公开(公告)号：WO2011143062A3

公开(公告)日：2012-05-10

申请号：PCT/US2011035534

申请日：2011-05-06

Applicant: APPLIED MATERIALS INC ,  SANKARAKRISHNAN RAMPRAKASH ,  BALASUBRAMANIAN GANESH ,  ROCHA-ALVAREZ JUAN CARLOS ,  DU BOIS DALE R ,  FODOR MARK A ,  ZHOU JIANHUA ,  BANSAL AMIT ,  AYOUB MOHAMAD ,  SHAIKH SHAHID ,  REILLY PATRICK ,  PADHI DEENESH ,  NOWAK THOMAS

Inventor： SANKARAKRISHNAN RAMPRAKASH ,  BALASUBRAMANIAN GANESH ,  ROCHA-ALVAREZ JUAN CARLOS ,  DU BOIS DALE R ,  FODOR MARK A ,  ZHOU JIANHUA ,  BANSAL AMIT ,  AYOUB MOHAMAD ,  SHAIKH SHAHID ,  REILLY PATRICK ,  PADHI DEENESH ,  NOWAK THOMAS

IPC: H01L21/205

CPC classification number: H01L21/6719 ,  C23C16/46 ,  C23C16/5096 ,  H01J37/32495 ,  H01J37/32568 ,  H01J37/32651 ,  H01J37/32715

Abstract: An apparatus for plasma processing a substrate is provided. The apparatus comprises a processing chamber, a substrate support disposed in the processing chamber, a shield member disposed in the processing chamber below the substrate support, and a lid assembly coupled to the processing chamber. The lid assembly comprises a conductive gas distributor coupled to a power source, and an electrode separated from the conductive gas distributor and the chamber body by electrical insulators. The electrode is also coupled to a source of electric power. The substrate support is formed with a stiffness that permits very little departure from parallelism. The shield member thermally shields a substrate transfer opening in the lower portion of the chamber body. A pumping plenum is located below the substrate support processing position, and is spaced apart therefrom.

Abstract translation: 提供了一种用于等离子体处理衬底的装置。 该设备包括处理室，设置在处理室中的基板支撑件，设置在基板支撑件下方的处理室中的屏蔽构件以及耦合到处理室的盖组件。 盖组件包括耦合到电源的导电气体分配器和通过电绝缘体与导电气体分配器和室主体分离的电极。 电极也耦合到电源。 衬底支撑件形成有允许很少偏离平行度的刚度。 屏蔽构件对室主体的下部的基板传送开口进行热屏蔽。 泵送气室位于基板支撑处理位置下方，并与其间隔开。

公开(公告)号：WO2009009607A1

公开(公告)日：2009-01-15

申请号：PCT/US2008/069547

申请日：2008-07-09

Applicant: APPLIED MATERIALS, INC. ,  SHAH, Ashish ,  BALASUBRAMANIAN, Ganesh ,  DU BOIS, Dale R. ,  FODOR, Mark A. ,  KIM, Eui Kyoon ,  CHAN, Chiu ,  JANAKIRAMAN, Karthik ,  NOWAK, Thomas ,  WERNER, Joseph C. ,  SIVARAMAKRISHNAN, Visweswaren ,  AYOUB, Mohamad ,  AL-BAYATI, Amir ,  ZHOU, Jianhua

Inventor： SHAH, Ashish ,  BALASUBRAMANIAN, Ganesh ,  DU BOIS, Dale R. ,  FODOR, Mark A. ,  KIM, Eui Kyoon ,  CHAN, Chiu ,  JANAKIRAMAN, Karthik ,  NOWAK, Thomas ,  WERNER, Joseph C. ,  SIVARAMAKRISHNAN, Visweswaren ,  AYOUB, Mohamad ,  AL-BAYATI, Amir ,  ZHOU, Jianhua

IPC: H01L21/302

CPC classification number: H01L21/68 ,  Y10S414/136

Abstract: The present invention comprises an apparatus and method for etching at a substrate edge region. In one embodiment, the apparatus comprises a chamber having a process volume, a substrate support arranged inside the process volume and having a substrate support surface, a plasma generator coupled to the chamber and configured to supply an etching agent in a plasma phase to a peripheral region of the substrate support surface, and a gas delivery assembly coupled to a gas source for generating a radial gas flow over the substrate support surface from an approximately central region of the substrate support surface toward the peripheral region of the substrate support surface.

Abstract translation: 本发明包括用于在衬底边缘区域刻蚀的设备和方法。 在一个实施例中，该装置包括具有处理体积的腔室，布置在处理体积内的衬底支撑件并且具有衬底支撑表面，等离子体发生器，耦合到腔室并且被配置为将等离子体相中的蚀刻剂供应到外围 基板支撑表面的区域以及耦合到气体源的气体输送组件，用于从衬底支撑表面的大致中心区域朝向衬底支撑表面的周边区域产生在衬底支撑表面上的径向气流。

公开(公告)号：WO2004108079A3

公开(公告)日：2005-03-24

申请号：PCT/US2004016813

申请日：2004-05-28

Applicant: UNIV MASSACHUSETTS ,  ZHOU JIANHUA ,  ZHONG LING

Inventor： ZHOU JIANHUA ,  ZHONG LING

IPC: A01K67/00 ,  A01K67/027 ,  A01K67/033 ,  A61K20060101 ,  C07H21/02 ,  C07H21/04 ,  C07K14/00 ,  G01N33/00 ,  G01N33/68

CPC classification number: G01N33/6896 ,  G01N2500/00

Abstract: The present invention relates to a novel interaction between FLRF/Nrdp1 and parkin and the implications of this interaction for diagnosis and treatment of Parkinson's Disease. Methods of screening for compounds and tools for use in the diagnosis and treatment of Parkinson's Disease are provided. Compounds and methods for use in the diagnosis and treatment of Parkinson's Disease are also provided.

Abstract translation: 本发明涉及FLRF / Nrdp1和帕金蛋白之间的新型相互作用以及该相互作用对帕金森病诊断和治疗的影响。 提供了筛选用于诊断和治疗帕金森病的化合物和工具的方法。 还提供了用于诊断和治疗帕金森病的化合物和方法。

公开(公告)号：WO2011075437A2

公开(公告)日：2011-06-23

申请号：PCT/US2010/060069

申请日：2010-12-13

Applicant: APPLIED MATERIALS, INC. ,  YAP, Lipyeow ,  NGUYEN, Tuan Anh (Mike) ,  DU BOIS, Dale R. ,  BALUJA, Sanjeev ,  NOWAK, Thomas ,  ROCHA-ALVAREZ, Juan Carlos ,  ZHOU, Jianhua

Inventor： YAP, Lipyeow ,  NGUYEN, Tuan Anh (Mike) ,  DU BOIS, Dale R. ,  BALUJA, Sanjeev ,  NOWAK, Thomas ,  ROCHA-ALVAREZ, Juan Carlos ,  ZHOU, Jianhua

IPC: H01L21/68 ,  H01L21/683 ,  H01L21/205 ,  C23C16/458

CPC classification number: H01L21/67109 ,  H01L21/68792

Abstract: Embodiments of the invention generally relate to a semiconductor processing chamber and, more specifically, a heated support pedestal for a semiconductor processing chamber. In one embodiment, a pedestal for a semiconductor processing chamber is provided. The pedestal comprises a substrate support comprising a conductive material and having a support surface for receiving a substrate, a resistive heater encapsulated within the substrate support, a hollow shaft coupled to the substrate support at a first end and a mating interface at an opposing end, the hollow shaft comprising a shaft body having a hollow core, and a cooling channel assembly encircling the hollow core and disposed within the shaft body for removing heat from the pedestal via an internal cooling path, wherein the substrate support has a heat control gap positioned between the heating element and the ring-shaped cooling channel.

Abstract translation: 本发明的实施例一般涉及半导体处理室，更具体地说，涉及用于半导体处理室的加热的支撑基座。 在一个实施例中，提供了一种用于半导体处理室的基座。 基座包括基板支撑件，该基板支撑件包括导电材料并具有用于接收基板的支撑表面，封装在基板支撑件内的电阻加热器，在第一端处耦合到基板支撑件的中空轴和在相对端处的配合接口， 所述中空轴包括具有中空芯的轴体和围绕所述中空芯的冷却通道组件，所述冷却通道组件设置在所述轴体内，用于经由内部冷却路径从所述基座移除热量，其中所述基板支撑件具有位于 加热元件和环形冷却通道。

公开(公告)号：WO2011017060A2

公开(公告)日：2011-02-10

申请号：PCT/US2010043274

申请日：2010-07-26

Applicant: APPLIED MATERIALS INC ,  DU BOIS DALE R ,  ROCHA-ALVAREZ JUAN CARLOS ,  BALUJA SANJEEV ,  BALASUBRAMANIAN GANESH ,  YAP LIPYEOW ,  ZHOU JIANHUA ,  NOWAK THOMAS

Inventor： DU BOIS DALE R ,  ROCHA-ALVAREZ JUAN CARLOS ,  BALUJA SANJEEV ,  BALASUBRAMANIAN GANESH ,  YAP LIPYEOW ,  ZHOU JIANHUA ,  NOWAK THOMAS

IPC: H01L21/683 ,  H01L21/02 ,  H01L21/205

CPC classification number: H01L21/68 ,  C23C16/4585 ,  H01J37/32091 ,  H01L21/324 ,  H01L21/67103 ,  H01L21/68728 ,  H01L21/6875

Abstract: A method and apparatus for heating a substrate in a chamber are provided. In one embodiment, the apparatus comprises a substrate support assembly having a support surface adapted to receive the substrate and a plurality of centering members for supporting the substrate at a distance parallel to the support surface and for centering the substrate relative to a reference axis substantially perpendicular to the support surface. The plurality of the centering members are movably disposed along a periphery of the support surface, and each of the plurality of centering members comprises a first end portion for either contacting or supporting a peripheral edge of the substrate.

Abstract translation: 提供了用于加热腔室中的衬底的方法和设备。 在一个实施例中，该设备包括基板支撑组件，该组件具有适于接收基板的支撑表面和用于在平行于支撑表面的距离处支撑基板并用于使基板相对于基准轴线基本垂直居中的多个定心构件 到支撑表面。 多个定心构件沿支撑表面的周边可移动地设置，并且多个定心构件中的每一个包括用于接触或支撑基板的周边边缘的第一端部。

公开(公告)号：WO2009009611A2

公开(公告)日：2009-01-15

申请号：PCT/US2008/069551

申请日：2008-07-09

Applicant: APPLIED MATERIALS, INC. ,  SHAH, Ashish ,  DU BOIS, Dale, R. ,  BALASUBRAMANIAN, Ganesh ,  FODOR, Mark, A. ,  KIM, Eui, Kyoon ,  CHAN, Chiu ,  JANAKIRAMAN, Karthik ,  NOWAK, Thomas ,  WERNER, Joseph, C. ,  SIVARAMAKRISHNAN, Visweswaren ,  AYOUB, Mohamad ,  AL-BAYATI, Amir ,  ZHOU, Jianhua

Inventor： SHAH, Ashish ,  DU BOIS, Dale, R. ,  BALASUBRAMANIAN, Ganesh ,  FODOR, Mark, A. ,  KIM, Eui, Kyoon ,  CHAN, Chiu ,  JANAKIRAMAN, Karthik ,  NOWAK, Thomas ,  WERNER, Joseph, C. ,  SIVARAMAKRISHNAN, Visweswaren ,  AYOUB, Mohamad ,  AL-BAYATI, Amir ,  ZHOU, Jianhua

IPC: C23F1/02

CPC classification number: H01L21/6719 ,  H01J37/32366 ,  H01J2237/3321 ,  H01L21/67201 ,  H01L21/67207

Abstract: Embodiments described herein relate to a substrate processing system that integrates substrate edge processing capabilities. Illustrated examples of the processing system include, without limitations, a factory interface, a loadlock chamber, a transfer chamber, and one or more twin process chambers having two or more processing regions that are isolatable from each other and share a common gas supply and a common exhaust pump. The processing regions in each twin process chamber include separate gas distribution assemblies and RF power sources to provide plasma at selective regions on a substrate surface in each processing region. Each twin process chamber is thereby configured to allow multiple, isolated processes to be performed concurrently on at least two substrates in the processing regions.

Abstract translation: 本文所述的实施例涉及集成衬底边缘处理能力的衬底处理系统。 处理系统的说明性示例包括但不限于工厂接口，负载锁定室，传送室和具有两个或更多个处理区域的一个或多个双处理室，其可彼此隔离并且共享公共气体供应和 普通排气泵。 每个双处理室中的处理区域包括单独的气体分配组件和RF功率源，以在每个处理区域中的衬底表面上的选择性区域提供等离子体。 因此，每个双处理室被配置为允许在处理区域中的至少两个基板上同时执行多个隔离过程。

公开(公告)号：WO2013077994A1

公开(公告)日：2013-05-30

申请号：PCT/US2012/063591

申请日：2012-11-05

Applicant: APPLIED MATERIALS, INC. ,  ZHOU, Jianhua

Inventor： ZHOU, Jianhua

IPC: H05H1/46 ,  H01L21/205 ,  C23C16/50

CPC classification number: H01J37/32091 ,  H01J37/32577

Abstract: Embodiments of the present invention provide an RF conducting rod comprising a hollow portion. Particularly, the RF conducting rod comprises an elongated hollow body having a sidewall enclosing an inner volume, a first solid connector extending from a first end of the elongated hollow body, and a second solid connector extending from a second end of the elongated hollow body. Each of the elongated hollow body, the first solid connector and the second solid connector is formed from an electrically conductive material.

Abstract translation: 本发明的实施例提供一种包括中空部分的RF导电棒。 特别地，RF导杆包括细长的中空本体，其具有封闭内部容积的侧壁，从细长中空体的第一端延伸的第一固体连接器和从细长中空体的第二端延伸的第二固体连接器。 每个细长的中空体，第一固体连接器和第二固体连接器由导电材料形成。

公开(公告)号：WO2012115913A3

公开(公告)日：2012-12-27

申请号：PCT/US2012025831

申请日：2012-02-20

Applicant: APPLIED MATERIALS INC ,  ZHOU JIANHUA ,  ROCHA-ALVAREZ JUAN CARLOS

Inventor： ZHOU JIANHUA ,  ROCHA-ALVAREZ JUAN CARLOS

IPC: H01L21/683 ,  H05B3/20

CPC classification number: H01L21/67248 ,  H01L21/67103 ,  Y10T29/49083

Abstract: The present invention provides systems, methods and apparatus for manufacturing a multi-zone pedestal heater. A multi-zone pedestal heater includes a heater plate which includes a first zone including a first heating element and a first thermocouple for sensing the temperature of the first zone wherein the first zone is disposed in the center of the heater plate; and a second zone including a second heating element and a first embedded thermocouple for sensing the temperature of the second zone wherein the first embedded thermocouple includes a first longitudinal piece that extends from a center of the heater plate to the second zone and the first longitudinal piece is entirely encased within the heater plate. Numerous additional aspects are disclosed.

Abstract translation: 本发明提供用于制造多区基座加热器的系统，方法和装置。 多区基座加热器包括加热板，加热板包括第一区域，第一区域包括第一加热元件和第一热电偶，用于感测第一区域的温度，其中第一区域设置在加热器板的中心; 以及第二区域，包括第二加热元件和用于感测第二区域的温度的第一嵌入式热电偶，其中第一嵌入式热电偶包括从加热器板的中心延伸到第二区域的第一纵向件和第一纵向件 被完全封装在加热器板内。 公开了许多附加方面。

公开(公告)号：WO2012054206A3

公开(公告)日：2012-06-21

申请号：PCT/US2011054014

申请日：2011-09-29

Applicant: APPLIED MATERIALS INC ,  BALUJA SANJEEV ,  ROCHA-ALVAREZ JUAN CARLOS ,  DEMOS ALEXANDROS T ,  NOWAK THOMAS ,  ZHOU JIANHUA

Inventor： BALUJA SANJEEV ,  ROCHA-ALVAREZ JUAN CARLOS ,  DEMOS ALEXANDROS T ,  NOWAK THOMAS ,  ZHOU JIANHUA

IPC: H01L21/3105 ,  H01L21/263

CPC classification number: C23C16/56 ,  C23C16/4405 ,  C23C16/45565 ,  C23C16/482 ,  H01L21/6719 ,  H01L21/67742 ,  Y10T137/0391

Abstract: Embodiments of the invention generally provide apparatuses and methods for controlling the gas flow profile within a processing chamber. In one embodiment, a processing tool includes an ultraviolet processing chamber defining a processing region, a substrate support, a window disposed between a UV radiation source and the substrate support, and a transparent showerhead disposed within the processing region between the window and the substrate support and having one or more transparent showerhead passages between upper and lower processing regions. The processing tool also includes a gas distribution ring having one or more gas distribution ring passages between a gas distribution ring inner channel and the upper processing region and a gas outlet ring positioned below the gas distribution ring, the gas outlet ring having one or more gas outlet passages between a gas outlet ring inner channel within the gas outlet ring and the lower processing region.

Abstract translation: 本发明的实施例通常提供用于控制处理室内的气流分布的装置和方法。 在一个实施例中，处理工具包括限定处理区域的紫外线处理室，衬底支撑件，设置在UV辐射源和衬底支撑件之间的窗口，以及布置在窗口和衬底支撑件之间的处理区域内的透明花洒 并且在上下处理区域之间具有一个或多个透明花洒通道。 处理工具还包括气体分配环，气体分配环具有在气体分配环内部通道和上部加工区域之间的一个或多个气体分配环通道和位于气体分配环下方的气体出口环，气体出口环具有一个或多个气体 气体出口环内的气体出口环内部通道和下部加工区域之间的出口通道。

公开(公告)号：WO2011143062A2

公开(公告)日：2011-11-17

申请号：PCT/US2011/035534

申请日：2011-05-06

Applicant: APPLIED MATERIALS, INC. ,  SANKARAKRISHNAN, Ramprakash ,  BALASUBRAMANIAN, Ganesh ,  ROCHA-ALVAREZ, Juan Carlos ,  DU BOIS, Dale R. ,  FODOR, Mark A. ,  ZHOU, Jianhua ,  BANSAL, Amit ,  AYOUB, Mohamad ,  SHAIKH, Shahid ,  REILLY, Patrick ,  PADHI, Deenesh ,  NOWAK, Thomas

Inventor： SANKARAKRISHNAN, Ramprakash ,  BALASUBRAMANIAN, Ganesh ,  ROCHA-ALVAREZ, Juan Carlos ,  DU BOIS, Dale R. ,  FODOR, Mark A. ,  ZHOU, Jianhua ,  BANSAL, Amit ,  AYOUB, Mohamad ,  SHAIKH, Shahid ,  REILLY, Patrick ,  PADHI, Deenesh ,  NOWAK, Thomas

IPC: H01L21/205

CPC classification number: H01L21/6719 ,  C23C16/46 ,  C23C16/5096 ,  H01J37/32495 ,  H01J37/32568 ,  H01J37/32651 ,  H01J37/32715

Abstract: An apparatus for plasma processing a substrate is provided. The apparatus comprises a processing chamber, a substrate support disposed in the processing chamber, a shield member disposed in the processing chamber below the substrate support, and a lid assembly coupled to the processing chamber. The lid assembly comprises a conductive gas distributor coupled to a power source, and an electrode separated from the conductive gas distributor and the chamber body by electrical insulators. The electrode is also coupled to a source of electric power. The substrate support is formed with a stiffness that permits very little departure from parallelism. The shield member thermally shields a substrate transfer opening in the lower portion of the chamber body. A pumping plenum is located below the substrate support processing position, and is spaced apart therefrom.

Abstract translation: 提供了一种用于等离子体处理衬底的装置。 该设备包括处理室，设置在处理室中的基板支撑件，设置在基板支撑件下方的处理室中的屏蔽构件，以及联接到处理室的盖组件。 盖组件包括耦合到电源的导电气体分配器和通过电绝缘体与导电气体分配器和室主体分离的电极。 电极也耦合到电源。 衬底支撑件形成有允许很少偏离平行度的刚度。 屏蔽构件对室主体的下部的基板传送开口进行热屏蔽。 泵送气室位于基板支撑处理位置下方，并与其间隔开。