摘要:
L'invention concerne un substrat (1) comprenant un support (10), ledit support (10) comprenant sur au moins une de ses faces principales, une couche fonctionnelle (11) conférant des propriétés basses émissives, antisolaires ou de conduction électrique caractérisé en ce que ladite couche fonctionnelle (11) comporte à son extrême surface opposée au support (10) au moins un composé soufré, en particulier sous la forme de sulfate, de sulfonate et/ou de thiosulfate.
摘要:
To provide a sputtering target to be used for production of an EUV mask blank, capable of preventing particles by film peeling even when formation of a reflective multilayer film as a reflective layer and a Ru layer as a protective layer is carried out at a production level using actual machines for a large number of cycles. A sputtering target for forming a ruthenium (Ru) layer in a reflective layer for reflecting EUV light on a substrate, which contains Ru and at least one element selected from the group consisting of boron (B) and zirconium (Zr) in a total content of B and Zr of from 5 at% to 50 at%.
摘要:
For a substrate having fine convexoconcave patterns on its surface, the dimensions of the convexoconcave patterns in a vertical direction of a quartz glass substrate are controlled to be uniform with extreme accuracy and over the entire substrate surface. The quartz glass substrate is made to have a fictive temperature distribution of at most 4O°C and a halogen concentration of less than 400 ppm, or a fictive temperature distribution of at most 4O°C, a halogen concentration of at least 400ppm and a halogen concentration distribution of at most 400ppm and the etching rate of the surface of the quartz glass substrate is made uniform, whereby the dimensions of the convexoconcave patterns in a vertical direction of the quartz glass substrate are controlled to be uniform with good accuracy and over the entire substrate surface.
摘要:
A method for depositing, on a substrate, a reflective multilayer film of a reflective mask blank for EUV lithography by sputtering, comprises: depositing a reflective multilayer film in such a state that a substrate has been deformed so as to be subjected to a stress, which is directed to the opposite direction to a stress applied to the substrate by deposition of the reflective multilayer film; and returning the substrate to the shape before deformation, after deposition of the reflective multilayer film.
摘要:
A photomask is manufactured by a method including providing a substrate having a surface on which a predetermined pattern is to be formed, positioning the substrate in an exposure tool so as to obtain an amount of deformation of the surface due to an external force imposed on the substrate, calculating a target profile of the surface, based on the amount of deformation and a target flatness of the surface, and processing the surface of the substrate so as to make the surface substantially flat when the substrate is positioned in the exposure tool.
摘要:
An electrode-attached translucent substrate includes a translucent glass substrate including a base glass material and scattering bodies dispersed in the base glass material; a covering layer including a first layer made of a material selected from a group of a metal nitride, a metal oxide and a metal nitride-oxide directly formed on the translucent glass substrate; and a translucent electrode formed on the covering layer.
摘要:
A translucent conductive substrate (1) for Organic Light Emitting Device comprising, a transparent support (10), a scattering layer (11) formed over the transparent support (10) and comprising a glass which contains a base material (110) having a first refractive index for at least one wavelength of light to be transmitted and a plurality of scattering materials (111) dispersed in the base material (110) and having a second refractive index different from that of the base material and a transparent electrode (12) formed over the scattering layer (11), said electrode (12) comprising at least one metal conduction layer (122) and at least one coating ( 120) having properties for improving the light transmission through said electrode, said coating (120) comprises at least one layer for improving light transmission (1201) and is located between the metal conduction layer (122) and the scattering layer (11), on which said electrode (12) is deposited.
摘要:
The present invention relates to a substrate for EUV lithography optical member, comprising a silica glass containing TiO 2 , in which the substrate has two opposite surfaces, and the substrate has temperatures at which a coefficient of linear thermal expansion (CTE) is 0 ppb/°C (Cross-Over Temperature: COT), and in which the two opposite surfaces have difference in the COTs of 5°C or more.
摘要:
To provide a reflective mask blank for EUV lithography having an absorber layer, which presents a low reflectance to a light in the wavelength ranges of EUV light and pattern inspection light, and which is easily controlled to have desired film composition and film thickness. A reflective mask blank for EUV lithography, comprising a substrate, and a reflective layer for reflecting EUV light and an absorber layer for absorbing EUV light formed in this order on the substrate, wherein the absorber layer contains tantalum (Ta), boron (B), silicon (Si) and nitrogen (N), and in the absorber layer, the B content is at least 1 at% and less than 5 at%, the Si content is from 1 to 25 at%, and the compositional ratio of Ta to N (Ta:N) is from 8:1 to 1:1.
摘要:
It is to provide a silica glass containing TiO 2 , having a wide temperature range where wherein the coefficient of thermal expansion becomes is substantially zero. A silica glass containing TiO 2 , which has a TiO 2 concentration of from 3 to 10 mass%, a OH group concentration of at most 600 mass ppm and a Ti 3+ concentration of at most 70 mass ppm, characterized by having a fictive temperature of at most 1,200°C, a coefficient of thermal expansion from 0 to 100°C of 0±150 ppb/°C , and an internal transmittance T 400-700 per 1 mm thickness in a wavelength range of from 400 to 700 nm of at least 80%. A process for producing a silica glass containing TiO 2 , which comprises porous glass body formation step, F-doping step, oxygen treatment step, densification step and vitrification step.