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    SUBSTRATE HEATING METHOD AND APPARATUS
    7.
    发明申请
    SUBSTRATE HEATING METHOD AND APPARATUS 审中-公开
    基板加热方法和设备

    公开(公告)号：WO2008100718A2

    公开(公告)日：2008-08-21

    申请号：PCT/US2008/052711

    申请日：2008-01-31

    Applicant: APPLIED MATERIALS, INC. ,  CUI, Anqing ,  SEUTTER, Sean, M. ,  SMITH, Jacob, W. ,  IYER, R., Suryanarayanan

    Inventor： CUI, Anqing ,  SEUTTER, Sean, M. ,  SMITH, Jacob, W. ,  IYER, R., Suryanarayanan

    IPC: G06F19/00 ,  H05B3/10

    CPC classification number: H01L21/67103 ,  H01L21/67109 ,  H01L21/6875

    Abstract: Embodiments of substrate heating methods and apparatus are provided herein. In one embodiment, a substrate heater is provided including a heater plate having a top surface and an opposing bottom surface, a recess formed in the top surface, the recess having a feature having an upper surface for supporting a substrate, wherein the depth from a bottom surface of the recess to the upper surface of the feature is at least 5 mils. One or more pads may be disposed in the recess for supporting a substrate. The heater plate may have a thickness of about 19 mm. One or more indentations may be formed in the bottom surface of the recess for altering the rate of heat transfer to a portion of a substrate disposed above the indentation during processing. The heater plate may be utilized in a process chamber for performing heat-assisted processes.

    Abstract translation: 本文提供了衬底加热方法和设备的实施例。 在一个实施例中，提供了一种衬底加热器，其包括具有顶表面和相对底表面的加热器板，形成在顶表面中的凹部，该凹部具有用于支撑衬底的具有上表面的特征，其中， 凹部的底面到特征的上表面的距离至少为5密耳。 一个或多个衬垫可以设置在凹槽中以支撑衬底。 加热器板可以具有大约19mm的厚度。 可以在凹槽的底表面中形成一个或多个凹槽，用于改变在处理期间传递到设置在凹槽上方的衬底的一部分的热传递速率。 加热板可以用于处理室中以执行热辅助处理。

    METHOD FOR FORMING SILICON-CONTAINING MATERIALS DURING A PHOTOEXCITATION DEPOSITION PROCESS
    9.
    发明申请
    METHOD FOR FORMING SILICON-CONTAINING MATERIALS DURING A PHOTOEXCITATION DEPOSITION PROCESS 审中-公开
    曝光沉积过程中形成含硅材料的方法

    公开(公告)号：WO2007002040A3

    公开(公告)日：2009-03-19

    申请号：PCT/US2006023915

    申请日：2006-06-20

    Applicant: APPLIED MATERIALS INC ,  SINGH KAUSHAL K ,  RANISH JOSEPH M ,  SEUTTER SEAN M

    Inventor： SINGH KAUSHAL K ,  RANISH JOSEPH M ,  SEUTTER SEAN M

    IPC: H01L21/318 ,  H01L21/469

    CPC classification number: H01L21/3185 ,  C23C16/0227 ,  C23C16/345 ,  C23C16/45519 ,  C23C16/45591 ,  C23C16/482 ,  C23C16/488 ,  C23C16/52

    Abstract: Embodiments of the invention generally provide a method for depositing films using a UV source during a photoexcitation process. The films are deposited on a substrate and contain a material, such as silicon (e.g., epitaxy, crystalline, microcrystalline, polysilicon, or amorphous), silicon oxide, silicon nitride, silicon oxynitride, or other silicon-containing materials. The photoexcitation process may expose the substrate and/or gases to an energy beam or flux prior to, during, or subsequent the deposition process. Therefore, the photoexcitation process may be used to pre-treat or post-treat the substrate or material, to deposit the silicon-containing material, and to enhance chamber cleaning processes. Attributes of the method that are enhanced by the UV photoexcitation process include removing native oxides prior to deposition, removing volatiles from deposited films, increasing surface energy of the deposited films, increasing the excitation energy of precursors, reducing deposition time, and reducing deposition temperature.

    Abstract translation: 本发明的实施方案通常提供一种在光激发过程中使用UV源沉积膜的方法。 膜沉积在衬底上并且包含诸如硅（例如外延，晶体，微晶，多晶硅或非晶），氧化硅，氮化硅，氮氧化硅或其它含硅材料的材料。 光致激发过程可以在沉积过程之前，期间或之后使衬底和/或气体暴露于能量束或通量。 因此，光激发过程可以用于预处理或后处理衬底或材料，沉积含硅材料，并且增强室清洁过程。 通过UV光激发过程增强的方法的特征包括在沉积之前去除原生氧化物，从沉积膜去除挥发物，增加沉积膜的表面能，增加前体的激发能，减少沉积时间和降低沉积温度。

    METHOD AND APPARATUS FOR THE LOW TEMPERATURE DEPOSITION OF DOPED SILICON NITRIDE FILMS
    10.
    发明申请
    METHOD AND APPARATUS FOR THE LOW TEMPERATURE DEPOSITION OF DOPED SILICON NITRIDE FILMS 审中-公开
    氮化硅薄膜低温沉积的方法与装置

    公开(公告)号：WO2007044145A2

    公开(公告)日：2007-04-19

    申请号：PCT/US2006033470

    申请日：2006-08-29

    Applicant: APPLIED MATERIALS INC ,  IYER R SURYANARAYANAN ,  SMITH JACOB W ,  SEUTTER SEAN M ,  ZHANG KANGZHAN ,  LAM ANDREW M ,  CUNNINGHAM KEVIN L ,  RAMACHANDRAN PHANI

    Inventor： IYER R SURYANARAYANAN ,  SMITH JACOB W ,  SEUTTER SEAN M ,  ZHANG KANGZHAN ,  LAM ANDREW M ,  CUNNINGHAM KEVIN L ,  RAMACHANDRAN PHANI

    IPC: H01L21/00

    CPC classification number: C23C16/45565 ,  C23C16/345 ,  C23C16/4412 ,  C23C16/4557

    Abstract: A method and apparatus for low temperature deposition of doped silicon nitride films is disclosed. The improvements include a mechanical design for a CVD chamber that provides uniform heat distribution for low temperature processing and uniform distribution of process chemicals, and methods for depositing at least one layer comprising silicon and nitrogen on a substrate by heating a substrate, flowing a silicon containing precursor into a processing chamber having a mixing region defined by an adaptor ring and one or more blocker plates and an exhaust system, heating the adapter ring and a portion of the exhaust system, flowing one or more of a hydrogen, germanium, boron, or carbon containing precursor into the processing chamber, and optionally flowing a nitrogen containing precursor into the processing chamber.

    Abstract translation: 公开了一种用于低温沉积掺杂氮化硅膜的方法和装置。 这些改进包括用于CVD室的机械设计，其提供用于低温处理的均匀热分布和工艺化学品的均匀分布，以及用于通过加热衬底在衬底上沉积至少一层包含硅和氮的方法，使含硅 前体进入处理室，其具有由适配环和一个或多个阻断板和排气系统限定的混合区域，加热适配环和排气系统的一部分，其中一个或多个氢，锗，硼或 含碳前体进入处理室，并任选地将含氮前体流入处理室。

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