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    Nitride compound semiconductor light emitting device
    7.
    发明授权
    Nitride compound semiconductor light emitting device 失效
    氮化物半导体发光元件

    公开(公告)号：US06242761B1

    公开(公告)日：2001-06-05

    申请号：US09026941

    申请日：1998-02-20

    申请人： Hidetoshi Fujimoto ,  John Rennie ,  Masahiro Yamamoto ,  Masayuki Ishikawa ,  Shinya Nunoue ,  Lisa Sugiura

    发明人： Hidetoshi Fujimoto ,  John Rennie ,  Masahiro Yamamoto ,  Masayuki Ishikawa ,  Shinya Nunoue ,  Lisa Sugiura

    IPC分类号： H01L2972

    CPC分类号： H01L33/145 ,  H01L33/32 ,  H01S5/2205 ,  H01S5/2206 ,  H01S5/2214 ,  H01S5/2226 ,  H01S5/2231 ,  H01S5/32341

    摘要： In order to remove the problems in conventional nitride compound semiconductor laser structures, namely, high operation voltage caused by a high resistance in a p-type layer and a high contact resistance of an electrode, damage to the crystal caused by dry etching, insufficient current injection, and the need for a high current density, a nitride compound semiconductor light emitting device has current blocking layers made of n-type B(1−x−y−z)InxAlyGazN (0≦x≦1, 0≦y≦1, 0≦z≦1) single crystal containing an oxide of a predetermined metal, carbon and impurities exhibiting p-type and n-type conductivity, or i-type B(1−x−y−z)InxAlyGazN (0≦x≦1, 0≦y≦1, 0≦z≦1) single crystal in which carriers are inactivated by hydrogen or oxygen to realize an internal current blocking structure without the need for dry etching. By applying a reverse bias voltage, the semiconductor can be activated only along a current path, and the remainder region is utilized as a current blocking layer. When the n-side electrode has a unique three-layered structure, a reduction in contact resistance and good wire bonding are promised.

    摘要翻译： 为了消除常规氮化物化合物半导体激光器结构中的问题，即由p型层中的高电阻引起的高操作电压和电极的高接触电阻，由干蚀刻引起的晶体损坏，电流不足 注入，并且需要高电流密度，氮化物化合物半导体发光器件具有由n型B（1-xyz）In x AlyGazN（0≤x≤1,0<= y <= 1）形成的电流阻挡层 ，0 <= z <= 1）含有预定金属的氧化物的单晶，碳和表现出p型和n型导电性的杂质，或i型B（1-xyz）In x AlyGazN（0 <= x < 1，0 <= y <= 1，0 <= z <= 1）其中载体被氢或氧灭活以实现内部电流阻挡结构而不需要干法蚀刻的单晶。 通过施加反向偏置电压，半导体只能沿着电流路径被激活，并且剩余区域被用作电流阻挡层。 当n侧电极具有独特的三层结构时，承诺了接触电阻的降低和良好的引线接合。

    Semiconductor laser and method of fabricating same
    10.
    发明授权
    Semiconductor laser and method of fabricating same 有权
    半导体激光器及其制造方法

    公开(公告)号：US06400742B1

    公开(公告)日：2002-06-04

    申请号：US09498372

    申请日：2000-02-04

    申请人： Genichi Hatakoshi ,  Masaaki Onomura ,  John Rennie ,  Masayuki Ishikawa ,  Shinya Nunoue ,  Mariko Suzuki

    发明人： Genichi Hatakoshi ,  Masaaki Onomura ,  John Rennie ,  Masayuki Ishikawa ,  Shinya Nunoue ,  Mariko Suzuki

    IPC分类号： H01S500

    CPC分类号： H01S5/32341 ,  H01S5/0421 ,  H01S5/0425 ,  H01S5/22 ,  H01S5/2219 ,  H01S5/2231 ,  H01S5/4043 ,  H01S5/405 ,  H01S5/4087 ,  H01S2301/166

    摘要： A semiconductor laser is disclosed, which realizes a continuous oscillation in a fundamental transverse mode at a low operating voltage by a transverse mode control. This semiconductor laser is fabricated by forming successively the following layers on a sapphire substrate 10 in the order an n-type GaN contact layer, an n-type GaAlN cladding layer 13, an MQW active layer 16, a p-type GaAlN cladding layer 19, wherein the laser comprises a double heterostructure including a ridge in the shape of a stripe formed in the cladding layer 19 and a light confining layer 20 formed in a region except the ridge portion of the cladding layer 19 on the double heterostructure, wherein a refractive index of the light confining layer 20 is larger than that of a p-type GaAlN cladding layer.

    摘要翻译： 公开了一种半导体激光器，其通过横向模式控制在低工作电压下实现基本横向模式的连续振荡。 该半导体激光器是按照n型GaN接触层，n型GaAlN包覆层13，MQW有源层16，p型GaAlN覆盖层19的顺序依次形成蓝宝石衬底10上的以下层来制造的 其中激光器包括双重异质结构，其包括形成在包覆层19中的条纹形状的脊和形成在双重异质结构上的包层19的脊部之外的区域中的光限制层20，其中折射率 光限制层20的折射率大于p型GaAlN包覆层的折射率。