APPARATUS AND METHOD OF WAFER BONDING USING COMPATIBLE ALLOY
    4.
    发明申请
    APPARATUS AND METHOD OF WAFER BONDING USING COMPATIBLE ALLOY 审中-公开
    使用兼容合金的晶片粘合装置和方法

    公开(公告)号:WO2010030460A2

    公开(公告)日:2010-03-18

    申请号:PCT/US2009/053360

    申请日:2009-08-11

    Abstract: A method of forming an inertial sensor provides 1) a device wafer with a two-dimensional array of inertial sensors and 2) a second wafer, and deposits an alloy of aluminum/ germanium onto one or both of the wafers. The alloy is deposited and patterned to form a plurality of closed loops. The method then aligns the device wafer and the second wafer, and then positions the alloy between the wafers. Next, the method melts the alloy, and then solidifies the alloy to form a plurality of conductive hermetic seal rings about the plurality of the inertial sensors. The seal rings bond the device wafer to the second wafer. Finally, the method dices the wafers to form a plurality of individual, hermetically sealed inertial sensors.

    Abstract translation: 一种形成惯性传感器的方法提供1)具有惯性传感器的二维阵列的器件晶片和2)第二晶片,并且将铝/锗的合金沉积到一个或两个 晶圆。 该合金被沉积并被图案化以形成多个闭环。 然后该方法对齐器件晶片和第二晶片,然后将合金放置在晶片之间。 接下来,该方法熔化合金,然后固化合金以围绕多个惯性传感器形成多个导电气密密封环。 密封环将器件晶片结合到第二晶片。 最后,该方法将晶圆切成多个单独的密封惯性传感器。

    MICROMACHINED MICROPHONE AND MULTISENSOR AND METHOD FOR PRODUCING SAME
    8.
    发明申请
    MICROMACHINED MICROPHONE AND MULTISENSOR AND METHOD FOR PRODUCING SAME 审中-公开
    MICROMACHINED MICROPHONE AND MULTISENSOR AND METHOD FOR PRODUCENTS SAME

    公开(公告)号:WO2006116017A2

    公开(公告)日:2006-11-02

    申请号:PCT/US2006014982

    申请日:2006-04-21

    Abstract: A micromachined microphone is formed from a silicon or silicon-on- insulator (SOI) wafer. A fixed sensing electrode for the microphone is formed from a top silicon layer of the wafer. Various polysilicon microphone structures are formed above a front side of the top silicon layer by depositing at least one oxide layer, forming the structures, and then removing a portion of the oxide underlying the structures from a back side of the top silicon layer through trenches formed through the top silicon layer. The trenches allow sound waves to reach the diaphragm from the back side of the top silicon layer. In an SOI wafer, a cavity is formed through a bottom silicon layer and an intermediate oxide layer to expose the trenches for both removing the oxide and allowing the sound waves to reach the diaphragm. An inertial sensor may be formed on the same wafer, with various inertial sensor structures formed at substantially the same time and using substantially the same processes as corresponding microphone structures.

    Abstract translation: 微机械麦克风由硅或绝缘硅绝缘体(SOI)晶片形成。 用于麦克风的固定感测电极由晶片的顶部硅层形成。 通过沉积形成结构的至少一个氧化物层,然后通过形成的沟槽从顶部硅层的背面去除结构物下面的氧化物的一部分,形成在顶部硅层前侧上的各种多晶硅麦克风结构 通过顶层硅层。 沟槽允许声波从顶部硅层的背面到达隔膜。 在SOI晶片中,通过底部硅层和中间氧化物层形成空腔,以露出沟槽,以去除氧化物并允许声波到达隔膜。 惯性传感器可以形成在相同的晶片上,其中各种惯性传感器结构基本上在同一时间形成并且使用与对应的麦克风结构基本上相同的过程。

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