Abstract:
A method of making microstructures having re-entrant or doubly re-entrant topology includes forming a mold defining the negative surface features of the re-entrant or doubly re-entrant topology that is to be formed. In one embodiment, a soft or flowable material is formed on a first substrate and the mold is contacted with the same to form a solid, now positive surface having the re-entrant or doubly re-entrant topology. The mold is then released from the first substrate. The microstructures are secured to a second, different substrate, and the first substrate is removed. Any residual microstructure material located between adjacent microstructures may be removed to form the separate microstructures on the second substrate. The second substrate may be thin and flexible any manipulated into useful or desired shapes having the microstructures on one side thereof.
Abstract:
In a method of forming a nanopore in a nanometric material, a nanopore nucleation site is formed at a location that is interior to lateral edges of the nanometric material by directing a first energetic beam, selected from the group of ion beam and neutral atom beam, at the interior location for a first time duration that imposes a first beam dose which causes removal of no more than five interior atoms from the interior location to produce at the interior location a nanopore nucleation site having a plurality of edge atoms. A nanopore is then formed at the nanopore nucleation site by directing a second energetic beam, selected from the group consisting of electron beam, ion beam, and neutral atom beam, at the nanopore nucleation site with a beam energy that removes edge atoms at the nanopore nucleation site but does not remove bulk atoms from the nanometric material.
Abstract:
Disclosed are methods of lithography using a tip array having a plurality of pens attached to a backing layer, where the tips can comprise a metal, metalloid, and/or semi-conducting material, and the backing layer can comprise an elastomeric polymer. The tip array can be used to perform a lithography process in which the tips are coated with an ink (e.g., a patterning composition) that is deposited onto a substrate upon contact of the tip with the substrate surface. The tips can be easily leveled onto a substrate and the leveling can be monitored optically by a change in light reflection of the backing layer and/or near the vicinity of the tips upon contact of the tip to the substrate surface.
Abstract:
Disclosed are methods of lithography using a tip array having a plurality of pens attached to a backing layer, where the tips can comprise a metal, metalloid, and/or semi-conducting material, and the backing layer can comprise an elastomeric polymer. The tip array can be used to perform a lithography process in which the tips are coated with an ink (e.g., a patterning composition) that is deposited onto a substrate upon contact of the tip with the substrate surface. The tips can be easily leveled onto a substrate and the leveling can be monitored optically by a change in light reflection of the backing layer and/or near the vicinity of the tips upon contact of the tip to the substrate surface.
Abstract:
A method of forming a composition includes adding together a plurality of particle brush systems wherein each of the particle brush systems includes a particle and a polymer brush including a plurality of polymer chains attached to the particle. The plurality of polymer chains of the polymer brush exhibit two chain conformations as the degree of polymerization of the polymer chains increases so that the polymer brush includes a concentrated polymer brush region with stretched polymer chains and a semi-dilute polymer brush region with relaxed chains that is radially outside of the concentrated polymer brush region. The degree of polymerization of the polymer brush is no less than 10% less than a critical degree of polymerization and no more than 20% greater than the critical degree of polymerization. The critical degree of polymerization is defined as the degree of polymerization required to achieve a transition from the concentrated polymer brush region to the semi-dilute polymer brush region.
Abstract:
마스크층을 식각 보호층으로 이용하는 나노 패턴의 형성방법 및 이로부터 제조된 나노 구조물이 제공된다. 일 실시예에 따르면, 기판 상에 나노 응집 입자들을 포함하는 마스크층을 형성한다. 상기 마스크층은 상기 나노 응집 입자들 사이로 상기 기판을 노출하는 개구를 갖는다. 상기 마스크층을 식각 보호층으로 이용하여 상기 개구로부터 노출된 상기 기판의 표면을 선택적으로 식각하여, 상기 기판 상에 나노 패턴을 형성한다.
Abstract:
Novel continuous high speed techniques are provided to fabricate high aspect-ratio microscale structures by using curable liquid materials on a deformable polymeric substrate by a mold-guided pattern formation process with a rigid mold. Methods comprise contacting a patterned surface of a rigid mold with a curable liquid material disposed on a moldable polymeric substrate. The patterned surface has one or more cavities defining at least one microscale feature, so that the curable liquid material flows into the cavity and the major surface is at least partially deformed during the contacting. The liquid is cured to form a cured polymer having the at least one microscale feature over the moldable polymeric substrate.