  H01B001/02

CPC classification number: H01B1/08 ,  C03C4/14 ,  C03C8/02

Abstract: The present invention provides a semiconductive glaze product which exhibits low thermal expansion coefficient without adversely affecting other glaze characteristics, and which, when applied to an insulator, attains enhanced mechanical strength of the insulator; a method for producing the semiconductive glaze product; and an insulator coated with the semiconductive glaze product. The semiconductive glaze product contains a glaze composition and a flux, the glaze composition containing a KNaOnullMgOnullCaOnullAl2O3nullSiO2-based base glaze in which the compositional proportions of basic components; i.e., KNaO, MgO, and CaO, as represented by the Seger formula, are 0.1 to 0.4, 0.2 to 0.6, and balance, respectively, and containing a metal oxide composition including tin oxide and antimony oxide, wherein the amount of the flux is 10 parts by weight or less on the basis of 100 parts by weight of the glaze composition.

Abstract translation: 本发明提供一种半导体釉产品，其表现出低热膨胀系数，而不会不利地影响其它釉料特性，并且当应用于绝缘体时，可获得绝缘体的增强的机械强度; 一种半导体釉产品的制造方法; 以及涂覆有半导体釉产品的绝缘体。 半导体釉产品含有釉料组合物和助熔剂，釉料组合物含有基本组分的组成比例的KNaO-MgO-CaO-Al2O3-SiO2系基础釉料; 即，由Seger式表示的KNaO，MgO和CaO分别为0.1〜0.4,0.2〜0.6，余量分别为含有氧化锡和氧化锑的金属氧化物组合物，其中助熔剂的量为 基于100重量份的釉料组合物10重量份或更少。

公开(公告)号：US20030146406A1

公开(公告)日：2003-08-07

申请号：US10325643

申请日：2002-12-19

Applicant: NGK Insulators, Ltd.

Inventor： Hirofumi Yamaguchi ,  Takaaki Koizumi

IPC: C04B035/46 ,  C04B035/48 ,  C04B035/49

CPC classification number: C04B35/468 ,  C04B2235/3213 ,  C04B2235/3251 ,  C04B2235/3281 ,  C04B2235/72 ,  C04B2235/79 ,  H01L41/187

Abstract: A piezoelectric/electrostrictive material is made of a BaTiO3-based porcelain composed mainly of BaTiO3, and a strain (S4000) of transversal direction is 650null10null6 or more in an electric field of 4,000 V/mm. This porcelain has a Curie temperature of 110 to 130null C., and its crystal phase at ambient temperature consists essentially of tetragonal and cubic phases. The piezoelectric/electrostrictive material being composed of this porcelain is superior in strain to conventional products, and can be suitably used in an actuator or a sensor.

Abstract translation: 压电/电致伸缩材料由主要由BaTiO 3组成的BaTiO 3系瓷器制成，在4000V / mm的电场中横向的应变（S4000）为650×10 -6以上。 该陶瓷的居里温度为110〜130℃，其环境温度的结晶相主要由四方晶相组成。 由该陶瓷构成的压电/电致伸缩材料在应变与常规产品相比是优异的，并且可以适用于致动器或传感器。

公开(公告)号：US20030132418A1

公开(公告)日：2003-07-17

申请号：US10067814

申请日：2002-02-08

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Sang Koo Kwon ,  Kang Heon Hur ,  Jong Kuk Hong ,  Dong Hwan Seo

IPC: C04B035/46 ,  C04B035/48 ,  C04B035/49

CPC classification number: C04B35/493 ,  C04B2235/3241 ,  C04B2235/3249 ,  C04B2235/3258 ,  C04B2235/3267 ,  C04B2235/3275 ,  C04B2235/3296 ,  H01L41/1876

Abstract: Disclosed is a piezoelectric ceramic composition comprising a PZT piezoelectric composition, a B-site of which is substituted with a certain material, and chromium oxide, and a piezoelectric device using the piezoelectric ceramic composition. The piezoelectric ceramic composition has good heat resistance and frequency stability, and reduces a leakage current. There is provided the piezoelectric ceramic composition comprising a main component expressed by Pbnull(Co1/2W1/2)xTi1-x-yZrynullO3 (wherein, 0.001nullxnull0.04, and 0.35nullynull0.55), Cr2O3 in an amount of 0.01 to 2 wt %, MnO2 in an amount of 0.1 to 0.5 wt %, and an additive in an amount of 0.01 to 2.0 wt %, based on the total weight of the piezoelectric ceramic composition, in which the additive is selected from the group consisting of CoO, MgO, ZnO, Al2O3, Fe2O3, Sb2O3, SnO2, CeO2, Nb2O5, V2O5 and WO3, and mixtures thereof. The piezoelectric ceramic composition satisfies piezoelectric properties such as kp and Qm needed for a piezoelectric material, and is 320null C. or higher in phase transition temperature, null30 ppm/null C. in TCF, and 0.1 % or less in oscillation frequency change after reflow; and the piezoelectric ceramic composition also has good piezoelectric properties such that the leakage current is reduced.

Abstract translation: 本发明公开了一种压电陶瓷组合物和使用该压电陶瓷组合物的压电装置，其中PZT压电组合物的B部位用某种材料代替，氧化铬。 压电陶瓷组合物具有良好的耐热性和频率稳定性，并且减小了漏电流。 提供了包含由Pb [（Co1 / 2W1 / 2）xTi1-x-yZry] O3（其中0.001≤x≤0.04,0.35≤y≤0.55）表示的主成分的压电陶瓷组合物， 0.01〜2重量％的Cr 2 O 3，0.1〜0.5重量％的MnO 2，0.01〜2.0重量％的添加剂，以压电陶瓷组合物的总重量计，其中添加剂 选自CoO，MgO，ZnO，Al2O3，Fe2O3，Sb2O3，SnO2，CeO2，Nb2O5，V2O5和WO3，以及它们的混合物。 压电陶瓷组合物满足压电材料所需的压电特性如kp和Qm，在TCF中相变温度为320℃或更高，±30ppm /℃，振荡频率变化为0.1％以下 回流后 并且压电陶瓷组合物也具有良好的压电性能，使得泄漏电流降低。

公开(公告)号：US20020165080A1

公开(公告)日：2002-11-07

申请号：US09768690

申请日：2001-01-24

Inventor： Louise C. Sengupta ,  Xubai Zhang ,  Luna H. Chiu

IPC: C04B035/46 ,  C04B035/48 ,  C04B035/49

CPC classification number: C04B35/495 ,  C04B35/462

Abstract: Electronically tunable dielectric materials having favorable properties are disclosed. The electronically tunable materials include an electronically tunable dielectric phase such as barium strontium titanate in combination with at least two additional metal oxide phases. The additional metal oxide phases may include, for example, oxides of Mg, Si, Ca, Zr, Ti and Al. The electronically tunable materials may be provided in bulk, thin film and thick film forms for use in devices such as phased array antennas, tunable filters and the like. The materials are useful in many applications, including the area of radio frequency engineering and design.

Abstract translation: 公开了具有良好性能的电可调电介质材料。 电子可调谐材料包括电子可调电介质相，例如钛酸锶钡与至少两个另外的金属氧化物相结合。 附加的金属氧化物相可以包括例如Mg，Si，Ca，Zr，Ti和Al的氧化物。 电子可调谐材料可以以体积，薄膜和厚膜形式提供，用于诸如相控阵天线，可调谐滤波器等的装置。 这些材料在许多应用中是有用的，包括射频工程和设计领域。

公开(公告)号：US20010016552A1

公开(公告)日：2001-08-23

申请号：US09201333

申请日：1998-11-30

Inventor： NAOYUKI GOTO ,  KOUSUKE NAKAJIMA ,  JUNKO ISHIOKA

IPC: C04B035/46 ,  C04B035/49

CPC classification number: G11B5/7315 ,  C03C10/0045 ,  C03C10/0054 ,  C03C10/0081 ,  G11B5/8404 ,  Y10S428/90 ,  Y10T428/24355

Abstract: A high rigidity glass-ceramic substrate for a magnetic information storage medium has a ratio of Young's modulus to specific gravity within a range from 37 to 63 and comprises Al2O3 within a range from 10% to less than 20%. A predominant crystal phase of the glass-ceramic substrate consists of one or more crystals selected from the group consisting of null-quartz, null-quartz solid solution, enstatite, enstatite solid solution, forsterite and forsterite solid solution.

Abstract translation: 用于磁信息存储介质的高刚性玻璃陶瓷基片具有在37至63的范围内的杨氏模量与比重的比率，并且包括在10％至小于20％的范围内的Al 2 O 3。 玻璃陶瓷衬底的主要晶相由一种或多种选自β-石英，β-石英固溶体，顽辉石，顽辉石固溶体，镁橄榄石和镁橄榄石固溶体的晶体组成。

公开(公告)号：US20040089854A1

公开(公告)日：2004-05-13

申请号：US10606966

申请日：2003-06-27

Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

Inventor： Li-Mei Chen ,  Chao-Jen Wang ,  Chuan-Ya Hung

IPC: C04B035/46

CPC classification number: H01L21/02194 ,  C04B35/016 ,  C04B35/42 ,  C04B35/4504 ,  C04B35/453 ,  C04B35/462 ,  C04B35/48 ,  C04B35/495 ,  C04B35/50 ,  C04B2235/3206 ,  C04B2235/3224 ,  C04B2235/3225 ,  C04B2235/3227 ,  C04B2235/3229 ,  C04B2235/3232 ,  C04B2235/3239 ,  C04B2235/3241 ,  C04B2235/3244 ,  C04B2235/3256 ,  C04B2235/3262 ,  C04B2235/3267 ,  C04B2235/3281 ,  C04B2235/3284 ,  C04B2235/767 ,  C23C14/08 ,  H01L21/02266 ,  H01L21/02282 ,  H01L21/31691

Abstract: A dielectric material composition including a metal oxide represented by a general formula, Y1-xM1xMn1-yM2yOm. M1 is Y, Ho, Er, Yb, Tm, or Lu. M2 is Ti, Zr, V, Mo, Mg, Cu, or Zn. X is a number of 0 to 1. Y is a number of 0 to 1. The metal oxide is of high dielectric constant and has the properties of ferroelectricity, piezoelectricity, and pyroelectricity.

Abstract translation: 一种介电材料组合物，其包含由通式Y1-xM 1 xMn 1-y M y y m表示的金属氧化物。 M 1是Y，Ho，Er，Yb，Tm或Lu。 M 2是Ti，Zr，V，Mo，Mg，Cu或Zn。 X为0〜1的数.Y为0〜1的数。金属氧化物的介电常数高，具有铁电性，压电性，热电性等特性。

公开(公告)号：US20040089853A1

公开(公告)日：2004-05-13

申请号：US10606859

申请日：2003-06-27

Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

Inventor： Li-Mei Chen ,  Chao-Jen Wang ,  Chien-Hsien Yu ,  Jen-Po Lin

IPC: H01B003/24 ,  C04B035/46

CPC classification number: H01L21/02197 ,  C04B35/4682 ,  C04B35/49 ,  C04B2235/3213 ,  C04B2235/3215 ,  C04B2235/3227 ,  C04B2235/3251 ,  C23C14/088 ,  H01C7/008 ,  H01C17/06533 ,  H01G4/1245 ,  H01G4/1254 ,  H01L21/02266 ,  H01L21/02282 ,  H01L21/31691

Abstract: A new dielectric material composition with high dielectric constant and low dielectric loss, which includes a quaternary metallic oxide having a pervoskite structure and represented by a general formula, Ba1nullxM1xTi1nullyM2yOm. It is suitable for Gbit memory devices, embedded capacitance devices in multilayered structures, and modulable capacitors for high frequency devices.

Abstract translation: 一种具有高介电常数和低介电损耗的新型介电材料组合物，其包括具有渗透性结构并由通式Ba 1-x M 1 x Ti 1-y M 2 y O m表示的季金属氧化物。 适用于Gbit存储器件，多层结构中的嵌入式电容器件和高频器件的可调电容器。

公开(公告)号：US20030008764A1

公开(公告)日：2003-01-09

申请号：US09960219

申请日：2001-09-21

Inventor： You Wang ,  Tongsan D. Xiao ,  Donald M. Wang

IPC: C04B035/50 ,  C04B035/10 ,  C04B035/12 ,  C04B035/46

CPC classification number: C04B35/117 ,  B82Y30/00 ,  C04B35/12 ,  C04B35/6264 ,  C04B35/62645 ,  C04B35/62655 ,  C04B2235/3217 ,  C04B2235/3229 ,  C04B2235/3232 ,  C04B2235/3241 ,  C04B2235/3246 ,  C04B2235/528 ,  C04B2235/5445 ,  C04B2235/5454 ,  C04B2235/549 ,  C23C4/11 ,  C23C30/00 ,  Y02T50/67

Abstract: A microstructured or nanostructured multi-component ceramic comprises (a) a major ceramic phase comprising a ceramic oxide composite; (b) a ceramic oxide additive; and (c) a rare earth ceramic oxide additive, wherein the total of the additives (b) and (c) comprise from about 0.1 weight percent to less than 50 weight percent based on the total weight the multi-component ceramic composite. In another embodiment, a microstructured or nanostructured multi-component ceramic comprises (a) a major ceramic oxide phase comprising a ceramic oxide composite; and either (b) a ceramic oxide additive or (c) a rare earth ceramic oxide additive, wherein amount of the additive (b) or (c) comprises from about 0.1 weight percent to less than 50 weight percent based on the total weight the multi-component ceramic composite. Such ceramics are useful as bulk materials or as feedstocks for thermal spray.

Abstract translation: 微结构或纳米结构的多组分陶瓷包括（a）包含陶瓷氧化物复合材料的主要陶瓷相; （b）陶瓷氧化物添加剂; 和（c）稀土类陶瓷氧化物添加剂，其中所述添加剂（b）和（c）的总量占所述多组分陶瓷复合材料的总重量的约0.1重量％至小于50重量％。 在另一个实施方案中，微结构或纳米结构的多组分陶瓷包括（a）包含陶瓷氧化物复合材料的主要陶瓷氧化物相; 和（b）陶瓷氧化物添加剂或（c）稀土陶瓷氧化物添加剂，其中添加剂（b）或（c）的量占总重量的约0.1重量％至小于50重量％ 多组分陶瓷复合材料。 这种陶瓷作为散装材料或用于热喷涂的原料是有用的。

公开(公告)号：US20020177326A1

公开(公告)日：2002-11-28

申请号：US10101328

申请日：2002-03-19

Inventor： Mareike Katharine Klee ,  Rainer Kiewitt ,  Mike Ju ,  Wilfried Germer ,  Hans-Wolfgang Brand

IPC: C04B035/46

CPC classification number: H01L28/55 ,  H01L21/31691 ,  H01L27/0629 ,  H01L27/0652 ,  H01L27/0676

Abstract: The invention relates to an electronic device provided with an electronic component which comprises an integrated circuit arrangement which has a semiconducting substrate, active components, and passive components such as capacitors with high and with low capacitance values and/or resistors. The invention further relates to a transmitter, a receiver, an electronic component, a peripheral circuit, a power supply circuit, a filter module, and an integrated circuit arrangement.

Abstract translation: 本发明涉及一种具有电子部件的电子设备，该电子部件包括集成电路装置，该集成电路装置具有半导体基板，有源部件和无源部件，例如具有高和低电容值和/或电阻器的电容器。 本发明还涉及发射机，接收机，电子部件，外围电路，电源电路，滤波器模块和集成电路装置。

公开(公告)号：US20020072463A1

公开(公告)日：2002-06-13

申请号：US10011380

申请日：2001-10-22

Applicant: UBE INDUSTRIES, LTD.

Inventor： Kazuki Iwashita ,  Koichi Fukuda

IPC: C04B035/478 ,  C04B035/46 ,  C04B035/49 ,  C04B035/453

CPC classification number: C04B35/478

Abstract: A dielectric ceramic composition for high frequency wave having a composition comprising Al, Zr, Ti, Sn and O as a basic composition and represented by compositional formula: aAl2O3nullbZrO2nullcTiO2nulldSnO2 (in which 0.4068

Abstract translation: 一种用于高频波的介电陶瓷组合物，其组成包括作为碱性组成的Al，Zr，Ti，Sn和O，并由组成式表示： aAl 2 O 3 -bZrO 2 - （其中0.4068