公开(公告)号：WO2020047381A1

公开(公告)日：2020-03-05

申请号：PCT/US2019/049008

申请日：2019-08-30

Applicant: BOURNS, INC.

Inventor： CASEY, Kelly ,  BOURNS, Gordon L.

IPC: H01C7/12 ,  H01T1/14

Abstract: Integrated device having GDT and MOV functionalities. In some embodiments, an electrical device can include a first layer and a second layer joined with an interface, with each having an outer surface and an inner surface, such that the inner surfaces of the first and second layers define a sealed chamber therebetween. The electrical device can further include an outer electrode implemented on the outer surface of each of the first and second layers, and an inner electrode implemented on the inner surface of each of the first and second layers. The first layer can include a metal oxide material such that the first outer electrode, the first layer, and the first inner electrode provide a metal oxide varistor (MOV) functionality, and the first inner electrode, the second inner electrode, and the sealed chamber provide a gas discharge tube (GDT) functionality.

公开(公告)号：WO2018053208A1

公开(公告)日：2018-03-22

申请号：PCT/US2017/051673

申请日：2017-09-14

Applicant: SKYWORKS SOLUTIONS, INC.

Inventor： NGUYEN, Hoang Mong ,  LOBIANCO, Anthony James

IPC: H01L23/552 ,  H01L23/60 ,  H01L23/28 ,  H01L25/065 ,  H01L21/56

Abstract: Through-mold features for shielding applications. In some embodiments, a packaged module can include a packaging substrate having a ground plane, and one or more contact pads implemented on an upper side and electrically connected to the ground plane. The module can further include a radio-frequency circuit assembly implemented on the upper side of the packaging substrate, and an overmold implemented on the upper side of the packaging substrate to cover the one or more contact pads and the radio-frequency circuit assembly. The module can further include a conductive layer configured to cover an upper surface of the overmold and one or more through-mold features, with each being configured to provide an electrical connection between the conductive layer and the ground plane through the corresponding contact pad, to thereby provide shielding between a first location within the module and a second location relative to the module.

Abstract translation:

用于屏蔽应用的透模特征。 在一些实施例中，封装模块可以包括具有接地平面的封装衬底以及在上侧实现并电连接到接地平面的一个或多个接触焊盘。 该模块还可以包括在封装衬底的上侧上实现的射频电路组件以及在封装衬底的上侧上实施的覆盖模件，以覆盖一个或多个接触焊盘和射频电路组件。 该模块可进一步包括被配置为覆盖包覆模的上表面的导电层以及一个或多个通模特征，其中每个被配置为通过相应的接触垫在导电层和接地平面之间提供电连接， 从而在模块内的第一位置和相对于模块的第二位置之间提供屏蔽。

公开(公告)号：WO2016183146A1

公开(公告)日：2016-11-17

申请号：PCT/US2016/031773

申请日：2016-05-11

Applicant: SKYWORKS SOLUTIONS, INC.

Inventor： MASON, Jerod F. ,  WHITEFIELD, David Scott ,  BARTLE, Dylan Charles

IPC: H01L27/12 ,  H01L29/06 ,  H01L29/78 ,  H01L21/762

CPC classification number: H01L27/1203 ,  H01L21/6835 ,  H01L21/76251 ,  H01L21/84 ,  H01L23/535 ,  H01L23/66 ,  H01L24/48 ,  H01L24/49 ,  H01L29/1087 ,  H01L29/78603 ,  H01L29/78648 ,  H01L29/78654 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68368 ,  H01L2224/05554 ,  H01L2224/48091 ,  H01L2224/48106 ,  H01L2224/48229 ,  H01L2224/49171 ,  H01L2924/00014 ,  H01L2924/10253 ,  H01L2924/13091 ,  H01L2924/1421 ,  H04B1/44 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2224/45099

Abstract: Silicon-on-insulator (SOI) devices having contact layer. In some embodiments, a radio-frequency (RF) device can include a field-effect transistor (FET) implemented over a substrate layer, and an insulator layer implemented between the FET and the substrate layer. The RF device can further include a contact layer implemented between the insulator layer and the substrate layer to allow adjustment of RF performance of the FET. In some embodiments, such an RF device can be implemented as an RF switch in various products such as a die, a packaged module, and a wireless device.

Abstract translation: 具有接触层的绝缘体上硅（SOI）器件。 在一些实施例中，射频（RF）器件可以包括在衬底层上实现的场效应晶体管（FET），以及在FET和衬底层之间实现的绝缘体层。 RF器件还可以包括实现在绝缘体层和衬底层之间的接触层，以允许调节FET的RF性能。 在一些实施例中，这样的RF设备可以被实现为诸如管芯，封装模块和无线设备的各种产品中的RF开关。

公开(公告)号：WO2016131029A1

公开(公告)日：2016-08-18

申请号：PCT/US2016/017917

申请日：2016-02-13

Applicant: SKYWORKS SOLUTIONS, INC.

Inventor： LEHTOLA, Philip John

IPC: H03F1/02 ,  H03F1/22 ,  H03F3/68

CPC classification number: H03F3/211 ,  H03F1/0261 ,  H03F1/0288 ,  H03F1/22 ,  H03F1/565 ,  H03F3/195 ,  H03F3/24 ,  H03F3/245 ,  H03F2200/451 ,  H04B2001/0408

Abstract: Power amplifier having staggered cascode layout for enhanced thermal ruggedness. In some embodiments, a radio-frequency (RF) amplifier such as a power amplifier (PA) can be configured to receive and amplify an RF signal. The PA can include an array of cascoded devices connected electrically parallel between an input node and an output node. Each cascoded device can include a common emitter transistor and a common base transistor arranged in a cascode configuration. The array can be configured such that the common base transistors are positioned in a staggered orientation relative to each other.

Abstract translation: 功率放大器具有交错的共源共栅布局，以提高散热耐久性。 在一些实施例中，诸如功率放大器（PA）的射频（RF）放大器可被配置为接收和放大RF信号。 PA可以包括在输入节点和输出节点之间电并联连接的并联装置阵列。 每个级联设备可以包括公共发射极晶体管和以共源共栅配置布置的公共基极晶体管。 阵列可以被配置为使得公共基极晶体管相对于彼此以交错方向定位。

公开(公告)号：WO2016131027A1

公开(公告)日：2016-08-18

申请号：PCT/US2016/017914

申请日：2016-02-13

Applicant: SKYWORKS SOLUTIONS, INC.

Inventor： LEHTOLA, Philip, John ,  RIPLEY, David, Steven

IPC: H03F1/02 ,  H03F1/22 ,  H03F3/68

CPC classification number: H03F1/0288 ,  H03F1/22 ,  H03F3/19 ,  H03F3/211 ,  H03F3/245 ,  H03F3/72 ,  H03F2200/111 ,  H03F2200/451 ,  H03F2200/555 ,  H03F2203/7209

Abstract: According to some implementations, a power amplifier (PA) includes a common emitter configured to receive a radio-frequency (RF) signal. The PA also includes a carrier amplifier coupled to the common emitter to form a carrier cascode configuration, a collector of the carrier amplifier provided with a first supply voltage. The PA further includes a peaking amplifier coupled to the common emitter to form a peaking cascode configuration, a collector of the peaking amplifier provided with a second supply voltage greater than the first supply voltage.

Abstract translation: 根据一些实现方式，功率放大器（PA）包括被配置为接收射频（RF）信号的公共发射器。 PA还包括耦合到共发射极以形成载流子共源共栅配置的载波放大器，载体放大器的集电极设置有第一电源电压。 PA还包括耦合到共发射极的峰化放大器以形成峰值共源共栅结构，峰值放大器的集电极具有大于第一电源电压的第二电源电压。

公开(公告)号：WO2016070159A1

公开(公告)日：2016-05-06

申请号：PCT/US2015/058524

申请日：2015-10-31

Applicant: SKYWORKS SOLUTIONS, INC.

Inventor： PEHLKE, David, Richard ,  KING, Joel, Richard

IPC: H04B7/04 ,  H04B1/48

CPC classification number: H04B1/40 ,  H04B7/0693 ,  H04B7/0877

Abstract: Uplink diversity and interband uplink carrier aggregation in front-end architecture. In some embodiments, a radio-frequency (RF) front-end architecture can include a first transmit/receive (Tx/Rx) front-end system configured to operate with a first antenna, and a second Tx/Rx front-end system configured to operate with a second antenna. The second Tx/Rx front-end system can be a substantial duplicate of the first Tx/Rx front-end system to provide, for example, uplink (UL) diversity functionality and UL multiple-input-and-multiple-output (MIMO) functionality.

Abstract translation: 前端架构中上行链路分集和带间上行载波聚合。 在一些实施例中，射频（RF）前端架构可以包括被配置为与第一天线一起操作的第一发射/接收（Tx / Rx）前端系统和配置的第二Tx / Rx前端系统 使用第二个天线进行操作。 第二Tx / Rx前端系统可以是第一Tx / Rx前端系统的实质副本，以提供例如上行链路（UL）分集功能和UL多输入多输出（MIMO） 功能。

公开(公告)号：WO2015191928A1

公开(公告)日：2015-12-17

申请号：PCT/US2015/035434

申请日：2015-06-11

Applicant: SKYWORKS SOLUTIONS, INC.

Inventor： LEE, Junhyung

IPC: H03K17/687 ,  H04B1/44

CPC classification number: H04B1/44 ,  H03K17/063 ,  H03K17/102 ,  H03K17/122 ,  H03K17/161 ,  H03K17/693 ,  H03K2017/066 ,  H04B7/0831 ,  H04B15/00

Abstract: Parasitic compensation for radio-frequency (RF) switch applications. In some embodiments, a switching architecture can include a switch network having one or more switchable RF signal paths, where each path contributes to a parasitic effect associated with the switch network. The switching architecture can further include a parasitic compensation circuit coupled to a node of the switch network. The parasitic compensation circuit can be configured to compensate for the parasitic effect of the switch network. In some embodiments, the parasitic compensation circuit can be configured to provide adjustable compensation for the parasitic effect of the switch network.

Abstract translation: 射频（RF）开关应用的寄生补偿。 在一些实施例中，交换架构可以包括具有一个或多个可切换RF信号路径的交换机网络，其中每个路径有助于与交换机网络相关联的寄生效应。 交换结构还可以包括耦合到交换机网络的节点的寄生补偿电路。 寄生补偿电路可以配置为补偿开关网络的寄生效应。 在一些实施例中，寄生补偿电路可以被配置为为开关网络的寄生效应提供可调整的补偿。

公开(公告)号：WO2015184233A1

公开(公告)日：2015-12-03

申请号：PCT/US2015/033136

申请日：2015-05-29

Applicant: SKYWORKS SOLUTIONS, INC.

Inventor： LEHTOLA, Philip John ,  KAY, Andrew Martin

IPC: H04B1/38 ,  H03F1/30

CPC classification number: H03H7/40 ,  H01Q1/50 ,  H03F1/30 ,  H03F1/56 ,  H03F1/565 ,  H03F3/19 ,  H03F3/195 ,  H03F3/245 ,  H03F3/68 ,  H03F2200/111 ,  H03F2200/387 ,  H03F2200/447 ,  H03F2200/451 ,  H03H7/38 ,  H03H7/54

Abstract: Temperature compensated circuits for radio-frequency (RF) devices. In some embodiments, an RF circuit can include an input node and a plurality of components interconnected to the input node and configured to yield an impedance for an RF signal at the input node. At least one of the plurality of components can be configured to have temperature-dependence within a temperature range so that the impedance varies to compensate for an effect of temperature change. Such an RF circuit can be, for example, an impedance matching circuit implemented at an output of a power amplifier. The component having temperature-dependence can include a temperature-dependent capacitor such as a ceramic capacitor.

Abstract translation: 射频（RF）器件的温度补偿电路。 在一些实施例中，RF电路可以包括输入节点和互连到输入节点的多个组件，并且被配置为产生输入节点处的RF信号的阻抗。 多个部件中的至少一个可以被配置为在温度范围内具有温度依赖性，使得阻抗变化以补偿温度变化的影响。 这样的RF电路可以是例如在功率放大器的输出端实现的阻抗匹配电路。 具有温度依赖性的部件可以包括诸如陶瓷电容器的温度依赖性电容器。

公开(公告)号：WO2015161026A1

公开(公告)日：2015-10-22

申请号：PCT/US2015/026089

申请日：2015-04-16

Applicant: SKYWORKS SOLUTIONS, INC.

Inventor： MASON, Jerod F. ,  BARTLE, Dylan Charles ,  WHITEFIELD, David Scott ,  GUNES, Dogan ,  DICARLO, Paul T. ,  PETZOLD, David T.

IPC: H01H59/00 ,  B81B3/00

CPC classification number: B81B7/0041 ,  B81B2201/014 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/0271 ,  B81B2201/0292 ,  B81B2207/11 ,  B81C1/00293 ,  H01H59/00

Abstract: Microelectromechanical systems (MEMS) having contaminant control features. In some embodiments, a MEMS die can include a substrate and an electromechanical assembly implemented on the substrate. The MEMS die can further include a contaminant control component implemented relative to the electromechanical assembly. The contaminant control component can be configured to move contaminants relative to the electromechanical assembly. For example, such contaminants can be moved away from the electromechanical assembly.

Abstract translation: 具有污染控制特征的微机电系统（MEMS）。 在一些实施例中，MEMS管芯可以包括衬底和在衬底上实现的机电组件。 MEMS管芯还可以包括相对于机电组件实现的污染物控制部件。 污染物控制部件可以配置成相对于机电组件移动污染物。 例如，这种污染物可以从机电组件移开。

公开(公告)号：WO2014164925A1

公开(公告)日：2014-10-09

申请号：PCT/US2014/023806

申请日：2014-03-11

Applicant: BOURNS, INC.

Inventor： BOURNS, Gordon L. ,  KELLY, John ,  CHOW, Andy ,  KU, Chi-Hao ,  MEIJER, Lars Erik Gunnar

IPC: H01F10/28 ,  H01F41/14

CPC classification number: H01F27/2804 ,  H01F17/0013 ,  H01F17/0033 ,  H01F27/255 ,  H01F27/29 ,  H01F41/041 ,  H01F2027/2809 ,  Y10T29/49004 ,  Y10T29/4902

Abstract: Disclosed are devices and methods related to laminated polymeric planar magnetics. In some embodiments, a magnetic device can have a base layer including a polymeric laminate layer. The base layer can further include a set of one or more conductive ribbons implemented on a first side of the polymeric laminate layer. The base layer can have a perimeter that includes at least one cut edge. The magnetic device can further include a structure implemented on the base layer. The structure can include a set of one or more conductor features implemented on a side away from the base layer. The structure can have a perimeter that includes an edge set inward from the cut edge by an amount sufficient to allow a cutting operation that cuts the polymeric laminate layer to yield the cut edge.

Abstract translation: 公开了与层压聚合物平面磁性相关的装置和方法。 在一些实施例中，磁性装置可以具有包括聚合层压层的基层。 基层还可以包括在聚合物层压层的第一侧上实现的一组或多个导电带。 基层可以具有包括至少一个切割边缘的周边。 磁性器件还可以包括在基底层上实施的结构。 该结构可以包括在远离基层的一侧实现的一组或多个导体特征。 该结构可以具有包括从切割边缘向内设置的边缘的边缘，其量足以允许切割聚合物层压层以产生切割边缘的切割操作。