公开(公告)号：WO2010112265A1

公开(公告)日：2010-10-07

申请号：PCT/EP2010/052093

申请日：2010-02-19

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION ,  IBM UNITED KINGDOM LIMITED ,  MCDEVITT, Thomas, Leddy ,  SHAH, Eva ,  TIERSCH, Matthew, Thomas ,  BATES, Graham, Matthew ,  WHITE, Eric, Jeffrey

Inventor： MCDEVITT, Thomas, Leddy ,  SHAH, Eva ,  TIERSCH, Matthew, Thomas ,  BATES, Graham, Matthew ,  WHITE, Eric, Jeffrey

IPC: H01L21/321 ,  C09G1/02

CPC classification number: H01L21/3212 ,  C09G1/02

Abstract: The instant invention is a method of polishing a substrate including contacting a substrate having at least one metal layer including copper with a chemical-mechanical polishing composition. The CMP composition includes an abrasive, a surfactant, an oxidizer, an organic acid including polyacrylic acid or polymethacrylic acid, a corrosion inhibitor, and a liquid carrier. A portion of the copper in the metal layer is abraded to polish the substrate. A second CMP composition contacts the abraded substrate, the second acrylate free composition including an abrasive, a surfactant, an oxidizer, and a corrosion inhibitor, and a liquid carrier. Any dendrites that may have formed on the substrate are removed through abrasion.

Abstract translation: 本发明是抛光衬底的方法，包括使具有至少一个包含铜的金属层的衬底与化学机械抛光组合物接触。 CMP组合物包括研磨剂，表面活性剂，氧化剂，包括聚丙烯酸或聚甲基丙烯酸的有机酸，缓蚀剂和液体载体。 金属层中的铜的一部分被磨损以抛光基底。 第二CMP组合物接触研磨的基材，第二无丙烯酸酯组合物包含研磨剂，表面活性剂，氧化剂和腐蚀抑制剂以及液体载体。 可能通过磨损去除可能在基底上形成的任何枝晶。

公开(公告)号：WO2010015678A3

公开(公告)日：2010-10-28

申请号：PCT/EP2009060213

申请日：2009-08-06

Applicant: IBM ,  IBM UK ,  STAMPER ANTHONY ,  ANDERSON FELIX PATRICK ,  MCDEVITT THOMAS LEDDY ,  EDELSTEIN DANIEL ,  COTE WILLIAM

Inventor： STAMPER ANTHONY ,  ANDERSON FELIX PATRICK ,  MCDEVITT THOMAS LEDDY ,  EDELSTEIN DANIEL ,  COTE WILLIAM

IPC: H01L23/532 ,  H01L21/3105 ,  H01L21/60 ,  H01L21/768 ,  H01L23/485

CPC classification number: H01L24/13 ,  H01L21/3105 ,  H01L21/76807 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76831 ,  H01L23/53238 ,  H01L23/53295 ,  H01L24/11 ,  H01L24/45 ,  H01L24/48 ,  H01L24/85 ,  H01L2221/1036 ,  H01L2224/0401 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05647 ,  H01L2224/05666 ,  H01L2224/13022 ,  H01L2224/13027 ,  H01L2224/13099 ,  H01L2224/13111 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/45147 ,  H01L2224/48847 ,  H01L2924/00011 ,  H01L2924/01005 ,  H01L2924/01014 ,  H01L2924/01018 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01044 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04953 ,  H01L2924/14 ,  H01L2924/19042 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/01006

Abstract: Structures with improved solder bump connections and methods of fabricating such structures are provided herein. The structure includes a trench formed in a dielectric layer which has at least a portion (12) thereof devoid of a fluorine boundary layer. The structure further includes a copper wire (20) in the trench having at least a bottom portion thereof in contact with the non- fluoride boundary layer (12) of the trench. A lead free solder bump (34) is in electrical contact with the copper wire (20).

Abstract translation: 具有改善的焊料凸点连接的结构和制造这种结构的方法在本文中提供。 该结构包括形成在电介质层中的沟槽，该沟槽至少具有一部分（12）缺少氟边界层。 该结构还包括在沟槽中的铜线（20），其至少其底部与沟槽的非氟化物边界层（12）接触。 无铅焊料凸块（34）与铜线（20）电接触。

公开(公告)号：WO2010015678A2

公开(公告)日：2010-02-11

申请号：PCT/EP2009/060213

申请日：2009-08-06

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION ,  IBM UNITED KINGDOM LIMITED ,  STAMPER, Anthony ,  ANDERSON, Felix, Patrick ,  MCDEVITT, Thomas, Leddy ,  EDELSTEIN, Daniel ,  COTE, William

Inventor： STAMPER, Anthony ,  ANDERSON, Felix, Patrick ,  MCDEVITT, Thomas, Leddy ,  EDELSTEIN, Daniel ,  COTE, William

IPC: H01L23/532 ,  H01L23/485 ,  H01L21/3105 ,  H01L21/768 ,  H01L21/60

CPC classification number: H01L24/13 ,  H01L21/3105 ,  H01L21/76807 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76831 ,  H01L23/53238 ,  H01L23/53295 ,  H01L24/11 ,  H01L24/45 ,  H01L24/48 ,  H01L24/85 ,  H01L2221/1036 ,  H01L2224/0401 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05647 ,  H01L2224/05666 ,  H01L2224/13022 ,  H01L2224/13027 ,  H01L2224/13099 ,  H01L2224/13111 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/45147 ,  H01L2224/48847 ,  H01L2924/00011 ,  H01L2924/01005 ,  H01L2924/01014 ,  H01L2924/01018 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01044 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04953 ,  H01L2924/14 ,  H01L2924/19042 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/01006

Abstract: Structures with improved solder bump connections and methods of fabricating such structures are provided herein. The structure includes a trench formed in a dielectric layer which has at least a portion thereof devoid of a fluorine boundary layer. The structure further includes a copper wire in the trench having at least a bottom portion thereof in contact with the non- fluoride boundary layer of the trench. A lead free solder bump is in electrical contact with the copper wire.

Abstract translation: 具有改善的焊料凸点连接的结构和制造这种结构的方法在本文中提供。 该结构包括在至少一部分没有氟边界层的电介质层中形成的沟槽。 该结构还包括在沟槽中的铜线，其至少其底部与沟槽的非氟化物边界层接触。 无铅焊料凸块与铜线电接触。

公开(公告)号：WO2008055887A1

公开(公告)日：2008-05-15

申请号：PCT/EP2007/061904

申请日：2007-11-06

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION ,  IBM UNITED KINGDOM LIMITED ,  LUCE, Stephen, Ellinwood ,  MCDEVITT, Thomas, Leddy ,  STAMPER, Anthony

Inventor： LUCE, Stephen, Ellinwood ,  MCDEVITT, Thomas, Leddy ,  STAMPER, Anthony

IPC: H01L23/532 ,  H01L23/522

CPC classification number: H01L23/53238 ,  H01L21/76801 ,  H01L23/5226 ,  H01L23/53223 ,  H01L23/53228 ,  H01L23/53252 ,  H01L23/53266 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A structure and a method for forming the same. The structure includes (a) an interlevel dielectric (ILD) layer; (b) a first electrically conductive line and a second electrically conductive line both residing in the ILD layer; (c) a diffusion barrier region residing in the ILD layer. The diffusion barrier region (i) physically isolates, (ii) electrically couples together, and (iii) are in direct physical contact with the first and second electrically conductive lines. The first and second electrically conductive lines each comprises a first electrically conductive material. The diffusion barrier region comprises a second electrically conductive material different fro m the first electrically conduct ive material. The diffusion barrier region is adapted to prevent a diffusion of the first electrically conductive material through the diffusion barrier region.

Abstract translation: 一种结构及其形成方法。 该结构包括（a）层间电介质层（ILD）层; （b）位于ILD层中的第一导电线和第二导电线; （c）位于ILD层中的扩散阻挡区域。 扩散阻挡区（i）物理隔离，（ii）电耦合在一起，和（iii）与第一和第二导电线直接物理接触。 第一和第二导电线各自包括第一导电材料。 扩散阻挡区域包括与第一导电材料不同的第二导电材料。 扩散阻挡区域适于防止第一导电材料通过扩散阻挡区域的扩散。