公开(公告)号：WO2007032546A8

公开(公告)日：2008-04-03

申请号：PCT/JP2006318658

申请日：2006-09-14

Applicant: SHOWA DENKO KK ,  OSAWA HIROSHI ,  HODOTA TAKASHI

Inventor： OSAWA HIROSHI ,  HODOTA TAKASHI

IPC: H01L33/00

CPC classification number: H01L33/0079 ,  H01L33/007

Abstract: The present invention provides a production method for a nitride semiconductor light emitting device, which warps less after removing the substrate, and which can emit light from the side thereof; specifically, the present invention provides a production method for a nitride semiconductor light emitting device comprising: forming stacked layers by stacking at least an n-type semiconductor layer, a light emitting layer, and a p-type semiconductor layer on a substrate in this order; forming grooves which divide the stacked layers so as to correspond to nitride semiconductor light emitting devices to be produced; filling the grooves with a sacrifice layer; and forming a plate layer on the p-type semiconductor layer and the sacrifice layer by plating.

Abstract translation: 本发明提供了一种氮化物半导体发光器件的制造方法，其在去除衬底之后变得较小，从侧面发光; 具体而言，本发明提供了一种氮化物半导体发光器件的制造方法，其特征在于，具有以下顺序，在基板上依次层叠至少n型半导体层，发光层和p型半导体层来形成堆叠层 ; 形成凹槽，其分隔堆叠的层以对应于待生产的氮化物半导体发光器件; 用牺牲层填充凹槽; 以及通过电镀在p型半导体层和牺牲层上形成平板层。

公开(公告)号：WO2007094516A8

公开(公告)日：2008-10-23

申请号：PCT/JP2007053331

申请日：2007-02-16

Applicant: SHOWA DENKO KK ,  OSAWA HIROSHI ,  HODOTA TAKASHI

Inventor： OSAWA HIROSHI ,  HODOTA TAKASHI

IPC: H01L33/00 ,  H01L33/06 ,  H01L33/16 ,  H01L33/32 ,  H01L33/34 ,  H01L33/56 ,  H01L33/62

CPC classification number: H01L24/32 ,  H01L33/0079 ,  H01L33/16 ,  H01L33/20 ,  H01L33/32 ,  H01L2224/29111 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01042 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/0106 ,  H01L2924/01072 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01076 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01084 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/10329 ,  H01L2924/12041 ,  H01L2924/351 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2924/00015

Abstract: A GaN-based semiconductor light-emitting device 1 includes a stacked body 1OA having the component layers 12 that include an n-type semiconductor layer, a light- emitting layer and a p-type semiconductor layer each formed of a GaN-based semiconductor, sequentially stacked and provided as an uppermost layer with a first bonding layer 14 made of metal and a second bonding layer 33 formed on an electroconductive substrate 31, adapted to have bonded to the first bonding layer 14 the surface thereof lying opposite the side on which the electroconductive substrate 31 is formed, made of a metal of the same crystal structure as the first bonding layer 14, and allowed to exhibit an identical crystal orientation in the perpendicular direction of the bonding surface and the in-plane direction of the bonding surface.

Abstract translation: GaN基半导体发光器件1包括层叠体10A，其具有包括由GaN基半导体形成的n型半导体层，发光层和p型半导体层的构成层12， 依次层叠并设置为具有由金属制成的第一接合层14和形成在导电基板31上的第二接合层33作为最上层，其适于与第一接合层14接合，其表面与 形成由与第一接合层14相同的晶体结构的金属制成的导电性基板31，并且在接合面的垂直方向和接合面的面内方向呈现相同的晶体取向。