公开(公告)号：WO2012005983A3

公开(公告)日：2012-01-12

申请号：PCT/US2011/041826

申请日：2011-06-24

Applicant: APPLIED MATERIALS, INC. ,  LEE, Dongsuh ,  WANG, Weijie ,  STERLING, William N. ,  KIM, Sam H. ,  CHOI, Soo Young ,  PARK, Beom Soo ,  KIM, Beom Soo ,  WANG, Qunhua

Inventor： LEE, Dongsuh ,  WANG, Weijie ,  STERLING, William N. ,  KIM, Sam H. ,  CHOI, Soo Young ,  PARK, Beom Soo ,  KIM, Beom Soo ,  WANG, Qunhua

IPC: H01L21/316 ,  H01L21/205 ,  C23C16/448

Abstract: Embodiments of the invention generally provide a mixing block for mixing precursors and/or cleaning agent which has the advantage of maintaining the temperature and improving the mixing effect of the precursors, cleaning agent or the mixture thereof to eliminate the substrate-to-substrate variation, thereby providing improved process uniformity.

公开(公告)号：WO2015016980A1

公开(公告)日：2015-02-05

申请号：PCT/US2014/024963

申请日：2014-03-12

Applicant: APPLIED MATERIALS, INC.

Inventor： ZHAO, Lai ,  FURUTA, Gaku ,  WANG, Qunhua ,  CHOI, Soo Young ,  LEE, Dongsuh ,  PARK, Beom Soo ,  YANG, Hsiao-Lin

IPC: C23C16/44 ,  C23C16/455

CPC classification number: C23C16/505 ,  C23C16/45565

Abstract: In one embodiment, a diffuser for a deposition chamber includes a plate having edge regions, corner regions and a center region, and plurality of gas passages comprising an orifice hole are formed between an upstream side and a downstream side of the plate, wherein one or more of a length or a diameter of the orifice holes in one or more of the corner regions or the edge regions of the plate is different than a corresponding length or a corresponding diameter of the orifice holes in the center region of the plate.

Abstract translation: 在一个实施例中，用于沉积室的扩散器包括具有边缘区域，拐角区域和中心区域的板，并且在板的上游侧和下游侧之间形成包括孔口的多个气体通道，其中一个或 在板的一个或多个拐角区域或边缘区域中的孔的更多的长度或直径不同于板的中心区域中的孔口的对应的长度或相应的直径。

公开(公告)号：WO2017105838A1

公开(公告)日：2017-06-22

申请号：PCT/US2016/064132

申请日：2016-11-30

Applicant: APPLIED MATERIALS, INC.

Inventor： KUDELA, Jozef ,  LAU, Allen K. ,  TINER, Robin L. ,  FURUTA, Gaku ,  WHITE, John M. ,  STERLING, William Norman ,  LEE, Dongsuh ,  ANWAR, Suhail ,  KURITA, Shinichi

IPC: C23C16/455 ,  C23C16/509

CPC classification number: H01J37/32449 ,  C23C16/45565 ,  C23C16/5096 ,  H01J37/32082 ,  H01J37/3244 ,  H01J37/32532 ,  H01J2237/3321

Abstract: In one embodiment, a diffuser for a deposition chamber includes a plate having edge regions and a center region, and plurality of gas passages comprising an upstream bore and an orifice hole fluidly coupled to the upstream bore that are formed between an upstream side and a downstream side of the plate, and a plurality of grooves surrounding the gas passages, wherein a depth of the grooves varies from the edge regions to the center region of the plate.

Abstract translation: 在一个实施例中，用于沉积室的扩散器包括具有边缘区域和中心区域的板，并且多个气体通道包括上游孔和与上游孔流体耦合的孔孔， 形成在所述板的上游侧和下游侧之间，以及围绕所述气体通道的多个凹槽，其中所述凹槽的深度从所述板的所述边缘区域到所述中心区域变化。

公开(公告)号：WO2017200733A1

公开(公告)日：2017-11-23

申请号：PCT/US2017/030212

申请日：2017-04-28

Applicant: APPLIED MATERIALS, INC.

Inventor： CHOI, Young-Jin ,  PARK, Beom Soo ,  LEE, Dongsuh ,  STERLING, William Norman ,  TINER, Robin L. ,  KURITA, Shinichi ,  ANWAR, Suhail ,  CHOI, Soo Young ,  CUI, Yi

IPC: C23C16/458 ,  C23C16/505

CPC classification number: C23C16/50 ,  C23C16/402 ,  C23C16/4581 ,  C23C16/4583 ,  H01L21/02274 ,  H01L21/0262 ,  H01L21/28556 ,  H01L21/68735 ,  H01L21/68742 ,  H01L21/68757 ,  H01L21/68785

Abstract: Embodiments described herein generally relate to a substrate support assembly. The substrate support assembly includes a support plate and a ceramic layer. The support plate has a top surface. The top surface includes a substrate receiving area configured to support a large area substrate and an outer area located outward of the substrate receiving area.

Abstract translation: 这里描述的实施例总体上涉及基板支撑组件。 基板支撑组件包括支撑板和陶瓷层。 支撑板具有顶面。 顶表面包括配置为支撑大面积基板的基板接收区域和位于基板接收区域外部的外部区域。

公开(公告)号：WO2018144452A1

公开(公告)日：2018-08-09

申请号：PCT/US2018/015945

申请日：2018-01-30

Applicant: APPLIED MATERIALS, INC.

Inventor： PARK, Beom Soo ,  LEE, Dongsuh ,  YANG, Hsiao-Lin ,  CHANG, Fu-Ting ,  AN, Hsiang ,  SU, Tsung-Yao

IPC: C23C16/458 ,  C23C16/505

CPC classification number: H01L21/205 ,  C23C8/36 ,  C23C16/4405 ,  C23C16/455 ,  C23C16/4586 ,  C23C16/505 ,  C23C16/517 ,  H01L21/02131 ,  H01L21/02274 ,  H01L21/68742 ,  H01L21/68757

Abstract: A method and apparatus for equalized plasma coupling is provided herein. Discontinuity marks, also known as golf tee mura, are eliminated or minimized by biasing or grounding lift pins disposed in openings towards the center of a substrate support. To prevent shorting between a biased or grounded lift pin and the substrate support, lift pins are electrically isolated from the substrate support. The electrical isolation of the lift pin includes coating the lift pins with an electrically insulating material or lining a respective substrate support opening with an electrically insulating material.

公开(公告)号：WO2014018480A1

公开(公告)日：2014-01-30

申请号：PCT/US2013/051572

申请日：2013-07-23

Applicant: APPLIED MATERIALS, INC

Inventor： LEE, Dongsuh ,  PARK, Beom Soo ,  CUI, Yi ,  STERLING, William N.

IPC: C23C16/455

CPC classification number: F01D9/02 ,  C23C16/24 ,  C23C16/45563 ,  C23C16/5096

Abstract: The present invention provides methods and apparatus for a gas diffusion assembly in a deposition processing chamber. The invention includes a backing plate having an inlet for providing a process gas to a process chamber, a diffusion plate including a plurality of apertures for allowing the process gas to flow into the process chamber,a blocking plate disposed between the backing plate and the diffusion plate and including a plurality of apertures, and at least one gas flow guide disposed between the blocking plate and the backing plate and adapted to direct process gas flow laterally. Numerous additional features are disclosed.

Abstract translation: 本发明提供了一种用于沉积处理室中的气体扩散组件的方法和装置。 本发明包括具有用于向处理室提供工艺气体的入口的背板，包括用于使工艺气体流入处理室的多个孔的扩散板，设置在背板和扩散层之间的阻挡板 并且包括多个孔，以及至少一个气体流动引导件，其布置在阻挡板和背板之间并且适于引导横向流动气体流动。 公开了许多附加特征。

公开(公告)号：WO2014018285A1

公开(公告)日：2014-01-30

申请号：PCT/US2013/050365

申请日：2013-07-12

Applicant: APPLIED MATERIALS, INC. ,  LEE, Dongsuh ,  STERLING, William, N. ,  PARK, Beom, Soo ,  CHOI, Soo, Young

Inventor： LEE, Dongsuh ,  STERLING, William, N. ,  PARK, Beom, Soo ,  CHOI, Soo, Young

IPC: C23C16/458 ,  B24C1/00

CPC classification number: B24C1/06 ,  B24C1/00 ,  C23C16/4581 ,  H01L21/68757

Abstract: The present invention generally relates to a substrate support for use in a substrate processing chamber. A roughened substrate support reduces arcing within the chamber and also contributes to uniform deposition on the substrate. The roughening can occur in two steps. In a first step, the substrate support is bead blasted to initially roughen the surfaces. Then, the roughened surface is bead blasted with a finer grit to produce a substrate support with a surface roughness of between about 707 micro-inches and about 837 micro-inches. Following the surface roughening, the substrate support is anodized.

Abstract translation: 本发明一般涉及用于衬底处理室的衬底支撑件。 粗糙化的基底支撑件减少了腔内的电弧，并且还有助于衬底上的均匀沉积。 粗糙化可以分两步进行。 在第一步骤中，将基底支撑体喷砂以最初粗糙化表面。 然后，粗糙表面用更细的砂砾进行喷砂处理以产生表面粗糙度在约707微英寸至约837微英寸之间的基底支撑体。 在表面粗糙化之后，将基底支撑体阳极氧化。