Dual-port SRAM
    1.
    发明授权

    公开(公告)号:US12009818B2

    公开(公告)日:2024-06-11

    申请号:US17872445

    申请日:2022-07-25

    摘要: The present application discloses a dual-port SRAM having two ports. On a layout, pass gates connecting to the two ports are disposed near pull down transistors of corresponding memory nodes. A cell layout structure of the SRAM cell structure is centrosymmetric. In a first subunit layout structure, a pass gate and a first pull down transistor share the same active region, and an active region of the other pull down transistor is disposed between active regions of the first pull down transistor and a first pull up transistor. The present application improves the symmetry of read paths of the two memory nodes from two ports thus the symmetry of read currents, therefore the variation of the electrical performance of PMOS transistors is reduced and the stability of the electrical performance of the PMOS transistors is improved.

    Output Buffer for a Swappable Single Conductor Interface

    公开(公告)号:US20230318598A1

    公开(公告)日:2023-10-05

    申请号:US17711845

    申请日:2022-04-01

    申请人: pSemi Corporation

    摘要: Circuits and methods for determining the characteristics of swappable pins in a peripheral in a 1-Wire or similar single-conductor system, thereby allowing each one of two pins to be either an I/O pin (connected to an I/O line) or a CAP pin (connected to a storage capacitor). Embodiments may utilize a hybrid buffer circuit that utilizes an effectively bi-directional PFET pull-up device coupled between the swappable pins A and B. Two open-drain NFETs pull-down devices are used, one on either side of the PFET and coupled to a respective pin (A or B), but with only one NFET being selected to be operable based on pin-determination flag signals from the pin detection circuitry. Such a hybrid buffer circuit would consume significantly less IC area than two complete conventional buffers, resulting in less leakage and less yield loss.

    System and methods for electric discharge machining

    公开(公告)号:US11483002B2

    公开(公告)日:2022-10-25

    申请号:US15440088

    申请日:2017-02-23

    IPC分类号: H03K19/0944 B23H1/02

    摘要: A multi-loop controller component for an electric discharge machining (EDM) system includes a plurality of power loop circuits coupled to an output of a power supply of the EDM system and configured to receive DC electric power from the power supply. Each power loop circuits electrically-isolated from other power loop circuits. The multi-loop controller component also includes a plurality of transistors. Each transistor is coupled to a respective power loop circuit and is configured to switch between an ON state and an OFF state to generate a pulse of the DC electric power through the respective power loop circuit. In addition, the multi-loop controller component has a drive controller coupled to the plurality of transistors. The drive controller is configured to transmit at least one control signal to at least one of the transistors to facilitate switching the transistor between the ON state and the OFF state.

    Semiconductor device drive circuit

    公开(公告)号:US11476847B2

    公开(公告)日:2022-10-18

    申请号:US17474726

    申请日:2021-09-14

    摘要: An object of the present disclosure is to provide a semiconductor device drive circuit stably preventing an erroneous operation in accordance with an application of dV/dt. A semiconductor device drive circuit includes: pulse transmission circuits outputting an on-pulse transmission signal and an off-pulse transmission signal based on a level shift on-pulse signal and a level shift off-pulse signal; a dV/dt detection circuit detecting a dV/dt period based on the level shift on-pulse signal and the level shift off-pulse signal; a logic filter circuit which does not change outputs when both the on-pulse transmission signal and the off-pulse transmission signal are input; and a latch circuit outputting a signal synchronized with an output of the logic filter circuit. The pulse transmission circuit includes impedance adjusting parts reducing a signal level of the on-pulse transmission signal and the off-pulse transmission signal during the dV/dt period.

    Electrical system
    6.
    发明授权

    公开(公告)号:US11323114B2

    公开(公告)日:2022-05-03

    申请号:US17060566

    申请日:2020-10-01

    申请人: Lear Corporation

    摘要: An electrical system may include a mounting surface, a component configured for connection with the mounting surface and configured to move relative to the mounting surface, and/or an orientation sensor configured to determining an orientation of the component relative to the mounting surface. The orientation sensor may include a first sensor (e.g., a magnetometer, an accelerometer, a gyroscope, etc.) connected, at least indirectly, to the mounting surface, and a second sensor (e.g., a magnetometer, an accelerometer, a gyroscope, etc.) connected to move with the component. The orientation sensor may include an electronic controller. The electronic controller may be configured to compare first information from the first sensor to second information from the second sensor to determine the orientation of the component relative to the mounting surface.

    Enhanced threshold voltage defined logic family

    公开(公告)号:US11271569B2

    公开(公告)日:2022-03-08

    申请号:US17136887

    申请日:2020-12-29

    IPC分类号: H03K19/20 H03K19/0944

    摘要: The present disclosure describes systems, apparatuses, and methods for implementing a logic gate circuit structure for operating one or more Boolean functions. Instead of stacking transistors in series to accommodate an increased number of inputs, a parallel configuration is presented that significantly reduces the cascaded number of transistors and the total number of transistors for the same functionality.

    PSEUDO-COMPLEMENTARY LOGIC NETWORK

    公开(公告)号:US20220069821A1

    公开(公告)日:2022-03-03

    申请号:US17298917

    申请日:2019-12-09

    IPC分类号: H03K19/0944

    摘要: A pseudo-complementary logic network according to this embodiment includes a first logic stage including a first pull-up circuit of an N-type transistor and a first pull-down circuit and a second logic stage including a second pull-up circuit and a second pull-down circuit of an N-type transistor, wherein an output signal of the second logic stage is provided as an input of the first pull-down circuit, and the first pull-up circuit includes the second pull-down circuit.

    Three-dimensional logic circuit
    10.
    发明授权

    公开(公告)号:US11228315B2

    公开(公告)日:2022-01-18

    申请号:US16947042

    申请日:2020-07-15

    摘要: Apparatus and associated methods related to a three-dimensional integrated logic circuit that includes a columnar active region. Within the columnar active region resides an interdigitated plurality of semiconductor columns and conductive columns. A plurality of transistors is vertically arranged along each semiconductor column, which extends from a bottom surface of the columnar logic region to a top surface of the columnar logic region. The plurality of transistors are electrically interconnected so as to perform a logic function and to generate a logic output signal at a logic output port in response to a logic input signal received at a logic input port. Each of the plurality of conductive columns is adjacent to at least one of the plurality of semiconductor columns and extends along a columnar axis to one or more interconnection layers at the top and/or bottom surfaces of the columnar active layer.