公开(公告)号：WO2008109240A1

公开(公告)日：2008-09-12

申请号：PCT/US2008/054027

申请日：2008-02-14

Applicant: LAM RESEARCH CORPORATION ,  SEXTON, Gregory, S. ,  BAILEY, Andrew, D. ,  KUTHI, Andras ,  KIM, Yunsang

Inventor： SEXTON, Gregory, S. ,  BAILEY, Andrew, D. ,  KUTHI, Andras ,  KIM, Yunsang

IPC: H01L21/3065

CPC classification number: H01L21/02087 ,  H01J37/32009 ,  H01J37/32082 ,  H01J37/32559 ,  H01J37/32642 ,  H01J37/32862 ,  H01L21/02057 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/32136

Abstract: The embodiments provide apparatus and methods for removal of etch byproducts, dielectric films and metal films near the substrate bevel edge, and chamber interior to avoid the accumulation of polymer byproduct and deposited films and to improve process yield. In an exemplary embodiment, a plasma processing chamber configured to clean a bevel edge of a substrate is provided. The plasma processing chamber includes a substrate support configured to receive the substrate. The plasma processing chamber also includes a bottom edge electrode surrounding the substrate support. The bottom edge electrode and the substrate support are electrically isolated from one another by a bottom dielectric ring. A surface of the bottom edge electrode facing the substrate is covered by a bottom thin dielectric layer. The plasma processing chamber further includes a top edge electrode surrounding a top insulator plate opposing the substrate support. The top edge electrode is electrically grounded. A surface of the top edge electrode facing the substrate is covered by a top thin dielectric layer. The top edge electrode and the bottom edge electrode oppose one another and are configured to generate a cleaning plasma to clean the bevel edge of the substrate.

Abstract translation: 这些实施例提供用于去除蚀刻副产物，电介质膜和金属膜附近的衬底斜面边缘的设备和方法，以及室内，以避免聚合物副产物和沉积膜的堆积并提高工艺产率。 在示例性实施例中，提供了构造成清洁基板的斜边缘的等离子体处理室。 等离子体处理室包括被配置为接收衬底的衬底支撑件。 等离子体处理室还包括围绕衬底支撑件的底部边缘电极。 底部边缘电极和基底支撑件通过底部介电环彼此电隔离。 面向基板的底部边缘电极的表面被底部薄的电介质层覆盖。 等离子体处理室还包括围绕与衬底支撑件相对的顶部绝缘体板的顶部边缘电极。 顶边电极电接地。 面向衬底的顶边电极的表面被顶部薄介电层覆盖。 顶边电极和下边缘电极彼此相对并且被配置为产生清洁等离子体以清洁衬底的斜边缘。

公开(公告)号：WO2008027216A3

公开(公告)日：2008-03-06

申请号：PCT/US2007/018270

申请日：2007-08-17

Applicant: LAM RESEARCH CORPORATION ,  DORDI, Yezdi ,  REDEKER, Fritz, C. ,  BOYD, John ,  THIE, William ,  ARUNAGIRI, Tiruchirapalli ,  HOWALD, Arthur, M. ,  YOON, Hyungsuk, Alexander ,  VERTOMMEN, Johan

Inventor： DORDI, Yezdi ,  REDEKER, Fritz, C. ,  BOYD, John ,  THIE, William ,  ARUNAGIRI, Tiruchirapalli ,  HOWALD, Arthur, M. ,  YOON, Hyungsuk, Alexander ,  VERTOMMEN, Johan

IPC: C23C16/00

Abstract: The embodiments provide processes and integrated systems that produce a metal-to-metal or a silicon-to-metal interface to enhance electro-migration performance, to provide lower metal resistivity, and to improve metal-to-metal or silicon-to-metal interfacial adhesion for copper interconnects. An exemplary method of preparing a substrate surface to selectively deposit a thin layer of a cobalt-alloy material on a copper surface of in an integrated system to improve electromigration performance of a copper interconnect is provided. The method includes removing contaminants and metal oxides from the substrate surface in the integrated system, and reconditioning the substrate surface using a reducing environment after removing contaminants and metal oxides in the integrated system. The method also includes selectively depositing the thin layer of cobalt-alloy material on the copper surface of the copper interconnect in the integrated system after reconditioning the substrate surface. System to practice the exemplary method described above are also provided.

公开(公告)号：WO2009097089A2

公开(公告)日：2009-08-06

申请号：PCT/US2009/000372

申请日：2009-01-16

Applicant: LAM RESEARCH CORPORATION ,  FANG, Tony ,  KIM, Yunsang ,  BAILEY, Andrew, D. ,  RIGOUTAT, Olivier

Inventor： FANG, Tony ,  KIM, Yunsang ,  BAILEY, Andrew, D. ,  RIGOUTAT, Olivier

IPC: H01L21/3065

CPC classification number: H01J37/32449 ,  H01J37/32091 ,  H01J2237/3341 ,  H01L21/02087

Abstract: The various embodiments provide apparatus and methods of removal of unwanted deposits near the bevel edge of substrates to improve process yield. The embodiments provide apparatus and methods with center and edge gas feeds as additional process knobs for selecting a most suitable bevel edge etching processes to push the edge exclusion zone further outward towards the edge of substrates. Further the embodiments provide apparatus and methods with tuning gas(es) to change the etching profile at the bevel edge and using a combination of center and edge gas feeds to flow process and tuning gases into the chamber. Both the usage of tuning gas and location of gas feed(s) affect the etching characteristics at bevel edge. Total gas flow, gap distance between the gas delivery plate and substrate surface, pressure, and types of process gas(es) are also found to affect bevel edge etching profiles.

Abstract translation: 各种实施例提供了去除衬底的斜面边缘附近的不需要的沉积物的设备和方法，以提高工艺产量。 这些实施例提供了具有中心和边缘气体供给装置和方法的设备和方法作为附加工艺旋钮，用于选择最合适的斜面边缘蚀刻工艺以将边缘禁区进一步向外推向基板的边缘。 此外，实施例提供了利用调谐气体来改变斜面边缘处的蚀刻轮廓并且使用中心和边缘气体供给的组合来流动过程并将气体调节到腔室中的装置和方法。 调谐气体的使用和气体供给的位置都影响斜面边缘处的蚀刻特性。 还发现总气体流量，气体输送板和基材表面之间的间隙距离，压力和工艺气体类型会影响斜面边缘蚀刻轮廓。

公开(公告)号：WO2009078968A1

公开(公告)日：2009-06-25

申请号：PCT/US2008/013696

申请日：2008-12-12

Applicant: LAM RESEARCH CORPORATION ,  MUI, David, S., L. ,  SRINIVASAN, Satish ,  PENG, Grant ,  ZHU, Ji ,  KON, Shih-Chung ,  PODLESNIK, Dragan ,  MENDIRATTA, Arjun

Inventor： MUI, David, S., L. ,  SRINIVASAN, Satish ,  PENG, Grant ,  ZHU, Ji ,  KON, Shih-Chung ,  PODLESNIK, Dragan ,  MENDIRATTA, Arjun

IPC: H01L21/302 ,  H01L21/304

CPC classification number: C11D7/5009 ,  C11D3/3723 ,  C11D3/3765 ,  C11D3/3773 ,  C11D7/261 ,  C11D7/3263 ,  C11D7/34 ,  C11D11/0047 ,  H01L21/02057 ,  H01L21/67051 ,  Y10S134/902

Abstract: The embodiments of the present invention provide methods for cleaning patterned substrates with fine features. The methods for cleaning patterned substrate have advantages in cleaning patterned substrates with fine features without substantially damaging the features by using the cleaning materials described. The cleaning materials are fluid, either in liquid phase, or in liquid/gas phase, and deform around device features; therefore, the cleaning materials do not substantially damage the device features or reduce damage all together. The cleaning materials containing polymers of a polymeric compound with large molecular weight capture the contaminants on the substrate. In addition, the cleaning materials entrap the contaminants and do not return the contaminants to the substrate surface. The polymers of one or more polymeric compounds with large molecular weight form long polymer chains, which can also be cross-linked to form a network (or polymeric network). The long polymer chains and/or polymer network show superior capabilities of capturing and entrapping contaminants, in comparison to conventional cleaning materials.

Abstract translation: 本发明的实施例提供了用于清洁具有精细特征的图案化衬底的方法。 用于清洁图案化衬底的方法具有通过使用所述清洁材料来清洁具有精细特征的图案化衬底而不会基本上损坏特征的优点。 清洁材料是流体，液相或液相/气相，并围绕装置特征变形; 因此，清洁材料基本上不会损坏设备特征或将损伤全部降低在一起。 包含具有大分子量的聚合物的聚合物的清洁材料捕获基底上的污染物。 此外，清洁材料夹带污染物并且不会将污染物返回到基底表面。 一种或多种具有大分子量的聚合物的聚合物形成长的聚合物链，其也可以交联以形成网络（或聚合物网络）。 与传统清洁材料相比，长的聚合物链和/或聚合物网络显示出捕获和捕获污染物的优异性能。

公开(公告)号：WO2008109239A1

公开(公告)日：2008-09-12

申请号：PCT/US2008/054025

申请日：2008-02-14

Applicant: LAM RESEARCH CORPORATION ,  SEXTON, Gregory, S. ,  BAILEY, Andrew, D. ,  KUTHI, Andras

Inventor： SEXTON, Gregory, S. ,  BAILEY, Andrew, D. ,  KUTHI, Andras

IPC: H01L21/3065

CPC classification number: H01L21/02087 ,  B08B7/0035 ,  H01J37/32091 ,  H01J37/32174 ,  H01J37/32541 ,  H01L21/67069

Abstract: The embodiments provide structures and mechanisms for removal of etch byproducts, dielectric films and metal films on and near the substrate bevel edge, and chamber interior to avoid the accumulation of polymer byproduct and deposited films and to improve process yield. In an exemplary embodiment, a plasma processing chamber configured to clean a bevel edge of a substrate is provided. The plasma processing chamber includes a bottom electrode configured to receive the substrate, wherein the bottom electrode is coupled to a radio frequency (RF) power supply. The plasma processing chamber also includes a top edge electrode surrounding an insulating plate opposing the bottom electrode. The top edge electrode is electrically grounded. The plasma processing chamber further includes a bottom edge electrode surrounding the bottom electrode. The bottom edge electrode opposes the top edge electrode. The top edge electrode, the substrate disposed on the bottom electrode, and the bottom edge electrode are configured to generate a cleaning plasma to clean the bevel edge of the substrate. The bottom edge electrode and the bottom electrode are electrically coupled to one another through an RF circuit tunable to adjust the amount of RF current going between the substrate disposed on the bottom electrode, the bottom edge electrode and the top edge electrode.

Abstract translation: 这些实施例提供用于去除基板斜边缘上和附近的蚀刻副产物，电介质膜和金属膜的结构和机构，以及室内，以避免聚合物副产物和沉积膜的积聚并提高工艺产率。 在示例性实施例中，提供了构造成清洁基板的斜边缘的等离子体处理室。 等离子体处理室包括被配置为接收衬底的底部电极，其中底部电极耦合到射频（RF）电源。 等离子体处理室还包括围绕与底部电极相对的绝缘板的顶部边缘电极。 顶边电极电接地。 等离子体处理室还包括围绕底部电极的底部边缘电极。 底边电极与顶边缘电极相对。 上边缘电极，设置在底部电极上的基板和底部边缘电极被配置为产生清洁等离子体以清洁基板的斜边缘。 底边电极和底电极通过可调谐的RF电路彼此电耦合，以调节在设置在底部电极，底部边缘电极和顶部边缘电极之间的衬底之间的RF电流的量。

公开(公告)号：WO2008033234A2

公开(公告)日：2008-03-20

申请号：PCT/US2007/019231

申请日：2007-08-30

Applicant: LAM RESEARCH CORPORATION ,  GAFF, Keith

Inventor： GAFF, Keith

IPC: H01L21/66

CPC classification number: H01L21/67248 ,  G01K11/20

Abstract: Broadly speaking, the embodiments of the present invention fill the need by providing in-situ wafer temperature measuring method and apparatus. The in-situ substrate temperature measuring method and apparatus provide instant wafer temperature information to allow for continuous monitoring of the etching process. The method and apparatus also allow for instant substrate temperature control to tighten wafer-to-wafer and chamber-to- chamber process distribution. An exemplary cluster tool system is provided. The cluster tool system includes a substrate holding station for holding a substrate capable of emitting signals indicative of substrate temperature, and a processing chamber, the processing chamber being configured to receive the substrate from the substrate holding station and to run.through an active process operation when the substrate is in the processing chamber. The cluster tool system also includes a signal detector for detecting the signals emitted by the substrate when the processing chamber runs through the active process operation, the signal detector being configured to collect the emitted signals indicative of the substrate temperature.

Abstract translation: 一般而言，本发明的实施例通过提供原位晶片温度测量方法和装置来满足需要。 原位衬底温度测量方法和设备提供即时晶片温度信息以允许连续监测蚀刻过程。 该方法和装置还允许即时衬底温度控制以收紧晶片 - 晶片和室 - 室处理分布。 提供了示例性的群集工具系统。 该群集工具系统包括用于保持能够发射指示衬底温度的信号的衬底的衬底保持站和处理室，处理室被配置为从衬底保持站接收衬底并且通过主动处理操作 当衬底在处理室中时。 该群集工具系统还包括信号检测器，用于当处理室运行通过有效处理操作时检测由衬底发射的信号，信号检测器被配置为收集指示衬底温度的发射信号。

公开(公告)号：WO2008027215A2

公开(公告)日：2008-03-06

申请号：PCT/US2007/018254

申请日：2007-08-17

Applicant: LAM RESEARCH CORPORATION ,  YOON, Hyungsuk, Alexander ,  BOYD, John, M. ,  KOROLIK, Mikhail ,  DORDI, Yezdi ,  REDEKER, Fritz, C.

Inventor： YOON, Hyungsuk, Alexander ,  BOYD, John, M. ,  KOROLIK, Mikhail ,  DORDI, Yezdi ,  REDEKER, Fritz, C.

IPC: B05D5/12 ,  C23C16/00 ,  B05D3/00 ,  C23C14/00 ,  B05C13/02 ,  H05K3/00 ,  B29C71/04 ,  C23C14/32

CPC classification number: H01L21/67207 ,  C23C16/0227 ,  C23C16/452 ,  C23C16/45514 ,  C23C16/45517 ,  C23C16/45551 ,  C23C16/56 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76868

Abstract: The embodiments provide integrated apparatus and methods that perform substrate surface treatment and film deposition for copper interconnect with improved metal migration performance and reduced void propagation. In one exemplary embodiment, a chamber for performing surface treatment and film deposition is provided. The chamber includes a first proximity head for substrate surface treatment configured to dispense a first treatment gas to treat a portion of a surface of a substrate under the first proximity head for substrate surface treatment. The chamber also includes a first proximity head for atomic layer deposition (ALD) configured to sequentially dispensing a first reactant gas and a first purging gas to deposit a first ALD film under the second proximity head for ALD.

Abstract translation: 这些实施例提供对铜互连进行衬底表面处理和膜沉积的综合设备和方法，具有改善的金属迁移性能和减少的空隙传播。 在一个示例性实施例中，提供了用于进行表面处理和膜沉积的室。 腔室包括用于衬底表面处理的第一邻近头部，其构造成分配第一处理气体以处理第一邻近头部下方的衬底表面的一部分用于衬底表面处理。 该室还包括用于原子层沉积（ALD）的第一邻近头，其被配置成顺序地分配第一反应气体和第一吹扫气体，以将第一ALD膜沉积在ALD的第二接近头下方。

公开(公告)号：WO2007098071A3

公开(公告)日：2007-08-30

申请号：PCT/US2007/004225

申请日：2007-02-16

Applicant: LAM RESEARCH CORPORATION ,  DHINDSA, Rajinder ,  SRINIVASAN, Mukund

Inventor： DHINDSA, Rajinder ,  SRINIVASAN, Mukund

IPC: C23F1/00 ,  H01L21/306

Abstract: Broadly speaking, the embodiments of the present invention provides an improved plasma processing mechanism, apparatus, and method to increase the process uniformity at the very edge of the substrate. In an exemplary embodiment, a plasma processing chamber is provided. The plasma processing chamber includes a substrate support configured to receive a substrate. The plasma processing chamber also includes an annular ring having a plurality of gas channels defined therein. The annular ring is proximate to an outer edge of the substrate support and the annular ring is coupled to the substrate support. The plurality of gas channels is connected to an edge gas plenum surrounding the substrate support. The edge gas plenum is connected to a central gas plenum disposed within and near the center of the substrate support through a plurality of gas supply channels.

公开(公告)号：WO2007095388A2

公开(公告)日：2007-08-23

申请号：PCT/US2007/004235

申请日：2007-02-15

Applicant: LAM RESEARCHCORPORATION ,  DHINDSA, Rajinder

Inventor： DHINDSA, Rajinder

CPC classification number: H01J37/321 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/32642 ,  H01J37/32862

Abstract: Broadly speaking, the embodiments of the present invention provide an improved chamber cleaning mechanism, apparatus and method. The present invention can also be used to provide additional knobs to tune the etch processes. In one embodiment, a plasma processing chamber configured to generate a plasma includes a bottom electrode assembly with an inner bottom electrode and an outer bottom electrode disposed outside of the inner bottom electrode, wherein the inner bottom electrode is configured to receive a substrate. The plasma processing chamber also includes a top electrode assembly with a top electrode, wherein the top capacitive electrode is disposed directly above the inner and outer bottom electrodes.

Abstract translation: 广义而言，本发明的实施例提供了一种改进的室清洁机构，装置和方法。 本发明还可以用于提供附加的旋钮来调整蚀刻工艺。 在一个实施例中，构造成产生等离子体的等离子体处理室包括底部电极组件，其具有设置在内部底部电极外侧的内部底部电极和外部底部电极，其中内部底部电极构造成接收衬底。 等离子体处理室还包括具有顶部电极的顶部电极组件，其中顶部电容电极直接设置在内部和外部底部电极的上方。

公开(公告)号：WO2007078975A2

公开(公告)日：2007-07-12

申请号：PCT/US2006/048706

申请日：2006-12-19

Applicant: LAM RESEARCH CORPORATION ,  KOROLIK, Mikhail ,  FREER, Erik, M. ,  DE LARIOS, John, M. ,  MIKHAYLICHENKO, Katrina ,  RAVKIN, Mike ,  REDEKER, Fred

Inventor： KOROLIK, Mikhail ,  FREER, Erik, M. ,  DE LARIOS, John, M. ,  MIKHAYLICHENKO, Katrina ,  RAVKIN, Mike ,  REDEKER, Fred

IPC: B08B3/00 ,  B08B7/00 ,  C11D7/32

CPC classification number: C11D11/0047 ,  B08B7/02 ,  C11D1/146 ,  C11D3/2079 ,  C11D9/02 ,  C11D17/0013 ,  C11D17/0017 ,  C23G1/18 ,  G03F7/423 ,  H01L21/02052 ,  H01L21/31133 ,  H01L21/6708 ,  H01L21/67086

Abstract: Cleaning compounds, apparatus, and methods to remove contaminants from a substrate surface are provided. An exemplary cleaning compound to remove particulate contaminants from a semiconductor substrate surface is provided. The cleaning compound includes a viscous liquid with a viscosity between about 1 cP to about 10,000 cP. The cleaning compound also includes a plurality of solid components dispersed in the viscous liquid, the plurality of. solid components interact with the particulate contaminants on the substrate surface to remove the particulate contaminants from the substrate surface.

Abstract translation: 提供了清除化合物，设备和从基材表面除去污染物的方法。 提供了从半导体衬底表面去除颗粒污染物的示例性清洁化合物。 清洁化合物包括粘度在约1cP至约10,000cP之间的粘性液体。 清洁化合物还包括分散在粘稠液体中的多个固体成分，多个。 固体组分与基底表面上的颗粒污染物相互作用以从基底表面去除颗粒污染物。