公开(公告)号：US20210159263A1

公开(公告)日：2021-05-27

申请号：US17156639

申请日：2021-01-25

申请人： Meridian Innovation Pte Ltd

发明人： Wan Chia ANG ,  Piotr KROPELNICKI ,  Ilker Ender OCAK ,  Paul Simon PONTIN

IPC分类号： H01L27/146 ,  H01L31/0224 ,  G01J5/16 ,  G01J5/08 ,  G01J5/12 ,  G01J5/04 ,  B81C1/00 ,  G01J5/02 ,  H01L31/09

摘要： A complementary metal oxide semiconductor (CMOS) device embedded with micro-electro-mechanical system (MEMS) components in a MEMS region. The MEMS components, for example, are infrared (IR) thermoconforms. The device is encapsulated with a CMOS compatible IR transparent cap to hermetically seal the MEMS sensors in the MEMS region. The CMOS cap includes a base cap with release openings and a seal cap which seals the release openings.

公开(公告)号：US10903262B2

公开(公告)日：2021-01-26

申请号：US16517653

申请日：2019-07-21

申请人： Meridian Innovation Pte Ltd

发明人： Piotr Kropelnicki ,  Ilker Ender Ocak ,  Paul Simon Pontin

IPC分类号： H01L27/146 ,  G01J5/04 ,  G01J5/12 ,  G01J5/02 ,  B81C1/00 ,  G01J5/08 ,  G01J5/16 ,  H01L31/0224 ,  H01L31/09

摘要： Device and method of forming the device are disclosed. The method includes providing a substrate prepared with a complementary metal oxide semiconductor (CMOS) region and a sensor region. A substrate cavity is formed in the substrate in the sensor region, the substrate cavity including cavity sidewalls and cavity bottom surface and a membrane which serves as a substrate cavity top surface. The cavity bottom surface includes a reflector. The method also includes forming CMOS devices in the CMOS region, forming a micro-electrical mechanical system (MEMS) component on the membrane, and forming a back-end-of-line (BEOL) dielectric disposed on the substrate having a plurality of interlayer dielectric (ILD) layers. The BEOL dielectric includes an opening to expose the MEMS component. The opening forms a BEOL cavity above the MEMS component.

公开(公告)号：US20180175848A1

公开(公告)日：2018-06-21

申请号：US15697476

申请日：2017-09-07

申请人： Mitsubishi Electric Corporation

发明人： Kazuya HOKAZONO ,  Akihisa YAMAMOTO ,  Dong WANG

IPC分类号： H03K17/0812 ,  H03K17/0814 ,  G01J5/06 ,  G01J5/12 ,  G01J5/16

CPC分类号： H03K17/08122 ,  G01J5/061 ,  G01J5/12 ,  G01J5/16 ,  H01L25/16 ,  H03K17/08142 ,  H03K17/689 ,  H03K2017/0806

摘要： A level shift circuit includes: an electrothermal converter converting a first electric signal with a first reference potential as a reference to heat; a thermoelectric converter converting the heat from the electrothermal converter to a second electric signal with a second reference potential which is different from the first reference potential as a reference; and an insulating region electrically insulating the electrothermal converter from the thermoelectric converter.

公开(公告)号：US09976908B2

公开(公告)日：2018-05-22

申请号：US14202998

申请日：2014-03-10

申请人： Exergen Corporation

发明人： Jason N. Jarboe ,  Francesco Pompei

IPC分类号： G01J5/00 ,  G01J5/06 ,  G01J5/12 ,  G01J5/16

CPC分类号： G01J5/06 ,  G01J5/0003 ,  G01J5/0022 ,  G01J5/061 ,  G01J5/12 ,  G01J5/16 ,  G01J2005/0029 ,  G01J2005/068

摘要： Devices and corresponding methods can be provided to monitor or measure temperature of a target or to control a process. Targets can have low, unknown, or variable emissivity. Devices and corresponding methods can be used to measure temperatures of thin film, partially transparent, or opaque targets, as well as targets not filling a sensor's field of view. Temperature measurements can be made independent of emissivity of a target surface by, for example, inserting a target between a thermopile sensor and a background surface maintained at substantially the same temperature as the thermopile sensor. In embodiment devices and methods, a sensor temperature can be controlled to match a target temperature by minimizing or zeroing a net heat flux at the sensor, as derived from a sensor output signal. Alternatively, a target temperature can be controlled to minimize the heat flux.

公开(公告)号：US09759613B2

公开(公告)日：2017-09-12

申请号：US13643723

申请日：2011-04-26

申请人： Mitsuteru Kimura ,  Nobuo Tanaka ,  Hironori Shimobayashi

发明人： Mitsuteru Kimura ,  Nobuo Tanaka ,  Hironori Shimobayashi

IPC分类号： G01J5/12 ,  G01K7/02 ,  G01J5/02 ,  G01J5/16 ,  G01K7/01 ,  H01L35/08 ,  G01J5/10

CPC分类号： G01J5/02 ,  G01J5/16 ,  G01J2005/106 ,  G01K7/01 ,  H01L35/08

摘要： Disclosed are a temperature sensor device using a thermopile, the total number n of thermocouples thereon can be increased without greatly increasing the internal resistance of the thermopile r, providing high output level and high S/N ratio, a highly sensitive radiation thermometer using the device, and production method of the device using organic material for thin films to form the thermopile. These provide a standardized inexpensive multi-layered thin film thermopile, a radiation thermometer with high sensitivity, and production method of these devices. The temperature sensor device is a device wherein a thermopile which is formed on a thin film thermally isolated from a substrate is place in a temperature sensing part, and the thin film is formed as a multi-layered thin film, a layered thermopile is formed on each layered thin film, the substrate functioning as a heat sink which is one junction of the reference temperature of the thermopile.

公开(公告)号：US20170138795A1

公开(公告)日：2017-05-18

申请号：US15249214

申请日：2016-08-26

申请人： PixArt Imaging Incorporation

发明人： Ming-Han Tsai ,  Shin-Lin Wang

IPC分类号： G01J5/16

CPC分类号： G01J5/16 ,  G01J5/024 ,  G01J5/12

摘要： The present invention discloses a thermal pile sensing structure integrated with one or more capacitors, which includes: a substrate, an infrared sensing unit and a partition structure. The infrared sensing unit includes a first and a second sensing structure. A hot junction is formed between the first and the second sensing structures at a location where the first and the second sensing structures are close to each other. A cold junction is formed between the partition structure and the first sensing structure at a location where these two structures are close to each other. Another cold junction is formed between the partition structure and the second sensing structure at a location where these two structures are close to each other. A temperature difference between the hot junction and the cold junction generates a voltage difference signal. Apart of the partition structure forms at least one capacitor.

公开(公告)号：US09541453B2

公开(公告)日：2017-01-10

申请号：US12876352

申请日：2010-09-07

申请人： Chun-Hua Hu ,  Chang-Hong Liu ,  Shou-Shan Fan

发明人： Chun-Hua Hu ,  Chang-Hong Liu ,  Shou-Shan Fan

IPC分类号： G01J5/16 ,  G01J5/12 ,  G01J5/14 ,  G01J5/04 ,  B82Y30/00 ,  H01L51/00 ,  H01L51/44 ,  H01L31/0256 ,  G01J5/02 ,  H01L35/32 ,  G01J5/06 ,  G01J1/16

CPC分类号： G01J5/16 ,  B82Y30/00 ,  G01J1/1626 ,  G01J5/02 ,  G01J5/023 ,  G01J5/04 ,  G01J5/048 ,  G01J5/12 ,  G01J5/14 ,  G01J2005/065 ,  G01J2005/068 ,  G01N2201/022 ,  H01L35/32 ,  H01L51/0048 ,  H01L51/441 ,  H01L51/448 ,  H01L2031/0344

摘要： An infrared detector includes a detecting element, a first electrode, a second electrode, and a covering structure. The detecting element defines an absorbing part and a non-absorbing part. The detecting element includes a first end and a second end opposite with the first end. The first end is disposed in the absorbing part. The second end is disposed in the non-absorbing part. The first electrode is electrically connected with the first end. The second electrode is electrically connected with the second end. The covering structure covers the non-absorbing part. The detecting element further includes a carbon nanotube layer. The carbon nanotube layer includes a plurality of carbon nanotubes disposed uniformly.

摘要翻译： 红外检测器包括检测元件，第一电极，第二电极和覆盖结构。 检测元件限定吸收部分和非吸收部分。 检测元件包括第一端和与第一端相对的第二端。 第一端设置在吸收部中。 第二端设置在非吸收部。 第一电极与第一端电连接。 第二电极与第二端电连接。 覆盖结构覆盖非吸收部分。 检测元件还包括碳纳米管层。 碳纳米管层包括均匀排列的多个碳纳米管。

公开(公告)号：US09494467B2

公开(公告)日：2016-11-15

申请号：US14761807

申请日：2014-01-20

申请人： PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.

发明人： Yoshifumi Watabe ,  Sadayuki Sumi ,  Yuichi Inaba ,  Junichi Hozumi ,  Takahiko Hirai ,  Tsuyoshi Kuroda

IPC分类号： G01J5/00 ,  G01J5/16 ,  H01L37/02 ,  G01J5/04 ,  G01J5/08 ,  G01J3/42 ,  G01J5/34 ,  G01J1/02

摘要： An infrared detection element includes first and second pyroelectric elements which are arranged in a single pyroelectric substrate. First pyroelectric element includes a first surface electrode, a first back face electrode, and a first portion interposed between first surface and back face electrodes. First portion is provided as part of pyroelectric substrate. Second pyroelectric element includes a second surface electrode, a second back face electrode, and a second portion interposed between second surface and back face electrodes. Second portion is provided as part of pyroelectric substrate. Pyroelectric substrate is provided in part thereof surrounding first pyroelectric element with a slit shaped along an outer periphery of first pyroelectric element. Slit is formed out of regions in which a first surface wiring and a first back face wiring are disposed. Part of pyroelectric substrate surrounding second pyroelectric element is continuously formed over an entire circumference of second portion.

公开(公告)号：US20070297485A1

公开(公告)日：2007-12-27

申请号：US11570305

申请日：2005-06-08

申请人： Henrik Ernst ,  Hermann Karagozoglu ,  Martin Hausner ,  Guido Lauck ,  Jurgen Schilz

发明人： Henrik Ernst ,  Hermann Karagozoglu ,  Martin Hausner ,  Guido Lauck ,  Jurgen Schilz

IPC分类号： G01J5/16

CPC分类号： G01J5/16 ,  G01J5/06

摘要： A sensor element (10) for detecting electromagnetic radiation, particularly in the infrared range, comprises one or more heat-sensitive portions (4a, 4b) provided on a substrate (1-3) and one or more influencing layers (5a, 5b) for influencing the absorption and/or reflection of the electromagnetic radiation to be detected. The heat-sensitive portion(s) and/or the influencing layers are arranged on the substrate in accordance with the thermal properties of the influencing layers, preferably asymmetrically.

摘要翻译： 用于检测特别是红外范围的电磁辐射的传感器元件（10）包括一个或多个设置在基板（1-3）上的热敏部分（4a，4b）和一个或多个影响层（5a） ，5b）用于影响待检测的电磁辐射的吸收和/或反射。 热敏部分和/或影响层根据影响层的热性质优选不对称地布置在基底上。

公开(公告)号：US06909093B2

公开(公告)日：2005-06-21

申请号：US10258641

申请日：2002-01-31

申请人： Shigemi Sato ,  Hideto Yamashita ,  Tsutomu Hagihara

发明人： Shigemi Sato ,  Hideto Yamashita ,  Tsutomu Hagihara

IPC分类号： A61B5/01 ,  G01J5/16 ,  H01L23/00 ,  G01J5/20

CPC分类号： G01J5/16

摘要： To provide a thermopile infrared detecting element capable of accurate temperature measurement at low cost. An infrared detecting element 1 using a silicon nitride film as a first structure layer 22 constituting a structure of a membrane portion 4 is provided. Unlike silicon oxide, the first structure layer 22 has internal stress in the tensile direction, and can thus prevent the occurrence of bending. Also, diodes D1 and D2 can be formed in a silicon substrate 2 by using the first structure layer 22 as an element isolation region, and thus deformation of a thermopile 12 due to a change in the environment can be prevented to suppress measurement error of the thermopile 12. Furthermore, a high accuracy infrared detecting element capable of accurately detecting the temperature of cold junctions using the diodes D1 and D2 can be provided.

摘要翻译： 提供能够以低成本进行精确的温度测量的热电堆红外线检测元件。 提供了使用氮化硅膜作为构成膜部4的结构的第一结构层22的红外线检测元件1。 与氧化硅不同，第一结构层22在拉伸方向具有内应力，因此可以防止弯曲的发生。 此外，通过使用第一结构层22作为元件隔离区域，也可以在硅衬底2中形成二极管D1和D2，从而可以防止由于环境变化导致的热电堆12的变形，从而抑制测量误差 的热电堆12。 此外，可以提供能够精确地检测使用二极管D1和D2的冷接点的温度的高精度红外线检测元件。