Abstract:
Embodiments of the present disclosure provide a method that comprises providing a first die having a surface comprising a bond pad to route electrical signals of the first die and attaching the first die to a layer of a substrate. The method further comprises forming one or more additional layers of the substrate to embed the first die in the substrate and coupling a second die to the one or more additional layers, the second die having a surface comprising a bond pad to route electrical signals of the second die. The second die is coupled to the one or more additional layers such that electrical signals are routed between the first die and the second die.
Abstract:
A class AB amplifier includes a first inductor (L1) having a first terminal in communication with a voltage source terminal (Vdd). A first transistor (T1) has a drain terminal in communication with a second terminal of the first inductor (L1). A second transistor (T2) has a source terminal in communication with a source terminal of the first transistor (T2). A second inductor (L2) has a first terminal in communication with a drain terminal of the second transistor (T2) and a second terminal in communication with a reference potential (Vss). The drain terminals of the first transistor (T1) and the second transistor (T2) are capacitively coupled (Ccm) together.
Abstract:
An integrated circuit comprises N plane-like metal layers, where N is an integer greater than one. A first plane-like metal layer includes M contact portions that communicate with the N plane-like metal layers, respectively, where M is an integer greater than one. The first plane-like metal layer and the N plane-like metal layers are located in separate planes. At least two of a first source, a first drain and a second source communicate with at least two of the N plane-like metal layers. A first gate is arranged between the first source and the first drain. A second gate is arranged between the first drain and the second source. The first and second gates define alternating first and second regions in the first drain, and wherein the first and second gates are arranged farther apart in the first regions than in the second regions.
Abstract:
A system includes a control module, a network interface module, and a charging module. The control module stores a first set of charging parameters for charging a battery in a vehicle. The network interface module transmits the first set of charging parameters to a utility company and receives a reply from the utility company. The control module generates a charge control signal based on the reply and the first set of charging parameters. The charging module charges the battery of the vehicle based on the charge control signal.
Abstract:
A Colpitts oscillator includes a tank circuit, a. first transistor, and a first feedback circuit. The first transistor includes a drain, a source and a gate. The drain is coupled to the tank circuit. The first feedback circuit couples the source to the gate of the first transistor.
Abstract:
A control system for a rotating data storage device, comprises a drive printed circuit board (PCB). A drive module is arranged on the drive PCB and at least one of processes data, stores data and controls operation of the rotating storage device. An audio monitoring module communicates with the drive module and analyzes audio signals that are based on noise generated by the rotating storage device during operation.
Abstract:
A data storage system for a device including low power and high power modes comprises low power (LP) nonvolatile memory that includes a LP hard disk drive (HDD) having a non-volatile semiconductor memory interface, wherein said LP HDD communicates with said device via said non-volatile semiconductor memory interface. High power (HP) nonvolatile memory communicates with said device.
Abstract:
An integrated circuit comprises N plane-like metal layers, where N is an integer greater than one. A first plane-like metal layer includes M contact portions that communicate with the N plane-like metal layers, respectively, where M is an integer greater than one. The first plane-like metal layer and the N plane-like metal layers are located in separate planes. At least two of a first source, a first drain and a second source communicate with at least two of the N plane-like metal layers. A first gate is arranged between the first source and the first drain. A second gate is arranged between the first drain and the second source. The first and second gates define alternating first and second regions in the first drain, and wherein the first and second gates are arranged farther apart in the first regions than in the second regions.
Abstract:
A system on chip comprises N components, where N is an integer greater than one, and a storage module. The storage module comprises a first memory, a control module, and a connection module. The first memory includes M blocks of static random access memory, where M is an integer greater than one. The control module generates a first assignment of the M blocks to the N components during a first period and generates a second assignment of the M blocks to the N components during a second period. The first and second assignments are different. The connection module dynamically connects the M blocks to the N components based on the first and second assignments.
Abstract:
A system includes a control module, a network interface module, and a charging module. The control module stores a first set of charging parameters for charging a battery in a vehicle. The network interface module transmits the first set of charging parameters to a utility company and receives a reply from the utility company. The control module generates a charge control signal based on the reply and the first set of charging parameters. The charging module charges the battery of the vehicle based on the charge control signal.