Abstract:
An electronic device is constructed with a passivation layer on a metal oxide surface of the device. The metal oxide can be on an electrode as a hole transport layer (HTL), hole injection layer (HIL), electron transport layer (ETL), or electron injection layer (EIL). The passivation layer is a polymer or oligomer comprising carboxylate groups that can be deposited on the metal oxide surface distal to the electrode from solution and optionally oxidized. The oxidation can be carried out by treatment of the deposited polymer with ultraviolet radiation in the presence of ozone.
Abstract:
Embodiments of the invention are directed to Ge comprising heterocyclic compounds which can be used for the preparation of homopolymers and copolymers. The copolymers can be donor-acceptor ( DA) alternating copolymers where the donor unit is a Ge comprising heterocyclic unit. The polymers can be used as materials in solar cells and other photovoltaic devices, transistors, diodes, light emitting devices (LEDs), conductors, supercapacitors, batteries, and electrochromic devices.
Abstract:
An IR-to-Visible up-conversion device with a stacked layer structure includes an IR pass visible blocking layer such that the IR entry face of the stacked device allows IR radiation, particularly MR radiation, to enter the device but visible light generated by a light emitting diode (LED) layer to be blocked from exit at that IR entry face of the device. The device has an IR transparent electrode at the IR entry face and a visible light transparent electrode such that the visible light can exit the device at a visible light detection face opposite the IR entry face.
Abstract:
A solar-powered lighting module is provided, including a solar cell for generating electricity when exposed to light, a battery for storing charge from the generated electricity, and a light generating device powered by the stored charge. In an embodiment, the module further includes a controller that regulates the current transmitted between the components of the module. In a further embodiment, the module is incorporated into an interface to an environmentally controlled space and can be positioned to light an interior portion of the space. In another embodiment, the solar cell and light generating device are transparent to allow light to pass through the interface. In a further embodiment, tinted-color conjugated polymers incorporated into the module limit the spectrum of light that can pass through the interface. In yet another embodiment, a method of modifying an existing interface with such a module is provided.
Abstract:
Embodiments of the invention are directed to a layered organic light emitting diode (OLED) device comprising a buckled structure that provides an improved light output relative to flat OLED devices. The buckled structure has a fine buckling with a quasi- periodicity of 100 to 700 nm and a gross buckling of 10 to 20 μm. Embodiments of the invention are directed to a method of producing the OLED device comprising a buckled structure, where a transparent substrate is coated with a transparent elastomeric layer, upon which a thin metal layer of 20 to 100 nm is deposited at an elevated temperature. Upon cooling to ambient temperature, the metal layer buckles with the formation of a fine buckling with a quasi-periodicity of 100 to 700 nm and a gross buckling of 10 to 20 μm. The metal layer is oxidized to a transparent metal oxide layer with the retention of the buckling. Subsequent steps comprising deposition of at least an anode layer, an electroluminescence layer, and a cathode layer forms an OLED that has a buckling structure resulting from the buckled metal structure formed upon cooling.
Abstract:
Embodiments of the invention are directed to IR photodctectors with gain resulting from the positioning of a charge multiplication layer (CML) between the cathode and the IR sensitizing layer of the photodetector, where accumulating charge at the CML reduces the energy difference between the cathode and the CML to promote injection of electrons that result in gain for an electron only device. Other embodiments of the invention are directed to inclusion of the IR photodctectors with gain into an IR-to-visible up-conversion device that can be used in night vision and other applications.
Abstract:
Embodiments of the invention pertain to a method and apparatus for sensing infrared (IR) radiation. In a specific embodiment, a night vision device can be fabricated by depositing a few layers of organic thin films. Embodiments of the subject device can operate at voltages in the range of 10-15 Volts and have lower manufacturing costs compared to conventional night vision devices. Embodiments of the device can incorporate an organic phototransistor in series with an organic light emitting device. In a specific embodiment, all electrodes are transparent to infrared light. An IR sensing layer can be incorporated with an OLED to provide IR-to-visible color up-conversion. Improved dark current characteristics can be achieved by incorporating a poor hole transport layer material as part of the IR sensing layer.
Abstract:
Embodiments of the subject invention relate to a method and apparatus for infrared (IR) detection. Organic layers can be utilized to produce a phototransistor for the detection of IR radiation. The wavelength range of the IR detector can be modified by incorporating materials sensitive to photons of different wavelengths. Quantum dots of materials sensitive to photons of different wavelengths than the host organic material of the absorbing layer of the phototransistor can be incorporated into the absorbing layer so as to enhance the absorption of photons having wavelengths associated with the material of the quantum dots. A photoconductor structure can be used instead of a phototransistor. The photoconductor can incorporate PbSe or PbS quantum dots. The photoconductor can incorporate organic materials and part of an OLED structure. A detected IR image can be displayed to a user. Organic materials can be used to create an organic light-emitting device.
Abstract:
A white light generating device has at least four pixels where each pixel is a different colored light emitting device (LED) such that the combination of the pixels produces a white light of a desired color temperature upon demand. The LEDs can be organic light emitting devices (OLEDs) or inorganic LEDs. The LEDs can have a microcavity structure for enhanced light output and additionally permitting a broader range of color temperatures than can generally be achieved without the microcavity structure. The color temperature provided by the white light generating device can be changed to achieve different effects. By having at least four colors, more natural aesthetics of illuminated surfaces is achieved, as the reflected light from non-white surfaces is similar to that of reflected natural light.
Abstract:
Imaging devices include an IR up-conversion device on a CMOS imaging sensor (CIS) where the up-conversion device comprises a transparent multilayer stack. The multilayer stack includes an IR sensitizing layer and a light emitting layer situated between a transparent anode and a transparent cathode. In embodiments of the invention, the multilayer stack is formed on a transparent support that is coupled to the CIS by a mechanical fastener or an adhesive or by lamination. In another embodiment of the invention, the CIS functions as a supporting substrate for formation of the multilayer stack.