Processing apparatus and photoelectric conversion system

    公开(公告)号:US12219278B2

    公开(公告)日:2025-02-04

    申请号:US18167004

    申请日:2023-02-09

    Abstract: A processing apparatus includes a first storage unit for storing first array data that is based on output values of a plurality of pixels arranged in an array, a second storage unit having second array data stored therein to be used for correction of the output values from the plurality of pixels, and a correction unit including a calculation unit that corrects an output value of at least one pixel of the plurality of pixels based on the first array data and the second array data.

    SINGLE SHEET FOLDOUT SOLAR ARRAY
    4.
    发明公开

    公开(公告)号:US20240235468A1

    公开(公告)日:2024-07-11

    申请号:US18616548

    申请日:2024-03-26

    Inventor: Eric Rehder

    Abstract: One or more solar cells are connected to a flex circuit, wherein: the flex circuit is single sheet; the flex circuit is comprised of a flexible substrate having one or more conducting layers for making electrical connections to the solar cells; and the flex circuit includes one or more flat sections where the solar cells are attached to the flex circuit that remain flat when the flex circuit is folded and one or more folding sections between the flat sections where the flex circuit is folded.

    In-cell bypass diode
    7.
    发明授权

    公开(公告)号:US11508860B2

    公开(公告)日:2022-11-22

    申请号:US16881705

    申请日:2020-05-22

    Abstract: A solar cell can include a built-in bypass diode. In one embodiment, the solar cell can include an active region disposed in or above a first portion of a substrate and a bypass diode disposed in or above a second portion of the substrate. The first and second portions of the substrate can be physically separated with a groove. A metallization structure can couple the active region to the bypass diode.

    Solid-state imaging device and manufacturing method

    公开(公告)号:US11387264B2

    公开(公告)日:2022-07-12

    申请号:US16349341

    申请日:2017-11-07

    Inventor: Koichi Takeuchi

    Abstract: A substrate includes a photoelectric converting unit in a pixel unit and a reflection ratio adjusting layer provided on the substrate in an incident direction of incident light with respect to the substrate for adjusting reflection of the incident light on the substrate. The reflection ratio adjusting layer includes a first layer formed on the substrate and a second layer formed on the first layer, the first layer has an uneven structure provided on the substrate, and a recess portion on the uneven structure is filled with a material having a lower refractive index than that of the substrate forming the second layer, and a thickness of the first layer is optimized for a wavelength of light to be received. The present technology may be applied to an imaging device.

    Photodetector and imaging device
    10.
    发明授权

    公开(公告)号:US11282873B2

    公开(公告)日:2022-03-22

    申请号:US16445533

    申请日:2019-06-19

    Abstract: A photodetector includes: a photoelectric conversion layer including a first principal surface from which light enters and a second principal surface on the opposite side from the first principal surface and configured to perform photoelectric conversion on the light; a first diffraction grating formed on a side of the second principal surface and including a configuration where first surfaces which extend in a stripe state in a first direction and second surfaces which extend in a stripe state in the first direction and have a height difference with respect to the first surfaces are alternately arranged; metal wires provided at intervals over the first surfaces and the second surfaces and which extend in the first direction or a second direction perpendicular to the first direction; and a second diffraction grating formed over the first diffraction grating and including grooves which are formed at intervals and extend in the second direction.

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