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公开(公告)号:US12219278B2
公开(公告)日:2025-02-04
申请号:US18167004
申请日:2023-02-09
Applicant: CANON KABUSHIKI KAISHA
Inventor: Kazuhiro Morimoto , Hiroshi Sekine
IPC: H04N25/68 , H01L27/142 , H01L27/146 , H01L31/02
Abstract: A processing apparatus includes a first storage unit for storing first array data that is based on output values of a plurality of pixels arranged in an array, a second storage unit having second array data stored therein to be used for correction of the output values from the plurality of pixels, and a correction unit including a calculation unit that corrects an output value of at least one pixel of the plurality of pixels based on the first array data and the second array data.
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公开(公告)号:US12189260B2
公开(公告)日:2025-01-07
申请号:US18071155
申请日:2022-11-29
Applicant: E Ink Corporation
Inventor: Nishit Murari
IPC: G02F1/1676 , C08J3/075 , C08J3/24 , C08K3/04 , C08K3/16 , C08K3/22 , G02F1/13 , G02F1/1343 , G02F1/167 , G02F1/16757 , H01B1/04 , H01B1/12 , H01L27/142 , H01L31/0392 , H10K59/88 , H10K71/00 , H10K77/10 , H01L31/0224 , H10K85/10 , H10K85/20 , H10K102/00
Abstract: A multi-laver device and its method of manufacture are disclosed. The multi-layer device comprises a first electrode layer, a first repair layer, a functional layer, and a second electrode layer. The first repair layer comprises a conductive hydrogel film or conductive hydrogel beads, the conductive hydrogel film or the conductive hydrogel beads comprising conductive filler particles dispersed in a cross-linked polymer. The repair layer protects the multi-layer device from electrical short circuits. A multilayer device is also disclosed including a light-transmissive electrode layer comprising a porous mesh or porous spheres.
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公开(公告)号:US12119362B2
公开(公告)日:2024-10-15
申请号:US17185129
申请日:2021-02-25
Inventor: Sanshiro Shishido , Shinichi Machida , Takeyoshi Tokuhara , Katsuya Nozawa
IPC: H01L27/14 , G02B5/20 , H01L27/146 , H01L31/0352 , H01L31/0384 , H01L27/142 , H01L31/0256
CPC classification number: H01L27/14625 , G02B5/208 , H01L27/14621 , H01L27/14627 , H01L27/14667 , H01L31/035218 , H01L31/035227 , H01L31/03845 , H01L27/142 , H01L27/14643 , H01L2031/0344
Abstract: A light sensor includes a photoelectric conversion layer and a long-pass filter that is disposed above the photoelectric conversion layer. The photoelectric conversion layer has a spectral sensitivity characteristic having a first peak at a first wavelength that is longer than a cut-on wavelength of the long-pass filter, and a spectral sensitivity of the photoelectric conversion layer at the cut-on wavelength is greater than or equal to 0% and less than or equal to 50% of a spectral sensitivity of the photoelectric conversion layer at the first wavelength.
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公开(公告)号:US20240235468A1
公开(公告)日:2024-07-11
申请号:US18616548
申请日:2024-03-26
Applicant: The Boeing Company
Inventor: Eric Rehder
IPC: H02S30/20 , H01L27/142 , H01L31/048 , H01L31/05
CPC classification number: H02S30/20 , H01L27/142 , H01L31/048 , H01L31/05 , H01L31/0508
Abstract: One or more solar cells are connected to a flex circuit, wherein: the flex circuit is single sheet; the flex circuit is comprised of a flexible substrate having one or more conducting layers for making electrical connections to the solar cells; and the flex circuit includes one or more flat sections where the solar cells are attached to the flex circuit that remain flat when the flex circuit is folded and one or more folding sections between the flat sections where the flex circuit is folded.
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公开(公告)号:US12029052B2
公开(公告)日:2024-07-02
申请号:US17597573
申请日:2020-07-15
Applicant: Tamotsu Horiuchi , Takahiro Ide , Yuuji Tanaka , Nozomu Tamoto , Naomichi Kanei , Masana Shiba
Inventor: Tamotsu Horiuchi , Takahiro Ide , Yuuji Tanaka , Nozomu Tamoto , Naomichi Kanei , Masana Shiba
IPC: H10K30/40 , H01L27/142 , H10K30/81 , H10K30/86 , H10K39/18
CPC classification number: H10K30/40 , H01L27/142 , H10K30/81 , H10K30/86 , H10K39/18
Abstract: A solar cell module includes a first substrate and a plurality of photoelectric conversion elements disposed on the first substrate. Each of the plurality of photoelectric conversion elements includes a first electrode, an electron transport layer, a perovskite layer, a hole transport layer, and a second electrode. In at least two of the photoelectric conversion elements adjacent to each other, the hole transport layers are extended continuous layers; and the first electrodes, the electron transport layers, and the perovskite layers in the at least two of the photoelectric conversion elements adjacent to each other are separated by the hole transport layer. The hole transport layer includes, as hole transport material, a polymer having a weight average molecular weight of 2,000 or more or a compound having a molecular weight of 2,000 or more.
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公开(公告)号:US20230215880A1
公开(公告)日:2023-07-06
申请号:US17915619
申请日:2021-03-24
Inventor: Masahiro JOEI , Shintarou HIRATA , Tomiyuki YUKAWA , Ryosuke SUZUKI , Hiroshi NAKANO , Toshihiko HAYASHI , Ryotaro TAKAGUCHI , Iwao YAGI , Kenichi MURATA
IPC: H01L27/142 , H01L27/146 , H10K39/32
CPC classification number: H01L27/142 , H01L27/1462 , H01L27/14647 , H10K39/32 , H01L27/14612 , H01L27/14638
Abstract: An imaging element according to an embodiment of the present disclosure includes: a first electrode and a second electrode; a third electrode; a photoelectric conversion layer; and a semiconductor layer. The first electrode and the second electrode are disposed in parallel. The third electrode is disposed to be opposed to the first electrode and the second electrode. The photoelectric conversion layer is provided between the first electrode and second electrode and the third electrode. The semiconductor layer is provided between the first electrode and second electrode and the photoelectric conversion layer. The semiconductor layer has a first layer and a second layer stacked therein in order from the photoelectric conversion layer side. The second layer has an energy level at a lowest edge of a conduction band that is shallower than an energy level of the first layer at a lowest edge of a conduction band.
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公开(公告)号:US11508860B2
公开(公告)日:2022-11-22
申请号:US16881705
申请日:2020-05-22
Applicant: SunPower Corporation
Inventor: Seung Bum Rim , Gabriel Harley
IPC: H01L31/0443 , H01L31/02 , H01L31/0368 , H01L31/18 , H01L27/142
Abstract: A solar cell can include a built-in bypass diode. In one embodiment, the solar cell can include an active region disposed in or above a first portion of a substrate and a bypass diode disposed in or above a second portion of the substrate. The first and second portions of the substrate can be physically separated with a groove. A metallization structure can couple the active region to the bypass diode.
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公开(公告)号:US20220367741A1
公开(公告)日:2022-11-17
申请号:US17878348
申请日:2022-08-01
Applicant: The Boeing Company
Inventor: Eric Rehder , Philip Chiu , Tom Crocker , Daniel Law , Dale Waterman
IPC: H01L31/042 , H01L31/0224 , H01L31/05 , H01L27/142 , H01L31/0443 , H01L31/044 , H01L31/02 , H01L31/0352 , H02S40/34 , H01L21/02 , H01L31/0392 , H01L31/0687 , H01L31/048
Abstract: A solar cell for a solar cell array with one or more grid on a surface thereof, wherein electrical connections are made to the grids in a plurality of locations positioned around the solar cell; and the electrical connections extend to one or more conductors located under the solar cell. The conductors located under the solar cell are buried within a substrate, and each of the conductors comprises a low resistance conducting path that distributes current from the solar cell. The conductors are loops, U-shaped, or have only up or down pathways. The solar cell comprises a full cell that has four cropped corners and the locations are in the cropped corners.
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公开(公告)号:US11387264B2
公开(公告)日:2022-07-12
申请号:US16349341
申请日:2017-11-07
Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
Inventor: Koichi Takeuchi
IPC: H01L27/146 , H01L27/142 , H04N5/341 , H04N5/369 , G02B1/115 , H01L21/027 , G03F7/20
Abstract: A substrate includes a photoelectric converting unit in a pixel unit and a reflection ratio adjusting layer provided on the substrate in an incident direction of incident light with respect to the substrate for adjusting reflection of the incident light on the substrate. The reflection ratio adjusting layer includes a first layer formed on the substrate and a second layer formed on the first layer, the first layer has an uneven structure provided on the substrate, and a recess portion on the uneven structure is filled with a material having a lower refractive index than that of the substrate forming the second layer, and a thickness of the first layer is optimized for a wavelength of light to be received. The present technology may be applied to an imaging device.
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公开(公告)号:US11282873B2
公开(公告)日:2022-03-22
申请号:US16445533
申请日:2019-06-19
Applicant: FUJITSU LIMITED
Inventor: Hiroyasu Yamashita
IPC: H01L27/146 , H01L27/142 , H01L31/10 , H01L27/14
Abstract: A photodetector includes: a photoelectric conversion layer including a first principal surface from which light enters and a second principal surface on the opposite side from the first principal surface and configured to perform photoelectric conversion on the light; a first diffraction grating formed on a side of the second principal surface and including a configuration where first surfaces which extend in a stripe state in a first direction and second surfaces which extend in a stripe state in the first direction and have a height difference with respect to the first surfaces are alternately arranged; metal wires provided at intervals over the first surfaces and the second surfaces and which extend in the first direction or a second direction perpendicular to the first direction; and a second diffraction grating formed over the first diffraction grating and including grooves which are formed at intervals and extend in the second direction.
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