Abstract:
A pressure sensor device with a MEMS piezoresistive pressure sensing element attached to an in-circuit ceramic board comprises a monolithic ceramic circuit board formed by firing multiple layers of ceramic together. The bottom side of the circuit board has a cavity, which extends through layers of material from the ceramic circuit board is formed. A ceramic diaphragm, which is one of the layers, has a peripheral edge. The diaphragm's thickness enables the diaphragm bounded by the edge to deflect responsive to applied pressure. A MEMS piezoresistive pressure sensing element attached to the top side of the ceramic circuit board generates an output signal responsive to deflection of the ceramic diaphragm. A conduit carrying a pressurized fluid can be attached directly to the ceramic circuit board using a seal on the bottom of the ceramic circuit board, which surrounds the opening of the cavity through the bottom.
Abstract:
본 발명은 압력 검출시 공동 이외의 영역에서 잡음으로 작용하는 기생 정전용량을 최소화하여 미소 센서를 구현할 수 있는 정전용량형 압력센서 및 그의 제조방법을 제공하는데 그 목적이 있다. 이를 위해, 본 발명은 하부전극으로 기능하는 기판과, 상기 기판 상에 형성된 제1 절연막과, 상기 제1 절연막 상에 형성된 공동과, 상기 공동과 연통하는 개구부를 가지며, 상기 공동을 덮도록 상기 제1 절연막 상에 형성된 제2 절연막과, 상기 개구부를 매개로 상기 개구부와 상기 공동의 일부가 매립되도록 전도성 재질로 형성된 밀봉막과, 상기 공동과 중첩되도록 상기 제2 절연막 상에 형성된 상부전극을 포함하는 정전용량형 압력센서를 제공한다. 따라서, 본 발명에 의하면, 공동을 형성한 후 상기 공동의 양측부에 전도성 재질로 밀봉막을 앵커(anchor) 형상으로 형성하고, 상기 밀봉막과 전기적으로 분리되어 상기 공동과 중첩되는 상부전극을 형성하여 압력 검출시 실질적으로 영향을 미치는 공동 영역을 상기 밀봉막을 통해 특정 영역으로 제한함으로써 압력 검출시 공동 이외의 영역에서 잡음으로 작용하는 기생 정전용량을 최소화하여 미소 센서를 구현할 수 있다.
Abstract:
L'invention concerne un procédé de fabrication d'un capteur de pression comprenant les étapes suivantes : - assemblage d'un substrat support avec une membrane déformable sur laquelle des jauges de contraintes ont été déposées, la membrane déformable comprenant une zone amincie en son centre, le substrat support étant disposé au-dessus de la membrane déformable, le substrat support comprenant une surface supérieure, une surface inférieure en contact avec la membrane déformable, le substrat support comprenant en outre des évidements latéraux disposés au-dessus des jauges de contraintes et un évidement central disposé au-dessus la zone amincie de la membrane, ceci pour obtenir une structure micromécanique; et une fois l'assemblage effectué, le procédé comprenant l'étape suivante : - dépôt en une unique étape d'au moins un matériau conducteur sur la surface supérieure du support et dans les évidements latéraux du support, le matériau conducteur s'étendant dans les évidements pour être en contact avec les jauges de contraintes afin de former des contacts électriques en liaison avec les jauges de contraintes.
Abstract:
Es wird ein Verfahren zur Herstellung eines Halbleiterbauelements (166) vorgeschlagen. Das Verfahren umfasst die folgenden Schritte: a) ein Halbleiterchip (110) wird auf einem Ausgangssubstrat (112) erzeugt, wobei der Halbleiterchip (110) in mindestens einer Stützstelle (116) mit dem Ausgangssubstrat (112) verbunden ist, wobei der Halbleiterchip (110) eine dem Ausgangssubstrat (112) abgewandte Vorderseite (130) und eine dem Ausgangssubstrat (112) zuweisende Rückseite (132) aufweist, b) in mindestens einem Durchkontaktierungsschritt wird mindestens ein Durchkontakt-Füllmaterial (142) auf den Halbleiterchip (110) aufgebracht, wobei zumindest ein Teilbereich (140) der Rückseite (132) mit dem Durchkontakt- Füllmaterial (142) beschichtet wird, c) der Halbleiterchip (110) wird von dem Ausgangssubstrat (1 12) getrennt, und d) der Halbleiterchip (110) wird auf mindestens ein Trägersubstrat (150) aufgebracht, wobei der mit dem Durchkontakt-Füllmaterial (142) beschichtete Teilbereich (140) der Rückseite (132) des Halbleiterchips (110) mit mindestens einem Bondpad (152) auf dem Trägersubstrat (150) verbunden wird.
Abstract:
An electronic apparatus is provided that has a core, an electronic circuit in the core and a lid. An ESD protection device is in the lid. The ESD protection device is coupled to the electronic circuit.
Abstract:
A capacitive sensor including a housing having a hermetically sealed cavity, a plate in the cavity, a diaphragm forming a part of the cavity and spaced from the plate, a conductive layer on the first diaphragm, and a second conductive layer on the plate, the first and second conductive layers being the electrodes of a capacitor whose capacitance varies with the position of the diaphragm relative to the plate.
Abstract:
A sensor has a sensor body (2) with a first face (2b) and a second face (2a) opposite to one another, and a circuit arrangement (5) supported by the sensor body (2) that includes: - a first electrical circuit pattern (6) on the first face (2b); - a second electrical circuit pattern (7) on the second face (2a); - connection means (14-14a, 15-15a), which electrically connect the first circuit pattern (6) to the second circuit pattern (7) and comprise at least one through hole (14-14a, 15-15a) that extends axially between the two faces (2a, 2b) of the sensor body (2), where extending over an inner surface of the at least one through hole (14-14a, 15-15a) is a layer of electrically conductive material (14a, 15a); - a plurality of terminals (10), for connection of the circuit arrangement (5) to an external system, the terminals (10) being electrically connected to at least one of the first circuit pattern (6) and the second circuit pattern (7). The at least one through hole (14-14a, 15-15a) is preferably closed at the second face (2a) of the sensor body (2) via a closing member (30) having a body (30a) that is at least in part pre-formed. The pre-formed body (30a) of the closing member (30) has a closing portion (31) having a perimetral or cross-sectional dimension, in particular a diameter, greater than a perimetral or cross-sectional 20 dimension, in particular a diameter, of the opening of the through hole (14-14a, 15-15a) at the second face (2a) of the sensor body (2). At least one portion (31, 32) of the pre-formed body (30a) of the closing member (30) is fixed in position in a fluid-tight way with respect to the corresponding hole (14-14a, 15-15a).
Abstract:
Semiconductor sensor chips are provided. In some embodiments, a semiconductor sensor chip can include at least one wire bond pad on one side thereof, at least one bond pad on another, opposite side thereof, and at least one through-silicon via (TSV) extending therebetween and electrically connected to the bond pads on opposite sides of the chip. Each of the bond pads can have a wire attached thereto. In some embodiments, a semiconductor sensor chip can include a pressure sensor, a substrate, and a resistor in a well that provides p-n junction isolation from a body of the substrate. In some embodiments, a semiconductor sensor chip can include a plurality of wire bonds pads with a wire soldered to each of the bond pads. Each of the wires can be soldered with a longitudinal length thereof soldered to its associated bond pad.
Abstract:
Provided is a capacitive pressure sensor which minimizes parasitic capacitance acting as noise in a non-hollow area during pressure detection so as to realize a micro-machined sensor, and a method for manufacturing same. The capacitive pressure sensor of the present invention includes a substrate functioning as a lower electrode, a first insulating film disposed on the substrate, a hollow disposed in the first insulating film, an opening communicating with the hollow, a second insulating film disposed on the first insulating film to cover the hollow, a sealing film formed of a conductive material so that the hollow and the opening are partially buried through the opening, and an upper electrode disposed on the second insulating film to be superimposed with the hollow. According to the present invention, after the hollow is formed, the conductive sealing film is formed in the shape of an anchor at both sides of the hollow, and the upper electrode electrically separated from the sealing film and superimposed with the hollow is formed so that a hollow area which substantially affects the pressure detection process is limited to a certain area by the sealing film, and the parasitic capacitance acting as the noise in the non-hollow area during the pressure detection process is minimized so as to realize the micro-machined sensor.
Abstract:
A pressure sensor (1 ) has a sensor body (2, 20) at least partly formed with an electrically insulating material, particularly a ceramic material, defining a cavity (3) facing on which is a diaphragm (20) provided with an electric detector element, configured for detecting a bending of the diaphragm (20). The sensor body (2, 20) supports a circuit arrangement (6), comprising a plurality of circuit components (7, 15), among which an integrated circuit (15), for treating a signal generated by the detection element. The circuit arrangement (6) includes tracks made of electrically conductive material directly deposited on a surface of the sensor body (2, 20) made of electrically insulating material, the integrated circuit is made up of a die made of semiconductor material (15) directly bonded onto the surface of the sensor body and the die (15) is connected to respective tracks (9) by means of wire bonding, i.e. by means of thin connecting wires (16) made of electrically conductive material.