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    BONDED DIE ASSEMBLY CONTAINING A MANGANESE-CONTAINING OXIDE BONDING LAYER AND METHODS FOR MAKING THE SAME
    1.
    发明申请
    BONDED DIE ASSEMBLY CONTAINING A MANGANESE-CONTAINING OXIDE BONDING LAYER AND METHODS FOR MAKING THE SAME 审中-公开

    公开(公告)号：WO2020251626A1

    公开(公告)日：2020-12-17

    申请号：PCT/US2019/068868

    申请日：2019-12-30

    Applicant: SANDISK TECHNOLOGIES LLC

    Inventor： WU, Chen ,  RABKIN, Peter ,  HIGASHITANI, Masaaki

    IPC: H01L23/538 ,  H01L23/522 ,  H01L25/065 ,  H01L21/822 ,  H01L21/8229

    Abstract: A method of forming a bonded assembly includes providing a first semiconductor die containing a first substrate, first semiconductor devices, first dielectric material layers overlying the first semiconductor devices, and first metal interconnect structures, providing a second semiconductor die containing a second substrate, second semiconductor devices, second dielectric material layers overlying the second semiconductor devices, and second metal interconnect structures, depositing a manganese layer on a top surface of the first dielectric material layers, disposing the second semiconductor die on the manganese layer such that a surface of the second dielectric material layers contacts the manganese layer, and performing a bonding anneal to bond the first semiconductor die to the second semiconductor die and to convert the manganese layer into a manganese-containing oxide layer, such that the manganese-containing oxide layer is bonded to the first dielectric material layers and the second dielectric material layers.

    BONDED ASSEMBLY CONTAINING A DIELECTRIC BONDING PATTERN DEFINITION LAYER AND METHODS OF FORMING THE SAME
    4.
    发明申请
    BONDED ASSEMBLY CONTAINING A DIELECTRIC BONDING PATTERN DEFINITION LAYER AND METHODS OF FORMING THE SAME 审中-公开

    公开(公告)号：WO2021096552A1

    公开(公告)日：2021-05-20

    申请号：PCT/US2020/023163

    申请日：2020-03-17

    Applicant: SANDISK TECHNOLOGIES LLC

    Inventor： WU, Chen ,  RABKIN, Peter ,  CHEN, Yangyin ,  HIGASHITANI, Masaaki

    IPC: H01L23/50 ,  H01L23/00

    Abstract: A bonded assembly and a method of forming a bonded assembly includes providing a first semiconductor die including a first substrate, first semiconductor devices, and first bonding pads that are electrically connected to a respective node of the first semiconductor devices, providing a second semiconductor die including a second substrate, second semiconductor devices, and second bonding pads that are electrically connected to a respective node of the second semiconductor devices, forming a dielectric bonding pattern definition layer including bonding pattern definition openings therethrough over the second bonding pads, and bonding the second bonding pads to the first bonding pads, where the first metal pads expand through the bonding pattern definition openings and are bonded to a respective one of the second bonding pads.

    SEMICONDUCTOR DIE CONTAINING SILICON NITRIDE STRESS COMPENSATING REGIONS AND METHOD FOR MAKING THE SAME
    5.
    发明申请
    SEMICONDUCTOR DIE CONTAINING SILICON NITRIDE STRESS COMPENSATING REGIONS AND METHOD FOR MAKING THE SAME 审中-公开

    公开(公告)号：WO2021177990A1

    公开(公告)日：2021-09-10

    申请号：PCT/US2020/037619

    申请日：2020-06-12

    Applicant: SANDISK TECHNOLOGIES LLC

    Inventor： WU, Chen ,  RABKIN, Peter ,  CHEN, Yangyin ,  HIGASHITANI, Masaaki

    IPC: H01L21/768 ,  H01L21/02 ,  H01L23/495 ,  B23K26/36 ,  H01L27/11582 ,  H01L27/11556

    Abstract: A method of forming a semiconductor structure includes forming first semiconductor devices over a first substrate, forming a first dielectric material layer over the first semiconductor devices, forming vertical recesses in the first dielectric material layer, such that each of the vertical recesses vertically extends from a topmost surface of the first dielectric material layer toward the first substrate, forming silicon nitride material portions in each of the vertical recesses; and locally irradiating a second subset of the silicon nitride material portions with a laser beam. A first subset of the silicon nitride material portions that is not irradiated with the laser beam includes first silicon nitride material portions that apply tensile stress to respective surrounding material portions, and the second subset of the silicon nitride material portions that is irradiated with the laser beam includes second silicon nitride material portions that apply compressive stress to respective surrounding material portions.

    BONDED ASSEMBLY CONTAINING HORIZONTAL AND VERTICAL BONDING INTERFACES AND METHODS OF FORMING THE SAME
    6.
    发明申请
    BONDED ASSEMBLY CONTAINING HORIZONTAL AND VERTICAL BONDING INTERFACES AND METHODS OF FORMING THE SAME 审中-公开

    公开(公告)号：WO2021107971A1

    公开(公告)日：2021-06-03

    申请号：PCT/US2020/023493

    申请日：2020-03-19

    Applicant: SANDISK TECHNOLOGIES LLC

    Inventor： WU, Chen ,  RABKIN, Peter ,  HIGASHITANI, Masaaki

    IPC: H01L25/065 ,  H01L23/31 ,  H01L23/00 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/1157 ,  H01L27/11582

    Abstract: A first semiconductor die includes first bonding pads. The first bonding pads include proximal bonding pads embedded within a first bonding dielectric layer and distal bonding pads having at least part of the sidewall that overlies the first bonding dielectric layer. A second semiconductor die includes second bonding pads. The second bonding pads are bonded to the proximal bonding pads and the distal bonding pads. The proximal bonding pads are bonded to a respective one of a first subset of the second bonding pads at a respective horizontal bonding interface and the distal bonding pads are bonded to a respective one of a second subset of the second bonding pads at a respective vertical bonding interface at the same time. Dielectric isolation structures may vertically extend through the second bonding dielectric layer of the second semiconductor die and contact the first bonding dielectric layer.

    BONDED DIE ASSEMBLY CONTAINING PARTIALLY FILLED THROUGH-SUBSTRATE VIA STRUCTURES AND METHODS FOR MAKING THE SAME
    8.
    发明申请
    BONDED DIE ASSEMBLY CONTAINING PARTIALLY FILLED THROUGH-SUBSTRATE VIA STRUCTURES AND METHODS FOR MAKING THE SAME 审中-公开

    公开(公告)号：WO2021015827A1

    公开(公告)日：2021-01-28

    申请号：PCT/US2020/024138

    申请日：2020-03-23

    Applicant: SANDISK TECHNOLOGIES LLC

    Inventor： WU, Chen ,  RABKIN, Peter ,  CHEN, Yangyin ,  HIGASHITANI, Masaaki

    IPC: H01L25/065 ,  H01L23/31 ,  H01L23/48 ,  H01L23/00 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/1157 ,  H01L27/11582

    Abstract: A bonded assembly includes a first semiconductor die including a first substrate, first semiconductor devices located on the first substrate, first dielectric material layers located on the first semiconductor devices and embedding first metal interconnect structures, and first through-substrate via structures extending through the first substrate and contacting a respective first metal interconnect structure. Each of the first through-substrate via structures laterally surrounds a respective core cavity that contains a void or a dielectric fill material portion. The bonded assembly includes a second semiconductor die attached to the first semiconductor die, and including a second substrate, second semiconductor devices located on the second substrate, second dielectric material layers located on the second semiconductor devices and embedding second metal interconnect structures, and bonding pad structures electrically connected to a respective one of the second metal interconnect structures and bonded to a respective first through-substrate via structure.

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