Abstract:
Various exemplary embodiments of the invention provide an extended depth of field. One embodiment provides an image restoration procedure, comprising determining sample point pixels from a pixel array based upon a distance of an object being imaged to the pixel array, and reading intensities of the sample point pixels into a memory. Another embodiment provides an image capture procedure comprising capturing light rays on a pixel array of an imaging sensor, wherein specific sampling point pixels are selected to be evaluated based on spread of an image spot across a based on spread of an image spot across the plurality of pixels of the pixel array plurality of pixels of the pixel array.
Abstract:
A high resolution spectral measurement device. A preferred embodiment presents an extremely narrow slit function in the ultraviolet range and is very useful for measuring bandwidth of narrow-band excimer lasers used for integrated circuit lithography. Light from the laser is focused into a diffuser and the diffused light exiting the diffuser illuminates an etalon. A portion of its light exiting the etalon is collected and directed into a slit positioned at a fringe pattern of the etalon. Light passing through the slit is collimated and the collimated light illuminates a grating positioned in an approximately Littrow configuration which disburses the light according to wavelength. A portion of the dispursed light representing the wavelength corresponding to the selected etalon fringe is passed through a second slit and monitored by a light detector. When the etalon and the grating are tuned to the same precise wavelength a slit function is defined which is extremely narrow such as about 0.034pm (FWHM) and about 0.091pm (95 percent integral). The bandwidth of a laser beam can be measured very accurately by a directing portion of the laser beam into the insulator and scanning the laser wavelength over a range which includes the monochromator slit wavelength. In a second embodiment the second slit and the light detector is replaced by a photodiode array and the bandwidth of a laser beam is determined by analyzing a set of scan data from the photodiode array. Alternately, the laser wavelength can be fixed near the middle of the spectrum range of the grating spectrometer, and the etalon can be scanned.
Abstract:
The present invention provides a modular high repetition rate ultraviolet gas discharge laser (4) light source for a production line machine. The system includes an enclosed and purged beam path for delivery the laser beam to a desired location such as the entrance port of the production line machine. In preferred embodiments, the production line machine is a lithography machine (2) and two separate discharge chambers are provided, one of which is a part of a master oscillator producing a very narrow band send beam which is amplified in the second discharge chamber. The MOPA system is capable of output pulse energies approximately double the comparable single chamber laser system with greatly improved beam quality. A pulse stretcher more than doubles the output pulse length resulting in a reduction in pulse power (mJ/ns) as compared to prior art laser systems. This preferred embodiment is capable throughout the operating life of the lithography system, despite substantially degradation of optical components.
Abstract:
The present invention provides an excimer laser capable of producing a high quality pulsed laser beam at pulse rates of about 4,000 Hz at pulse energies of about 5mJ or greater. A preferred embodiments is an ArF excimer laser specifically designed as a light source for integrated circuit lithography. An improved wavemeter with special software monitors output beam parameters and controls a very fast PZT driven tuning mirror and the pulse power charging voltage to maintain wavelength and pulse energy within desired limits. In a preferred embodiment two fan motors drive a single tangential fan which provides sufficient gas flow to clear discharge debris from the discharge region during the approximately 0.25 milliseconds between pulses.
Abstract:
The invention, in various exemplary embodiments, incorporates multiple image sensor arrays, with separate respective color filters, on the same imager die. One exemplary embodiment is an image sensor comprising a plurality of arrays of pixel cells at a surface of a substrate, wherein each pixel cell comprises a photo-conversion device. The arrays are configured to commonly capture an image. An image processor circuit is connected to said plurality of arrays and configured to combine the captured images, captured by the plurality of arrays, and output a color image.
Abstract:
A high resolution spectral measurement device. A preferred embodiment presents an extremely narrow slit function in the ultraviolet range and is very useful for measuring bandwidth of narrow-band excimer lasers used for integrated circuit lithography. Light from the laser is focused into a diffuser (D) and the diffused light exiting the diffuser (D) illuminates an etalon (ET). A portion of its light exiting the etalon (ET) is collected and directed into a slit (S1) positioned at a fringe pattern of the etalon (ET). Light passing through the slit (S1) is collimated and the collimated light illuminates a grating (GR1) positioned in an approximately Littrow configuration which disperses the light according to wavelength. A portion of the dispersed light representing the wavelength corresponding to the selected etalon fringe is passed through a second slit and monitored by a light detector. When the etalon (ET) and the grating (GR1) are tuned to the same precise wavelength a slit function is defined which is extremely narrow such as about 0.034pm (FWHM) and about 0.091pm (95 percent integral). The bandwidth of a laser beam can be measured very accurately by a directing portion of the laser beam into the insulator and scanning the laser wavelength over a range which includes the monochromator slit wavelength. In a second embodiment the second slit and the light detector is replaced by a photodiode array (PDA) and the bandwidth of a laser beam is determined by analyzing a set of scan data from the photodiode array (PDA). Alternately, the laser wavelength can be fixed near the middle of the spectrum range of the grating spectrometer (50), and the etalon (ET) can be scanned.
Abstract:
A catadioptric anamorphic beam expanding telescope (2A, 2B) expands a beam in a first axis substantially perpendicular to the beam propagation axis, and deflects it in a plane substantially perpendicular to the first axis. The beam expanding telescope (2A, 2B) can include reflective, refractive, and combined reflective/refractive elements. An embodiment includes an off axis convex spheric reflector (205) and off axis combined reflective/refractive optical element, commonly known as a Mangin mirror (206), incorporating a refractive first surface and a reflective rear surface, which compensate for aberrations introduced by the off axis deflection of the beam. The telescope is particularly useful for deep ultraviolet (DUV) applications at wavelengths shorter than about 250 nm.
Abstract:
Various exemplary embodiments of the invention provide an extended depth of field. One embodiment provides an image restoration procedure, comprising determining sample point pixels from a pixel array based upon a distance of an object being imaged to the pixel array, and reading intensities of the sample point pixels into a memory. Another embodiment provides an image capture procedure comprising capturing light rays on a pixel array of an imaging sensor, wherein specific sampling point pixels are selected to be evaluated based on spread of an image spot across a based on spread of an image spot across the plurality of pixels of the pixel array plurality of pixels of the pixel array.
Abstract:
An injection seeded modular gas discharge laser system capable of producing high quality pulsed laser beams at pulse rates of about 4,000 Hz or greater and at pulse energies of about 5 mJ or greater. Two separate discharge chambers are provided, one of which is a part of a master oscillator producing a very narrow band seed beam which is amplified in the second discharge chamber. The chambers can be controlled separately permitting separate optimization of wavelength parameters in the master oscillator and optimization of pulse energy parameters in the amplifying chamber. A preferred embodiment in an ArF excimer laser system configured as a MOPA and specifically designed for use as a light source for integrated circuit lithography. In the preferred MOPA embodiment, each chamber comprises a single tangential fan providing sufficient gas flow to permit operation at pulse rates of 4000 Hz or greater by clearing debris from the discharge region in less time than the approximately 0.25 milliseconds between pulses. The master oscillator is equipped with a line narrowing package having a very fast tuning mirror capable of controlling centerline wavelength on a pulse-to-pulse basis at repetition rates of 4000 Hz or greater to a precision of less than 0.2 pm.
Abstract:
Methods and apparatus for treating the interior of a blood vessel include a variety of improved catheter designs, methods and apparatus for accessing and occluding a blood vessel.