公开(公告)号：US20240114794A1

公开(公告)日：2024-04-04

申请号：US18484311

申请日：2023-10-10

申请人： SKYWORKS SOLUTIONS, INC.

发明人： Hardik Bhupendra MODI ,  Adarsh Karan JAISWAL ,  Anil K. AGARWAL ,  Engin Ibrahim PEHLIVANOGLU

IPC分类号： H10N30/071 ,  H01L23/552 ,  H01L23/66 ,  H03F3/195 ,  H03H9/02 ,  H03H9/64

CPC分类号： H10N30/071 ,  H01L23/552 ,  H01L23/66 ,  H03F3/195 ,  H03H9/02976 ,  H03H9/6406 ,  H01L2223/6611 ,  H01L2223/6644 ,  H01L2223/6677 ,  H01L2224/32145 ,  H01L2224/48091 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2225/0651 ,  H01L2225/06517 ,  H01L2225/06537 ,  H01L2924/15313 ,  H01L2924/19042 ,  H01L2924/19105 ,  H01L2924/3025 ,  H03F2200/294

摘要： Devices and methods related to stack assembly. In some embodiments, a radio-frequency (RF) module can include a packaging substrate configured to receive a plurality of components, and an electro-acoustic device mounted on the packaging substrate. The RF module can further include a die having an integrated circuit and mounted over the electro-acoustic device to form a stack assembly. The electro-acoustic device can be, for example, a filter device such as a surface acoustic wave filter. The die can be, for example an amplifier die such as a low-noise amplifier implemented on a silicon die.

公开(公告)号：US20240029469A1

公开(公告)日：2024-01-25

申请号：US18376401

申请日：2023-10-03

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Bongjae RHEE ,  Suna KIM

IPC分类号： G06V40/13 ,  H10N30/05 ,  H10N30/03 ,  H10N30/071 ,  H10N30/88 ,  H10N30/30 ,  G06F3/01

CPC分类号： G06V40/1306 ,  H10N30/05 ,  H10N30/03 ,  H10N30/071 ,  H10N30/88 ,  H10N30/302 ,  G06F3/016

摘要： An electronic apparatus according to an embodiment comprises: a housing; and a piezoelectric module including a first region that detects biometric information by using ultrasonic waves and a second region that provides haptic feedback, wherein the piezoelectric module includes: a first electrode layer and a second electrode layer facing each other; and a piezoelectric layer which is positioned between the first electrode layer and the second electrode layer, at least one portion of the piezoelectric layer positioned in the first region of the piezoelectric module may vibrate in a first frequency band to emit the ultrasonic waves, and at least one portion of the piezoelectric layer positioned in the second region of the piezoelectric module may vibrate in a second frequency band lower than the first frequency hand.

公开(公告)号：US20240057482A1

公开(公告)日：2024-02-15

申请号：US18489586

申请日：2023-10-18

申请人： Flexim Flexible Industriemesstechnik GmbH

发明人： Oleg Shapovalov ,  Thomas Heckel ,  Rainer Boehm ,  Stefan Göbbels ,  Bernhard Funck

IPC分类号： H10N30/05 ,  H10N30/071 ,  H10N30/093 ,  H04R31/00

CPC分类号： H10N30/05 ,  H10N30/071 ,  H10N30/093 ,  H04R31/00 ,  H04R17/00

摘要： A joining method is for producing a sound transducer system. The method includes: providing a piezoelectric material and a plurality of components, each of the components being characterized by a solidus temperature; arranging the piezoelectric material and the plurality of components in the form of a stack, so that adjacent to a front face of the piezoelectric material there is a front stack part and adjacent to a rear face of the piezoelectric material there is a rear stack part; and consolidating the stack by the introduction of heat and pressure for a predetermined period of time, none of the solidus temperatures of the plurality of components being exceeded during the consolidation; and, during the consolidation, the piezoelectric material being directly acoustically coupled to an immediately adjacent component of the front and/or rear stack part.

公开(公告)号：US20230371388A1

公开(公告)日：2023-11-16

申请号：US18360894

申请日：2023-07-28

申请人： Taiwan Semiconductor Manufacturing Company Limited

发明人： Yen-Chieh HUANG ,  Hai-Ching CHEN

IPC分类号： H10N30/30 ,  H01L29/417 ,  H01L29/786 ,  H10N30/50 ,  H10N30/071 ,  H10N30/098 ,  H10N30/87

CPC分类号： H10N30/302 ,  H01L29/41733 ,  H01L29/78696 ,  H10N30/50 ,  H10N30/071 ,  H10N30/098 ,  H10N30/871 ,  G01L1/16

摘要： A thin-film transistor includes a flexible substrate, an amorphous semiconductor channel layer on the flexible substrate, an organic material piezoelectric stress gate layer adjacent to the amorphous semiconductor channel layer, a gate electrode adjacent to the organic material piezoelectric stress gate layer, and a source electrode and drain electrode coupled to the organic material piezoelectric stress gate layer.

公开(公告)号：US11785853B2

公开(公告)日：2023-10-10

申请号：US17346292

申请日：2021-06-13

申请人： SKYWORKS SOLUTIONS, INC.

发明人： Hardik Bhupendra Modi ,  Adarsh Karan Jaiswal ,  Anil K. Agarwal ,  Engin Ibrahim Pehlivanoglu

IPC分类号： H10N30/071 ,  H01L23/66 ,  H03H9/64 ,  H01L23/552 ,  H03F3/195 ,  H03H9/02

CPC分类号： H10N30/071 ,  H01L23/552 ,  H01L23/66 ,  H03F3/195 ,  H03H9/02976 ,  H03H9/6406 ,  H01L2223/6611 ,  H01L2223/6644 ,  H01L2223/6677 ,  H01L2224/32145 ,  H01L2224/48091 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2225/0651 ,  H01L2225/06517 ,  H01L2225/06537 ,  H01L2924/15313 ,  H01L2924/19042 ,  H01L2924/19105 ,  H01L2924/3025 ,  H03F2200/294 ,  H01L2224/48091 ,  H01L2924/00014

摘要： Stack assembly for radio-frequency applications. In some embodiments, a radio-frequency (RF) module can include a packaging substrate configured to receive a plurality of components, and an electro-acoustic device mounted on the packaging substrate. The RF module can further include a die having an integrated circuit and mounted over the electro-acoustic device to form a stack assembly. The electro-acoustic device can be, for example, a filter device such as a surface acoustic wave filter. The die can be, for example an amplifier die such as a low-noise amplifier implemented on a silicon die.

公开(公告)号：US11778914B2

公开(公告)日：2023-10-03

申请号：US17237176

申请日：2021-04-22

申请人： Taiwan Semiconductor Manufacturing Company Limited

发明人： Rainer Yen-Chieh Huang ,  Hai-Ching Chen

IPC分类号： H10N30/30 ,  H01L29/417 ,  H10N30/071 ,  H10N30/87 ,  H01L29/786 ,  H10N30/50 ,  H10N30/098 ,  G01L1/16

CPC分类号： H10N30/302 ,  H01L29/41733 ,  H01L29/78696 ,  H10N30/071 ,  H10N30/098 ,  H10N30/50 ,  H10N30/871 ,  G01L1/16

摘要： A thin-film transistor may include an amorphous semiconductor channel layer, an organic material piezoelectric stress gate layer formed adjacent to the amorphous semiconductor channel layer, a source electrode coupled to the organic material piezoelectric stress gate layer, a drain electrode coupled to the organic material piezoelectric stress gate layer and a gate electrode coupled to the organic material piezoelectric stress gate layer. In some embodiments, the amorphous semiconductor channel layer may be amorphous indium gallium zinc oxide. In some embodiments, the organic material piezoelectric stress gate layer may be organic polyvinylidene fluoride. In some embodiments, the amorphous semiconductor channel layer may be formed on a flexible substrate.

公开(公告)号：US11758816B2

公开(公告)日：2023-09-12

申请号：US16445279

申请日：2019-06-19

申请人： Commissariat A L'Energie Atomique et aux Energies Alternatives

发明人： Gwenael Le Rhun

IPC分类号： H10N30/072 ,  H10N30/073 ,  H10N30/079 ,  H10N30/87 ,  H10N30/00 ,  H10N30/071 ,  H10N30/853

CPC分类号： H10N30/072 ,  H10N30/071 ,  H10N30/073 ,  H10N30/079 ,  H10N30/10513 ,  H10N30/877 ,  H10N30/8554

摘要： A method for producing a piezoelectric transducer device is provided, including a membrane including at least one silicon and/or silicon nitride layer; a piezoelectric layer including at least one piezoelectric material with crystalline perovskite structure and arranged on the membrane; first and second electrodes electrically in contact with the piezoelectric layer; and in which the piezoelectric layer is in direct contact with the silicon and/or silicon nitride layer, or in which the piezoelectric layer is in contact with the silicon and/or silicon nitride layer solely through one or more metal layers.

公开(公告)号：US20240313742A1

公开(公告)日：2024-09-19

申请号：US18600043

申请日：2024-03-08

申请人： Sll Crystal Technology Inc.

发明人： Masanori KATO ,  Naoya ICHIMURA

IPC分类号： H03H9/21 ,  H10N30/02 ,  H10N30/071 ,  H10N30/20

CPC分类号： H03H9/21 ,  H10N30/02 ,  H10N30/071 ,  H10N30/20

摘要： A decrease in vibration efficiency due to size reduction of a tuning-fork type piezoelectric vibrating piece is prevented. A piezoelectric vibrating piece includes a base portion, and a pair of vibrating arm portions extending in parallel from the base portion. Each of the vibrating arm portions includes an arm portion extending from the base portion, and a head portion connected to a distal end of the arm portion and having a width larger than that of the arm portion. The piezoelectric vibrating piece satisfies the following relation: 0.13×1012≤Vh(Lh2+Wh2)≤0.39×1012, where Lh [μm] is a length of the head portion, Wh [μm] is a width of the head portion, and Vh [μm3] is a volume of the head portion.

公开(公告)号：US20240260475A1

公开(公告)日：2024-08-01

申请号：US18523351

申请日：2023-11-29

申请人： LG Display Co., Ltd.

发明人： YuSeon KHO ,  Wansoo LEE ,  Chiwan KIM ,  Sung-Eui SHIN ,  Minji KIM ,  Sungwook KO ,  Saewon KANG

IPC分类号： H10N30/20 ,  H10N30/03 ,  H10N30/071 ,  H10N30/098 ,  H10N30/87

CPC分类号： H10N30/20 ,  H10N30/03 ,  H10N30/071 ,  H10N30/098 ,  H10N30/875

摘要： Aspects of the present disclosure is directed to a vibration apparatus and an apparatus including the same, having directivity. In one example, a vibration apparatus includes a vibration part; a first electrode at a first surface of the vibration part; and a second electrode at a second surface different from the first surface of the vibration part, wherein the vibration part includes a piezoelectric portion and a supporting portion connected to the piezoelectric portion, and wherein a height of the supporting portion differs from a height of the piezoelectric portion.

公开(公告)号：US20230266183A1

公开(公告)日：2023-08-24

申请号：US18107642

申请日：2023-02-09

申请人： Qorvo US, Inc.

发明人： Julius Minglin Tsai ,  Daniel Krstyen Benjamin ,  Yenhao Chen ,  Tom Kwa

IPC分类号： G01L1/16 ,  H10N30/071 ,  H10N30/20 ,  H10N30/87

CPC分类号： G01L1/162 ,  H10N30/071 ,  H10N30/2047 ,  H10N30/875

摘要： A hybrid sensor includes a piezoresistive element for sensing an applied force, a piezoelectric micromachined ultrasonic transducer (PMUT) for sensing the presence of an object within a threshold distance of the hybrid sensor, and a substrate onto which both the piezoresistive element and the PMUT are disposed.