公开(公告)号：WO2013012591A1

公开(公告)日：2013-01-24

申请号：PCT/US2012/045974

申请日：2012-07-09

Applicant: LAM RESEARCH CORPORATION ,  MARAKHTANOV, Alexei ,  ABATCHEV, Mirzafer, K. ,  DHINDSA, Rajinder ,  HUDSON, Eric ,  BAILEY, Andrew, D.

Inventor： MARAKHTANOV, Alexei ,  ABATCHEV, Mirzafer, K. ,  DHINDSA, Rajinder ,  HUDSON, Eric ,  BAILEY, Andrew, D.

IPC: H05H1/46

CPC classification number: H01L21/67069 ,  C23C14/345 ,  C23C16/505 ,  H01J37/32091 ,  H01J37/32137 ,  H01J2237/334 ,  H01J2237/3343 ,  H01J2237/3348 ,  H01L21/3065 ,  H01L21/31116 ,  H01L22/20 ,  H05H2001/4675

Abstract: Apparatus, methods, and computer programs for semiconductor processing in a capacitively-coupled plasma chamber are provided. A chamber includes a bottom radio frequency (RF) signal generator, a top RF signal generator, and an RF phase controller. The bottom RF signal generator is coupled to the bottom electrode in the chamber, and the top RF signal generator is coupled to the top electrode. Further, the bottom RF signal is set at a first phase, and the top RF signal is set at a second phase. The RF phase controller is operable to receive the bottom RF signal and operable to set the value of the second phase. Additionally, the RF phase controller is operable to track the first phase and the second phase to maintain a time difference between the maximum of the top RF signal and the minimum of the bottom RF signal at approximately a predetermined constant value, resulting in an increase of the negative ion flux to the surface of the wafer.

Abstract translation: 提供了在电容耦合等离子体室中用于半导体处理的装置，方法和计算机程序。 腔室包括底部射频（RF）信号发生器，顶部RF信号发生器和RF相位控制器。 底部RF信号发生器耦合到室中的底部电极，并且顶部RF信号发生器耦合到顶部电极。 此外，底部RF信号被设置在第一相位，并且顶部RF信号被设置在第二阶段。 RF相位控制器可操作以接收底部RF信号并且可操作以设置第二相位的值。 另外，RF相位控制器可操作以跟踪第一相位和第二相位，以保持最大RF信号的最大值与底部RF信号的最小值之间的时间差大约为预定的恒定值，导致增加 到晶片表面的负离子通量。

公开(公告)号：WO2012018449A2

公开(公告)日：2012-02-09

申请号：PCT/US2011/041524

申请日：2011-06-22

Applicant: LAM RESEARCH CORPORATION ,  DHINDSA, Rajinder ,  MARAKHATNOV, Alexei ,  BAILEY, Andrew, D. III

Inventor： DHINDSA, Rajinder ,  MARAKHATNOV, Alexei ,  BAILEY, Andrew, D. III

IPC: H01L21/205

CPC classification number: H01J37/32449 ,  H01J37/32091 ,  H01J37/32697 ,  H01J37/32715 ,  H01J37/32834 ,  H01L21/67069 ,  H01L21/67259 ,  H01L21/6831 ,  H01L22/26

Abstract: A semiconductor wafer processing apparatus includes a first electrode exposed to a first plasma generation volume, a second electrode exposed to a second plasma generation volume, and a gas distribution unit disposed between the first and second plasma generation volumes. The first electrode is defined to transmit radio frequency (RF) power to the first plasma generation volume, and distribute a first plasma process gas to the first plasma generation volume. The second electrode is defined to transmit RF power to the second plasma generation volume, and hold a substrate in exposure to the second plasma generation volume. The gas distribution unit includes an arrangement of through-holes defined to fluidly connect the first plasma generation volume to the second plasma generation volume. The gas distribution unit also includes an arrangement of gas supply ports defined to distribute a second plasma process gas to the second plasma generation volume.

Abstract translation: 半导体晶片处理设备包括暴露于第一等离子体产生体积的第一电极，暴露于第二等离子体产生体积的第二电极以及布置在第一和第二等离子体产生体积之间的气体分配单元 。 第一电极被定义为将射频（RF）功率发射到第一等离子体产生体积，并且将第一等离子体过程气体分配到第一等离子体产生体积。 第二电极被限定为将RF功率传输到第二等离子体产生体积，并且保持衬底暴露于第二等离子体产生体积。 气体分配单元包括被限定为将第一等离子体生成体积流体连接到第二等离子体生成体积的通孔的布置。 气体分配单元还包括气体供应端口的布置，其被限定为将第二等离子体处理气体分配到第二等离子体生成体积。

公开(公告)号：WO2012018448A2

公开(公告)日：2012-02-09

申请号：PCT/US2011/041522

申请日：2011-06-22

Applicant: LAM RESEARCH CORPORATION ,  DHINDSA, Rajinder ,  MARAKHATNOV, Alexei ,  BAILEY, Andrew, D. III

Inventor： DHINDSA, Rajinder ,  MARAKHATNOV, Alexei ,  BAILEY, Andrew, D. III

IPC: H01L21/205 ,  H01L21/3065

CPC classification number: H01L21/3065 ,  C23C16/4412 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/45576 ,  C23C16/50 ,  H01J37/32091 ,  H01J37/32449 ,  H01J37/32834 ,  H01L21/31

Abstract: An electrode is exposed to a plasma generation volume and is defined to transmit radiofrequency power to the plasma generation volume, and includes an upper surface for holding a substrate in exposure to the plasma generation volume. A gas distribution unit is disposed above the plasma generation volume and in a substantially parallel orientation to the electrode. The gas distribution unit includes an arrangement of gas supply ports for directing an input flow of a plasma process gas into the plasma generation volume in a direction substantially perpendicular to the upper surface of the electrode. The gas distribution unit also includes an arrangement of through-holes that each extend through the gas distribution unit to fluidly connect the plasma generation volume to an exhaust region. Each of the through-holes directs an exhaust flow from the plasma generation volume in a direction substantially perpendicular to the upper surface of the electrode.

Abstract translation: 电极暴露于等离子体产生体积，并且被定义为将射频功率传递到等离子体产生体积，并且包括用于保持衬底暴露于等离子体产生体积的上表面。 气体分布单元设置在等离子体产生体积之上并且基本上平行于电极的取向。 气体分配单元包括用于将等离子体处理气体的输入流在基本上垂直于电极的上表面的方向引导到等离子体产生体积中的气体供给端口的布置。 气体分配单元还包括通孔的布置，其各自延伸穿过气体分配单元以将等离子体产生体积流体连接到排气区域。 每个通孔在基本上垂直于电极的上表面的方向上引导来自等离子体产生体积的排气流。

公开(公告)号：WO2009137279A3

公开(公告)日：2010-02-04

申请号：PCT/US2009041730

申请日：2009-04-24

Applicant: LAM RES CORP ,  WONG SCOTT ,  LIN JEFFREY ,  BAILEY ANDREW D III ,  CHEN JACK ,  MOORING BENJAMIN W ,  HUANG CHUNG HO

Inventor： WONG SCOTT ,  LIN JEFFREY ,  BAILEY ANDREW D III ,  CHEN JACK ,  MOORING BENJAMIN W ,  HUANG CHUNG HO

IPC: H01L21/68

CPC classification number: H01L21/68

Abstract: Methods and systems to optimize wafer placement repeatability in semiconductor manufacturing equipment using a controlled series of wafer movements are provided. In one embodiment, a preliminary station calibration is performed to teach a robot position for each station interfaced to facets of a vacuum transfer module used in semiconductor manufacturing. The method also calibrates the system to obtain compensation parameters that take into account the station where the wafer is to be placed, position of sensors in each facet, and offsets derived from performing extend and retract operations of a robot arm. In another embodiment where the robot includes two arms, the method calibrates the system to compensate for differences derived from using one arm or the other. During manufacturing, the wafers are placed in the different stations using the compensation parameters.

Abstract translation: 提供了使用受控系列的晶片移动来优化半导体制造设备中的晶片布置重复性的方法和系统。 在一个实施例中，执行初步站校准以教导与用于半导体制造中的真空传递模块的面连接的每个站的机器人位置。 该方法还校准系统以获得考虑要放置晶片的工位的位置的补偿参数，每个面中的传感器的位置以及执行机器人臂的延伸和缩回操作导出的偏移。 在机器人包括两个臂的另一实施例中，该方法校准系统以补偿从使用一个臂或另一个臂导出的差异。 在制造期间，使用补偿参数将晶片放置在不同的台中。

公开(公告)号：WO2008042581B1

公开(公告)日：2008-12-11

申请号：PCT/US2007078578

申请日：2007-09-14

Applicant: LAM RES CORP ,  CHEN JACK ,  BAILEY ANDREW D III ,  MOORING BEN ,  CAIN STEPHEN J

Inventor： CHEN JACK ,  BAILEY ANDREW D III ,  MOORING BEN ,  CAIN STEPHEN J

IPC: G03B15/00 ,  B08B7/00 ,  B41B17/00 ,  G01B11/00 ,  G01B11/02 ,  G01N21/00 ,  G01R31/26 ,  G03B15/02 ,  G03B15/03

CPC classification number: H01L21/681 ,  H01L21/67259 ,  H01L21/67288

Abstract: A bevel inspection module for capturing images of a substrate is provided. The module includes a rotational motor, which is attached to a substrate chuck and is configured to rotate the substrate chuck thereby allowing the substrate to revolve. The module further includes a camera and an optic enclosure, which is attached to the camera and is configured to rotate, enabling light to be directed toward the substrate. The camera is mounted from a camera mount, which is configured to enable the camera to rotate on a 180 degree plane allowing the camera to capture images of at least one of a top view, a bottom view, and a side view of the substrate. The module yet also includes a backlight arrangement, which is configured to provide illumination to the substrate, thereby enabling the camera to capture the images, which shows contrast between the substrate and a background.

Abstract translation: 提供了一种用于捕获基板的图像的斜面检查模块。 模块包括旋转马达，其连接到基板卡盘并且构造成旋转基板卡盘，从而允许基板旋转。 该模块还包括照相机和光学外壳，其附接到相机并且被配置为旋转，使得光能够被引向基板。 照相机从照相机安装座安装，照相机安装件被配置为使照相机能够在180度平面上旋转，允许照相机拍摄基板的俯视图，底视图和侧视图中的至少一个的图像。 该模块还包括背光布置，其被配置为向基板提供照明，从而使得相机能够捕获显示基板和背景之间的对比度的图像。

公开(公告)号：WO2006081004B1

公开(公告)日：2008-10-30

申请号：PCT/US2005045729

申请日：2005-12-16

Applicant: LAM RES CORP ,  LOHOKARE SHRIKANT P ,  BAILEY ANDREW D III

Inventor： LOHOKARE SHRIKANT P ,  BAILEY ANDREW D III

IPC: H05H1/24 ,  C23C14/00 ,  H05K9/00

CPC classification number: H01J37/32633 ,  C23C16/4404 ,  H01J37/32623

Abstract: In a plasma processing system, a method of reducing byproduct deposits on a set of plasma chamber surfaces of a plasma processing chamber is disclosed. The method includes providing a deposition barrier in the plasma processing chamber, the deposition barrier is configured to be disposed in a plasma generating region of the plasma processing chamber, thereby permitting at least some process byproducts produced when a plasma is struck within the plasma processing chamber to adhere to the deposition barrier and reducing the byproduct deposits on the set of plasma processing chamber surfaces.

Abstract translation: 在等离子体处理系统中，公开了一种在等离子体处理室的一组等离子体室表面上减少副产物沉积的方法。 所述方法包括在所述等离子体处理室中设置沉积阻挡层，所述沉积阻挡层被配置为设置在所述等离子体处理室的等离子体产生区域中，从而允许在所述等离子体处理室内等离子体被击中时产生的至少一些过程副产物 以附着到沉积屏障上并减少等离子体处理室表面组上的副产物沉积物。

公开(公告)号：WO2006081004A3

公开(公告)日：2008-08-14

申请号：PCT/US2005045729

申请日：2005-12-16

Applicant: LAM RES CORP ,  LOHOKARE SHRIKANT P ,  BAILEY ANDREW D III

Inventor： LOHOKARE SHRIKANT P ,  BAILEY ANDREW D III

IPC: H05H1/24 ,  C23C14/00 ,  H05K9/00

CPC classification number: H01J37/32633 ,  C23C16/4404 ,  H01J37/32623

Abstract: In a plasma processing system, a method of reducing byproduct deposits on a set of plasma chamber surfaces of a plasma processing chamber is disclosed. The method includes providing a deposition barrier in the plasma processing chamber, the deposition barrier is configured to be disposed in a plasma generating region of the plasma processing chamber, thereby permitting at least some process byproducts produced when a plasma is struck within the plasma processing chamber to adhere to the deposition barrier and reducing the byproduct deposits on the set of plasma processing chamber surfaces.

Abstract translation: 在等离子体处理系统中，公开了一种减少等离子体处理室的一组等离子体室表面上的副产品沉积物的方法。 该方法包括在等离子体处理室中提供沉积屏障，沉积屏障被配置为设置在等离子体处理室的等离子体发生区域中，由此允许当在等离子体处理室内打击等离子体时产生至少一些处理副产物 附着于沉积屏障并减少在该组等离子体处理室表面上的副产物沉积物。

公开(公告)号：WO2006104842A2

公开(公告)日：2006-10-05

申请号：PCT/US2006/010577

申请日：2006-03-24

Applicant: LAM RESEARCH CORPORATION ,  BAILEY, Andrew, D, III

Inventor： BAILEY, Andrew, D, III

IPC: B25J18/00

CPC classification number: B25J5/00 ,  B08B1/00 ,  B08B9/00 ,  H01J37/32743 ,  H01J37/32862 ,  H01L21/67751 ,  Y10T29/49723

Abstract: A robot apparatus for executing a set of service procedures on a plasma processing system including a docking port is disclosed. The apparatus includes a platform and a docking probe coupled to the platform, wherein the docking probe is configured to dock with the docking port. The apparatus also includes a robot arm coupled to the platform, and further configured to substantially perform the set of service procedures, and a tool coupled to the robot arm. The apparatus further includes a computer coupled to the platform, wherein the computer is further configured to execute the set of service procedures, and wherein when the docking probe is docked to the docking port, the set of service procedures is performed by the tool.

Abstract translation: 公开了一种用于在包括对接端口的等离子体处理系统上执行一组服务程序的机器人装置。 该装置包括耦合到平台的平台和对接探针，其中对接探针配置成与对接端口对接。 该装置还包括耦合到平台的机器人臂，并且还被配置为基本上执行该组服务程序，以及联接到机器人手臂的工具。 该装置还包括耦合到平台的计算机，其中该计算机还被配置为执行该组服务过程，并且其中当该对接探针对接到对接端口时，该组服务过程由该工具执行。

公开(公告)号：WO2006081004A2

公开(公告)日：2006-08-03

申请号：PCT/US2005/045729

申请日：2005-12-16

Applicant: LAM RESEARCH CORPORATION ,  LOHOKARE, Shrikant, P. ,  BAILEY, Andrew, D, III

Inventor： LOHOKARE, Shrikant, P. ,  BAILEY, Andrew, D, III

IPC: H05H1/24 ,  C23C16/00

CPC classification number: H01J37/32633 ,  C23C16/4404 ,  H01J37/32623

Abstract: In a plasma processing system, a method of reducing byproduct deposits on a set of plasma chamber surfaces of a plasma processing chamber is disclosed. The method includes providing a deposition barrier in the plasma processing chamber, the deposition barrier is configured to be disposed in a plasma generating region of the plasma processing chamber, thereby permitting at least some process byproducts produced when a plasma is struck within the plasma processing chamber to adhere to the deposition barrier and reducing the byproduct deposits on the set of plasma processing chamber surfaces.

Abstract translation: 在等离子体处理系统中，公开了一种在等离子体处理室的一组等离子体室表面上减少副产物沉积的方法。 所述方法包括在所述等离子体处理室中设置沉积阻挡层，所述沉积阻挡层被配置为设置在所述等离子体处理室的等离子体产生区域中，从而允许在所述等离子体处理室内等离子体被击中时产生的至少一些过程副产物 以附着到沉积屏障上并减少等离子体处理室表面组上的副产物沉积物。

公开(公告)号：WO2006044722A3

公开(公告)日：2006-06-29

申请号：PCT/US2005037125

申请日：2005-10-12

Applicant: LAM RES CORP ,  HOWALD ARTHUR M ,  KUTHI ANDRAS ,  BAILEY ANDREW D III

Inventor： HOWALD ARTHUR M ,  KUTHI ANDRAS ,  BAILEY ANDREW D III

IPC: G06F19/00 ,  H01J7/24 ,  H01J37/32 ,  H03H7/40

CPC classification number: H01J37/32082 ,  H01J37/32183 ,  H01J37/3299 ,  H03H7/40 ,  H05H1/46

Abstract: Methods for improving the stability of RF power delivery to a plasma load are disclosed (806). The method includes adding an RF impedance resistor and or a RF power attenuator at one of specific locations in the RF power system to lower the impedance derivatives while keeping the impedance marching circuit in tune with the RF transmission line impedance (804).

Abstract translation: 公开了用于提高RF功率输送到等离子体负载的稳定性的方法（806）。 该方法包括在RF功率系统的特定位置之一处添加RF阻抗电阻器和RF功率衰减器，以降低阻抗导数，同时保持阻抗行进电路与RF传输线路阻抗匹配（804）。