公开(公告)号：WO2021202076A1

公开(公告)日：2021-10-07

申请号：PCT/US2021/021851

申请日：2021-03-11

申请人： CREE, INC.

发明人： NOORI, Basim ,  MARBELL, Marvin ,  LIM, Kwangmo, Chris ,  MU, Qianli

IPC分类号： H03F1/56 ,  H03F3/189 ,  H03F3/213 ,  H03F3/195 ,  H01L23/66 ,  H01L23/48 ,  H01L23/498 ,  H01L23/538 ,  H03F1/02 ,  H01L25/065 ,  H01L2223/6622 ,  H01L2223/6655 ,  H01L2223/6672 ,  H01L2223/6683 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2225/06548 ,  H01L23/3677 ,  H01L23/4824 ,  H01L23/49861 ,  H01L23/5384 ,  H01L23/5385 ,  H01L23/5386 ,  H01L23/64 ,  H01L25/0652 ,  H01L25/0657 ,  H01L29/1608 ,  H03F1/0288 ,  H03F1/565 ,  H03F2200/222 ,  H03F2200/387 ,  H03F2200/451 ,  H03F3/193

摘要： A radio frequency (RF) power amplifier device package includes a substrate and a first die attached to the substrate at a bottom surface of the first die. The first die includes top gate or drain contacts on a top surface of the first die opposite the bottom surface. At least one of the top gate or drain contacts is electrically connected to a respective bottom gate or drain contact on the bottom surface of the first die by a respective conductive via structure. An integrated interconnect structure, which is on the first die opposite the substrate, includes a first contact pad on the top gate contact or the top drain contact of the first die, and at least one second contact pad connected to a package lead, a contact of a second die, impedance matching circuitry, and/or harmonic termination circuitry.

公开(公告)号：WO2022271254A1

公开(公告)日：2022-12-29

申请号：PCT/US2022/023364

申请日：2022-04-04

申请人： XILINX, INC.

发明人： WU, Zhaoyin Daniel ,  UPADHYAYA, Parag ,  SHI, Hong

IPC分类号： H01L23/64 ,  H01F17/00 ,  H01L25/065 ,  H01L23/538 ,  H01L23/528 ,  H01L21/60 ,  H01L23/522 ,  H01F17/0006 ,  H01F2017/0073 ,  H01L2223/6638 ,  H01L2223/6655 ,  H01L2223/6672 ,  H01L2223/6677 ,  H01L2224/0401 ,  H01L2224/16227 ,  H01L2224/16235 ,  H01L2224/16265 ,  H01L23/5227 ,  H01L23/645 ,  H01L24/16 ,  H01L25/0655 ,  H01L2924/1433 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/19042 ,  H01L2924/19103 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01Q1/2283

摘要： A package device comprises a first transceiver (110) comprising a first integrated circuit (IC) die and transmitter circuitry (112), and a second transceiver (120) comprising a second IC die and receiver circuitry (124). The receiver circuitry is coupled to the transmitter circuitry via a channel (140). The package device further comprises an interconnection device (130) connected to the first IC die and the second IC die. The interconnection device comprises the channel (140) connecting the transmitter circuitry with the receiver circuitry, and a passive inductive element (142) disposed external to the first IC die and the second IC die and along the channel.

公开(公告)号：WO2022240713A1

公开(公告)日：2022-11-17

申请号：PCT/US2022/028260

申请日：2022-05-09

申请人： TEXAS INSTRUMENTS INCORPORATED

发明人： SADOVNIKOV, Alexei ,  HAYNIE, Sheldon, Douglas ,  RADHAKRISHNA, Ujwal

IPC分类号： H01L29/40 ,  H01L29/78 ,  H01L2223/6672 ,  H01L23/647 ,  H01L29/0653 ,  H01L29/165 ,  H01L29/401 ,  H01L29/404 ,  H01L29/407 ,  H01L29/42368 ,  H01L29/66659 ,  H01L29/66681 ,  H01L29/7816 ,  H01L29/7835

摘要： A microelectronic device (100) includes a doped region (110) of semiconductor material (104) having a first region (116) and an opposite second region (120). The microelectronic device (100) is configured to provide a first operational potential at the first region (116) and to provide a second operational potential at the second region (120). The microelectronic device (100) includes field plate segments (140) in trenches (124) extending into the doped region (110). Each field plate segment (140) is separated from the semiconductor material (104) by a trench liner (128) of dielectric material. The microelectronic device (100) further includes circuitry (158) electrically connected to each of the field plate segments (140). The circuitry (158) is configured to apply bias potentials to the field plate segments (140). The bias potentials are monotonic with respect to distances of the field plate segments (140) from the first region (116) of the doped region (110).

公开(公告)号：WO2021202075A1

公开(公告)日：2021-10-07

申请号：PCT/US2021/021848

申请日：2021-03-11

申请人： CREE, INC.

发明人： NOORI, Basim ,  MARBELL, Marvin ,  LIM, Kwangmo Chris ,  MU, Qianli

IPC分类号： H01L23/66 ,  H01L23/538 ,  H01L25/07 ,  H01L23/31 ,  H01L2223/6611 ,  H01L2223/6655 ,  H01L2223/6672 ,  H01L2223/6683 ,  H01L2224/06181 ,  H01L23/3677 ,  H01L23/49503 ,  H01L23/49531 ,  H01L23/49548 ,  H01L23/49589 ,  H01L23/5385 ,  H01L23/5386 ,  H01L24/18 ,  H01L25/0657 ,  H01L25/072 ,  H01L29/1608 ,  H01L29/2003 ,  H01L2924/19107 ,  H03F3/193 ,  H03F3/195 ,  H03F3/213

摘要： An integrated circuit device package includes a substrate, a first die comprising active electronic components attached to the substrate, and package leads configured to conduct electrical signals between the first die and an external device. At least one integrated interconnect structure is provided on the first die opposite the substrate. The at least one integrated interconnect structure extends from the first die to an adjacent die attached to the substrate and/or to at least one of the package leads, and provides electrical connection therebetween. Related devices and power amplifier circuits are also discussed.

公开(公告)号：WO2021202074A1

公开(公告)日：2021-10-07

申请号：PCT/US2021/021845

申请日：2021-03-11

申请人： CREE, INC.

发明人： WILSON, Richard ,  CHIDURALA, Madhu

IPC分类号： H01L23/66 ,  H03F1/56 ,  H01L2223/6611 ,  H01L2223/6655 ,  H01L2223/6672 ,  H01L2223/6683 ,  H01L2224/08145 ,  H01L2224/08225 ,  H01L2224/16145 ,  H01L2224/48137 ,  H01L2224/48157 ,  H01L2224/48195 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L23/04 ,  H01L23/057 ,  H01L23/4334 ,  H01L23/49531 ,  H01L23/49811 ,  H01L23/49827 ,  H01L24/08 ,  H01L24/48 ,  H01L25/18 ,  H01L2924/19107

摘要： A multi-level radio frequency (RF) integrated circuit component includes an upper level including at least one inductor, and a lower level including at least one conductive element that provides electrical connection to the at least one inductor. The lower level separates the at least one inductor from a lower surface that is configured to be attached to a conductive pad. Related integrated circuit device packages are also discussed.

公开(公告)号：WO2021195506A1

公开(公告)日：2021-09-30

申请号：PCT/US2021/024375

申请日：2021-03-26

申请人： MACOM TECHNOLOGY SOLUTIONS HOLDINGS, INC.

发明人： CARLSON, Douglas ,  BOLES, Timothy E. ,  STRUBLE, Wayne Mack

IPC分类号： H01L27/12 ,  H01L21/84 ,  H01L21/8258 ,  H01L21/76224 ,  H01L21/8252 ,  H01L2223/6672 ,  H01L2223/6683 ,  H01L23/66 ,  H01L27/0605 ,  H01L27/0629 ,  H01L27/1207

摘要： Various integrated circuits formed using gallium nitride and other materials are described. In one example, an integrated circuit includes a first integrated device formed over a first semiconductor structure in a first region of the integrated circuit, a second integrated device formed over a second semiconductor structure in a second region of the integrated circuit, and a passive component formed over a third region of the integrated circuit, between the first region and the second region. The third region comprises an insulating material, which can be glass in some cases. Further, the passive component can be formed over the glass in the third region. The integrated circuit is designed to avoid electromagnetic coupling between the passive component, during operation of the integrated circuit, and interfacial parasitic conductive layers existing in the first and second semiconductor structures, to improve performance.