公开(公告)号：WO2010060998A3

公开(公告)日：2010-09-30

申请号：PCT/EP2009066005

申请日：2009-11-27

Applicant: PBC LASERS GMBH ,  SHCHUKIN VITALY ,  LEDENTSOV NIKOLAI

Inventor： SHCHUKIN VITALY ,  LEDENTSOV NIKOLAI

IPC: H01S5/10 ,  H01S5/02 ,  H01S5/14 ,  H01S5/20 ,  H01S5/22

CPC classification number: H01S5/1021 ,  H01S5/0265 ,  H01S5/028 ,  H01S5/1017 ,  H01S5/1032 ,  H01S5/1082 ,  H01S5/14 ,  H01S5/16 ,  H01S5/2004 ,  H01S5/2027 ,  H01S5/2036 ,  H01S5/22 ,  H01S5/3213 ,  H01S2301/08

Abstract: A method for improving the functionality of a semiconductor diode laser having an extended vertical waveguide, wherein the active medium is located closer to the top cladding layer of the waveguide. The vertical optical modes of the laser include at least one vertical optical mode extended over the entire extended vertical waveguide and at least one vertical optical mode localized at the active medium. The goal of using a laser with an extended vertical waveguide is to obtain lasing in narrow beams with high brightness and/or wavelength stabilized lasing. In both cases lasing in a localized mode is highly undesirable due to the resulting reduced brightness of the device and disadvantages related to the catastrophic optical damage of the mirrors of the facet for the localized mode and needs to be suppressed. Several methods of configuring the tilted wave laser in the longitudinal direction are disclosed. In one embodiment the resonator length (in the longitudinal direction) is specifically selected to be equal to the length of the return path of the tilted wave multiplied by a rational number such that the tilted wave in the extended vertical waveguide forms a closed loop. In this embodiment, the lasing from the narrow waveguide, in which the active medium is located, is suppressed.

Abstract translation: 一种用于改善具有扩展垂直波导的半导体二极管激光器的功能的方法，其中有源介质位于更靠近波导的顶部包层的位置。 激光器的垂直光学模式包括在整个扩展垂直波导上延伸的至少一个垂直光学模式和位于活动介质的至少一个垂直光学模式。 使用具有扩展垂直波导的激光器的目标是在具有高亮度和/或波长稳定的激光的窄光束中获得激光。 在两种情况下，由于器件的亮度降低和与局部模式的面的反射镜的灾难性光学损伤有关的缺点，并且需要被抑制，因此局部模式的激光是非常不期望的。 公开了在纵向上配置倾斜波激光器的几种方法。 在一个实施例中，谐振器长度（沿纵向方向）被特别选择为等于倾斜波的返回路径的长度乘以有理数，使得延伸的垂直波导中的倾斜波形成闭环。 在本实施例中，抑制了活性介质所在的窄波导的激光。

公开(公告)号：WO2010023094A3

公开(公告)日：2010-09-16

申请号：PCT/EP2009060350

申请日：2009-08-10

Applicant: PBC LASERS GMBH ,  SHCHUKIN VITALY ,  LEDENTSOV NIKOLAI

Inventor： SHCHUKIN VITALY ,  LEDENTSOV NIKOLAI

IPC: H01S5/10 ,  H01S5/40

CPC classification number: H01S5/10 ,  H01S5/0265 ,  H01S5/028 ,  H01S5/0604 ,  H01S5/0605 ,  H01S5/1021 ,  H01S5/1032 ,  H01S5/105 ,  H01S5/14 ,  H01S5/2036 ,  H01S5/32341 ,  H01S5/4031 ,  H01S5/4081 ,  H01S2301/18

Abstract: A semiconductor diode laser having a broad vertical waveguide and a broad lateral waveguide is disclosed emitting laser light in a single vertical mode and a single lateral mode narrow beam. The vertical waveguide comprises a coupled cavity structure, wherein light, generated in the active medium placed in the first cavity leaks into the second cavity and returns back. Phase matching conditions govern the selection of a single vertical mode. A multi-stripe lateral waveguide comprises preferably a lateral photonic band crystal with a lateral optical defect created by selected pumping of multistripes. This approach allows the selection of a single lateral mode having a higher optical confinement factor and/or a lower absorption loss and/or a lower leakage loss compared to the rest lateral optical modes. This enables a single lateral mode lasing from a broad area field coupled laser array. A laser system comprised of multiple field coupled laser arrays on a single wafer and a set of external mirrors enables an ultra-broad field coupled laser bar emitting a coherent laser light in a single vertical optical mode and a single lateral optical mode. A laser system comprised of multiple ultra-broad field coupled laser bars on different wafers and a set of external mirrors enables an ultra-broad field coupled laser stack emitting coherent laser light in a single vertical optical mode and a single lateral optical mode. This allows realization of ultrahigh power ultrahigh brightness laser systems based on semiconductor diode lasers.

Abstract translation: 公开了一种具有宽垂直波导和宽横向波导的半导体二极管激光器，其以单个垂直模式和单个横向模式窄波束发射激光。 垂直波导包括耦合腔结构，其中放置在第一腔中的活性介质中产生的光泄漏到第二腔中并返回。 相位匹配条件控制单个垂直模式的选择。 多条横向波导优选包括横向光子带晶体，其具有通过多条纹的选定泵浦而产生的横向光学缺陷。 与其余的横向光学模式相比，该方法允许选择具有更高的光学约束因子和/或更低的吸收损失和/或更低的泄漏损失的单个横向模式。 这使得能够从大面积场耦合激光器阵列进行单个横向模式激射。 由单个晶片上的多个场耦合激光器阵列和一组外部反射镜组成的激光器系统使得能够以单个垂直光学模式和单个横向光学模式发射相干激光的超宽场耦合激光器条。 由不同晶圆上的多个超宽场耦合激光条和一组外部反射镜组成的激光系统使得能够在单个垂直光学模式和单个横向光学模式下发射相干激光的超宽场耦合激光堆栈。 这允许实现基于半导体二极管激光器的超高功率超高亮度激光系统。

公开(公告)号：WO2009143462A2

公开(公告)日：2009-11-26

申请号：PCT/US2009045041

申请日：2009-05-22

Applicant: VI SYSTEMS GMBH ,  LOTT JAMES ,  LEDENTSOV NIKOLAI ,  SHCHUKIN VITALY

Inventor： LOTT JAMES ,  LEDENTSOV NIKOLAI ,  SHCHUKIN VITALY

IPC: H01S5/026 ,  H01L21/60

CPC classification number: H01L33/60 ,  G02B6/4214 ,  G02B6/43 ,  H01L21/6835 ,  H01L24/19 ,  H01L24/82 ,  H01L24/95 ,  H01L25/16 ,  H01L27/1446 ,  H01L31/028 ,  H01L33/48 ,  H01L2224/04105 ,  H01L2224/24226 ,  H01L2224/24227 ,  H01L2224/73267 ,  H01L2224/92244 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/15153 ,  H01S5/0217 ,  H01S5/02248 ,  H01S5/02276 ,  H01S5/18302 ,  H01S5/18305 ,  H01S5/18311 ,  H01S5/18394 ,  H01S5/423 ,  H01S2301/176 ,  H01L2924/00

Abstract: A method for the hybrid integration of vertical cavity surface emitting lasers (VCSELs) and/or other optical device components with silicon-based integrated circuits, based on a series of attachment steps, is described. The method is applicable when a multitude of individual VCSELs or optical devices are processed on the surface of a compound semiconductor wafer and then transferred to a silicon-based integrated circuit. The technique is realized by employing a specific sacrificial or removable separation layer between the optical components and the mother semiconductor substrate, followed by the transfer of the optical components to a carrier substrate, and the subsequent elimination of the sacrificial or separation layer and simultaneous removal of the mother substrate. This procedure is followed by the attachment and interconnection of the optical components to the surface of, or embedded within the upper layers of, an integrated circuit, followed by the release of the components from the carrier substrate. The distinction of this method is the ability to place and interconnect VCSELs directly within the physical structure of the integrated circuit, thus greatly reducing the power requirements, the distance of interconnecting lines, and the resultant operational speed. Selected variations of the method are proposed including the selective placement of groups of physically-connected VCSELs, and the collection and placement of large numbers of fabricated VCSELs onto foreign substrates using a vacuum plating tool.

Abstract translation: 描述了基于一系列附接步骤的垂直腔表面发射激光器（VCSEL）和/或其他光学器件部件与基于硅的集成电路的混合集成的方法。 当多个单独的VCSEL或光学器件在化合物半导体晶片的表面上被处理然后转移到硅基集成电路时，该方法是可应用的。 该技术通过在光学部件和母体半导体衬底之间采用特定的牺牲或可移除的分离层，随后将光学部件转移到载体衬底，随后消除牺牲层或分离层并同时去除 母基板。 该过程之后是将光学部件附接到其集成电路的表面或嵌入集成电路的上层中，随后从载体基板释放部件。 该方法的区别在于可以直接在VCS集成电路的物理结构内放置和连接VCSEL，从而大大降低了功率需求，互连线的距离以及最终的工作速度。 提出了该方法的选择的变型，包括物理连接的VCSEL的组的选择性放置，以及使用真空电镀工具将大量制造的VCSEL收集和放置到异质衬底上。

公开(公告)号：WO2004081610A2

公开(公告)日：2004-09-23

申请号：PCT/IL2004000242

申请日：2004-03-14

Applicant: PBC LASERS LTD ,  LEDENTSOV NIKOLAI ,  SHCHUKIN VITALY

Inventor： LEDENTSOV NIKOLAI ,  SHCHUKIN VITALY

IPC: H01S5/028 ,  H01S5/183 ,  G02B

CPC classification number: G02B5/26 ,  G02B5/285 ,  H01S5/028 ,  H01S5/0281 ,  H01S5/0285 ,  H01S5/0425 ,  H01S5/0655 ,  H01S5/105 ,  H01S5/1833 ,  H01S5/18341 ,  H01S5/18358 ,  H01S5/18369 ,  H01S5/18377 ,  H01S5/2027 ,  H01S5/32341

Abstract: A selective reflector, for selectively preventing reflection of light passing therethrough. The selective reflector comprising at least one layer characterized by an angle-dependent reflectivity function. The angle-dependent reflectivity function being decreasing upon at least one interval of increasing impinging angle of the light on a surface of the at least one layer, such that when said impinging angle is within a predetermined range, the reflection of light is substantially prevented.

Abstract translation: 选择性反射器，用于选择性地防止穿过其中的光的反射。 该选择反射器包括至少一层，其特征在于角度反射率函数。 所述角度反射率函数在所述至少一层的表面上的光的增加的角度的至少一个间隔的范围内减小，使得当所述入射角在预定范围内时，基本上防止了光的反射。

公开(公告)号：WO2008029283A3

公开(公告)日：2008-12-18

申请号：PCT/IB2007003510

申请日：2007-06-06

Applicant: LEDENTSOV NIKOLAI ,  SHCHUKIN VITALY

Inventor： LEDENTSOV NIKOLAI ,  SHCHUKIN VITALY

IPC: H01S5/183 ,  H01L31/00 ,  H01L33/00 ,  H01L33/10 ,  H01S5/00 ,  H01S5/026 ,  H01S5/028 ,  H01S5/042 ,  H01S5/062 ,  H01S5/12 ,  H01S5/20

CPC classification number: H01S5/1833 ,  H01L31/02327 ,  H01L31/1035 ,  H01L33/0045 ,  H01L33/105 ,  H01S5/0014 ,  H01S5/0264 ,  H01S5/0265 ,  H01S5/0285 ,  H01S5/0425 ,  H01S5/062 ,  H01S5/1218 ,  H01S5/1221 ,  H01S5/18302 ,  H01S5/18311 ,  H01S5/18313 ,  H01S5/18316 ,  H01S5/18341 ,  H01S5/2004 ,  H01S5/2027 ,  H01S5/205

Abstract: A vertically integrated optoelectronic device allows high- speed data transfer by direct or indirect modulation of the intensity of the emitted light. The device comprises at least one multilayer interference reflector and at least one cavity. In one embodiment the reflector operates as a modulator element controlled by an applied voltage. The stopband edge of the reflector is electrooptically tuned using the quantum confined Stark effect in the vicinity of the cavity mode, resulting in a modulated transmittance of the reflector and, thus, in indirect modulation of light intensity. In another embodiment, the optical field profile in the cavity is affected by the shift of the stopband wavelength, and the device operates as a wavelength- tunable light emitter. In yet another embodiment, two or more refractive index periodicities are integrated in the reflector, suppressing parasitic optical modes and enabling a high-speed direct modulation of the intensity of light emitted by the device.

Abstract translation: 垂直集成的光电子器件允许通过直接或间接调制发射光的强度进行高速数据传输。 该装置包括至少一个多层干涉反射器和至少一个空腔。 在一个实施例中，反射器作为由施加电压控制的调制器元件工作。 反射器的阻带边缘在腔模式附近使用量子限制的斯塔克效应进行电光调谐，导致反射器的调制透射率，因此间接调制光强度。 在另一个实施例中，空腔中的光场分布受到阻带波长的偏移的影响，并且器件作为波长可调光发射器工作。 在另一个实施例中，两个或更多个折射率周期性集成在反射器中，抑制寄生光学模式并使得能够高速直接调制由器件发射的光的强度。

公开(公告)号：WO2008041138A2

公开(公告)日：2008-04-10

申请号：PCT/IB2007004283

申请日：2007-06-06

Applicant: SHCHUKIN VITALY ,  LEDENTSOV NIKOLAI

Inventor： SHCHUKIN VITALY ,  LEDENTSOV NIKOLAI

IPC: H01S5/183 ,  H01L33/10 ,  H01S5/14

CPC classification number: H01S5/14 ,  H01L33/105 ,  H01S3/109 ,  H01S5/028 ,  H01S5/1021 ,  H01S5/1032 ,  H01S5/1035 ,  H01S5/1085 ,  H01S5/1092 ,  H01S5/125 ,  H01S5/183 ,  H01S5/2027 ,  H01S2301/18

Abstract: A light emitting device emits light from the surface in a broad spectral range and a broad range of angles tilted with respect to the direction normal to the exit surface. An apparatus for generating wavelength-stabilized light is formed of a light-emitting device, an external cavity and at least one external mirror. Light emitted by the light-emitting device at a certain preselected angle, propagates through the external cavity, impinges on the external mirror and is reflected back. Reflected light undergoes interference with the emitted light. The interference can be constructive or destructive. Constructive interference results in a positive feedback. The positive feedback conditions are met at one or a few selected wavelengths within the luminescence spectrum of the active region. Then the apparatus generates wavelength- stabilized light. An apparatus may operate as a wavelength- stabilized light-emitting diode, a wavelength- stabilized superluminescent light-emitting diode, or a wavelength-stabilized laser, or an apparatus for frequency conversion.

Abstract translation: 发光器件在宽的光谱范围和相对于垂直于出射表面的方向倾斜的宽范围的角度上从表面发射光。 用于产生波长稳定的光的装置由发光装置，外部空腔和至少一个外部反射镜形成。 由发光器件以一定的预选角度发射的光通过外部空腔传播，撞击在外部反射镜上并被反射回来。 反射光受到发射光的干扰。 干扰可能是建设性的或破坏性的。 建设性干扰导致积极的反馈。 在有效区域的发光光谱内的一个或几个选定波长处满足正反馈条件。 然后，该装置产生波长稳定的光。 设备可以作为波长稳定的发光二极管，波长稳定的超发光发光二极管或波长稳定的激光器或用于频率转换的装置来操作。

公开(公告)号：WO2004075362A3

公开(公告)日：2005-09-01

申请号：PCT/IL2004000148

申请日：2004-02-18

Applicant: PBC LASERS LTD ,  LEDENTSOV NIKOLAI ,  SHCHUKIN VITALY

Inventor： LEDENTSOV NIKOLAI ,  SHCHUKIN VITALY

IPC: H01S20060101 ,  H01S1/00 ,  H01S3/082 ,  H01S3/10 ,  H01S5/04 ,  H01S5/06 ,  H01S5/183

CPC classification number: H01S5/141 ,  B82Y10/00 ,  B82Y20/00 ,  H01S3/109 ,  H01S5/041 ,  H01S5/1085 ,  H01S5/2027

Abstract: Apparatus (Figure 3, Character 10) for frequency conversion of light, the apparatus comprises: a light-emitting device (Figure 3, Character 201) for emitting a light having a first frequency, the light-emitting device (Figure 3, Character 201) being an edge-emitting semiconductor light-emitting diode having an extended waveguide (Figure 3, Character 204) selected such that a fundamental transverse mode of the extended waveguide (Figure 3, Character 204) is characterized by a low beam divergence. The apparatus (Figure 3, Character 10) further comprises a light-reflector (Figure 3, Character 214), constructed and designed so that the light passes a plurality of times through an external cavity (Figure 3, Character 212), defined between the light-emitting device and the light-reflector, and provides a feedback for generating a laser light having the first frequency. The apparatus (Figure 3, Character 10) further comprises a non-linear optical crystal (Figure 3, Character 213), positioned in the external cavity (Figure 3, Character 212) and selected so that when the laser light having the first frequency passes a plurality of times through the non-linear optical crystal (Figure 3, Character 213), the first frequency is converted to a second frequency being different from the first frequency.

Abstract translation: 用于光的频率转换的装置（图3，字符10），该装置包括：用于发射具有第一频率的光的发光装置（图3，字符201），发光装置（图3，字符201 ）是具有选择扩展波导（图3，字符204）的边缘发射半导体发光二极管，使得扩展波导的基本横向模式（图3，字符204）的特征在于较低的光束发散。 该装置（图3，字符10）还包括光反射器（图3，字符214），其构造和设计成使得光通过多次通过外部空腔（图3，字符212） 发光装置和光反射器，并且提供用于产生具有第一频率的激光的反馈。 该装置（图3，字符10）还包括定位在外腔（图3，字符212）中的非线性光学晶体（图3，字符213），并被选择，使得当具有第一频率的激光通过时 多次通过非线性光学晶体（图3，字符213），将第一频率转换为与第一频率不同的第二频率。