摘要:
The present invention relates to a method for manufacturing a structure, including the steps of forming a recessed section in a first surface of a substrate (1); filling the recessed section with metal (3) to form a metal structure; exposing the metal structure from the substrate; and applying resin (20) onto the exposed metal structure and solidifying the resin to form a resin layer.
摘要:
An electrostatic charged particle beam lens includes an electrode including a flat plate having a first surface having a normal line extending in a direction of an optical axis and a second surface opposite to the first surface, the electrode having a through-hole extending from the first surface to the second surface. When an opening cross section is defined as a cross section of the through-hole taken along a plane perpendicular to the normal line and a representative diameter is defined as a diameter of a circle obtained by performing regression analysis of the opening cross section, a representative diameter of the opening cross section in a first region that is on the first surface side and a representative diameter of the opening cross section in a second region that is on the second surface side are each larger than a representative diameter of the opening cross section in a third region that is a region in the electrode disposed between the first surface and the second surface.
摘要:
A method for manufacturing a structure by using a silicon mold, in which disturbances in arrangement due to charges are reduced, can be provided. The method for manufacturing a structure includes the steps of forming a recessed portion in a silicon substrate, cleaning, drying, or conveying the silicon substrate while charges of a plurality of portions sandwiched between the recessed portion are removed, and filling a metal into the recessed portion of the silicon substrate subjected to the cleaning, drying, or conveying.
摘要:
An electrostatic charged particle beam lens includes an electrode including a flat plate having a first surface having a normal line extending in a direction of an optical axis and a second surface opposite to the first surface, the electrode having a through-hole extending from the first surface to the second surface. When an opening cross section is defined as a cross section of the through-hole taken along a plane perpendicular to the normal line and a representative diameter is defined as a diameter of a circle obtained by performing regression analysis of the opening cross section, a representative diameter of the opening cross section in a first region that is on the first surface side and a representative diameter of the opening cross section in a second region that is on the second surface side are smaller than a representative diameter of the opening cross section in a third region that is a region in the electrode disposed between the first surface and the second surface.
摘要:
The present invention relates to a method for filling a through hole (5) of a substrate (2) with a metal. The method includes a step of preparing a bonded substrate including a first substrate (1) having conductivity in at least a surface thereof and a second substrate (2) having a through hole (5), both substrates being bonded to each other through a nonionic surfactant (4); a step of exposing, in the bonded surface of the bonded substrate, the conductive surface of the first substrate, which is positioned at the bottom of the through hole, by removing the nonionic surfactant positioned at the bottom of the through hole of the second substrate; and a step of filling the through hole with a metal by applying an electric field to the conductive surface of the first substrate.
摘要:
A method for manufacturing a structure by using a silicon mold, in which disturbances in arrangement due to charges are reduced, can be provided. The method for manufacturing a structure includes the steps of forming a recessed portion in a silicon substrate, cleaning, drying, or conveying the silicon substrate while charges of a plurality of portions sandwiched between the recessed portion are removed, and filling a metal into the recessed portion of the silicon substrate subjected to the cleaning, drying, or conveying.
摘要:
An electrostatic charged particle beam lens includes an electrode including a flat plate having a first surface having a normal line extending in a direction of an optical axis and a second surface opposite to the first surface, the electrode having a through-hole extending from the first surface to the second surface. A circularity in a first region that is on the first surface side and a circularity in a second region that is on the second surface side are each better than a circularity in a third region that is a region in the electrode disposed between the first surface and the second surface.
摘要:
In a charged particle beam lens according to the present invention, the orientations of through-holes formed in electrodes and precision of forming the through-holes are determined in accordance with the degree of influences of the surfaces of the electrodes on the aberration of the lens.
摘要:
There is provided a method for manufacturing a charged particle beam lens having a bonded electrode obtained by bonding at least a first conductive substrate having a first through-hole and a second conductive substrate having a second through-hole. The above method includes: forming the first through-hole in the first conductive substrate; forming the second through-hole in the second conductive substrate; and bonding the first conductive substrate and the second conductive substrate so that the first through-hole and the second through-hole communicate with each other.
摘要:
A microstructure manufacturing method includes forming a first insulating film on an Si substrate, exposing an Si surface by removing a part of the first insulating film, forming a recessed portion by etching the Si substrate from the exposed Si surface, forming a second insulating film on a sidewall and a bottom of the recessed portion, forming an Si exposed surface by removing at least a part of the second insulating film formed on the bottom of the recessed portion, and filling the recessed portion with a metal from the Si exposed surface by electrolytic plating.