公开(公告)号：WO2013188694A1

公开(公告)日：2013-12-19

申请号：PCT/US2013/045720

申请日：2013-06-13

Applicant: SKYWORKS SOLUTIONS, INC.

Inventor： RIPLEY, David, Steven ,  LEHTOLA, Philip, John ,  ZAMPARDI, Peter, J. ,  SHAO, Hongxiao ,  KO, Tin, Myint ,  OZALAS, Matthew, Thomas

IPC: H03F1/30 ,  H03F3/19

CPC classification number: H03F3/195 ,  H01L21/8252 ,  H01L23/552 ,  H01L23/66 ,  H01L25/16 ,  H01L27/0605 ,  H01L27/0658 ,  H01L29/20 ,  H01L29/7304 ,  H01L29/7371 ,  H01L29/8605 ,  H01L2223/6611 ,  H01L2223/665 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2924/1305 ,  H01L2924/19107 ,  H01L2924/3025 ,  H03F1/302 ,  H03F3/191 ,  H03F3/21 ,  H03F3/211 ,  H03F3/213 ,  H03F2200/18 ,  H03F2200/318 ,  H03F2200/411 ,  H03F2200/555 ,  H04B1/3827 ,  H04B1/40 ,  H01L2924/00014 ,  H01L2924/00

Abstract: The present disclosure relates to a system for biasing a power amplifier. The system can include a first die that includes a power amplifier circuit and a passive component having an electrical property that depends on one or more conditions of the first die. Further, the system can include a second die including a bias signal generating circuit that is configured to generate a bias signal based at least in part on measurement of the electrical property of the passive component of the first die.

Abstract translation: 本公开涉及一种用于偏置功率放大器的系统。 该系统可以包括第一管芯，其包括功率放大器电路和具有取决于第一管芯的一个或多个条件的电特性的无源部件。 此外，该系统可以包括第二管芯，其包括偏置信号产生电路，该偏置信号产生电路被配置为至少部分地基于第一管芯的无源部件的电性能的测量来产生偏置信号。

公开(公告)号：WO2016131027A1

公开(公告)日：2016-08-18

申请号：PCT/US2016/017914

申请日：2016-02-13

Applicant: SKYWORKS SOLUTIONS, INC.

Inventor： LEHTOLA, Philip, John ,  RIPLEY, David, Steven

IPC: H03F1/02 ,  H03F1/22 ,  H03F3/68

CPC classification number: H03F1/0288 ,  H03F1/22 ,  H03F3/19 ,  H03F3/211 ,  H03F3/245 ,  H03F3/72 ,  H03F2200/111 ,  H03F2200/451 ,  H03F2200/555 ,  H03F2203/7209

Abstract: According to some implementations, a power amplifier (PA) includes a common emitter configured to receive a radio-frequency (RF) signal. The PA also includes a carrier amplifier coupled to the common emitter to form a carrier cascode configuration, a collector of the carrier amplifier provided with a first supply voltage. The PA further includes a peaking amplifier coupled to the common emitter to form a peaking cascode configuration, a collector of the peaking amplifier provided with a second supply voltage greater than the first supply voltage.

Abstract translation: 根据一些实现方式，功率放大器（PA）包括被配置为接收射频（RF）信号的公共发射器。 PA还包括耦合到共发射极以形成载流子共源共栅配置的载波放大器，载体放大器的集电极设置有第一电源电压。 PA还包括耦合到共发射极的峰化放大器以形成峰值共源共栅结构，峰值放大器的集电极具有大于第一电源电压的第二电源电压。

公开(公告)号：WO2013188712A1

公开(公告)日：2013-12-19

申请号：PCT/US2013/045742

申请日：2013-06-13

Applicant: SKYWORKS SOLUTIONS, INC.

Inventor： CHEN, Howard, E. ,  GUO, Yifan ,  HOANG, Dinhphuoc, Vu ,  JANANI, Mehran ,  KO, Tin, Myint ,  LEHTOLA, Philip, John ,  LOBIANCO, Anthony, James ,  MODI, Hardik, Bhupendra ,  NGUYEN, Hoang, Mong ,  OZALAS, Matthew, Thomas ,  PETTY-WEEKS, Sandra, Louise ,  READ, Matthew, Sean ,  RIEGE, Jens, Albrecht ,  RIPLEY, David, Steven ,  SHAO, Hongxiao ,  SHEN, Hong ,  SUN, Weimin ,  SUN, Hsiang-Chih ,  WELCH, Patrick, Lawrence ,  ZAMPARDI, Peter, J., Jr. ,  ZHANG, Guohao

IPC: H03F1/30 ,  H03F3/189

CPC classification number: H03F1/0205 ,  H01L21/485 ,  H01L21/4853 ,  H01L21/4864 ,  H01L21/565 ,  H01L21/76898 ,  H01L21/78 ,  H01L21/8249 ,  H01L21/8252 ,  H01L22/14 ,  H01L23/3114 ,  H01L23/481 ,  H01L23/49811 ,  H01L23/49827 ,  H01L23/49838 ,  H01L23/49844 ,  H01L23/49861 ,  H01L23/49866 ,  H01L23/49894 ,  H01L23/50 ,  H01L23/522 ,  H01L23/552 ,  H01L23/66 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/85 ,  H01L24/97 ,  H01L27/0605 ,  H01L27/0623 ,  H01L27/092 ,  H01L29/0684 ,  H01L29/0821 ,  H01L29/0826 ,  H01L29/1004 ,  H01L29/20 ,  H01L29/205 ,  H01L29/36 ,  H01L29/66242 ,  H01L29/66863 ,  H01L29/737 ,  H01L29/7371 ,  H01L29/812 ,  H01L29/8605 ,  H01L2223/6611 ,  H01L2223/6616 ,  H01L2223/6644 ,  H01L2223/665 ,  H01L2223/6655 ,  H01L2224/05155 ,  H01L2224/05164 ,  H01L2224/05554 ,  H01L2224/05644 ,  H01L2224/45015 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48177 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/48611 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48655 ,  H01L2224/48664 ,  H01L2224/48811 ,  H01L2224/48816 ,  H01L2224/48844 ,  H01L2224/48847 ,  H01L2224/48855 ,  H01L2224/48864 ,  H01L2224/4903 ,  H01L2224/49111 ,  H01L2224/49176 ,  H01L2224/85205 ,  H01L2224/85207 ,  H01L2224/85411 ,  H01L2224/85416 ,  H01L2224/85444 ,  H01L2224/85455 ,  H01L2224/85464 ,  H01L2924/00011 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12033 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/13051 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/1421 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/19105 ,  H01L2924/19107 ,  H01L2924/3011 ,  H01L2924/30111 ,  H01L2924/3025 ,  H03F1/565 ,  H03F3/187 ,  H03F3/19 ,  H03F3/195 ,  H03F3/21 ,  H03F3/213 ,  H03F3/245 ,  H03F3/347 ,  H03F3/45 ,  H03F3/60 ,  H03F2200/387 ,  H03F2200/451 ,  H03F2200/48 ,  H03F2200/555 ,  H01L2924/00 ,  H01L2924/00014

Abstract: A power amplifier module includes a power amplifier including a GaAs bipolar transistor having a collector, a base abutting the collector, and an emitter, the collector having a doping concentration of at least about 3x10 16 cm -3 at a junction with the base, the collector also having at least a first grading in which doping concentration increases away from the base; and an RF transmission line driven by the power amplifier, the RF transmission line including a conductive layer and finish plating on the conductive layer, the finish plating including a gold layer, a palladium layer proximate the gold layer, and a diffusion barrier layer proximate the palladium layer, the diffusion barrier layer including nickel and having a thickness that is less than about the skin depth of nickel at 0.9 GHz. Other embodiments of the module are provided along with related methods and components thereof.

Abstract translation: 功率放大器模块包括功率放大器，其包括具有集电极的GaAs双极晶体管，邻接集电极的基极和发射极，该集电极在与基极的接合处具有至少约3×10 16 cm -3的掺杂浓度，集电极 还具有至少一种其中掺杂浓度从基底增加的第一分级; 以及由功率放大器驱动的RF传输线，RF传输线包括在导电层上的导电层和精整电镀，精加工镀层包括金层，接近金层的钯层和靠近金层的扩散阻挡层 钯层，扩散阻挡层包括镍，并且其厚度小于0.9GHz处的镍的趋肤深度。 模块的其他实施例与其相关方法和组件一起提供。