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    PROCESS AND DEVICE FOR THE WAVE OR VAPOUR-PHASE SOLDERING OF ELECTRONIC UNITS
    7.
    发明申请
    PROCESS AND DEVICE FOR THE WAVE OR VAPOUR-PHASE SOLDERING OF ELECTRONIC UNITS 审中-公开
    METHOD AND APPARATUS FOR波和/或电子部件汽相焊接

    公开(公告)号：WO1996037330A1

    公开(公告)日：1996-11-28

    申请号：PCT/DE1996000968

    申请日：1996-05-24

    Applicant: FRAUNHOFER-GESELLSCHAFT ZUR FÖRDERUNG DER ANGEWANDTEN FORSCHUNG E.V. ,  SCHEEL, Wolfgang ,  RING, Karl ,  HAFNER, Willi ,  LEICHT, Helmut

    Inventor： FRAUNHOFER-GESELLSCHAFT ZUR FÖRDERUNG DER ANGEWANDTEN FORSCHUNG E.V.

    IPC: B23K01/015

    CPC classification number: B23K1/015 ,  B23K2101/40 ,  H05K3/3415 ,  H05K3/3468 ,  H05K3/3494 ,  H05K2203/088

    Abstract: The invention describes a process and a device for wave and/or reflow soldering in the form of vapour-phase soldering for electronic units. In prior art processes and devices, either wave soldering or vapour-phase soldering alone can be performed in a single chamber. For electronic units which contain both components which are to be wave soldered and those to be reflow soldered, at least two soldering devices and two process steps are necessary. There is the further drawback that temperature-sensitive components impose either a limitation on the soldering temperature and hence the solders which can be used or laborious post-fitting. The invention performs wave soldering and vapour-phase soldering as a form of reflow soldering in a single chamber, in which an electronic unit can be placed and/or the portion of the volume of the chamber filled with the saturated vapour of a primary fluid can be controlled in such a way that, at the worst, temperature-sensitive components of the unit lie only partly in the saturated vapour and the connections of the electronic components of the unit are in the saturated vapour during soldering. The invention permits the soldering of surface-fitted, penetrating and temperature-sensitive components, e.g. large electrolytic capacitors, in a single chamber and in a single process stage and is therefore eminently suitable for economical mass production with high soldering quality.

    Abstract translation: 本发明描述的方法和在用于电子组件汽相焊接的形式波和/或回流焊接的装置。 在在一个单一的室中仅波峰焊或仅气相焊接已知方法和装置或者是可行的。 对于包含于波峰焊和回流焊接两个部件的电子组件，从而至少两个焊接设备，因此需要两个工艺步骤。 还存在温度敏感设备或者需要在钎焊温度的限制，因此为所述可选择的焊接材料，或进行复杂的改造必要的缺点。 本发明实现了波峰焊和汽相焊接作为在单一腔室回流焊接的形式中，电子组件可被放置成和/或填充有所述室的主液体体积分数的饱和蒸汽被如此调节使得组件中的温度敏感元件至多部分地 位于饱和蒸汽，并且该连接被焊接模块的电子部件的软钎焊过程中位于饱和蒸汽。 本发明允许安装面的焊接，通过配合和温度敏感的组分，例如 大电解电容器，在一个单一的腔室，并在单一的工艺步骤，并且因此非常适合于廉价的大量生产具有非常好的焊接质量。

    SOLUTION AND METHOD FOR CURRENTLESS DEPOSITION OF GOLD COATING
    9.
    发明申请
    SOLUTION AND METHOD FOR CURRENTLESS DEPOSITION OF GOLD COATING 审中-公开
    解决方案和方法的金层分离CURRENT地段

    公开(公告)号：WO9918254A3

    公开(公告)日：1999-08-26

    申请号：PCT/DE9803013

    申请日：1998-10-06

    Applicant: FRAUNHOFER GES FORSCHUNG ,  SCHEEL WOLFGANG ,  HANNEMANN MONIKA ,  SCHMIDT RALF ,  MUELLER JUTTA ,  MEYER HEINRICH ,  REHAK WOLFGANG

    Inventor： SCHEEL WOLFGANG ,  HANNEMANN MONIKA ,  SCHMIDT RALF ,  MUELLER JUTTA ,  MEYER HEINRICH ,  REHAK WOLFGANG

    IPC: C23C18/44 ,  H05K3/24

    CPC classification number: C23C18/44 ,  H05K3/244

    Abstract: Various methods exist for currentless deposition of gold coating on metal surfaces. In one method, the coating can be deposited on a base metal by means of cementing charge exchange. In other methods, the depositing solutions can additionally contain a reducing agent such that a gold coating can also be deposited on a precious metal e.g. gold. Known solutions, however, have a disadvantage in that the depositing rate is very slow when the pH value of the solution is between 6 and 7 and when the temperature is adjusted below 50 DEG C. However, such coating conditions are not suitable for processing, for example, alkali-soluble resistant conducting plates. To this end, a depositing bath is provided. According to the invention, said bath contains: a) at least one gold (I) compound, b) at least one reducing agent for the gold (I) compounds, and c) at least one solvent. d1) The gold (I) compound contains a complexity of gold (I) ions with a compound comprised of the amino acids group and the salts thereof, said compound having a formation constant of at least 10 for the complexation of gold (I) ions. d2) The solution additionally contains at least one compound comprised of the amino acids group or the salts thereof, said compound having a formation constant of at least 10 for the complexation of gold (I) ions.

    Abstract translation: 在金属表面上的金膜的无电沉积，各种方法是已知的。 首先，层可以通过在基体金属胶结电荷交换进行沉积。 其次，电镀液可另外包含还原剂，以便它可以在贵金属如金，金层来形成。 已知的解决方案，然而，具有非常低的沉积速率的缺点在于，当该溶液至低于6至7的值和温度的pH低于50℃调节至 然而，用于处理这样的涂层的条件下，例如，设置有碱可溶性抗蚀剂的印刷电路板是不适合的。 为了解决这个问题，一个沉积浴是合适的）至少包含a）至少一个金（I）化合物，b）至少一种还原剂为金（I）的化合物和溶剂C，其特征在于，D1），为金（I） 化合物，金（I）中的至少一种配合物与选自具有金（I）的络合配位恒定的氨基酸的至少10 <10>离子和这些酸的盐的化合物的离子包括，或其中D2 ）另外至少一种选自下组的氨基酸（具有络合常数化合物用于含有金溶液I）的至少10 <10>离子或氨基酸的盐的络合。

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