摘要:
Polymers comprising at least one unit of formula (1) wherein n is 0 or 1, m and p are independently from each other 0,1,2,3,4,5 or 6, provided that the sum of n, m and p is at least 2, and n and p are not 0 at the same time, Ar 1 and Ar 2 are independently from each other C 6-14 -arylene or C 6-14 -aryl,which may be substituted with 1 to 4 substituents independently selected from the group consisting of C 1-30 -alkyl, C 2-30 -alkenyl, C 2-30 -alkynyl, C 5-8 -cycloalkyl, C 6-14 -aryl and 5 to 14 membered heteroaryl, and X 1 ,X 2 and X 3 are independently from each other and at each occurrence O or S, compositions comprising these polymers, and electronic devices comprising a layer formed from the compositions. Preferably, the electronic device is an organic field effect transistor and the layer is the dielectric layer.
摘要:
The present invention provides compounds of formula (1) a process for their preparation, a solution comprising these compounds, a process for the preparation of a device using the solution, devices obtainable by the process and the use of the bis-azide-type compounds as cross-linkers.
摘要:
The present invention relates to an electronic device comprising a dielectric material, which dielectric material comprises a copolymer comprising styrene and maleimic acid and derivatives thereof as structural units, a process for the preparation of the electronic device and to the use of the copolymer as dielectric material, especially as dielectric layer in printed electronic devices such as capacitors and organic field-effect transistors.
摘要:
Polyimidesderived from a primary aromatic diamine and aromatic dianhydride mono- mer moieties, wherein one or more of said moieties contain at least one substituent on the aromatic ring selected from propyl and butyl, especially from isopropyl, isobutyl, tert.butyl, show good solubility and are well suitable as dielectric material in electronic devices such as capacitors and organic field effect transistors.
摘要:
The present invention provides compositions comprising a) at least one polymer consisting of one polymerblock A and at least two polymerblocks B, wherein each polymerblock B is attached to the polymerblock A, and wherein at least 60 mol% of the monomer units of polymerblock B are selected from the group consisting of Formulae (1A), (1B), (1C), (1D), (1E), (1F) and 1G, 1H and 1I wherein R 1 , R 2 , R 3 , R 4 , R 5 , R 6 , R 7 and R 8 are independently and at each occurrence H or C 1-10 -alkyl, and b) at least one crosslinking agent carrying at least two azide groups, as well as to layers formed from these compositions, electronic devices comprising these layers and to specific polymers encompassed by the polymers of the composition.
摘要翻译:本发明提供组合物,其包含a)至少一种由一个聚合物嵌段A和至少两个聚合物嵌段B组成的聚合物,其中每个聚合物嵌段B连接到聚合物嵌段A上,并且其中至少60mol% (1A),(1B),(1C),(1D),(1E),(1F)和1G,1H和1I的聚合物嵌段B的单体单元选自其中R 1 R 2,R 3,R 4,R 5,R 6,R 5,R 5,R 5,R 5, R 7和R 8独立地在每次出现时为H或C 1-10 1-10烷基,和b)在 至少一种携带至少两个叠氮基团的交联剂,以及由这些组合物形成的层,包含这些层的电子器件以及包含在组合物的聚合物中的特定聚合物。 p>
摘要:
The present invention provides polymers comprising units of formulae (I) and (II) wherein a wavy line represents a valency, Ar 1 , Ar 2 and Ar 3 are independently from each other C 6-14 -aryl, which can be substituted with 1 to 9 substituents R a , wherein R a is at each occurrence selected from the group consisting of C 1-30 -alkyl, O-C 1-30 -alkyl, C 6-14 -aryl and O-C 6-14 -aryl, and R 1 is H or C 1-4 -alkyl, and at least one an n-valent unit X, wherein n is an integer from 3 to 10, as well as electronic devices comprising these polymers.
摘要:
Oxacycloolefinic polymers as typically obtained by metathesis polymerization using Ru-catalysts, show good solubility and are well suitable as dielectric material in electronic devices such as capacitors and organic field effect transistors.
摘要:
The present invention provides a process for the preparation of a transistor on a substrate, which transistor comprises a layer, which layer comprises polyimide B, which process comprises the steps of i) forming a layer comprising photocurable polyimide A by applying photocur- able polyimide A on a layer of the transistor or on the substrate ii) irradiating the layer comprising photocurable polyimide A with light of a wavelength of > = 360 nm in order to form the layer comprising polyimide B, and a transistor obtainable by that process.