公开(公告)号：US06298077B1

公开(公告)日：2001-10-02

申请号：US09250900

申请日：1999-02-16

申请人： Xiauguang He

发明人： Xiauguang He

IPC分类号： H01S5323

CPC分类号： B82Y20/00 ,  H01S5/20 ,  H01S5/2004 ,  H01S5/2009 ,  H01S5/34313 ,  H01S5/3436

摘要： A GaInAsP/AR GaInP laser diode is provided with an AlGaAs type II carrier blocking layer in the waveguide of the diode. The resulting diode exhibits a relatively low threshold current, an increased slope efficiency and characteristic T0 and T1, for the diodes are less limited by carrier leakage.

摘要翻译： GaInAsP / ARGaInP激光二极管在二极管的波导中设置有AlGaAs II型载流子阻挡层。 所得到的二极管表现出相对较低的阈值电流，增加的斜率效率和二极管的特性T0和T1较少受载流子泄漏的限制。

公开(公告)号：US06359919B1

公开(公告)日：2002-03-19

申请号：US09642646

申请日：2000-08-22

申请人： Masayuki Ishikawa ,  Masahiro Yamamoto ,  Shinya Nunoue ,  Johji Nishio ,  Genichi Hatakoshi ,  Hidetoshi Fujimoto

发明人： Masayuki Ishikawa ,  Masahiro Yamamoto ,  Shinya Nunoue ,  Johji Nishio ,  Genichi Hatakoshi ,  Hidetoshi Fujimoto

IPC分类号： H01S5323

CPC分类号： B82Y20/00 ,  H01S5/0213 ,  H01S5/0421 ,  H01S5/0422 ,  H01S5/0425 ,  H01S5/2063 ,  H01S5/2202 ,  H01S5/2205 ,  H01S5/2216 ,  H01S5/222 ,  H01S5/2224 ,  H01S5/2227 ,  H01S5/2231 ,  H01S5/2232 ,  H01S5/3063 ,  H01S5/3211 ,  H01S5/3213 ,  H01S5/32341 ,  H01S5/34333 ,  H01S2304/04

摘要： A gallium nitride-based compound semiconductor laser has a double-heterojunction structure, in which an active layer is sandwiched between cladding layers, on a sapphire substrate. A GaN current blocking layer having a striped opening portion is formed on the p-cladding layer. A p-GaN buried layer and a contact layer through which a current is injected into the opening portion of the current blocking layer and which are larger in area than the opening portion are formed. The active layer has a multiple quantum well structure constituted by a cyclic structure formed by cyclically stacking two types of InGaAlN layers which have different band gaps and are 10 nm or less thick.

摘要翻译： 氮化镓系化合物半导体激光器在蓝宝石衬底上具有双层异质结结构，其中有源层夹在包层之间。 在p-包层上形成具有条纹开口部分的GaN电流阻挡层。 形成p-GaN掩埋层和电流注入到电流阻挡层的开口部分并且面积大于开口部分的接触层。 有源层具有通过循环堆叠具有不同带隙并且为10nm或更小厚度的两种类型的InGaAlN层而形成的循环结构的多量子阱结构。

公开(公告)号：US06751244B2

公开(公告)日：2004-06-15

申请号：US10363190

申请日：2003-03-04

申请人： Jérôme Faist ,  Mattias Beck ,  Antoine Muller

发明人： Jérôme Faist ,  Mattias Beck ,  Antoine Muller

IPC分类号： H01S5323

CPC分类号： B82Y20/00 ,  H01S5/12 ,  H01S5/3402

摘要： A quantum cascade laser comprising two electrodes (10, 18) for applying an electric control field and a waveguide placed between the two electrodes and which comprises: a gain region (14) consisting of several layers (20) which each comprise alternating strata (22) of a first type each defining a quantum barrier and strata (24) of a second type each defining a quantum well, and two optical confinement layers (12, 16) placed on each side of the gain region (14). According to the invention, each layer (20) of the gain region (14) is arranged so that the active region has three subbands, the potential differences between them being such that the transition of an electron between the two furthermost emits an energy (EGH, EHJ) corresponding to that needed for the emission of two optical phonons.

摘要翻译： 一种量子级联激光器，包括用于施加电控制场的两个电极（10,18）和放置在两个电极之间的波导，其包括：由数个层（20）组成的增益区域（14），每个层包括交替层 ），每个限定量子势垒和第二类型的层（24），每个定义量子阱，以及放置在增益区域（14）的每一侧上的两个光限制层（12,16）。根据本发明 增益区域（14）的每个层（20）被布置成使得有源区域具有三个子带，它们之间的电位差使得最远两端之间的电子的跃迁发射相应的能量（EGH，EHJ） 到发射两个光学声子所需的那个。

公开(公告)号：US06240114B1

公开(公告)日：2001-05-29

申请号：US09130567

申请日：1998-08-07

申请人： Klaus Alexander Anselm ,  James Nelson Baillargeon ,  Alfred Yi Cho

发明人： Klaus Alexander Anselm ,  James Nelson Baillargeon ,  Alfred Yi Cho

IPC分类号： H01S5323

CPC分类号： B82Y20/00 ,  H01S5/3072 ,  H01S5/34 ,  H01S5/3407

摘要： An MQW laser comprises an active region in which a multiplicity of barriers each includes a doped barrier layer separated from its adjacent quantum well layers by undoped barrier layers. In a preferred embodiment, each barrier of an InGaAsP/InP SCH MQW laser includes a p-type (e.g., Be, Mg or C) delta-doped InGaAsP barrier layer sandwiched between a pair of undoped InGaAsP barrier layers. With suitable doping concentration and thickness of the delta-doped barrier layer, we have demonstrated MQW lasers with To as high as 82 K.

摘要翻译： MQW激光器包括有源区，其中多个势垒各自包括通过未掺杂势垒层与其相邻量子阱层分离的掺杂阻挡层。 在优选实施例中，InGaAsP / InP SCH MQW激光器的每个势垒包括夹在一对未掺杂的InGaAsP势垒层之间的p型（例如，Be，Mg或C）的Δ掺杂的InGaAsP势垒层。 具有合适的掺杂浓度和掺杂三角形势垒层的厚度，我们已经展示了高达82K的MQW激光器。