公开(公告)号：US20240343976A1

公开(公告)日：2024-10-17

申请号：US18299906

申请日：2023-04-13

Applicant: City University of Hong Kong

Inventor： Feng Wang ,  Yanze Wang

IPC: C09K11/88 ,  C01B19/04 ,  C01G9/08 ,  C09K11/58

CPC classification number: C09K11/883 ,  C01B19/04 ,  C01G9/08 ,  C09K11/584 ,  C01P2002/54 ,  C01P2002/72 ,  C01P2002/76 ,  C01P2002/85 ,  C01P2004/03 ,  C01P2004/61

Abstract: A method of forming an alkaline-earth metal selenide and/or sulfide compound is disclosed as including reacting a carbonate of an alkaline-earth metal with zinc selenide (ZnSe) and/or zinc sulfide (ZnS) in a mixture atmosphere of hydrogen gas (H2) (10 vol. %) and nitrogen gas (N2) at a temperature between about 1,100° C. and about 1,400° C. for not more than about 1 hour.

公开(公告)号：US11939230B1

公开(公告)日：2024-03-26

申请号：US18265872

申请日：2022-08-11

Applicant: GUANGDONG BRUNP RECYCLING TECHNOLOGY CO., LTD. ,  HUNAN BRUNP RECYCLING TECHNOLOGY CO., LTD. ,  HUNAN BRUNP EV RECYCLING CO., LTD.

Inventor： Aixia Li ,  Haijun Yu ,  Yinghao Xie ,  Xuemei Zhang ,  Changdong Li

IPC: H01M4/58 ,  C01G3/12 ,  C01G9/08 ,  H01M10/054 ,  H01M4/02

CPC classification number: C01G3/12 ,  C01G9/08 ,  H01M4/5815 ,  H01M10/054 ,  C01P2004/03 ,  C01P2004/62 ,  C01P2004/64 ,  C01P2004/82 ,  C01P2006/40 ,  H01M2004/021 ,  H01M2004/027

Abstract: A metal sulfide negative material of a sodium ion battery and a preparation method thereof. The material has porous nanoparticles with a particle size of 5 nm to 500 nm, and the metal sulfide negative material of the sodium ion battery is at least one of zinc sulfide or copper sulfide. The preparation method includes the steps of preparing a mixed solution of stannous chloride and metal salt, adding polyvinylpyrrolidone into the mixed solution to obtain a solution A, introducing reaction gas into the solution A, aging after the reaction to obtain a precipitate, and soaking the precipitate in a persulfide solution to obtain the metal sulfide sodium ion battery negative material.

公开(公告)号：US11808960B2

公开(公告)日：2023-11-07

申请号：US17546257

申请日：2021-12-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Tae Gon Kim ,  Shang Hyeun Park ,  Shin Ae Jun

IPC: G02B5/20 ,  G02F1/017 ,  C01G15/00 ,  C01G9/08 ,  C09K11/70 ,  C09K11/88 ,  B82Y20/00 ,  B82Y30/00 ,  B82Y40/00

CPC classification number: G02B5/207 ,  C01G9/08 ,  C01G15/006 ,  C09K11/70 ,  C09K11/883 ,  G02F1/01791 ,  B82Y20/00 ,  B82Y30/00 ,  B82Y40/00 ,  C01P2004/64 ,  C01P2004/80 ,  C01P2006/60 ,  G02B2207/101

Abstract: A color filter including a first pixel (or color conversion region) that is configured to emit a first light and a display device including the color filter. The first pixel includes a (first) quantum dot composite (or a color conversion layer including the quantum dot composite), wherein the quantum dot composite may include a matrix and a plurality of quantum dots dispersed (e.g., randomly) in the matrix, wherein the plurality of the quantum dots exhibit a multi-modal distribution (e.g., a bimodal distribution) including a first peak particle size and a second peak particle size in a size analysis, wherein the second peak particle size is greater than the first peak particle size, and a difference between the first peak particle size and the second peak particle size is less than or equal to about 5 nanometers (nm) (e.g., less than or equal to about 4.5 nm).

公开(公告)号：US20230250337A1

公开(公告)日：2023-08-10

申请号：US18297755

申请日：2023-04-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung Woo KIM ,  Eun Joo JANG ,  Hyo Sook JANG ,  Hwea Yoon KIM ,  Yuho WON

IPC: C09K11/88 ,  C01B19/00 ,  C01G9/08 ,  C09K11/56 ,  C09K11/62

CPC classification number: C09K11/883 ,  C01B19/007 ,  C01G9/08 ,  C09K11/56 ,  C09K11/62 ,  H10K50/115

Abstract: A quantum dot according to an embodiment includes a core including a first semiconductor nanocrystal including zinc, selenium, and tellurium and a semiconductor nanocrystal shell on the core, the semiconductor nanocrystal shell including a zinc chalcogenide, wherein the quantum dot does not include cadmium, the zinc chalcogenide includes zinc and selenium, the quantum dot further includes gallium and a primary amine having 5 or more carbon atoms, and the quantum dot is configured to emit light having a maximum emission peak in a range of greater than about 450 nanometers (nm) and less than or equal to about 480 nm by excitation light. A method of producing the quantum dot and an electronic device including the same are also disclosed.

公开(公告)号：US20230220279A1

公开(公告)日：2023-07-13

申请号：US18182428

申请日：2023-03-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jihyun MIN ,  Sungwoo HWANG ,  Yong Wook Kim ,  Ji-Yeong Kim ,  Soo Kyung KWON ,  Seon-Yeong Kim

IPC: C09K11/88 ,  C09K11/56 ,  C01G9/08 ,  C01B19/00 ,  B82Y40/00 ,  F21V8/00 ,  B82Y20/00

CPC classification number: C09K11/883 ,  H10K59/38 ,  H10K50/115 ,  C09K11/565 ,  C01G9/08 ,  C01B19/00 ,  H10K59/12 ,  C01P2006/60 ,  B82Y40/00 ,  G02B6/005 ,  C01P2002/74 ,  B82Y20/00

Abstract: A core shell quantum dot including a core including a first semiconductor nanocrystal and including zinc, tellurium, and selenium and a semiconductor nanocrystal shell disposed on the core and including a zinc chalcogenide, a method of manufacture thereof, and a device including the same are disclosed, wherein the core shell quantum dot does not include cadmium, lead, mercury, or a combination thereof, wherein in an X-ray photoelectron spectrum of the quantum dot, a peak area for Te oxide to a peak area for Te3d5/2 as an area percentage is less than or equal to about 25%.

公开(公告)号：US20230093467A1

公开(公告)日：2023-03-23

申请号：US18052597

申请日：2022-11-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jin A KIM ,  Yuho WON ,  Sung Woo KIM ,  Tae Hyung KIM ,  Jeong Hee LEE ,  Eun Joo JANG

IPC: C30B29/48 ,  C01G9/08 ,  C09K11/02 ,  C09K11/56 ,  C09K11/88 ,  H01L33/06 ,  H01L51/50 ,  H01L33/28

Abstract: A semiconductor nanocrystal particle, a production method thereof, and a light emitting device including the same. The semiconductor nanocrystal particle includes a core including a first semiconductor nanocrystal, a first shell surrounding the core, the first shell including a second semiconductor nanocrystal including a different composition from the first semiconductor nanocrystal, a second shell surrounding the first shell, the second shell including a third semiconductor nanocrystal including a different composition from the second semiconductor nanocrystal, wherein the first semiconductor nanocrystal includes zinc and sulfur; wherein the third semiconductor nanocrystal includes zinc and sulfur; wherein an energy bandgap of the second semiconductor nanocrystal is less than an energy bandgap of the first semiconductor nanocrystal and less than an energy bandgap of the third semiconductor nanocrystal; and wherein the semiconductor nanocrystal particle does not include cadmium.

公开(公告)号：US20220325179A1

公开(公告)日：2022-10-13

申请号：US17708245

申请日：2022-03-30

Applicant: Samsung Electronics Co., Ltd. ,  The Governing Council of the University of Toronto

Inventor： Eun Joo JANG ,  Seungjin Lee ,  Ted Sargent ,  Kwanghee KIM ,  Yuho WON

IPC: C09K11/88 ,  C01G9/00 ,  C09K11/55 ,  C09K11/70 ,  C01G9/08 ,  C01G15/00

Abstract: A quantum dot device and an electronic device including the device are provided. The quantum dot device includes a first electrode and a second electrode, a quantum dot layer disposed between the first electrode and the second electrode, and a hole auxiliary layer disposed between the quantum dot layer and the first electrode, wherein the hole auxiliary layer includes nickel oxide and a self-assembled monolayer disposed between the hole auxiliary layer and the quantum dot layer, the self-assembled monolayer including an organic compound represented by Chemical Formula 1.

公开(公告)号：US20220162085A1

公开(公告)日：2022-05-26

申请号：US17434146

申请日：2020-02-18

Applicant: THE RITSUMEIKAN TRUST

Inventor： Yoichi KOBAYASHI ,  Yulian HAN

IPC: C01G9/08

Abstract: Provided is a nanoparticle for photochromic materials that enables the production of photochromic materials in which the reaction time of a photochromic reaction is short.
The nanoparticle for photochromic materials is represented by the following formula (1): ZnX   (1), wherein X represents a Group 16 element, the nanoparticle being doped with and/or having, adsorbed thereto, a transition metal, the nanoparticle having organic ligands containing elemental sulfur on the surface thereof.

公开(公告)号：US11332666B2

公开(公告)日：2022-05-17

申请号：US17036068

申请日：2020-09-29

Applicant: Samsung Display Co., Ltd.

Inventor： Jooyeon Ahn ,  Jongmin Lee ,  Taekhoon Kim ,  Shin Ae Jun ,  Tae Gon Kim ,  Garam Park

IPC: C09K11/88 ,  C09K11/02 ,  H01L51/50 ,  C01G9/08 ,  C01B19/00 ,  C01G9/00 ,  C09K11/70 ,  C09K11/74 ,  H01L33/50 ,  B82Y30/00 ,  B82Y40/00 ,  B82Y20/00

Abstract: A quantum dot including a nanoparticle template including a first semiconductor nanocrystal including a Group II-VI compound, a quantum well including a second semiconductor nanocrystal disposed on the nanoparticle template, the second semiconductor nanocrystal including a Group IIIA metal excluding aluminum and a Group V element; and a shell comprising a third semiconductor nanocrystal disposed on the quantum well, the third semiconductor nanocrystal including a Group II-VI compound, wherein the quantum dot does not include cadmium, a band gap energy of the second semiconductor nanocrystal is less than a band gap energy of the first semiconductor nanocrystal, the band gap energy of the second semiconductor nanocrystal is less than a band gap energy of the third semiconductor nanocrystal, and the quantum dot includes an additional metal including an alkali metal, an alkaline earth metal, aluminum, iron, cobalt, nickel, copper, zinc, or a combination thereof.

公开(公告)号：US20220113585A1

公开(公告)日：2022-04-14

申请号：US16765434

申请日：2020-04-24

Applicant: TCL CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.

Inventor： Miao ZHOU

IPC: G02F1/1335 ,  C09K11/74 ,  C09K11/56 ,  C01G28/00 ,  C01G9/08 ,  G02F1/13357

Abstract: The present invention provides a quantum dot material structure, a liquid crystal display device, and an electronic device. The quantum dot material structure is applied in the liquid crystal display device. The quantum dot material structure includes a quantum dot core, a quantum dot shell, and a quantum dot ligand layer in order from an inside to an outside. The quantum dot core comprises a cadmium arsenide magic-size, and the quantum dot core is used to absorb green light of a predetermined wavelength. The quantum dot shell is used to protect the quantum dot core. The quantum dot ligand layer is used to promote a structural dispersion of the quantum dot material.