SUBSTRAT À COUCHE FONCTIONNELLE COMPRENANT UN COMPOSÉ SOUFRÉ
    1.
    发明申请
    SUBSTRAT À COUCHE FONCTIONNELLE COMPRENANT UN COMPOSÉ SOUFRÉ 审中-公开
    具有包含硫化合物的功能层的基板

    公开(公告)号:WO2013075879A1

    公开(公告)日:2013-05-30

    申请号:PCT/EP2012/069927

    申请日:2012-10-09

    IPC分类号: H01L51/00 H01L51/52

    摘要: L'invention concerne un substrat (1) comprenant un support (10), ledit support (10) comprenant sur au moins une de ses faces principales, une couche fonctionnelle (11) conférant des propriétés basses émissives, antisolaires ou de conduction électrique caractérisé en ce que ladite couche fonctionnelle (11) comporte à son extrême surface opposée au support (10) au moins un composé soufré, en particulier sous la forme de sulfate, de sulfonate et/ou de thiosulfate.

    摘要翻译: 本发明涉及一种包括介质(10)的基底(1),所述介质(10)在其至少一个主表面上包括具有低E或非极性或导电性的功能层(11) 其特征在于,所述功能层(11)在与介质(10)相对的极端表面上包含至少一种硫化合物,特别是硫酸盐,磺酸盐和/或硫代硫酸盐。

    SPUTTERING TARGET USED FOR PRODUCTION OF REFLECTIVE MASK BLANK FOR EUV LITHOGRAPHY
    2.
    发明申请
    SPUTTERING TARGET USED FOR PRODUCTION OF REFLECTIVE MASK BLANK FOR EUV LITHOGRAPHY 审中-公开
    用于生产反射掩膜的溅射目标用于EUV光刻

    公开(公告)号:WO2008050644A1

    公开(公告)日:2008-05-02

    申请号:PCT/JP2007/070218

    申请日:2007-10-10

    IPC分类号: G03F1/14 C23C14/00

    摘要: To provide a sputtering target to be used for production of an EUV mask blank, capable of preventing particles by film peeling even when formation of a reflective multilayer film as a reflective layer and a Ru layer as a protective layer is carried out at a production level using actual machines for a large number of cycles. A sputtering target for forming a ruthenium (Ru) layer in a reflective layer for reflecting EUV light on a substrate, which contains Ru and at least one element selected from the group consisting of boron (B) and zirconium (Zr) in a total content of B and Zr of from 5 at% to 50 at%.

    摘要翻译: 为了提供用于生产EUV掩模坯料的溅射靶,即使在形成作为反射层的反射性多层膜和作为保护层的Ru层作为保护层的情况下也能够防止膜剥离的粒子, 使用实际的机器进行大量的循环。 一种用于在反射层中形成钌(Ru)层的溅射靶,其用于在基底上反射EUV光,其含有Ru和选自硼(B)和锆(Zr)中的至少一种元素,总含量 的B和Zr为5原子%至50原子%。

    QUARTZ GLASS SUBSTRATE AND PROCESS FOR ITS PRODUCTION
    3.
    发明申请
    QUARTZ GLASS SUBSTRATE AND PROCESS FOR ITS PRODUCTION 审中-公开
    QUARTZ玻璃基板及其生产工艺

    公开(公告)号:WO2008029571A1

    公开(公告)日:2008-03-13

    申请号:PCT/JP2007/065109

    申请日:2007-07-26

    IPC分类号: C03B19/14 C03C3/06

    摘要: For a substrate having fine convexoconcave patterns on its surface, the dimensions of the convexoconcave patterns in a vertical direction of a quartz glass substrate are controlled to be uniform with extreme accuracy and over the entire substrate surface. The quartz glass substrate is made to have a fictive temperature distribution of at most 4O°C and a halogen concentration of less than 400 ppm, or a fictive temperature distribution of at most 4O°C, a halogen concentration of at least 400ppm and a halogen concentration distribution of at most 400ppm and the etching rate of the surface of the quartz glass substrate is made uniform, whereby the dimensions of the convexoconcave patterns in a vertical direction of the quartz glass substrate are controlled to be uniform with good accuracy and over the entire substrate surface.

    摘要翻译: 对于在其表面上具有细凹凸图案的基板,石英玻璃基板的垂直方向上的凸凹图案的尺寸被控制为具有极高的精度和整个基板表面的均匀。 使石英玻璃基板具有至多40℃的虚拟温度分布和小于400ppm的卤素浓度或至多40℃的假想温度分布,至少400ppm的卤素浓度和卤素 浓度分布至多为400ppm,并且石英玻璃基板的表面的蚀刻速率均匀,从而将石英玻璃基板的垂直方向的凸凹图案的尺寸控制为均匀,精度高,整个 基材表面。

    PHOTOMASK, PHOTOMASK MANUFACTURING METHOD, AND PHOTOMASK PROCESSING DEVICE
    5.
    发明申请
    PHOTOMASK, PHOTOMASK MANUFACTURING METHOD, AND PHOTOMASK PROCESSING DEVICE 审中-公开
    照相机,照相机制造方法和光电处理装置

    公开(公告)号:WO2007032504A1

    公开(公告)日:2007-03-22

    申请号:PCT/JP2006/318440

    申请日:2006-09-11

    IPC分类号: G03F1/14 G03F7/20

    摘要: A photomask is manufactured by a method including providing a substrate having a surface on which a predetermined pattern is to be formed, positioning the substrate in an exposure tool so as to obtain an amount of deformation of the surface due to an external force imposed on the substrate, calculating a target profile of the surface, based on the amount of deformation and a target flatness of the surface, and processing the surface of the substrate so as to make the surface substantially flat when the substrate is positioned in the exposure tool.

    摘要翻译: 通过包括提供具有要在其上形成预定图案的表面的基板的方法制造光掩模,将基板定位在曝光工具中,以便获得由于施加在其上的外力而导致的表面的变形量 基板,基于所述表面的变形量和目标平面度来计算所述表面的目标轮廓,以及当所述基板位于所述曝光工具中时,对所述基板的表面进行处理,以使所述表面基本上平坦。

    TRANSLUSCENT CONDUCTIVE SUBSTRATE FOR ORGANIC LIGHT EMITTING DEVICES
    7.
    发明申请
    TRANSLUSCENT CONDUCTIVE SUBSTRATE FOR ORGANIC LIGHT EMITTING DEVICES 审中-公开
    用于有机发光装置的透明导电基板

    公开(公告)号:WO2012007575A1

    公开(公告)日:2012-01-19

    申请号:PCT/EP2011/062132

    申请日:2011-07-15

    IPC分类号: H01L51/52

    摘要: A translucent conductive substrate (1) for Organic Light Emitting Device comprising, a transparent support (10), a scattering layer (11) formed over the transparent support (10) and comprising a glass which contains a base material (110) having a first refractive index for at least one wavelength of light to be transmitted and a plurality of scattering materials (111) dispersed in the base material (110) and having a second refractive index different from that of the base material and a transparent electrode (12) formed over the scattering layer (11), said electrode (12) comprising at least one metal conduction layer (122) and at least one coating ( 120) having properties for improving the light transmission through said electrode, said coating (120) comprises at least one layer for improving light transmission (1201) and is located between the metal conduction layer (122) and the scattering layer (11), on which said electrode (12) is deposited.

    摘要翻译: 一种用于有机发光器件的半透明导电衬底(1),包括透明支撑体(10),形成在所述透明支撑体(10)上方的散射层(11),并且包括玻璃,所述玻璃包含具有第一 用于待透射的光的至少一个波长的折射率和分散在基材(110)中并且具有与基底材料不同的第二折射率的多个散射材料(111)和形成的透明电极(12) 在所述散射层(11)上方,所述电极(12)包括至少一个金属导电层(122)和至少一个具有改善通过所述电极的光透射性能的涂层(120),所述涂层(120)至少包括 一层用于改善光透射(1201)并位于金属传导层(122)和散射层(11)之间,其上沉积有所述电极(12)。

    REFLECTIVE MASK BLANK FOR EUV LITHOGRAPHY
    9.
    发明申请
    REFLECTIVE MASK BLANK FOR EUV LITHOGRAPHY 审中-公开
    反射掩蔽空白用于EUV LITHOGRAPHY

    公开(公告)号:WO2007123263A1

    公开(公告)日:2007-11-01

    申请号:PCT/JP2007/059002

    申请日:2007-04-19

    IPC分类号: G03F1/00

    摘要: To provide a reflective mask blank for EUV lithography having an absorber layer, which presents a low reflectance to a light in the wavelength ranges of EUV light and pattern inspection light, and which is easily controlled to have desired film composition and film thickness. A reflective mask blank for EUV lithography, comprising a substrate, and a reflective layer for reflecting EUV light and an absorber layer for absorbing EUV light formed in this order on the substrate, wherein the absorber layer contains tantalum (Ta), boron (B), silicon (Si) and nitrogen (N), and in the absorber layer, the B content is at least 1 at% and less than 5 at%, the Si content is from 1 to 25 at%, and the compositional ratio of Ta to N (Ta:N) is from 8:1 to 1:1.

    摘要翻译: 为了提供具有吸收层的EUV光刻用的反射掩模板,其对EUV光和图案检查光的波长范围内的光呈现低反射率,并且易于控制以具有所需的膜组成和膜厚度。 一种用于EUV光刻的反射掩模板,包括基板和用于反射EUV光的反射层和用于吸收在基板上依次形成的EUV光的吸收层,其中吸收层包含钽(Ta),硼(B) ,硅(Si)和氮(N),并且在吸收层中,B含量为至少1原子%且小于5原子%,Si含量为1至25原子%,Ta的组成比 至N(Ta:N)为8:1至1:1。