公开(公告)号：WO2015016980A1

公开(公告)日：2015-02-05

申请号：PCT/US2014/024963

申请日：2014-03-12

Applicant: APPLIED MATERIALS, INC.

Inventor： ZHAO, Lai ,  FURUTA, Gaku ,  WANG, Qunhua ,  CHOI, Soo Young ,  LEE, Dongsuh ,  PARK, Beom Soo ,  YANG, Hsiao-Lin

IPC: C23C16/44 ,  C23C16/455

CPC classification number: C23C16/505 ,  C23C16/45565

Abstract: In one embodiment, a diffuser for a deposition chamber includes a plate having edge regions, corner regions and a center region, and plurality of gas passages comprising an orifice hole are formed between an upstream side and a downstream side of the plate, wherein one or more of a length or a diameter of the orifice holes in one or more of the corner regions or the edge regions of the plate is different than a corresponding length or a corresponding diameter of the orifice holes in the center region of the plate.

Abstract translation: 在一个实施例中，用于沉积室的扩散器包括具有边缘区域，拐角区域和中心区域的板，并且在板的上游侧和下游侧之间形成包括孔口的多个气体通道，其中一个或 在板的一个或多个拐角区域或边缘区域中的孔的更多的长度或直径不同于板的中心区域中的孔口的对应的长度或相应的直径。

公开(公告)号：WO2012092020A3

公开(公告)日：2012-07-05

申请号：PCT/US2011/066124

申请日：2011-12-20

Applicant: APPLIED MATERIALS, INC. ,  WON, Tae Kyung ,  NOMINANDA, Helinda ,  CHO, Seon-Mee ,  CHOI, Soo Young ,  PARK, Beom Soo ,  WHITE, John M. ,  ANWAR, Suhail ,  KUDELA, Jozef

Inventor： WON, Tae Kyung ,  NOMINANDA, Helinda ,  CHO, Seon-Mee ,  CHOI, Soo Young ,  PARK, Beom Soo ,  WHITE, John M. ,  ANWAR, Suhail ,  KUDELA, Jozef

IPC: H01L21/205

Abstract: Embodiments of the present invention generally provide deposition processes for a silicon-containing dielectric layer using an improved microwave-assisted CVD chamber. In one embodiment, a method of processing a substrate in a processing chamber is provided. The method generally includes applying a microwave power to an antenna coupled to a microwave source disposed within the processing chamber, wherein the microwave source is disposed relatively above a gas feeding source configured to provide a gas distribution coverage covering substantially an entire surface of the substrate, and exposing the substrate to a microwave plasma generated from a processing gas provided by the gas feeding source to deposit a silicon-containing layer on the substrate at a temperature lower than about 200 degrees Celsius, the microwave plasma using a microwave power of about 500 milliWatts/cm 2 to about 5,000 milliWatts/cm 2 at a frequency of about 1 GHz to about 10 GHz.

公开(公告)号：WO2008079742A2

公开(公告)日：2008-07-03

申请号：PCT/US2007/087597

申请日：2007-12-14

Applicant: APPLIED MATERIALS, INC. ,  WHITE, John, M. ,  PARK, Beom Soo ,  TINER, Robin, L. ,  CHOI, Soo Young

Inventor： WHITE, John, M. ,  PARK, Beom Soo ,  TINER, Robin, L. ,  CHOI, Soo Young

IPC: C23C16/00 ,  H05H1/24

CPC classification number: C23C16/4585 ,  C23C16/4586 ,  H01J37/32495 ,  H01J37/32623

Abstract: A method and apparatus for processing a substrate are provided. The chamber body comprises a chamber bottom and a sidewall having a slit valve. A substrate support comprising a support body is disposed in the chamber body. A first end of at least one wide RF ground strap is coupled with the support body and a second end of at least one RF ground strap is coupled with the chamber bottom. At least one extension bar is positioned along a peripheral edge of the support body. The method comprises providing a processing chamber having a slit valve and a substrate support, providing RF power to a distribution plate disposed over the substrate support, flowing gas through the distribution plate, plasma processing a substrate disposed on the substrate support, and reducing the generation of plasma adjacent to the slit valve.

Abstract translation: 提供了一种用于处理衬底的方法和设备。 腔室主体包括腔室底部和具有狭缝阀的侧壁。 包括支撑体的衬底支撑件设置在腔室主体中。 至少一个宽RF接地带的第一端与支撑体耦合，并且至少一个RF接地带的第二端与室底部耦合。 至少一个延伸杆沿支撑体的周边边缘定位。 该方法包括提供具有狭缝阀和基板支撑件的处理腔室，向设置在基板支撑件上方的分配板提供RF功率，使气体流过分配板，等离子体处理设置在基板支撑件上的基板，并且减少产生 与狭缝阀相邻的等离子体。

公开(公告)号：WO2013040127A2

公开(公告)日：2013-03-21

申请号：PCT/US2012/055009

申请日：2012-09-13

Applicant: APPLIED MATERIALS, INC. ,  WHITE, John M. ,  ANWAR, Suhail ,  KUDELA, Jozef ,  SORENSEN, Carl A. ,  WON, Tae K. ,  CHO, Seon-Mee ,  CHOI, Soo Young ,  PARK, Beom Soo ,  JOHNSTON, Benjamin M.

Inventor： WHITE, John M. ,  ANWAR, Suhail ,  KUDELA, Jozef ,  SORENSEN, Carl A. ,  WON, Tae K. ,  CHO, Seon-Mee ,  CHOI, Soo Young ,  PARK, Beom Soo ,  JOHNSTON, Benjamin M.

IPC: C23C16/44 ,  C23C16/455 ,  H01L21/205

CPC classification number: C23C16/455 ,  C23C16/45578 ,  C23C16/4587 ,  C23C16/511 ,  C23C16/513 ,  C23C16/54

Abstract: An apparatus for introducing gas into a processing chamber comprising one or more gas distribution tubes having gas-injection holes which may be larger in size, greater in number, and/or spaced closer together at sections of the gas introduction tubes where greater gas conductance through the gas-injection holes is desired. An outside tube having larger gas-injection holes may surround each gas distribution tube. The gas distribution tubes may be fluidically connected to a vacuum foreline to facilitate removal of gas from the gas distribution tube at the end of a process cycle.

Abstract translation: 用于将气体引入处理室的设备包括一个或多个气体分配管，所述气体分配管具有尺寸更大，数量更多和/ 气体引入管，其中气体注入孔需要更大的气体传导。 具有较大气体喷射孔的外部管可以围绕每个气体分配管。 气体分配管可以流体连接到真空前级管路上，以便于在处理循环结束时从气体分配管中除去气体。

公开(公告)号：WO2012005983A3

公开(公告)日：2012-01-12

申请号：PCT/US2011/041826

申请日：2011-06-24

Applicant: APPLIED MATERIALS, INC. ,  LEE, Dongsuh ,  WANG, Weijie ,  STERLING, William N. ,  KIM, Sam H. ,  CHOI, Soo Young ,  PARK, Beom Soo ,  KIM, Beom Soo ,  WANG, Qunhua

Inventor： LEE, Dongsuh ,  WANG, Weijie ,  STERLING, William N. ,  KIM, Sam H. ,  CHOI, Soo Young ,  PARK, Beom Soo ,  KIM, Beom Soo ,  WANG, Qunhua

IPC: H01L21/316 ,  H01L21/205 ,  C23C16/448

Abstract: Embodiments of the invention generally provide a mixing block for mixing precursors and/or cleaning agent which has the advantage of maintaining the temperature and improving the mixing effect of the precursors, cleaning agent or the mixture thereof to eliminate the substrate-to-substrate variation, thereby providing improved process uniformity.

公开(公告)号：WO2011094311A2

公开(公告)日：2011-08-04

申请号：PCT/US2011/022577

申请日：2011-01-26

Applicant: APPLIED MATERIALS, INC. ,  BAEK, Jonghoon ,  KIM, Sam H. ,  PARK, Beom Soo

Inventor： BAEK, Jonghoon ,  KIM, Sam H. ,  PARK, Beom Soo

IPC: C23C16/44 ,  C23C16/50

CPC classification number: C23C16/505

Abstract: Embodiments disclosed herein generally relate to a PECVD apparatus. When the RF power source is coupled to the electrode at multiple locations, the current and voltage may be different at the multiple locations. In order to ensure that both the current and voltage are substantially identical at the multiple locations, an RF bridge assembly may be coupled between the multiple locations at a location just before connection to the electrode. The RF bridge assembly substantially equalizes the voltage distribution and current distribution between multiple locations. Therefore, a substantially identical current and voltage is applied to the electrode at the multiple locations.

Abstract translation: 本文公开的实施例一般涉及PECVD装置。 当RF电源在多个位置耦合到电极时，电流和电压在多个位置可能是不同的。 为了确保电流和电压在多个位置处基本相同，RF桥组件可以在刚刚连接到电极之前的位置处耦合在多个位置之间。 RF桥组件基本上均衡多个位置之间的电压分布和电流分布。 因此，在多个位置处对电极施加基本相同的电流和电压。

公开(公告)号：WO2009129391A2

公开(公告)日：2009-10-22

申请号：PCT/US2009/040811

申请日：2009-04-16

Applicant: APPLIED MATERIALS, INC. ,  YANG, Ya-Tang ,  PARK, Beom Soo ,  WON, Tae Kyung ,  CHOI, Soo Young ,  WHITE, John, M.

Inventor： YANG, Ya-Tang ,  PARK, Beom Soo ,  WON, Tae Kyung ,  CHOI, Soo Young ,  WHITE, John, M.

IPC: H01L29/786

CPC classification number: H01L29/4908 ,  H01L29/66765

Abstract: A method and apparatus for forming a thin film transistor is provided. A gate dielectric layer is formed, which may be a bilayer, the first layer deposited at a low rate and the second deposited at a high rate. In some embodiments, the first dielectric layer is a silicon rich silicon nitride layer. An active layer is formed, which may also be a bilayer, the first active layer deposited at a low rate and the second at a high rate. The thin film transistors described herein have superior mobility and stability under stress.

Abstract translation: 提供一种用于形成薄膜晶体管的方法和装置。 形成栅电介质层，其可以是双层，第一层以低速率沉积，第二层以高速率沉积。 在一些实施例中，第一介电层是富硅的氮化硅层。 形成有源层，其也可以是双层，第一有源层以低速率沉积，第二有效层以高速率沉积。 本文所述的薄膜晶体管在应力下具有优异的迁移率和稳定性。

公开(公告)号：WO2018144452A1

公开(公告)日：2018-08-09

申请号：PCT/US2018/015945

申请日：2018-01-30

Applicant: APPLIED MATERIALS, INC.

Inventor： PARK, Beom Soo ,  LEE, Dongsuh ,  YANG, Hsiao-Lin ,  CHANG, Fu-Ting ,  AN, Hsiang ,  SU, Tsung-Yao

IPC: C23C16/458 ,  C23C16/505

CPC classification number: H01L21/205 ,  C23C8/36 ,  C23C16/4405 ,  C23C16/455 ,  C23C16/4586 ,  C23C16/505 ,  C23C16/517 ,  H01L21/02131 ,  H01L21/02274 ,  H01L21/68742 ,  H01L21/68757

Abstract: A method and apparatus for equalized plasma coupling is provided herein. Discontinuity marks, also known as golf tee mura, are eliminated or minimized by biasing or grounding lift pins disposed in openings towards the center of a substrate support. To prevent shorting between a biased or grounded lift pin and the substrate support, lift pins are electrically isolated from the substrate support. The electrical isolation of the lift pin includes coating the lift pins with an electrically insulating material or lining a respective substrate support opening with an electrically insulating material.

公开(公告)号：WO2017222974A1

公开(公告)日：2017-12-28

申请号：PCT/US2017/038117

申请日：2017-06-19

Applicant: APPLIED MATERIALS, INC.

Inventor： CUI, Yi ,  TINER, Robin L. ,  PARK, Beom Soo ,  CHOI, Soo Young ,  KURITA, Shinichi

IPC: H01J37/32 ,  H01L21/205

CPC classification number: H01J37/32651 ,  C23C16/4585 ,  C23C16/4586 ,  C23C16/505 ,  H01J37/32449 ,  H01J37/32467 ,  H01J37/32532 ,  H01J37/32577 ,  H01J37/32715 ,  H01J2237/3321 ,  H01L21/68742 ,  H01L21/68785 ,  H05K9/002

Abstract: Embodiments described herein generally relate to a substrate support assembly having a shield cover. In one embodiment, a substrate support assembly is disclosed herein. The substrate support assembly includes a support plate, a plurality of RF return straps, at least one shield cover, and a stem. The support plate is configured to support a substrate. The plurality of RF return straps are coupled to a bottom surface of the support plate. At least one shield cover is coupled to the bottom surface of the support plate, between the plurality of RF return straps and the bottom surface. The stem is coupled to the support plate.

Abstract translation: 这里描述的实施例一般涉及具有屏蔽罩的衬底支撑组件。 在一个实施例中，本文公开了衬底支撑组件。 基板支撑组件包括支撑板，多个RF返回带，至少一个屏蔽盖和杆。 支撑板构造成支撑基板。 多个RF返回带连接到支撑板的底表面。 至少一个屏蔽盖联接到支撑板的底表面上，在多个RF返回带和底表面之间。 杆连接到支撑板。

公开(公告)号：WO2015116433A1

公开(公告)日：2015-08-06

申请号：PCT/US2015/012014

申请日：2015-01-20

Applicant: APPLIED MATERIALS, INC.

Inventor： ZHAO, Lai ,  FURUTA, Gaku ,  WANG, Qunhua ,  TINER, Robin L. ,  PARK, Beom Soo ,  CHOI, Soo Young ,  YADAV, Sanjay D.

IPC: G02F1/13

CPC classification number: C23C16/45591 ,  C23C16/45559 ,  C23C16/45563 ,  C23C16/4585 ,  H01J37/32091 ,  H01J37/32623 ,  H01J37/32651

Abstract: The present disclosure relates to a corner spoiler designed to decrease high deposition rates on corner regions of substrates by changing the gas flow. In one embodiment, a corner spoiler for a processing chamber includes an L-shaped body fabricated from a dielectric material, wherein the L-shaped body is configured to change plasma distribution at a corner of a substrate in the processing chamber. The L-shaped body includes a first and second leg, wherein the first and second legs meet at an inside corner of the L-shaped body. The length of the first or second leg is twice the distance defined between the first or second leg and the inside corner. In another embodiment, a shadow frame for a depositing chamber includes a rectangular shaped body having a rectangular opening therethrough, and one or more corner spoilers coupled to the rectangular shaped body at corners of the rectangular shaped body.

Abstract translation: 本发明涉及一种设计用于通过改变气体流量来降低基板拐角区域的高沉积速率的拐角扰流板。 在一个实施例中，用于处理室的拐角扰流板包括由介电材料制成的L形主体，其中L形主体被配置为改变处理室中的基板角落处的等离子体分布。 L形本体包括第一和第二腿，其中第一和第二腿在L形体的内角处相交。 第一腿或第二腿的长度是在第一腿或第二腿与内角之间限定的距离的两倍。 在另一个实施例中，用于沉积室的阴影框架包括具有矩形开口的矩形体，以及在矩形体的角落处联接到矩形体的一个或多个拐角扰流板。