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    NANO-ENABLED MEMORY DEVICES AND ANISOTROPIC CHARGE CARRYING ARRAYS
    3.
    发明申请
    NANO-ENABLED MEMORY DEVICES AND ANISOTROPIC CHARGE CARRYING ARRAYS 审中-公开
    纳米启发的存储器件和执行阵列的各向异性电荷

    公开(公告)号：WO2005089165A2

    公开(公告)日：2005-09-29

    申请号：PCT/US2005007709

    申请日：2005-03-09

    Applicant: NANOSYS INC ,  DUAN XIANGFENG ,  CHOW CALVIN Y H ,  HEALD DAVID L ,  NIU CHUNMING ,  PARCE J WALLACE ,  STUMBO DAVID P

    Inventor： DUAN XIANGFENG ,  CHOW CALVIN Y H ,  HEALD DAVID L ,  NIU CHUNMING ,  PARCE J WALLACE ,  STUMBO DAVID P

    IPC: H01L21/28 ,  H01L29/423 ,  H01L29/788

    CPC classification number: H01L21/28273 ,  B82Y10/00 ,  G03G5/00 ,  G03G5/02 ,  G03G5/04 ,  G03G5/043 ,  G03G5/08 ,  G03G5/082 ,  G03G5/08214 ,  G11C11/56 ,  G11C13/02 ,  G11C13/025 ,  G11C2213/17 ,  G11C2213/18 ,  G11C2216/08 ,  H01L29/42332 ,  H01L29/7881 ,  H01L29/7887 ,  Y10S977/774 ,  Y10S977/785 ,  Y10S977/936

    Abstract: Methods and apparatuses for nanoenabled memory devices and anisotropic charge carrying arrays are described. In an aspect, a memory device includes a substrate, a source region of the substrate, and a drain region of the substrate. A population of nanoelements is deposited on the substrate above a channel region, the population of nanolements in one embodiment including metal quantum dots. A tunnel dielectric layer is formed on the substrate overlying the channel region, and a metal migration barrier layer is deposited over the dielectric layer. A gate contact is formed over the thin film of nanoelements. The nanoelements allow for reduced lateral charge transfer. The memory device may be a single or multistate memory device. In a multistate memory device which comprises one or more quantum dots or molecules having a plurality of discrete energy levels, a method is disclosed for charging and/or discharging the device which comprises filling each of the plurality of discrete energy levels of each dot or molecule with one or more electrons, and subsequently removing individual electrons at a time from each discrete energy level of the one or more dots or molecules.

    Abstract translation: 描述了用于纳米存储器件和各向异性带电载体阵列的方法和装置。 在一方面，存储器件包括衬底，衬底的源极区域和衬底的漏极区域。 纳米元素的群体沉积在通道区域上方的衬底上，在一个实施方案中纳米元素包括金属量子点。 隧道介电层形成在覆盖沟道区的衬底上，金属迁移势垒层沉积在电介质层上。 在纳米元件的薄膜上形成栅极接触。 纳米元件允许减少横向电荷转移。 存储器件可以是单个或多个存储器件。 在包括具有多个离散能级的一个或多个量子点或分子的多状态存储器件中，公开了用于对该器件进行充电和/或放电的方法，该方法包括填充每个点或分子的多个离散能级中的每一个 与一个或多个电子，并随后从一个或多个点或分子的每个离散能级一次去除单个电子。

    VARIABLE CONTROL OF ELECTROOSMOTIC AND/OR ELECTROPHORETIC FORCES WITHIN A FLUID-CONTAINING STRUCTURE VIA ELECTRICAL FORCES
    8.
    发明申请
    VARIABLE CONTROL OF ELECTROOSMOTIC AND/OR ELECTROPHORETIC FORCES WITHIN A FLUID-CONTAINING STRUCTURE VIA ELECTRICAL FORCES 审中-公开
    通过电力在含流体结构中的电动和/或电动力的可变控制

    公开(公告)号：WO1998000707A1

    公开(公告)日：1998-01-08

    申请号：PCT/US1997012930

    申请日：1997-07-03

    Applicant: CALIPER TECHNOLOGIES CORPORATION ,  CHOW, Calvin, Y., H. ,  PARCE, J., Wallace

    Inventor： CALIPER TECHNOLOGIES CORPORATION

    IPC: G01N27/26

    CPC classification number: G01N27/44791 ,  G01N27/44713 ,  G01N27/44752 ,  G01N27/44773 ,  Y10S366/02 ,  Y10T29/49002

    Abstract: In a microfluidic system (partially shown by element 178 in the figure and elements thereupon) using electrokinetic forces, the present invention uses electrical current or electrical parameters, other than voltage, to control the movement of fluids through the channels of the system. Time-multiplexed power supplies (200 and 202) also provide further control over fluid movement by varying the voltage on an electrode connected to a fluid reservoir of the microfluidic system, by varying the duty cycle during which the voltage is applied to the electrode, or by a combination of both. A time-multiplexed power supply can also be connected to more than one electrode for a saving in cost.

    Abstract translation: 在使用电动力的微流体系统（图中由元件178部分地示出）上，本发明使用电压以外的电流或电气参数来控制流体通过系统的通道的运动。 时间复用电源（200和202）还通过改变连接到微流体系统的流体存储器的电极上的电压来改变对电极施加电压的占空比，来进一步控制流体运动，或者 通过两者的结合。 时间复用电源也可以连接到多个电极以节省成本。

    NANO-ENABLED MEMORY DEVICES AND ANISOTROPIC CHARGE CARRYING ARRAYS
    9.
    发明申请
    NANO-ENABLED MEMORY DEVICES AND ANISOTROPIC CHARGE CARRYING ARRAYS 审中-公开

    公开(公告)号：WO2005089165A3

    公开(公告)日：2005-09-29

    申请号：PCT/US2005/007709

    申请日：2005-03-09

    Applicant: NANOSYS, INC. ,  DUAN, Xiangfeng ,  CHOW, Calvin, Y., H. ,  HEALD, David, L. ,  NIU, Chunming ,  PARCE, J., Wallace ,  STUMBO, David, P.

    Inventor： DUAN, Xiangfeng ,  CHOW, Calvin, Y., H. ,  HEALD, David, L. ,  NIU, Chunming ,  PARCE, J., Wallace ,  STUMBO, David, P.

    IPC: H01L29/06

    Abstract: Methods and apparatuses for nanoenabled memory devices and anisotropic charge carrying arrays are described. In an aspect, a memory device includes a substrate, a source region of the substrate, and a drain region of the substrate. A population of nanoelements is deposited on the substrate above a channel region, the population of nanolements in one embodiment including metal quantum dots. A tunnel dielectric layer is formed on the substrate overlying the channel region, and a metal migration barrier layer is deposited over the dielectric layer. A gate contact is formed over the thin film of nanoelements. The nanoelements allow for reduced lateral charge transfer. The memory device may be a single or multistate memory device. In a multistate memory device which comprises one or more quantum dots or molecules having a plurality of discrete energy levels, a method is disclosed for charging and/or discharging the device which comprises filling each of the plurality of discrete energy levels of each dot or molecule with one or more electrons, and subsequently removing individual electrons at a time from each discrete energy level of the one or more dots or molecules.

    METHODS, DEVICES AND SYSTEMS FOR CHARACTERIZING PROTEINS
    10.
    发明申请
    METHODS, DEVICES AND SYSTEMS FOR CHARACTERIZING PROTEINS 审中-公开
    用于表征蛋白质的方法，装置和系统

    公开(公告)号：WO0046594A9

    公开(公告)日：2001-11-15

    申请号：PCT/US0002680

    申请日：2000-02-02

    Applicant: CALIPER TECHN CORP ,  DUBROW ROBERT S ,  BLOXSOM CHRISTOPHER ,  CHOW CALVIN Y H ,  PARCE JOHN WALLACE

    Inventor： DUBROW ROBERT S ,  BLOXSOM CHRISTOPHER ,  CHOW CALVIN Y H ,  PARCE JOHN WALLACE

    IPC: G01N27/447 ,  G01N37/00 ,  G01N27/26

    CPC classification number: G01N27/44747 ,  G01N27/44791

    Abstract: A method of characterizing a polypeptide, comprising providing a first capillary channel (104) having a separation buffer disposed within, wherein the separation buffer comprises a non-crosslinked polymer solution, a buffering agent, a detergent, and a lipophilic dye. The separation buffer is provided such that, at the time of detection, the detergent concentration in the buffer is not above the critical micelle concentration. The polypeptide is introduced into one end of the capillary channel. An electric field is applied across the polymer solution at different rates. The polypeptide is then detected as it passes a point (176) along the length of the capillary channel.

    Abstract translation: 一种表征多肽的方法，包括提供其中设置有分离缓冲液的第一毛细通道（104），其中所述分离缓冲液包含非交联聚合物溶液，缓冲剂，洗涤剂和亲脂性染料。 提供分离缓冲液，使得在检测时，缓冲液中的洗涤剂浓度不高于临界胶束浓度。 将多肽引入毛细管通道的一端。 以不同的速率在整个聚合物溶液上施加电场。 然后当毛细通道沿着毛细通道的长度通过点（176）时，检测多肽。

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