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    SEMICONDUCTOR DIE ASSEMBLIES WITH ENHANCED THERMAL MANAGEMENT, SEMICONDUCTOR DEVICES INCLUDING SAME AND RELATED METHODS
    1.
    发明申请
    SEMICONDUCTOR DIE ASSEMBLIES WITH ENHANCED THERMAL MANAGEMENT, SEMICONDUCTOR DEVICES INCLUDING SAME AND RELATED METHODS 审中-公开
    具有增强型热管理的半导体管芯组件，包括相同方法的半导体器件

    公开(公告)号：WO2013074484A2

    公开(公告)日：2013-05-23

    申请号：PCT/US2012/064762

    申请日：2012-11-13

    申请人： MICRON TECHNOLOGY, INC. ,  LUO, Shijian ,  LI, Xiao ,  LI, Jian

    发明人： LUO, Shijian ,  LI, Xiao ,  LI, Jian

    CPC分类号： H01L23/36 ,  H01L23/3675 ,  H01L23/3677 ,  H01L23/3736 ,  H01L23/42 ,  H01L25/0657 ,  H01L25/18 ,  H01L25/50 ,  H01L2224/73204 ,  H01L2225/06513 ,  H01L2225/06544 ,  H01L2225/06589 ,  H01L2924/15311

    摘要： A semiconductor die assembly comprises a plurality of semiconductor dice in a stack. Another semiconductor die is adjacent to the stack and has a region, which may comprise a relatively higher power density region, extends peripherally beyond the stack. Conductive elements extend between and electrically interconnect integrated circuits of semiconductor dice in the stack and of the other semiconductor die. Thermal pillars are interposed between semiconductor dice of the stack, and a heat dissipation structure, such as a lid, is in contact with an uppermost die of the stack and the high power density region of the other semiconductor die. Other die assemblies, semiconductor devices and methods of managing heat transfer within a semiconductor die assembly are also disclosed.

    摘要翻译： 半导体管芯组件包括堆叠中的多个半导体管芯。 另一个半导体管芯与堆叠相邻并且具有可以包括相对较高的功率密度区域的区域，其周边地延伸超过堆叠。 导电元件在堆叠中的半导体裸片的集成电路与另一半导体裸片之间延伸并电互连。 热柱插入堆叠的半导体管芯之间，并且诸如盖子的散热结构与堆叠的最上面的管芯和另一个半导体管芯的高功率密度区域接触。 还公开了其他管芯组件，半导体器件和管理半导体管芯组件内的热传递的方法。

    PLASMA MEDIATED ASHING PROCESSES
    2.
    发明申请
    PLASMA MEDIATED ASHING PROCESSES 审中-公开
    等离子体介质吸附过程

    公开(公告)号：WO2012018374A2

    公开(公告)日：2012-02-09

    申请号：PCT/US2011/001324

    申请日：2011-07-27

    申请人： AXCELIS TECHNOLOGIES INC. ,  LUO, Shijian ,  ESCORCIA, Orlando ,  WALDFRIED, Carlo

    发明人： LUO, Shijian ,  ESCORCIA, Orlando ,  WALDFRIED, Carlo

    IPC分类号： G03F7/42

    CPC分类号： G03F7/427 ,  H01J2237/3342

    摘要： Plasma mediated ashing processes for removing organic material from a substrate generally includes exposing the substrate to the plasma to selectively remove photoresist, implanted photoresist, polymers and/or residues from the substrate, wherein the plasma contains a ratio of active nitrogen and active oxygen that is larger than a ratio of active nitrogen and active oxygen obtainable from plasmas of gas mixtures comprising oxygen gas and nitrogen gas. The plasma exhibits high throughput while minimizing and/or preventing substrate oxidation and dopant bleaching. Plasma apparatuses are also described.

    摘要翻译： 用于从衬底去除有机材料的等离子体介质灰化过程通常包括将衬底暴露于等离子体以选择性地从衬底去除光致抗蚀剂，植入的光致抗蚀剂，聚合物和/或残余物，其中等离子体包含活性氮和活性氧的比例， 大于可由包含氧气和氮气的气体混合物的等离子体获得的活性氮和活性氧的比例。 等离子体显示出高通量，同时最小化和/或防止底物氧化和掺杂剂漂白。 还描述了等离子体装置。

    SUBSTANTIALLY NON-OXIDIZING PLASMA TREATMENT DEVICES AND PROCESSES
    3.
    发明申请
    SUBSTANTIALLY NON-OXIDIZING PLASMA TREATMENT DEVICES AND PROCESSES 审中-公开
    主要的非氧化等离子体处理装置和工艺

    公开(公告)号：WO2012148370A1

    公开(公告)日：2012-11-01

    申请号：PCT/US2011/000733

    申请日：2011-04-27

    申请人： AXCELIS TECHNOLOGIES, INC. ,  WALDFRIED, Carlo ,  GEISSBUHLER, Phillip ,  BERRY, Ivan ,  LUO, Shijian ,  HUSEUNOVIC, Armin

    发明人： WALDFRIED, Carlo ,  GEISSBUHLER, Phillip ,  BERRY, Ivan ,  LUO, Shijian ,  HUSEUNOVIC, Armin

    IPC分类号： H01J37/32

    CPC分类号： H01L21/31138 ,  H01J37/32357 ,  H01J37/32477 ,  H01J37/32504 ,  H01J37/32844 ,  H01J37/32935 ,  Y02C20/30 ,  Y02P70/605

    摘要： Non-oxidizing plasma treatment devices for treating a semiconductor workpiece generally include a substantially non-oxidizing gas source; a plasma generating component in fluid communication with the non-oxidizing gas source; a process chamber in fluid communication with the plasma generating component, and an exhaust conduit centrally located in a bottom wall of the process chamber. In one embodiment, the process chamber is formed of an aluminum alloy containing less than 0.15% copper by weight; In other embodiments, the process chamber includes a coating of a non-copper containing material to prevent formation of copper hydride during processing with substantially non-oxidizing plasma. In still other embodiments, the process chamber walls are configured to be heated during plasma processing. Also disclosed are non- oxidizing plasma processes.

    摘要翻译： 用于处理半导体工件的非氧化等离子体处理装置通常包括基本上非氧化气体源; 与非氧化性气体源流体连通的等离子体产生部件; 与等离子体产生部件流体连通的处理室和位于处理室的底壁中心的排气导管。 在一个实施例中，处理室由含有少于0.15重量％铜的铝合金形成; 在其它实施方案中，处理室包括不含铜的材料的涂层，以防止在基本上非氧化等离子体的处理期间形成氢化铜。 在其它实施例中，处理室壁构造成在等离子体处理期间被加热。 还公开了非氧化等离子体工艺。

    AN ELECTRICAL CONDITION MONITORING METHOD FOR POLYMERS
    7.
    发明申请
    AN ELECTRICAL CONDITION MONITORING METHOD FOR POLYMERS 审中-公开
    聚合物的电气条件监测方法

    公开(公告)号：WO2003076953A2

    公开(公告)日：2003-09-18

    申请号：PCT/US2003/006844

    申请日：2003-03-05

    申请人： BPW, INC. ,  WATKINS, Kenneth S. ,  MORRIS, Shelby, J. ,  MASAKOWSKI, Daniel D. ,  WONG, Ching-Ping ,  LUO, Shijian

    发明人： WATKINS, Kenneth S. ,  MORRIS, Shelby, J. ,  MASAKOWSKI, Daniel D. ,  WONG, Ching-Ping ,  LUO, Shijian

    IPC分类号： G01R

    CPC分类号： G01R31/1227 ,  G01N17/00 ,  G01N27/041 ,  G01N33/445

    摘要： An electrical condition monitoring method utilizes measurements of electrical resistivity of an age sensor (303) made of a conductive matrix or composite disposed in a polymeric structure such as an electrical cable (301). The conductive matrix comprises a base polymer and conductive filler. The method comprises a means for communicating the resistivity to a measuring instrument (317) as a means to correlate resistivity of the conductive matrix of the polymeric structure with resistivity of an accelerated-aged conductive composite.

    摘要翻译： 电气状态监测方法利用由诸如电缆（301）的聚合物结构中布置的导电基体或复合材料制成的年龄传感器（303）的电阻率的测量。 导电基质包括基础聚合物和导电填料。 该方法包括用于将电阻率传递到测量仪器（317）的装置，作为将聚合物结构的导电基体的电阻率与加速老化的导电复合材料的电阻率相关联的手段。