公开(公告)号：WO2014146117A3

公开(公告)日：2014-12-04

申请号：PCT/US2014031101

申请日：2014-03-18

Applicant: MODUMETAL INC

Inventor： LOMASNEY CHRISTINA A

IPC: C25D5/14

CPC classification number: C25D17/06 ,  B82Y40/00 ,  C23C18/1653 ,  C23C18/1689 ,  C25D3/04 ,  C25D3/12 ,  C25D3/20 ,  C25D3/22 ,  C25D3/30 ,  C25D3/34 ,  C25D3/38 ,  C25D3/42 ,  C25D3/44 ,  C25D3/46 ,  C25D3/48 ,  C25D3/54 ,  C25D3/56 ,  C25D5/08 ,  C25D5/10 ,  C25D5/12 ,  C25D5/18 ,  C25D5/20 ,  C25D7/04 ,  C25D7/0607 ,  C25D7/0614 ,  C25D17/00 ,  C25D17/007 ,  C25D21/10 ,  C25D21/12

Abstract: Described herein are apparatus and methods for the continuous application of nanolaminated materials by electrodeposition. Nanolaminate materials have become widely studied over the past several decades. As a result some desirable advanced performance characteristics of those materials have been discovered and their potential application in numerous fields recognized. While the potential application of nanolaminated materials in numerous areas, including civil infrastructure, automotive, aerospace, electronics, and other areas has been recognized, the materials are on the whole not available in substantial quantities due to the lack of a continuous process for their production.

Abstract translation: 本文描述了通过电沉积连续施用纳米材料的装置和方法。 纳米材料在过去几十年中已经得到广泛的研究。 因此，已经发现了这些材料的一些期望的高级性能特征，并且它们在许多领域中的潜在应用被认可。 尽管纳米材料在包括民用基础设施，汽车，航空航天，电子等领域在内的许多领域的潜在应用得到了认可，但由于缺乏连续的生产工艺，这些材料总体上无法大量使用 。

公开(公告)号：WO0040779A8

公开(公告)日：2001-02-22

申请号：PCT/US9915850

申请日：1999-07-12

Applicant: SEMITOOL INC ,  BATZ ROBERT W ,  CONRADY SCOT ,  RITZDORF THOMAS L

Inventor： BATZ ROBERT W ,  CONRADY SCOT ,  RITZDORF THOMAS L

IPC: C25D7/12 ,  C25B9/00 ,  C25B11/04 ,  C25D17/00 ,  H01B1/06

CPC classification number: C25D3/30 ,  C25D3/34 ,  C25D7/123 ,  C25D17/001

Abstract: The invention is directed to an electroplating apparatus for selectively depositing tin/lead solder bumps at a high deposition rate. The apparatus comprises a reactor bowl (35) containing an electroplating solution having free ions of tin and lead for plating onto a workpiece (25). A chemical delivery system is used to deliver the electroplating solution to the reactor bowl at a high flow rate. A workpiece support includes a contact assembly (85) for providing electroplating power to a surface at a side of the workpiece that is to be plated. The assembly contacts the workpiece at a large plurality of discrete flexure contacts (90) that are isolated from exposure to the electroplating solution. An anode (55) is spaced from the workpiece support within the reactor assembly (20) and is in contact with the electroplating solution. The electroplating solution comprises a concentration of a lead compound, a concentration of a tin compound, water and methane sulfonic acid.

Abstract translation: 本发明涉及一种用于以高沉积速率选择性地沉积锡/铅焊料凸块的电镀设备。 该装置包括反应器碗（35），其包含具有游离离子的锡和用于电镀到工件（25）上的铅的电镀溶液。 化学输送系统用于以高流速将电镀溶液输送到反应釜。 工件支撑件包括用于向要被电镀的工件的一侧的表面提供电镀功率的接触组件（85）。 组件在与暴露于电镀溶液中分离的大量多个离散挠曲接触件（90）处接触工件。 阳极（55）与反应器组件（20）内的工件支撑件间隔开并与电镀溶液接触。 电镀溶液包含铅化合物的浓度，锡化合物的浓度，水和甲烷磺酸。

公开(公告)号：WO2016094966A1

公开(公告)日：2016-06-23

申请号：PCT/AU2015/050824

申请日：2015-12-21

Applicant: COMMONWEALTH SCIENTIFIC AND INDUSTRIAL RESEARCH ORGANISATION

Inventor： JONES, Timothy, William ,  WILSON, Gregory, Joseph ,  ANDERSON, Kenrick, Forrest ,  HOLLENKAMP, Anthony, Frank ,  DUFFY, Noel, William ,  FIRET, Nienke, Joan

IPC: H01L31/0392 ,  H01L31/0216 ,  H01L31/18 ,  H01L31/0236 ,  H01L31/04

CPC classification number: H01G9/2059 ,  C23C14/14 ,  C23C14/34 ,  C23C14/5846 ,  C23C18/1216 ,  C23C18/1689 ,  C23C18/1694 ,  C23C18/31 ,  C23C24/04 ,  C25D3/30 ,  C25D3/34 ,  C25D3/54 ,  C25D5/48 ,  C25D13/02 ,  H01L31/0324 ,  H01L31/0392 ,  H01L51/0002 ,  H01L51/0032 ,  H01L51/4226 ,  H01L51/447 ,  Y02E10/549

Abstract: A process of forming a thin film photoactive layer of an optoelectronic device comprising: providing a substrate having a surface comprising or coated with a metal M selected from at least one of Pb, Sn, Ge, Si, Ti, Bi, or In; and converting the metal surface or metal coating of the substrate to a perovskite layer.

Abstract translation: 一种形成光电子器件的薄膜光活性层的方法，包括：提供具有包含或涂覆有选自Pb，Sn，Ge，Si，Ti，Bi或In中的至少一种的金属M的表面的衬底; 并将基材的金属表面或金属涂层转化为钙钛矿层。

公开(公告)号：WO2014016544A3

公开(公告)日：2014-05-01

申请号：PCT/GB2013000322

申请日：2013-07-24

Applicant: UNIV SOUTHAMPTON

Inventor： REID GILLIAN ,  BARTLETT PHILIP NIGEL ,  HECTOR ANDREW LEE

IPC: C25D5/02 ,  C25D9/04 ,  H01L21/20

CPC classification number: C25D7/12 ,  C25D3/02 ,  C25D3/26 ,  C25D3/30 ,  C25D3/32 ,  C25D3/34 ,  C25D3/36 ,  C25D3/44 ,  C25D3/54 ,  C25D3/56 ,  C25D3/60 ,  C25D5/02 ,  C25D5/18 ,  C25D9/08 ,  H01L21/02381 ,  H01L21/02491 ,  H01L21/02549 ,  H01L21/02628 ,  H01L45/06 ,  H01L45/1253 ,  H01L45/144 ,  H01L45/1608 ,  H01L45/1683

Abstract: A process for the electrochemical deposition of a semiconductor material, which process comprises: (i) providing a non-aqueous solvent; (ii) providing at least one precursor salt which forms a source of the constituent elements within the semiconductor material to be deposited; and (iii) electrodepositing the semiconductor material onto an electrode substrate using the precursor salt in the non-aqueous solvent, characterised in that: (iv) the semiconductor material is a p-block or a post-transition metal semiconductor material containing at least one p-block element or post-transition metal; and (v) the non-aqueous solvent is a halocarbon non-aqueous solvent.

Abstract translation: 一种用于电化学沉积半导体材料的方法，该方法包括：（i）提供非水溶剂; （ii）提供至少一种前体盐，其形成待沉积的半导体材料内的构成元素的来源; 和（iii）使用所述非水溶剂中的所述前体盐将所述半导体材料电沉积到电极衬底上，其特征在于：（iv）所述半导体材料是p型块或后过渡金属半导体材料，其包含至少一种 p型块元件或后过渡金属; 和（v）非水溶剂是卤代烃非水溶剂。

公开(公告)号：WO00040779A1

公开(公告)日：2000-07-13

申请号：PCT/US1999/015850

申请日：1999-07-12

IPC: C25D7/12 ,  C25B9/00 ,  C25B11/04 ,  C25D17/00 ,  H01B1/06

CPC classification number: C25D3/30 ,  C25D3/34 ,  C25D7/123 ,  C25D17/001

Abstract: The invention is directed to an electroplating apparatus for selectively depositing tin/lead solder bumps at a high deposition rate. The apparatus comprises a reactor bowl (35) containing an electroplating solution having free ions of tin and lead for plating onto a workpiece (25). A chemical delivery system is used to deliver the electroplating solution to the reactor bowl at a high flow rate. A workpiece support includes a contact assembly (85) for providing electroplating power to a surface at a side of the workpiece that is to be plated. The assembly contacts the workpiece at a large plurality of discrete flexure contacts (90) that are isolated from exposure to the electroplating solution. An anode (55) is spaced from the workpiece support within the reactor assembly (20) and is in contact with the electroplating solution. The electroplating solution comprises a concentration of a lead compound, a concentration of a tin compound, water and methane sulfonic acid.

Abstract translation: 本发明涉及一种用于以高沉积速率选择性地沉积锡/铅焊料凸块的电镀设备。 该装置包括反应器碗（35），其包含具有游离离子的锡和用于电镀到工件（25）上的铅的电镀溶液。 化学输送系统用于以高流速将电镀溶液输送到反应釜。 工件支撑件包括用于向要被电镀的工件的一侧的表面提供电镀功率的接触组件（85）。 组件在与暴露于电镀溶液中分离的大量多个离散挠曲接触件（90）处接触工件。 阳极（55）与反应器组件（20）内的工件支撑件间隔开并与电镀溶液接触。 电镀溶液包含铅化合物的浓度，锡化合物的浓度，水和甲烷磺酸。

公开(公告)号：WO2017195191A1

公开(公告)日：2017-11-16

申请号：PCT/IL2017/050503

申请日：2017-05-08

Applicant: YEDA RESEARCH AND DEVELOPMENT CO. LTD.

Inventor： CAHE, David ,  HODES, Gary ,  RAKITA, Yevgeny ,  KEDEM, Nir

IPC: C23C22/02 ,  C23C8/08 ,  H01L31/0392 ,  H01L31/04 ,  C07F7/00 ,  C25D3/30 ,  C25D3/34 ,  C23C14/16 ,  C23C14/34 ,  C30B25/00 ,  C30B29/12 ,  C23C18/31

CPC classification number: C07F7/24 ,  C01G21/16 ,  C01P2002/34 ,  C07F7/2284 ,  C07F7/2288 ,  C23C8/40 ,  C23C18/1689 ,  C23C18/31 ,  C25D3/30 ,  C25D3/34 ,  C25D5/48 ,  C30B7/14 ,  C30B25/00 ,  C30B29/12 ,  H01L51/0032 ,  H01L51/005 ,  H01L51/4226 ,  H01L2251/301 ,  Y02E10/549

Abstract: This invention is related to a method for the preparation of halide perovskite or perovskite-related materials on a substrate and to optoelectronic devices and photovoltaic cells comprising the perovskites prepared by the methods of this invention The method for the preparation of the perovskite includes a direct conversion of elemental metal or metal alloy to halide perovskite or perovskite-related materials.

Abstract translation: 本发明涉及在基底上制备卤化物钙钛矿或钙钛矿相关材料的方法，并涉及包含通过本发明方法制备的钙钛矿的光电子器件和光电池。用于 钙钛矿的制备包括将元素金属或金属合金直接转化为卤化物钙钛矿或钙钛矿相关材料。

公开(公告)号：WO2014146117A2

公开(公告)日：2014-09-18

申请号：PCT/US2014/031101

申请日：2014-03-18

Applicant: MODUMETAL, INC.

Inventor： LOMASNEY, Christina A.

IPC: C25D5/14

CPC classification number: C25D17/06 ,  B82Y40/00 ,  C23C18/1653 ,  C23C18/1689 ,  C25D3/04 ,  C25D3/12 ,  C25D3/20 ,  C25D3/22 ,  C25D3/30 ,  C25D3/34 ,  C25D3/38 ,  C25D3/42 ,  C25D3/44 ,  C25D3/46 ,  C25D3/48 ,  C25D3/54 ,  C25D3/56 ,  C25D5/08 ,  C25D5/10 ,  C25D5/12 ,  C25D5/18 ,  C25D5/20 ,  C25D7/04 ,  C25D7/0607 ,  C25D7/0614 ,  C25D17/00 ,  C25D17/007 ,  C25D21/10 ,  C25D21/12

Abstract: Described herein are apparatus and methods for the continuous application of nanolaminated materials by electrodeposition.

Abstract translation: 本文描述了通过电沉积连续施用纳米材料的装置和方法。

公开(公告)号：WO2014016544A2

公开(公告)日：2014-01-30

申请号：PCT/GB2013/000322

申请日：2013-07-24

Applicant: UNIVERSITY OF SOUTHAMPTON

Inventor： REID, Gillian ,  BARTLETT, Philip Nigel ,  HECTOR, Andrew Lee

IPC: C25D5/02

CPC classification number: C25D7/12 ,  C25D3/02 ,  C25D3/26 ,  C25D3/30 ,  C25D3/32 ,  C25D3/34 ,  C25D3/36 ,  C25D3/44 ,  C25D3/54 ,  C25D3/56 ,  C25D3/60 ,  C25D5/02 ,  C25D5/18 ,  C25D9/08 ,  H01L21/02381 ,  H01L21/02491 ,  H01L21/02549 ,  H01L21/02628 ,  H01L45/06 ,  H01L45/1253 ,  H01L45/144 ,  H01L45/1608 ,  H01L45/1683

Abstract: A process for the electrochemical deposition of a semiconductor material, which process comprises: (i) providing a non-aqueous solvent; (ii) providing at least one precursor salt which forms a source of the constituent elements within the semiconductor material to be deposited; and (iii) electrodepositing the semiconductor material onto an electrode substrate using the precursor salt in the non-aqueous solvent, characterised in that: (iv) the semiconductor material is a p-block or a post-transition metal semiconductor material containing at least one p-block element or post-transition metal; and (v) the non-aqueous solvent is a halocarbon non-aqueous solvent.

Abstract translation: 一种用于半导体材料的电化学沉积的方法，该方法包括：（i）提供非水溶剂; （ii）提供至少一种在要沉积的半导体材料内形成组成元素源的前体盐; 以及（iii）使用所述前体盐在所述非水溶剂中将所述半导体材料电沉积到电极基板上，其特征在于：（iv）所述半导体材料是含有至少一个的p块或后过渡金属半导体材料 p块元素或过渡后金属; 和（v）非水溶剂是卤代烃非水溶剂。