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公开(公告)号：US20240310721A1
公开(公告)日：2024-09-19
申请号：US18666889
申请日：2024-05-17
申请人： Cart Zeiss SMT GmbH
发明人： Michael Budach
摘要： The present invention relates to a method and an apparatus for calibrating an operation on a mask. A method for producing correction marks on an object for lithography, in particular for calibrating an operation, using a particle beam includes: (a.) producing a first group of correction marks; and (b.) producing a second group of correction marks; (c.) wherein the separations of the correction marks within the first and within the second group are smaller than the separations between correction marks from the first group and correction marks from the second group.
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公开(公告)号：US20240282647A1
公开(公告)日：2024-08-22
申请号：US18171729
申请日：2023-02-21
摘要： A reticle includes a body having a single-use illumination field. The single-use illumination field defines a layer including: a plurality of integrated circuit (IC) die clusters, each of the plurality of IC die clusters including a plurality of IC dies separated by a first scribe line having a first width. The plurality of IC die clusters are arranged in juxtaposition on the body and are separated by a second scribe line having a second width larger than the first width. The IC die clusters each have a same number of IC dies and a same area. There may be a different number of IC dies in an X direction than in a Y direction. The wider scribe lines are configured to include all optical or electrical test structures, and minimize effective die area. A wafer formed using the reticle and a method of forming the reticle are also provided.
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公开(公告)号：US11977327B2
公开(公告)日：2024-05-07
申请号：US17749952
申请日：2022-05-20
申请人： Synopsys, Inc.
IPC分类号： G06F30/30 , G03F1/36 , G03F1/44 , G03F1/70 , G06F16/51 , G06F30/392 , G06F111/20
CPC分类号： G03F1/70 , G03F1/36 , G03F1/44 , G06F16/51 , G06F30/392 , G06F2111/20
摘要： A system generates a mask for a circuit design while enforcing symmetry and consistency across random areas of the mask. The system builds a mask solutions database mapping circuit patterns to mask patterns. The system uses the mask solutions database to replace circuit patterns of the circuit design with mask patterns. The system identifies properties in circuit patterns of the circuit design and enforces the same property in the corresponding mask patterns. Examples of properties enforced include symmetry within circuit patterns and similarity across circuit patterns. The system combines mask patterns in different regions of the circuit and resolves conflicts that occur when there are multiple masks within a region.
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公开(公告)号：US20240118606A1
公开(公告)日：2024-04-11
申请号：US17923471
申请日：2022-10-06
申请人： KLA Corporation
发明人： Itay GDOR , Yuval LUBASHEVSKY , Daria NEGRI , Eitan HAJAJ , Vladimir LEVINSKI
摘要： A method for semiconductor metrology includes depositing first and second overlying film layers on a semiconductor substrate and patterning the layers to define an overlay target. The target includes a first grating pattern in the first layer, including at least a first linear grating oriented in a first direction and at least a second linear grating oriented in a second direction perpendicular to the first direction, and a second grating pattern in the second layer, including at least a third linear grating identical to the first linear grating and a fourth linear grating identical to the second linear grating. The second grating pattern has a nominal offset relative to the first grating pattern by first and second displacements in the first and second directions, respectively. A scatterometric image of the substrate is captured and processed to estimate an overlay error between the patterning of the first and second layers.
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公开(公告)号：US20240094625A1
公开(公告)日：2024-03-21
申请号：US18522942
申请日：2023-11-29
发明人： Hsin-Chang LEE , Ping-Hsun LIN , Chih-Cheng LIN , Chia-Jen CHEN
摘要： A method of making a semiconductor device includes forming at least one fiducial mark on a photomask. The method further includes defining a pattern including a plurality of sub-patterns on the photomask in a pattern region. The defining the pattern includes defining a first sub-pattern of the plurality of sub-patterns having a first spacing from a second sub-pattern of the plurality of sub-patterns, wherein the first spacing is different from a second spacing between the second sub-pattern and a third sub-pattern of the plurality of sub-patterns.
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6.发明公开公开(公告)号：US20240085778A1
公开(公告)日：2024-03-14
申请号：US18318042
申请日：2023-05-16
发明人： Byungje Jung
摘要： A photomask includes at least one line pattern monitoring mark having unit blocks that include design line patterns. Each of the unit blocks includes three design line patterns sequentially offset in a second direction perpendicular to the first direction, the unit blocks include a first unit block and a second unit block adjacent to the first unit block, the second unit block is offset from the first unit block by a rounding length in the second direction and is spaced apart from the first unit block in the first direction. In a method of manufacturing an integrated circuit device, monitoring line patterns are formed using the photomask, and a line end profile error in the monitoring line patterns is determined based on a cross-sectional structure of the monitoring line patterns taken along a line extending through at least a portion of the monitoring line patterns in the first direction.
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公开(公告)号：US20240053673A1
公开(公告)日：2024-02-15
申请号：US17885870
申请日：2022-08-11
发明人： Hsin-Chieh CHEN , Cheng-Che CHUNG
摘要： In a layout alignment method of a lithographic system for semiconductor device processing, a reference pattern that is included in a reference pattern module is disposed over an alignment pattern of a substrate. The alignment pattern includes two or more sub-patterns that extend in a first interval along a first direction and are arranged with a first pitch in a second direction. Each sub-pattern includes first patterns and second patterns. A width of the first pattern is at least twice as wide as a width of the second pattern. The reference pattern at least partially overlap with the alignment pattern. An overlay alignment error between the reference pattern and the alignment pattern of the substrate is determined. When the overlay alignment error is not more than a threshold value, a photo resist pattern is produced on the substrate based on the layout pattern associated with reference pattern.
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公开(公告)号：US11797748B2
公开(公告)日：2023-10-24
申请号：US17418102
申请日：2019-11-18
发明人： Quan Zhang , Yong-Ju Cho , Zhangnan Zhu , Boyang Huang , Been-Der Chen
IPC分类号： G06F30/30 , G03F7/00 , G06F30/398 , G03F1/36 , G03F1/70 , G03F1/44 , G06F119/18
CPC分类号： G06F30/398 , G03F1/36 , G03F1/70 , G03F7/70441 , G03F1/44 , G06F2119/18
摘要： A method for generating a mask pattern to be employed in a patterning process. The method including obtaining (i) a first feature patch including a first polygon portion of an initial mask pattern, and (ii) a second feature patch including a second polygon portion of the initial mask pattern; adjusting the second polygon portion at a patch boundary between the first feature patch and the second feature patch such that a difference between the first polygon portion and the second polygon portion at the patch boundary is reduced; and combining the first polygon portion and the adjusted second polygon portion at the patch boundary to form the mask pattern.
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公开(公告)号：US11703752B2
公开(公告)日：2023-07-18
申请号：US17213047
申请日：2021-03-25
发明人： Wu-Hung Ko , Kun-Lung Hsieh , Chih-Wei Wen
摘要： A method of testing a photomask assembly includes placing the photomask assembly into a chamber, wherein the photomask assembly includes a pellicle attached to a first side of a photomask. The method further includes exposing the photomask assembly to a radiation source having a wavelength ranging from about 160 nm to 180 nm in the chamber to accelerate haze development, wherein the exposing of the photomask assembly includes illuminating an entirety of an area of the photomask covered by the pellicle throughout an entire illumination time and illuminating a frame adhesive attaching the pellicle to the photomask. The method further includes detecting haze of the photomask following exposing the photomask assembly to the radiation source. The method further includes predicting performance of the photomask assembly during a manufacturing process based on the detected haze of the photomask following exposing the photomask assembly to the radiation source.
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10.发明申请公开(公告)号：US20220350239A1
公开(公告)日：2022-11-03
申请号：US17712905
申请日：2022-04-04
摘要： Method (and apparatus) for producing a 3D target structure in lithographic material. Focus region of a laser writing beam travels through a scanning manifold through the lithographic material. In the focus region of the laser writing beam, an exposure dose is irradiated into the lithographic material, and a structure region is locally defined. At least one exposure data set which represents a local exposure dose for the scan manifold as a function of location is determined. A structure which approximates the target structure is defined based on at least one exposure data set. This structure is analyzed and at least one analysis data set which represents the analyzed structure is determined. Deviation data set which represents deviations of the already defined structure from the target structure is determined. At least one correction exposure data set is determined. Correction structure based on the at least one correction exposure data set is defined.
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