METHODS FOR DEPOSITING A SILICON LAYER ON A LASER SCRIBED TCO LAYER SUITABLE FOR USE IN SOLAR CELL APPLICATIONS
    4.
    发明申请
    METHODS FOR DEPOSITING A SILICON LAYER ON A LASER SCRIBED TCO LAYER SUITABLE FOR USE IN SOLAR CELL APPLICATIONS 审中-公开
    用于在太阳能电池应用中使用的激光可控TCO层上沉积硅层的方法

    公开(公告)号:WO2008147696A1

    公开(公告)日:2008-12-04

    申请号:PCT/US2008/063613

    申请日:2008-05-14

    CPC classification number: H01L21/68735

    Abstract: Methods and apparatus for reducing defects on transmitting conducting oxide (TCO) layer are provided. The method includes a method of laser scribing a TCO layer for solar cell applications. In one embodiment, a method for depositing a silicon layer on a transmitting conducting oxide (TCO) layer may include laser scribing a cell-integrated region of a TCO layer disposed on a substrate for solar applications, the TCO layer having a laser scribing free periphery region outward of the cell-integrated region, the periphery region having a width between about 10 mm and about 30 mm measured from an edge of the substrate, transferring the scribed substrate into a deposition chamber, and depositing a silicon containing layer on the TCO layer in the deposition chamber.

    Abstract translation: 提供了减少传导导电氧化物(TCO)层缺陷的方法和装置。 该方法包括激光划片用于太阳能电池应用的TCO层的方法。 在一个实施例中,用于在透射导电氧化物(TCO)层上沉积硅层的方法可以包括激光刻划设置在用于太阳能应用的衬底上的TCO层的电池集成区域,TCO层具有激光划线自由周边 所述外围区域具有从所述基板的边缘测量的约10mm至约30mm之间的宽度,将所述划线基板转印到沉积室中,并且在所述TCO层上沉积含硅层 在沉积室中。

    CLEAN RATE IMPROVEMENT BY PRESSURE CONTROLLED REMOTE PLASMA SOURCE
    6.
    发明申请
    CLEAN RATE IMPROVEMENT BY PRESSURE CONTROLLED REMOTE PLASMA SOURCE 审中-公开
    压力控制远程等离子体源的清洁率改进

    公开(公告)号:WO2009012159A1

    公开(公告)日:2009-01-22

    申请号:PCT/US2008/069812

    申请日:2008-07-11

    CPC classification number: B08B7/0035 C23C16/24 C23C16/4405

    Abstract: The present invention generally comprises a method for cleaning a large area substrate processing chamber. As chamber volume increases, it has surprisingly been found that simply scaling up the cleaning conditions may not effectively clean silicon from the exposed chamber surfaces. Undesired silicon deposits on exposed chamber surfaces may lead to contamination in solar panel formation. Increasing the pressure of the chamber to about 10 Torr or greater while maintaining the chamber at a temperature between about 150 degrees Celsius and 250 degrees Celsius increases plasma cleaning effectiveness such that silicon deposits are removed from the chamber. The combination of high pressure and low temperature may reduce substrate contamination without sacrificing substrate throughput in solar panel fabrication.

    Abstract translation: 本发明通常包括清洗大面积基板处理室的方法。 随着室体积的增加,令人惊讶地发现,简单地放大清洁条件可能不能有效地从暴露的室表面清洁硅。 暴露的室表面上的不期望的硅沉积物可能导致太阳能电池板形成中的污染。 将室的压力提高到约10托或更高,同时将室保持在约150摄氏度和250摄氏度之间的温度,增加等离子体清洁效果,使得硅沉积物从室中移除。 高压和低温的组合可以减少基板污染,而不会牺牲太阳能电池板制造中的基板产量。

    SOLAR CELLS AND METHODS AND APPARATUSES FOR FORMING THE SAME
    9.
    发明申请
    SOLAR CELLS AND METHODS AND APPARATUSES FOR FORMING THE SAME 审中-公开
    太阳能电池及其形成方法及装置

    公开(公告)号:WO2010005439A1

    公开(公告)日:2010-01-14

    申请号:PCT/US2008/069685

    申请日:2008-07-10

    Abstract: Embodiments of the present invention generally provide an apparatus and method for forming an improved thin film single or multi-junction solar cell in a substrate processing device. One embodiment provides a system that contains at least one processing chamber that is adapted to deposit one or more layers that form a portion of a solar cell device. In one embodiment, a method is employed to reduce the contamination of a substrate processed in the processing chamber by performing a cleaning process on the inner surfaces of the processing chamber prior to depositing the one or more layers on a substrate. The cleaning process may include depositing a layer, such as a seasoning layer or passivation layer, that tends to trap contaminants found in the processing chamber. Other embodiments of the invention may provide scheduling and/or positioning the cleaning processing steps at desirable times within a substrate processing sequence.

    Abstract translation: 本发明的实施例通常提供一种用于在衬底处理装置中形成改进的薄膜单结或多结太阳能电池的装置和方法。 一个实施例提供一种系统,其包含适于沉积形成太阳能电池器件的一部分的一个或多个层的至少一个处理室。 在一个实施例中,采用一种方法来在将一个或多个层沉积在衬底上之前通过在处理室的内表面上进行清洁处理来减少在处理室中处理的衬底的污染。 清洁过程可以包括沉积倾向于捕获在处理室中发现的污染物的层,例如调味层或钝化层。 本发明的其他实施例可以提供在衬底处理序列内的期望时间调度和/或定位清洁处理步骤。

Patent Agency Ranking