公开(公告)号：WO2008085559A2

公开(公告)日：2008-07-17

申请号：PCT/US2007/078511

申请日：2007-09-14

Applicant: NANOCONDUCTION, INC. ,  DANGELO, Carlos ,  OLSON, Darin

Inventor： DANGELO, Carlos ,  OLSON, Darin

IPC: H01L23/34

CPC classification number: H01L23/373 ,  B82Y10/00 ,  H01L2224/16 ,  H01L2224/73253 ,  H01L2924/01019 ,  H01L2924/01057 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/10253 ,  H01L2924/00

Abstract: Heat sink structures employing carbon nanotube or nanowire arrays to reduce the thermal interface resistance between an integrated circuit chip and the heat sink, where the nanotubes are cut to essentially the same length over the surface of the structure, are disclosed. Carbon nanotube arrays are combined with a thermally conductive metal filler disposed between the nanotubes. This structure produces a thermal interface having high axial and lateral thermal conductivities.

Abstract translation: 公开了使用碳纳米管或纳米线阵列的散热器结构，以降低集成电路芯片和散热器之间的热界面电阻，其中纳米管在结构表面上被切割成基本相同的长度。 碳纳米管阵列与布置在纳米管之间的导热金属填料结合。 该结构产生具有高的轴向和横向热导率的热界面。

公开(公告)号：WO2008036571A2

公开(公告)日：2008-03-27

申请号：PCT/US2007/078517

申请日：2007-09-14

Applicant: NANOCONDUCTION, INC. ,  DANGELO, Carlos ,  OLSON, Darin

Inventor： DANGELO, Carlos ,  OLSON, Darin

IPC: H01L23/34

CPC classification number: H01L23/373 ,  B82Y10/00 ,  H01L2224/16 ,  H01L2224/73253 ,  H01L2924/01019 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/10253 ,  H01L2924/00

Abstract: Heat sink structures employing carbon nanotube or nanowire arrays exposed from both opposite surfaces of the structure to reduce the thermal interface resistance between an integrated circuit chip and the heat sink are disclosed. In one embodiment, the nanotubes are cut to essentially the same length over the surface of the structure. Carbon nanotube arrays are combined with a thermally conductive metal filler disposed between the nanotubes. This structure produces a thermal interface with high axial and lateral thermal conductivities.

Abstract translation: 公开了使用从结构的两个相对表面暴露的碳纳米管或纳米线阵列以降低集成电路芯片和散热器之间的热界面电阻的散热结构。 在一个实施例中，在结构的表面上将纳米管切割成基本相同的长度。 碳纳米管阵列与布置在纳米管之间的导热金属填料结合。 该结构产生具有高轴向和横向热导率的热界面。

公开(公告)号：WO2008036568A2

公开(公告)日：2008-03-27

申请号：PCT/US2007/078509

申请日：2007-09-14

Applicant: NANOCONDUCTION, INC. ,  DANGELO, Carlos ,  OLSON, Darin

Inventor： DANGELO, Carlos ,  OLSON, Darin

IPC: H01L23/34

CPC classification number: H01L23/373 ,  B82Y10/00 ,  H01L2224/16 ,  H01L2224/73253 ,  H01L2924/01019 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/10253 ,  Y10S977/742 ,  Y10S977/762 ,  H01L2924/00

Abstract: Heat sink structures employing mutli-layers of carbon nanotube or nanowire arrays to reduce the thermal interface resistance between an integrated circuit chip and the heat sink are disclosed. In one embodiment, the nanotubes are cut to essentially the same length over the surface of the structure. Carbon nanotube arrays are combined with a thermally conductive metal filler disposed between the nanotubes. This structure produces a thermal interface with high axial and lateral thermal conductivities.

Abstract translation: 公开了采用多层碳纳米管或纳米线阵列来减小集成电路芯片和散热器之间的热界面电阻的散热器结构。 在一个实施例中，纳米管在结构的表面上被切割成基本相同的长度。 碳纳米管阵列与布置在纳米管之间的导热金属填料结合。 这种结构产生具有高轴向和侧向导热性的热界面。

公开(公告)号：WO2006130816A3

公开(公告)日：2006-12-07

申请号：PCT/US2006/021421

申请日：2006-05-31

Applicant: NANOCONDUCTION INC. ,  DANGELO, Carlos ,  PADMAKUMAR, Bala

Inventor： DANGELO, Carlos ,  PADMAKUMAR, Bala

IPC: H01L23/42

Abstract: An in-chip system and method for removing heat from integrated circuits is disclosed. One embodiment is a substrate with a front side and a back side. The front side of the substrate is capable of having formed thereon a plurality of transistors. A plurality of structures within the substrate contain a solid heat conductive media comprising carbon nanotubes and/or a metal, such as copper. At least some of the plurality of structures extend from the back side of the substrate into the substrate. In some embodiments, the carbon nanotubes are formed within the substrate using a catalyst.

公开(公告)号：WO2005041256A3

公开(公告)日：2005-05-06

申请号：PCT/US2004/027449

申请日：2004-08-25

Applicant: NANOCONDUCTION, INC. ,  DANGELO, Carlos

Inventor： DANGELO, Carlos

IPC: H01L21/461

Abstract: Heat sink structures employing carbon nanotube or nanowire arrays to reduce the thermal interface resistance between an integrated circuit chip and the heat sink are disclosed. Carbon nanotube arrays are combined with a thermally conductive metal filler disposed between the nanotubes. This structure produces a thermal interface with high axial and lateral thermal conductivities.

公开(公告)号：WO2004068545A2

公开(公告)日：2004-08-12

申请号：PCT/US2004/001787

申请日：2004-01-23

Applicant: NANOCONDUCTION INC. ,  DANGELO, Carlos

Inventor： DANGELO, Carlos

IPC: H01L

CPC classification number: B82Y10/00 ,  H01L21/76838 ,  H01L21/76879 ,  H01L23/3677 ,  H01L23/5226 ,  H01L23/53276 ,  H01L2221/1094 ,  H01L2924/0002 ,  H01L2924/00

Abstract: This invention relates to the conduction of heat within the structure of an integrated circuit. The invention discloses a heat conduction device and a method of fabricating same, that utilizes thermally conductive vias to extract heat from local power generating regions of the substrate to top or bottom surfaces of the integrated circuit die. Conductive vias contain self-assembled carbon nanotubes for the enhancement of heat conduction out of the integrated circuit.

Abstract translation: 本发明涉及集成电路结构内的热传导。 本发明公开了一种导热装置及其制造方法，其利用导热通孔将热量从基板的局部发电区域提取到集成电路管芯的顶表面或底表面。 导电通孔包含用于增强集成电路中的热传导的自组装碳纳米管。

公开(公告)号：WO2007137095A2

公开(公告)日：2007-11-29

申请号：PCT/US2007/069080

申请日：2007-05-16

Applicant: NANOCONDUCTION, INC. ,  DANGELO, Carlos ,  SUHIR, Ephraim ,  DEY, Subrata ,  WACKER, Barbara ,  XU, Yuan ,  BOREN, Arthur ,  OLSEN, Darin ,  ZHANG, Yi ,  SCHWARTZ, Peter ,  PADMAKUMAR, Bala

Inventor： DANGELO, Carlos ,  SUHIR, Ephraim ,  DEY, Subrata ,  WACKER, Barbara ,  XU, Yuan ,  BOREN, Arthur ,  OLSEN, Darin ,  ZHANG, Yi ,  SCHWARTZ, Peter ,  PADMAKUMAR, Bala

IPC: B28B19/00

CPC classification number: H01L23/373 ,  B82Y10/00 ,  B82Y30/00 ,  C23C16/0281 ,  C23C16/26 ,  C23C28/00 ,  C23C28/322 ,  C23C28/34 ,  C23C28/345 ,  H01L24/29 ,  H01L24/32 ,  H01L33/641 ,  H01L2224/29193 ,  H01L2224/32245 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01057 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/04953 ,  H01L2924/12041 ,  H01L2924/14 ,  H01L2924/15747 ,  H01L2924/19043 ,  H01L2924/351 ,  H01L2924/00

Abstract: One aspect of the invention includes a copper substrate; a catalyst on top of the copper substrate surface; and a thermal interface material that comprises a layer containing carbon nanotubes that contacts the catalyst. The carbon nanotubes are oriented substantially perpendicular to the surface of the copper substrate. A Raman spectrum of the layer containing carbon nanotubes has a D peak at ∼1350 cm -1 with an intensity I D , a G peak at ∼1585 cm -1 with an intensity I G , and an intensity ratio I D / I G of less than 0.7 at a laser excitation wavelength of 514 nm. The thermal interface material has: a bulk thermal resistance, a contact resistance at an interface between the thermal interface material and the copper substrate, and a contact resistance at an interface between the thermal interface material and a solid-state device. A summation of these resistances has a value of 0.06 cm 2 K/W or less.

Abstract translation: 本发明的一个方面包括铜基板; 在铜基材表面上的催化剂; 以及包含与催化剂接触的含有碳纳米管的层的热界面材料。 碳纳米管的取向基本上垂直于铜基底的表面。 含有碳纳米管的层的拉曼光谱在〜1350cm -1处具有强度I D D的D峰，在1585cm -1处的G峰， 在激光激发波长处具有小于0.7的强度I＆gt; G的强度比I＆gt;小于0.7的强度比 为514nm。 热界面材料具有体热阻，热界面材料和铜基底之间的界面处的接触电阻以及热界面材料和固态器件之间的界面处的接触电阻。 这些电阻的总和的值为0.06cm 2 / K以上。

公开(公告)号：WO2007053649A2

公开(公告)日：2007-05-10

申请号：PCT/US2006/042562

申请日：2006-10-31

Applicant: NANOCONDUCTION, INC. ,  XU, Kevin ,  SUHIR, Ephraim ,  DANGELO, Carlos

Inventor： XU, Kevin ,  SUHIR, Ephraim ,  DANGELO, Carlos

IPC: H05K7/20

CPC classification number: H01L23/433 ,  H01L23/4006 ,  H01L2924/0002 ,  H01L2924/00

Abstract: To achieve optimal thermal contact between opposing surfaces, it is necessary to align such surfaces so that maximum contact is achieved. In a semiconductor package, it is necessary to align the surface of a semiconductor integrated circuit (IC) and a heat sink surface, where the heat sink contains a nano-composite wire structure. By using a self-aligned structure that forces the alignment of the IC surface and the heat sink, maximum thermal contact between the two surfaces is achieved. The self-alignment of a pressure measurement device for same is also disclosed.

Abstract translation: 为了实现相对表面之间的最佳热接触，需要对准这些表面以便实现最大的接触。 在半导体封装中，必须对准半导体集成电路（IC）的表面和散热器表面，其中散热器包含纳米复合导线结构。 通过使用强制IC表面和散热器对准的自对准结构，实现两个表面之间的最大热接触。 还公开了用于其的压力测量装置的自对准。

公开(公告)号：WO2008060644A2

公开(公告)日：2008-05-22

申请号：PCT/US2007/064541

申请日：2007-03-21

Applicant: NANOCONDUCTION, INC.

Inventor： DANGELO, Carlos

IPC: F28D15/00 ,  F28F13/06

CPC classification number: H01L23/473 ,  B82Y10/00 ,  H01L23/467 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method and apparatus for overcoming the problems of rapidly increasing complexity and cost and degrading reliability measures in connection with the cooling of a multi-chip mounted on an electronic printed circuit board. Accordingly, there are combined a) nano-structures materials for micro or nano-scale heat transfer from a substrate; b) small dimension heat sinks or heat spreaders matched to the mico-scale heat transfer to control the spread resistance; c) nano-scale cooling channel surfaces or micro-channel heat exchangers to improve heat transfer coefficients of the hot components to the cooling agent, air or liquid; and d) sharing of the active device such as a fan, pump, compressor, etc., that are responsible for moving the cooling agent in an active cooling embodiment. By providing appropriate passage for the cooling agent an effective and efficient cooling of the hot surfaces is achieved.

Abstract translation: 一种用于克服安装在电子印刷电路板上的多芯片的冷却的复杂性和成本快速增加以及降低可靠性措施的问题的方法和装置。 因此，组合了a）纳米结构材料用于从基底进行微量或纳米尺度的热传递; b）小尺寸散热器或散热器与微尺度传热匹配，以控制传播阻力; c）纳米级冷却通道表面或微通道热交换器，以改善热组分对冷却剂，空气或液体的传热系数; 以及d）在主动冷却实施例中共享负责将冷却剂移动的主动装置，例如风扇，泵，压缩机等。 通过为冷却剂提供适当的通道，实现了热表面的有效和有效的冷却。