Abstract:
A semiconductor, room-temperature, electrically excited, two-photon device with thick optically active layer is provided. The intrinsic AIGaAs active layer is sandwiched between two intrinsic graded waveguide layers having increased aluminum concentration at increased distance from the active layer. The waveguide structure is sandwiched between two cladding layers of high aluminum concentration, n and p doped respectively. The structure is epitaxially grown on a substrate and further comprises other layers such as buffer, graded layers and contact layers. An etched ridge provides lateral confinement for light. The device provides two-photons gain and may be used in light sources, optical amplifiers, pulse compressors and lasers.
Abstract:
A wavelength selective filter device is presented suitable for use as a part of a laser cavity for processing light output of a gain section of the laser cavity. The filter structure comprises a resonator structure including at least one closed-loop resonator; and defines an optical coupler structure for coupling light from an input/output of the gain section to propagate through said resonator structure, and a light reflector structure for reflecting light filtered by said resonator structure to propagate through said resonator structure to said input/output of the gain section. The filter structure is configured so as to define two optical paths of substantially the same lengths for light propagation in the resonator structure from and to the coupler structure.
Abstract:
An integrated optical device is presented. The device comprises at least one structure formed by three linear waveguides arranged in a spaced-apart parallel relationship, and two ring-like waveguides. One ring-like waveguide is located between the first and second linear waveguides being optically coupled to said first and second linear waveguides, and the other ring-like waveguide is located between the second and third linear waveguides being optically coupled to said second and first linear waveguides. This structure being is thereby operable as a single separation filter, when the first linear waveguide is connected to an input channel, and the third linear waveguide is connected to an output channel. By combining similar structures of the same configuration, a multiple-channel interleave filter can be obtained.
Abstract:
A method of fabricating an integrated optical device and such a device, comprising a structure including at least one waveguiding element are presented. A basic structure is formed containing a substrate material carrying a buffer material layer coated with a core material layer of a higher refraction index as compared to that of the buffer layer. The at least one waveguiding element is defined in a guiding layer on top of the basic structure. The guiding layer is made of a material with a refractive index higher than the refractive index of the buffer layer and the core layer, and is chosen so as to minimize a height of the at least one waveguiding element and to provide effective guiding of light in the core layer. A cladding layer is formed on top of the so-obtained structure, wherein a height difference between the cladding layer region above the waveguiding element and the cladding layer region outside the waveguiding element is substantially small resulting in a desired flatness of the top cladding layer to allow direct formation of a further waveguide structure thereon and prevent significant perturbations in light propagation within the further waveguide structure.
Abstract:
The present invention introduces a new technique allowing the fabrication of high-aspect ratio nanoscale semiconductor structures and local device modifications using FIB technology. The unwanted semiconductor sputtering in the beam tail region prevented by a thin slow-sputter-rate layer which responds much slower and mostly to the high-intensity ion beam center, thus acting as a saturated absorber funnel-like mask for the semiconductor. The protective layer can be deposited locally using FIB, thus enabling this technique for local device modifications, which is impossible using existing technology. Furthermore, such protective layers allow much higher resolution and nanoscale milling can be achieved with very high aspect ratios, e.g. Ti layer results in aspect ratio higher than 10 versus bare semiconductor milling ratio of about 3.
Abstract:
A device (10) for manipulating an object present in a fluid by electrokinetics is disclosed. The device comprises a substrate (12) forming a flow chamber (14). The device further comprises a plurality of electrically biasable electrode structures (16) and at least one electrically floating electrode structure (18).
Abstract:
A wavelength selective filter device is presented suitable for use as a part of a laser cavity for processing light output of a gain section of the laser cavity. The filter structure comprises a resonator structure including at least one closed-loop resonator; and defines an optical coupler structure for coupling light from an input/output of the gain section to propagate through said resonator structure, and a light reflector structure for reflecting light filtered by said resonator structure to propagate through said resonator structure to said input/output of the gain section. The filter structure is configured so as to define two optical paths of substantially the same lengths for light propagation in the resonator structure from and to the coupler structure.
Abstract:
The invention is a waveguide structure (10) that includes two waveguides (90, 94) flanking a coupling region (92) whose effective refractive index is less than those of the waveguides. Outboard of the waveguides are bounding regions (88, 96) whose effective refractive indices decrease inwards adiabatically at the proximal and distal ends of the bounding regions. The waveguides are coupled optically by periodic perturbations of the waveguide geometry, or by reversible uniform or periodic perturbations of the effective refractive indices. In an optical switch matrix based on the waveguide structure, all the waveguides are straight and parallel. A second aspect of the invention is a directional coupler comprising mechanisms for reversibly and quasiperiodically perturbing the effective refractive indices of the waveguides. The respective envelope functions vary monotonically in opposite senses. Light propagating in one waveguide, in the direction in which that waveguide's envelope function increases, is coupled into the other waveguide.
Abstract:
The invention is a waveguide structure (10) that includes two waveguides (90, 94) flanking a coupling region (92) whose effective refractive index is less than those of the waveguides. Outboard of the waveguides are bounding regions (88, 96) whose effective refractive indices decrease inwards adiabatically at the proximal and distal ends of the bounding regions. The waveguides are coupled optically by periodic perturbations of the waveguide geometry, or by reversible uniform or periodic perturbations of the effective refractive indices. In an optical switch matrix based on the waveguide structure, all the waveguides are straight and parallel. A second aspect of the invention is a directional coupler comprising mechanisms for reversibly and quasiperiodically perturbing the effective refractive indices of the waveguides. The respective envelope functions vary monotonically in opposite senses. Light propagating in one waveguide, in the direction in which that waveguide's envelope function increases, is coupled into the other waveguide.
Abstract:
A multisegment laser diode structure is presented in the form of two spaced-apart linear waveguide segments and two spaced-apart ring-like waveguide segments, arranged such that each of the ring-like segments is optically coupled to each of the linear waveguide segments. At least one of the waveguide segments includes an active lasing material. The waveguide segments are thus arranged such that four separate electrical contacts can be provided to four waveguide segments, respectively, thereby enabling separate driving of each of the waveguide segments.