公开(公告)号：WO2020173654A1

公开(公告)日：2020-09-03

申请号：PCT/EP2020/052261

申请日：2020-01-30

Applicant: ASML NETHERLANDS B.V.

Inventor： WANG, ChangAn ,  WANG, Alvin, Jianjiang ,  LIANG, Jiao ,  WANG, Jen-Shiang ,  FENG, Mu

IPC: G03F1/36 ,  G03F7/20 ,  G03F9/00 ,  G03F1/00 ,  G06T7/00 ,  G06T5/50

Abstract: Described herein is a method for determining measurement data of a printed pattern on a substrate. The method involves obtaining (i) raw images (402) of the substrate comprising a printed pattern corresponding to a reference pattern (401), (ii) an averaged image (403) of the raw images, and (iii) a composite contour (404) based on the averaged image. Further, the composite contour is aligned with respect to a reference contour of the reference pattern and raw contours (415) are extracted from raw images based on both the aligned composite contour and the output of die-to-database alignment of the composite contour (419). Further, the method determines a plurality of pattern measurements (425) based on the raw contours and the measurement data corresponding to the printed patterns based on the plurality of the pattern measurements. Further, the method determines a plurality of process variation such as stochastic variation, inter-die variation, intra-die variation and total variation.

公开(公告)号：WO2020035285A1

公开(公告)日：2020-02-20

申请号：PCT/EP2019/070142

申请日：2019-07-26

Applicant: ASML NETHERLANDS B.V.

Inventor： ZHANG, Chen ,  ZHANG, Qiang ,  WANG, Jen-Shiang ,  LIANG, Jiao

IPC: G03F7/20 ,  G06T7/00 ,  G01N21/956

Abstract: A method for evaluating images of a printed pattern is implemented by at least one programmable processor. The method includes obtaining (2310,2320) a first averaged image of the printed pattern, where the first averaged image is generated by averaging raw images of the printed pattern. The method also includes identifying (2330) one or more features of the first averaged image. The method further includes evaluating (2340) the first averaged image, by the programmable processor executing an image quality classification model and based at least on the one or more features. The evaluating includes determining (2350), by the image quality classification model, whether the first averaged image satisfies a metric.

公开(公告)号：WO2023088641A1

公开(公告)日：2023-05-25

申请号：PCT/EP2022/079676

申请日：2022-10-24

Applicant: ASML NETHERLANDS B.V.

Inventor： REN, Jiaxing ,  CHEN, Yi-Yin ,  FAN, Yongfa ,  LIANG, Jiao

IPC: G03F1/36 ,  G03F7/20 ,  G06T17/20

Abstract: A grid dependency check for a simulation model is described. According to embodiments of the present disclosure, a grid dependency check can be advantageously performed faster and more efficiently compared to prior grid dependency checks. Certain portions of a design layout are selected and cropped to the minimum size required by the model, and used to generate a second design layout. 5 The selected portions are rotated and/or shifted relative to the grid to form one or more moved portions. The second design layout includes the one or more selected portions and the one or more moved portions so that a modeling operation (e.g., model apply) needs to only run a single time instead of multiple times as in the prior grid dependency checks.

公开(公告)号：WO2021228725A1

公开(公告)日：2021-11-18

申请号：PCT/EP2021/062227

申请日：2021-05-07

Applicant: ASML NETHERLANDS B.V.

Inventor： HUANG, Jiao ,  ZHENG, Yunan ,  ZHAO, Qian ,  LIANG, Jiao ,  FAN, Yongfa ,  FENG, Mu

IPC: G03F7/20 ,  G06T7/00 ,  G06T7/11

Abstract: Systems and methods for determining one or more characteristic metrics for a portion of a pattern on a substrate are described. Pattern information for the pattern on the substrate is received. The pattern on the substrate has first and second portions. The first portion (404A,406B) of the pattern is blocked (400,402), for example with a geometrical block mask (408,410), based on the pattern information, such that the second portion of the pattern remains unblocked. The one or more metrics are determined for the unblocked second portion of the pattern. In some embodiments, the first and second portions of the pattern correspond to different exposures in a semiconductor lithography process. The semiconductor lithography process may be a multiple patterning technology process, for example, such as a double patterning process, a triple patterning process, or a spacer double patterning process.

公开(公告)号：WO2020011513A1

公开(公告)日：2020-01-16

申请号：PCT/EP2019/066520

申请日：2019-06-21

Applicant: ASML NETHERLANDS B.V.

Inventor： LIANG, Jiao ,  ZHANG, Chen ,  ZHANG, Qiang ,  GUO, Yunbo

IPC: G03F7/20

Abstract: A method for improving a process model by measuring a feature on a printed design that was constructed based in part on a target design is disclosed. The method includes obtaining a) an image of the printed design from an image capture device and b) contours based on shapes in the image. The method also includes identifying, by a pattern recognition program, patterns on the target design that include the feature and determining coordinates, on the contours, that correspond to the feature. The method further includes improving the process model by at least a) providing a measurement of the feature based on the coordinates and b) calibrating the process model based on a comparison of the measurement with a corresponding feature in the target design.